JP4252098B2 - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
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- JP4252098B2 JP4252098B2 JP2007184217A JP2007184217A JP4252098B2 JP 4252098 B2 JP4252098 B2 JP 4252098B2 JP 2007184217 A JP2007184217 A JP 2007184217A JP 2007184217 A JP2007184217 A JP 2007184217A JP 4252098 B2 JP4252098 B2 JP 4252098B2
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Images
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
- H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
- H01L27/14656—Overflow drain structures
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
CMOSイメージセンサを採用するメリットとしては、一般のチップと同じ製造ラインが使え、周辺機能と合わせたワンチップ化も可能である点、CCDよりも低電圧で駆動可能であって、消費電力がCCDに比べて低い点が挙げられる。
図1は、本実施形態に係る光検出装置全体の構成を示す回路図である。光検出装置300は、m行n列(m、nは2以上の整数)の2次元に配置された複数の画素回路(以下単に、画素ともいう)PIXを備える撮像領域200と、行ごとに設けられた走査線LSと総称されるm本の走査線LS1〜LSmと、データ線LDと総称される、列ごとに設けられたn本のデータ線LD1〜LDnと、走査制御部20と、信号処理部30と、を備える。
図7は、ベイヤー配列で生成された撮像領域200を示す図である。ベイヤー配列の最小単位は4画素で構成される。対角に緑Gのカラーフィルタを持つ画素が配置され、残りの画素に赤Rおよび青Bのカラーフィルタを持つ画素がそれぞれ配置される。本実施形態では、ベイヤー配列の最小単位を構成する上の行2画素と、下の行2画素との間に、オーバーフロードレインキャパシタCovを形成する領域(以下、OFD領域と表記する。)が設けられる。
図11は、変形例2に係る画素回路の構成を示す回路図である。変形例2に係る画素回路は、変形例1に係る画素回路のPチャンネルMOSFETを採用した電流制御トランジスタM11の代わりに、NチャンネルMOSFETを採用した電流制御トランジスタM12を使用する。電流制御トランジスタM12のドレイン端子には電源電圧Vddが印加され、そのソース端子にはオーバーフロードレインキャパシタCovの一端が接続される。電流制御トランジスタM12は、ゲート端子とドレイン端子がダイオード接続される。
図12は、変形例3に係る画素回路の構成を示す回路図である。変形例1、2では、ダイオード接続されたMOSFETの特性を利用して蓄積電荷量を調整するための電流を流したが、変形例3では、MOSFETのゲート端子に印加するゲート電圧を制御することにより、電流を流すタイミングおよび値を設計者が任意に設定することができる。
第1画素回路100aの出力電圧=(Iph1−Ict1)Δt/(Cpd1+Cov) …(式1)
ダミー画素回路110の出力電圧=−Ict2/Cd*1/N≒−Ict1/(Cpd1+Cov)*1/N …(式2)
補正後電圧=(Iph1−Ict1)/(Cpd1+Cov)−{−Ict1/(Cpd1+Cov)*1/N}*N=Iph1/(Cpd1+Cov) …(式3)
ここで、Iph1はフォトダイオードPD1に流れる光電流、Ict1は電流制御トランジスタM13が流す電流、Δtは蓄積時間、Ict2はダミートランジスタM14が流す電流、Cpd1はカソード容量Cpd1の容量値、CovはオーバーフローキャパシタCovの容量値、CdはダミーキャパシタCdの容量値、NはダミーキャパシタCdの面積や蓄積時間を調整した値を示す。上述したようにダミーキャパシタCdの面積を10倍にした場合、ダミー画素回路110の出力電圧を10倍にして調整する必要がある。
図15は、変形例4に係る画素回路の構成を示す回路図である。図2に示した基本構成、および変形例1〜3に示した構成は、アクティブピクセルセンサ(APS)方式の画素回路である。変形例4では、APS方式に加え、パッシブピクセルセンサ(PPS)方式にも対応した画素回路を説明する。なお、図15は変形例3に係る画素回路にPPS方式を実現するための構成要素を加えたが、図2に示した画素回路、変形例1、2に係る画素回路にも同様に適用可能である。
Claims (1)
- 入射光に対応する光電流を発生させる光検出素子をそれぞれ備えた複数の画素回路と、
前記光検出素子に備わる第1容量から溢れた電荷を充放電する第2容量と、を備え、
前記第2容量の数は、前記複数の画素回路の数より少なく、
前記複数の画素回路には、前記光検出素子が前記第2容量に接続された画素回路と、前記光検出素子が前記第2容量に接続されない画素回路が混在していることを特徴とする光検出装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007184217A JP4252098B2 (ja) | 2006-09-20 | 2007-07-13 | 光検出装置 |
US11/858,583 US20080067325A1 (en) | 2006-09-20 | 2007-09-20 | Photo detecting apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006255073 | 2006-09-20 | ||
JP2007184217A JP4252098B2 (ja) | 2006-09-20 | 2007-07-13 | 光検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008104150A JP2008104150A (ja) | 2008-05-01 |
JP4252098B2 true JP4252098B2 (ja) | 2009-04-08 |
Family
ID=39187559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007184217A Expired - Fee Related JP4252098B2 (ja) | 2006-09-20 | 2007-07-13 | 光検出装置 |
Country Status (2)
Country | Link |
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US (1) | US20080067325A1 (ja) |
JP (1) | JP4252098B2 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8546765B2 (en) * | 2008-06-26 | 2013-10-01 | Trixell | High dynamic range X-ray detector with improved signal to noise ratio |
JP5442571B2 (ja) * | 2010-09-27 | 2014-03-12 | パナソニック株式会社 | 固体撮像装置及び撮像装置 |
US8710541B2 (en) | 2012-03-20 | 2014-04-29 | Analog Devices, Inc. | Bi-directional switch using series connected N-type MOS devices in parallel with series connected P-type MOS devices |
JP2014150231A (ja) * | 2013-02-04 | 2014-08-21 | Toshiba Corp | 固体撮像装置および同装置の製造方法 |
US9647150B2 (en) * | 2013-05-21 | 2017-05-09 | Jorge Vicente Blasco Claret | Monolithic integration of plenoptic lenses on photosensor substrates |
US20150103973A1 (en) * | 2013-10-11 | 2015-04-16 | General Electric Company | X-ray system with multiple dynamic range selections |
KR102211899B1 (ko) * | 2013-11-18 | 2021-02-03 | 가부시키가이샤 니콘 | 고체 촬상 소자 및 촬상 장치 |
US9741755B2 (en) | 2014-12-22 | 2017-08-22 | Google Inc. | Physical layout and structure of RGBZ pixel cell unit for RGBZ image sensor |
CN105744183B (zh) * | 2014-12-26 | 2020-08-11 | 松下知识产权经营株式会社 | 摄像装置 |
JP6555609B2 (ja) * | 2015-04-24 | 2019-08-07 | Tianma Japan株式会社 | イメージセンサ |
AU2016264606B2 (en) * | 2015-05-19 | 2020-09-03 | Magic Leap, Inc. | Semi-global shutter imager |
JP6663104B2 (ja) * | 2015-09-10 | 2020-03-11 | 富士通株式会社 | 半導体装置および半導体装置の制御方法 |
JPWO2018003012A1 (ja) * | 2016-06-28 | 2019-04-18 | オリンパス株式会社 | 固体撮像装置 |
US10812742B2 (en) * | 2018-04-18 | 2020-10-20 | Facebook Technologies, Llc | Apparatus and method for determining whether a photodiode saturates and outputting a digital value representing a charge from that photodiode based on that determination |
CN113906732A (zh) * | 2019-05-31 | 2022-01-07 | 新唐科技日本株式会社 | 固体摄像装置及使用该固体摄像装置的摄像装置 |
JP2022090951A (ja) * | 2020-12-08 | 2022-06-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、調整方法及び電子機器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6452633B1 (en) * | 1998-02-26 | 2002-09-17 | Foveon, Inc. | Exposure control in electronic cameras by detecting overflow from active pixels |
US20070222879A1 (en) * | 2006-03-24 | 2007-09-27 | Intel Corporation | Sub-ranging pixel sample and hold |
-
2007
- 2007-07-13 JP JP2007184217A patent/JP4252098B2/ja not_active Expired - Fee Related
- 2007-09-20 US US11/858,583 patent/US20080067325A1/en not_active Abandoned
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Publication number | Publication date |
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JP2008104150A (ja) | 2008-05-01 |
US20080067325A1 (en) | 2008-03-20 |
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