KR102510589B1 - 반도체 장치 및 이의 제조 방법 - Google Patents

반도체 장치 및 이의 제조 방법 Download PDF

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KR102510589B1
KR102510589B1 KR1020177015043A KR20177015043A KR102510589B1 KR 102510589 B1 KR102510589 B1 KR 102510589B1 KR 1020177015043 A KR1020177015043 A KR 1020177015043A KR 20177015043 A KR20177015043 A KR 20177015043A KR 102510589 B1 KR102510589 B1 KR 102510589B1
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electrode
semiconductor device
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KR20170108939A (ko
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아키라 후카자와
스미토 오우치
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에어 워터 가부시키가이샤
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    • H10D62/82—Heterojunctions
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    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
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    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
KR1020177015043A 2014-11-04 2015-08-12 반도체 장치 및 이의 제조 방법 Active KR102510589B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-224076 2014-11-04
JP2014224076A JP6266490B2 (ja) 2014-11-04 2014-11-04 半導体装置およびその製造方法
PCT/JP2015/072863 WO2016072122A1 (ja) 2014-11-04 2015-08-12 半導体装置およびその製造方法

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KR20170108939A KR20170108939A (ko) 2017-09-27
KR102510589B1 true KR102510589B1 (ko) 2023-03-17

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US (1) US10186585B2 (https=)
EP (1) EP3217436B8 (https=)
JP (1) JP6266490B2 (https=)
KR (1) KR102510589B1 (https=)
CN (1) CN107004724B (https=)
TW (1) TWI688106B (https=)
WO (1) WO2016072122A1 (https=)

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JP6925117B2 (ja) * 2016-11-18 2021-08-25 エア・ウォーター株式会社 化合物半導体基板の製造方法および化合物半導体基板
WO2018177552A1 (en) * 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride
US11521964B2 (en) * 2018-06-29 2022-12-06 Intel Corporation Schottky diode structures and integration with III-V transistors
EP3823034A1 (en) * 2019-11-12 2021-05-19 Infineon Technologies AG High voltage semiconductor device with step topography passivation layer stack
JP7619349B2 (ja) 2022-09-16 2025-01-22 信越半導体株式会社 窒化物半導体層付き単結晶シリコン基板及び窒化物半導体層付き単結晶シリコン基板の製造方法

Citations (4)

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JP2007036010A (ja) * 2005-07-28 2007-02-08 Toshiba Corp ショットキーバリアダイオード装置及びその製造方法
JP2009081269A (ja) * 2007-09-26 2009-04-16 Nippon Telegr & Teleph Corp <Ntt> 縦型窒化物半導体デバイス及びその製造方法
JP2013179121A (ja) 2012-02-28 2013-09-09 Air Water Inc 半導体基板の製造方法および半導体基板
JP2014076925A (ja) * 2012-10-12 2014-05-01 Air Water Inc 半導体基板の製造方法および半導体基板

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JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JP3606015B2 (ja) * 1997-07-23 2005-01-05 豊田合成株式会社 ３族窒化物半導体素子の製造方法
JP2002208729A (ja) * 2001-01-11 2002-07-26 Sanken Electric Co Ltd 発光素子及びその製造方法
JP4058595B2 (ja) 2001-08-20 2008-03-12 サンケン電気株式会社 半導体発光素子及びその製造方法
US7368757B2 (en) * 2004-12-24 2008-05-06 Covalent Materials Corporation Compound semiconductor and compound semiconductor device using the same
JP4542912B2 (ja) * 2005-02-02 2010-09-15 株式会社東芝 窒素化合物半導体素子
JP2007087992A (ja) * 2005-09-20 2007-04-05 Showa Denko Kk 半導体素子および半導体素子製造方法
JP4929882B2 (ja) * 2006-07-11 2012-05-09 富士電機株式会社 半導体装置
US7834367B2 (en) * 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US20080224268A1 (en) * 2007-03-13 2008-09-18 Covalent Materials Corporation Nitride semiconductor single crystal substrate
KR20120032258A (ko) * 2010-09-28 2012-04-05 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
CN102651309B (zh) * 2012-04-09 2014-08-20 中国电子科技集团公司第五十五研究所 低成本宽禁带单晶薄膜的结构及制备方法
CN104704608B (zh) * 2012-09-13 2017-03-22 松下知识产权经营株式会社 氮化物半导体结构物

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Publication number Priority date Publication date Assignee Title
JP2007036010A (ja) * 2005-07-28 2007-02-08 Toshiba Corp ショットキーバリアダイオード装置及びその製造方法
JP2009081269A (ja) * 2007-09-26 2009-04-16 Nippon Telegr & Teleph Corp <Ntt> 縦型窒化物半導体デバイス及びその製造方法
JP2013179121A (ja) 2012-02-28 2013-09-09 Air Water Inc 半導体基板の製造方法および半導体基板
JP2014076925A (ja) * 2012-10-12 2014-05-01 Air Water Inc 半導体基板の製造方法および半導体基板

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JP2016092169A (ja) 2016-05-23
WO2016072122A1 (ja) 2016-05-12
TWI688106B (zh) 2020-03-11
TW201630198A (zh) 2016-08-16
EP3217436A4 (en) 2018-06-20
KR20170108939A (ko) 2017-09-27
US10186585B2 (en) 2019-01-22
US20170236907A1 (en) 2017-08-17
CN107004724A (zh) 2017-08-01
EP3217436A1 (en) 2017-09-13
CN107004724B (zh) 2020-10-30
EP3217436B8 (en) 2021-03-10
EP3217436B1 (en) 2020-12-30
JP6266490B2 (ja) 2018-01-24

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