KR102534192B1 - 에피택셜 성장 장치를 위한 챔버 컴포넌트들 - Google Patents

에피택셜 성장 장치를 위한 챔버 컴포넌트들 Download PDF

Info

Publication number
KR102534192B1
KR102534192B1 KR1020160035532A KR20160035532A KR102534192B1 KR 102534192 B1 KR102534192 B1 KR 102534192B1 KR 1020160035532 A KR1020160035532 A KR 1020160035532A KR 20160035532 A KR20160035532 A KR 20160035532A KR 102534192 B1 KR102534192 B1 KR 102534192B1
Authority
KR
South Korea
Prior art keywords
susceptor
substrate
epitaxial growth
holes
growth apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020160035532A
Other languages
English (en)
Korean (ko)
Other versions
KR20160115808A (ko
Inventor
신이치 오키
요시노부 모리
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20160115808A publication Critical patent/KR20160115808A/ko
Priority to KR1020230062410A priority Critical patent/KR102715683B1/ko
Application granted granted Critical
Publication of KR102534192B1 publication Critical patent/KR102534192B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H01L21/6835—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
    • F24C15/00—Details
    • F24C15/10—Tops, e.g. hot plates; Rings
    • H01L21/02293—
    • H01L21/67161—
    • H01L21/6719—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Combustion & Propulsion (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020160035532A 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들 Active KR102534192B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020230062410A KR102715683B1 (ko) 2015-03-25 2023-05-15 에피택셜 성장 장치를 위한 챔버 컴포넌트들

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562138365P 2015-03-25 2015-03-25
US62/138,365 2015-03-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020230062410A Division KR102715683B1 (ko) 2015-03-25 2023-05-15 에피택셜 성장 장치를 위한 챔버 컴포넌트들

Publications (2)

Publication Number Publication Date
KR20160115808A KR20160115808A (ko) 2016-10-06
KR102534192B1 true KR102534192B1 (ko) 2023-05-17

Family

ID=56089855

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020160035532A Active KR102534192B1 (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR1020160035514A Active KR102571041B1 (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR2020160001599U Ceased KR20160003445U (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR2020160001598U Ceased KR20160003444U (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR1020230062410A Active KR102715683B1 (ko) 2015-03-25 2023-05-15 에피택셜 성장 장치를 위한 챔버 컴포넌트들

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020160035514A Active KR102571041B1 (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR2020160001599U Ceased KR20160003445U (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR2020160001598U Ceased KR20160003444U (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR1020230062410A Active KR102715683B1 (ko) 2015-03-25 2023-05-15 에피택셜 성장 장치를 위한 챔버 컴포넌트들

Country Status (8)

Country Link
US (3) US10544518B2 (https=)
EP (1) EP3275008B1 (https=)
JP (5) JP6836328B2 (https=)
KR (5) KR102534192B1 (https=)
CN (5) CN106011796B (https=)
SG (4) SG10201602299UA (https=)
TW (5) TWM531050U (https=)
WO (1) WO2016154052A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201608905XA (en) 2014-05-21 2016-12-29 Applied Materials Inc Thermal processing susceptor
WO2016154052A1 (en) * 2015-03-25 2016-09-29 Applied Materials, Inc. Chamber components for epitaxial growth apparatus
CN107641796B (zh) * 2016-07-21 2020-10-02 台湾积体电路制造股份有限公司 制程设备及化学气相沉积制程
JP6631498B2 (ja) 2016-12-26 2020-01-15 株式会社Sumco シリコン材料製造工程の評価方法およびシリコン材料の製造方法
TWI754765B (zh) * 2017-08-25 2022-02-11 美商應用材料股份有限公司 用於磊晶沉積製程之注入組件
US10395969B2 (en) * 2017-11-03 2019-08-27 Varian Semiconductor Equipment Associates, Inc. Transparent halo for reduced particle generation
US11424112B2 (en) 2017-11-03 2022-08-23 Varian Semiconductor Equipment Associates, Inc. Transparent halo assembly for reduced particle generation
KR102014928B1 (ko) * 2018-01-18 2019-08-27 에스케이실트론 주식회사 서셉터 및 이를 포함하는 기상 증착 장치
CN110071064A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种改善外延片污染印记的方法
KR102640172B1 (ko) * 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN110345524B (zh) * 2019-08-22 2024-06-11 杭州老板电器股份有限公司 锅架及燃气灶
JP7342719B2 (ja) * 2020-01-28 2023-09-12 住友金属鉱山株式会社 成膜装置
CN115461856B (zh) * 2020-04-29 2026-01-23 应用材料公司 用于均匀性改善的加热器盖板
CN111599716B (zh) * 2020-05-06 2024-06-21 北京北方华创微电子装备有限公司 用于外延生长设备的预热环以及外延生长设备
DE102021115349A1 (de) * 2020-07-14 2022-01-20 Infineon Technologies Ag Substrat-prozesskammer und prozessgasströmungsablenker zur verwendung in der prozesskammer
US12324061B2 (en) 2021-04-06 2025-06-03 Applied Materials, Inc. Epitaxial deposition chamber
CN113279055B (zh) * 2021-04-16 2022-07-22 上海新昇半导体科技有限公司 一种外延基座
KR102864014B1 (ko) * 2021-05-12 2025-09-23 어플라이드 머티어리얼스, 인코포레이티드 낮은 질량의 기판 지지체
JP2025523807A (ja) 2022-11-25 2025-07-25 エルジー エナジー ソリューション リミテッド リチウム－硫黄電池用正極及び高エネルギー密度特性を有するリチウム－硫黄電池
CN115928202A (zh) * 2022-12-12 2023-04-07 西安奕斯伟材料科技有限公司 外延生长装置及设备
US20240254655A1 (en) * 2023-01-26 2024-08-01 Applied Materials, Inc. Epi isolation plate and parallel block purge flow tuning for growth rate and uniformity
TWI897069B (zh) * 2023-10-20 2025-09-11 台亞半導體股份有限公司 頂板及含有頂板之磊晶成長裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003532612A (ja) * 2000-11-29 2003-11-05 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド オートドーピングおよび後面ハローがないエピタキシャルシリコンウエハ
JP2008277795A (ja) * 2001-12-21 2008-11-13 Sumco Corp エピタキシャル成長用サセプタ
JP2014192364A (ja) * 2013-03-27 2014-10-06 Epicrew Inc サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644419C3 (de) * 1976-09-30 1979-05-17 Borsig Gmbh, 1000 Berlin Antriebszapfenabdichtung eines Kugelhahns
ZA777063B (en) * 1976-12-27 1979-07-25 Colgate Palmolive Co Antibacterial oral composition
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
JPH10256163A (ja) * 1997-03-11 1998-09-25 Toshiba Corp 高速回転型枚葉式気相成長装置
US5914050A (en) * 1997-09-22 1999-06-22 Applied Materials, Inc. Purged lower liner
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
JP3273247B2 (ja) * 1998-10-19 2002-04-08 株式会社スーパーシリコン研究所 エピタキシャル成長炉
JP2001313329A (ja) * 2000-04-28 2001-11-09 Applied Materials Inc 半導体製造装置におけるウェハ支持装置
US6444027B1 (en) 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
JP4588894B2 (ja) * 2001-01-31 2010-12-01 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP3801957B2 (ja) * 2001-06-29 2006-07-26 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP4936621B2 (ja) * 2001-09-28 2012-05-23 アプライド マテリアルズ インコーポレイテッド 成膜装置のプロセスチャンバー、成膜装置および成膜方法
JP2003133238A (ja) * 2001-10-26 2003-05-09 Applied Materials Inc 成膜装置のプロセスチャンバー、成膜装置および成膜方法
CN100338734C (zh) * 2001-11-30 2007-09-19 信越半导体株式会社 基座、气相生长装置、外延晶片的制造装置、外延晶片的制造方法和外延晶片
US20050000449A1 (en) 2001-12-21 2005-01-06 Masayuki Ishibashi Susceptor for epitaxial growth and epitaxial growth method
JP4288036B2 (ja) * 2002-02-20 2009-07-01 東京エレクトロン株式会社 ガスシャワーヘッド、成膜装置及び成膜方法
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
WO2004111297A1 (ja) * 2003-06-10 2004-12-23 Tokyo Electron Limited 処理ガス供給機構、成膜装置および成膜方法
JP4379585B2 (ja) * 2003-12-17 2009-12-09 信越半導体株式会社 気相成長装置およびエピタキシャルウェーハの製造方法
KR100889437B1 (ko) * 2004-05-18 2009-03-24 가부시키가이샤 섬코 기상 성장 장치용 서셉터
JP2006128485A (ja) * 2004-10-29 2006-05-18 Asm Japan Kk 半導体処理装置
KR100629358B1 (ko) * 2005-05-24 2006-10-02 삼성전자주식회사 샤워 헤드
KR101208891B1 (ko) 2005-08-17 2012-12-06 주성엔지니어링(주) 대면적 기판 처리장치용 가스분배판
JP2007073892A (ja) 2005-09-09 2007-03-22 Ulvac Japan Ltd 吸着装置、貼り合わせ装置、封着方法
GB2435719A (en) 2006-03-03 2007-09-05 Darrell Lee Mann Gripping device with a multitude of small fibres using van der Waals forces
JP5069424B2 (ja) * 2006-05-31 2012-11-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置及び同方法
JP2007324285A (ja) * 2006-05-31 2007-12-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置
TW200809926A (en) * 2006-05-31 2008-02-16 Sumco Techxiv Corp Apparatus and method for depositing layer on substrate
TWM305960U (en) 2006-06-21 2007-02-01 Calitech Co Ltd Gas distribution plate for wafer process chamber
US8852349B2 (en) * 2006-09-15 2014-10-07 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects
US8951351B2 (en) * 2006-09-15 2015-02-10 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects
JP2008235830A (ja) * 2007-03-23 2008-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 気相成長装置
DE112008003535T5 (de) * 2007-12-28 2010-12-09 Shin-Etsu Handotai Co., Ltd. Suszeptor für das epitaxiale Wachstum
JP5268766B2 (ja) * 2009-04-23 2013-08-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置及び成膜基板製造方法
CN102498557A (zh) * 2009-08-05 2012-06-13 应用材料公司 化学气相沉积设备
JP5604907B2 (ja) * 2010-02-25 2014-10-15 信越半導体株式会社 気相成長用半導体基板支持サセプタおよびエピタキシャルウェーハ製造装置およびエピタキシャルウェーハの製造方法
CN103430285B (zh) 2011-03-22 2016-06-01 应用材料公司 用于化学气相沉积腔室的衬里组件
JP5445508B2 (ja) * 2011-04-22 2014-03-19 信越半導体株式会社 偏心量の評価方法及びエピタキシャルウェーハの製造方法
US11085112B2 (en) * 2011-10-28 2021-08-10 Asm Ip Holding B.V. Susceptor with ring to limit backside deposition
KR101339591B1 (ko) * 2012-01-13 2013-12-10 주식회사 엘지실트론 서셉터
TW201347035A (zh) 2012-02-02 2013-11-16 Greene Tweed Of Delaware 用於具有延長生命週期的電漿反應器的氣體分散板
JP5343162B1 (ja) 2012-10-26 2013-11-13 エピクルー株式会社 エピタキシャル成長装置
USD693782S1 (en) * 2012-11-19 2013-11-19 Epicrew Corporation Lid for epitaxial growing device
US10344380B2 (en) * 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
JP5602903B2 (ja) * 2013-03-14 2014-10-08 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
US20140273503A1 (en) * 2013-03-14 2014-09-18 Memc Electronic Materials, Inc. Methods of gas distribution in a chemical vapor deposition system
JP5999511B2 (ja) * 2013-08-26 2016-09-28 信越半導体株式会社 気相エピタキシャル成長装置及びそれを用いたエピタキシャルウェーハの製造方法
KR101487411B1 (ko) * 2013-09-02 2015-01-29 주식회사 엘지실트론 라이너 및 이를 포함하는 에피텍셜 반응기
JP6198584B2 (ja) * 2013-11-21 2017-09-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
WO2016154052A1 (en) * 2015-03-25 2016-09-29 Applied Materials, Inc. Chamber components for epitaxial growth apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003532612A (ja) * 2000-11-29 2003-11-05 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド オートドーピングおよび後面ハローがないエピタキシャルシリコンウエハ
JP2008277795A (ja) * 2001-12-21 2008-11-13 Sumco Corp エピタキシャル成長用サセプタ
JP2014192364A (ja) * 2013-03-27 2014-10-06 Epicrew Inc サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置

Also Published As

Publication number Publication date
SG10201908873WA (en) 2019-11-28
SG10201602299UA (en) 2016-10-28
TWI733663B (zh) 2021-07-21
CN106011795B (zh) 2020-09-04
JP2021082831A (ja) 2021-05-27
US20160281261A1 (en) 2016-09-29
SG10201908874UA (en) 2019-11-28
TW201700774A (zh) 2017-01-01
US10544518B2 (en) 2020-01-28
JP7136945B2 (ja) 2022-09-13
JP6836328B2 (ja) 2021-02-24
US20160281262A1 (en) 2016-09-29
CN205741209U (zh) 2016-11-30
TWM535866U (zh) 2017-01-21
EP3275008A1 (en) 2018-01-31
EP3275008B1 (en) 2022-02-23
KR20160003444U (ko) 2016-10-06
WO2016154052A1 (en) 2016-09-29
TWI686502B (zh) 2020-03-01
KR102571041B1 (ko) 2023-08-24
JP3204579U (ja) 2016-06-02
TWI685586B (zh) 2020-02-21
CN205856605U (zh) 2017-01-04
EP3275008A4 (en) 2018-11-21
JP2016184734A (ja) 2016-10-20
CN112063997A (zh) 2020-12-11
CN106011795A (zh) 2016-10-12
CN106011796B (zh) 2019-12-10
US11441236B2 (en) 2022-09-13
KR20230073163A (ko) 2023-05-25
TWM531050U (zh) 2016-10-21
TW201635340A (zh) 2016-10-01
KR20160115806A (ko) 2016-10-06
KR102715683B1 (ko) 2024-10-11
JP2016184733A (ja) 2016-10-20
US20160281263A1 (en) 2016-09-29
JP3204580U (ja) 2016-06-02
KR20160003445U (ko) 2016-10-06
SG10201602295QA (en) 2016-10-28
KR20160115808A (ko) 2016-10-06
CN106011796A (zh) 2016-10-12
JP6862095B2 (ja) 2021-04-21
TW201700775A (zh) 2017-01-01

Similar Documents

Publication Publication Date Title
KR102715683B1 (ko) 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR102586986B1 (ko) 에피택셜 성장 및 에피택셜 성장 장치를 사용하는 필름 형성 방법
CN108728823B (zh) 外延生长装置
JP7209675B2 (ja) エピタキシャル成長による成膜方法、および、エピタキシャル成長装置

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
GRNT Written decision to grant
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000