KR102503871B1 - 촬상 소자 및 촬상 장치 - Google Patents

촬상 소자 및 촬상 장치 Download PDF

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KR102503871B1
KR102503871B1 KR1020227004827A KR20227004827A KR102503871B1 KR 102503871 B1 KR102503871 B1 KR 102503871B1 KR 1020227004827 A KR1020227004827 A KR 1020227004827A KR 20227004827 A KR20227004827 A KR 20227004827A KR 102503871 B1 KR102503871 B1 KR 102503871B1
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potential
pixel
transistor
imaging device
unit
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KR20220025915A (ko
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요스케 우에노
유스케 이케다
시즈노리 마츠모토
츠토무 하루타
레이 요시카와
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소니그룹주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H01L27/14612—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H01L27/14634—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020227004827A 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치 Active KR102503871B1 (ko)

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Application Number Priority Date Filing Date Title
KR1020237005817A KR102551950B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014034369A JP6094511B2 (ja) 2014-02-25 2014-02-25 撮像素子および撮像装置
JPJP-P-2014-034369 2014-02-25
PCT/JP2015/000720 WO2015129197A1 (en) 2014-02-25 2015-02-17 Imaging element and imaging apparatus
KR1020167021504A KR102369400B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치

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KR1020167021504A Division KR102369400B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치

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KR1020237005817A Division KR102551950B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치

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KR20220025915A KR20220025915A (ko) 2022-03-03
KR102503871B1 true KR102503871B1 (ko) 2023-02-27

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KR1020167021504A Active KR102369400B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치
KR1020227004827A Active KR102503871B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치

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US (3) US10008525B2 (enExample)
EP (3) EP3111479B1 (enExample)
JP (1) JP6094511B2 (enExample)
KR (3) KR102551950B1 (enExample)
CN (3) CN110190081B (enExample)
TW (1) TWI656630B (enExample)
WO (1) WO2015129197A1 (enExample)

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JP6094511B2 (ja) * 2014-02-25 2017-03-15 ソニー株式会社 撮像素子および撮像装置
US9960783B2 (en) * 2015-09-18 2018-05-01 Taiwan Semiconductor Manufacturing Company Ltd. Conditional correlated multiple sampling single slope analog-to-digital converter, and associated image sensor system and method
KR102114629B1 (ko) * 2015-09-30 2020-05-25 가부시키가이샤 니콘 촬상 소자 및 전자 카메라
JP6646824B2 (ja) * 2016-01-22 2020-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018019335A (ja) * 2016-07-29 2018-02-01 ソニー株式会社 撮像素子および撮像装置
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックＩｐマネジメント株式会社 撮像装置
EP3941033A4 (en) * 2019-03-13 2022-04-06 Sony Semiconductor Solutions Corporation SOLID STATE IMAGING DEVICE, ELECTRONIC DEVICE AND METHOD FOR CONTROLLING A SOLID STATE IMAGING DEVICE
KR20210034918A (ko) * 2019-09-23 2021-03-31 삼성전자주식회사 전하 펌프 회로 및 이를 포함하는 이미지 센서
EP3828846B1 (en) * 2019-11-26 2022-07-13 Axis AB Camera device
US12137297B2 (en) 2019-12-02 2024-11-05 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
US11095843B2 (en) * 2019-12-02 2021-08-17 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
CN115004688B (zh) 2020-01-29 2025-10-21 索尼半导体解决方案公司 成像装置、电子装置和成像方法
JPWO2021161791A1 (enExample) * 2020-02-13 2021-08-19
WO2023002566A1 (ja) 2021-07-20 2023-01-26 オリンパスメディカルシステムズ株式会社 撮像装置、スコープ、および内視鏡システム
JP2023142256A (ja) * 2022-03-24 2023-10-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び半導体装置の製造方法
US20230411431A1 (en) * 2022-05-17 2023-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor and method of manufacturing the same
WO2024176641A1 (ja) * 2023-02-24 2024-08-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器

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Also Published As

Publication number Publication date
EP3111479A1 (en) 2017-01-04
EP3547370B1 (en) 2023-06-28
CN106030803B (zh) 2019-07-12
TWI656630B (zh) 2019-04-11
EP4181204A1 (en) 2023-05-17
CN110190081A (zh) 2019-08-30
KR20160125954A (ko) 2016-11-01
WO2015129197A1 (en) 2015-09-03
KR102369400B1 (ko) 2022-03-04
KR20230030034A (ko) 2023-03-03
US20180269243A1 (en) 2018-09-20
CN110248122B (zh) 2021-09-17
JP2015159501A (ja) 2015-09-03
KR102551950B1 (ko) 2023-07-06
TW201535702A (zh) 2015-09-16
CN106030803A (zh) 2016-10-12
KR20220025915A (ko) 2022-03-03
US20170053957A1 (en) 2017-02-23
US20200098805A1 (en) 2020-03-26
JP6094511B2 (ja) 2017-03-15
EP3547370A1 (en) 2019-10-02
US10008525B2 (en) 2018-06-26
EP3111479B1 (en) 2019-05-22
US10840283B2 (en) 2020-11-17
CN110248122A (zh) 2019-09-17
US10529756B2 (en) 2020-01-07
CN110190081B (zh) 2020-12-18

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