KR102482697B1 - 본딩된 메모리 장치 및 그 제조 방법 - Google Patents

본딩된 메모리 장치 및 그 제조 방법 Download PDF

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KR102482697B1
KR102482697B1 KR1020217002628A KR20217002628A KR102482697B1 KR 102482697 B1 KR102482697 B1 KR 102482697B1 KR 1020217002628 A KR1020217002628 A KR 1020217002628A KR 20217002628 A KR20217002628 A KR 20217002628A KR 102482697 B1 KR102482697 B1 KR 102482697B1
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forming
wafer
layer
substrate
array
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KR20210028209A (ko
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쉥웨이 양
종이 시아
쿤 한
캉 리
샤오광 왕
홍빈 주
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양쯔 메모리 테크놀로지스 씨오., 엘티디.
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    • H01L25/50—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H01L25/0657—
    • H01L27/105—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H01L2225/06524—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020217002628A 2018-11-30 2018-11-30 본딩된 메모리 장치 및 그 제조 방법 Active KR102482697B1 (ko)

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PCT/CN2018/118705 WO2020107452A1 (en) 2018-11-30 2018-11-30 Bonded memory device and fabrication methods thereof

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KR20210028209A KR20210028209A (ko) 2021-03-11
KR102482697B1 true KR102482697B1 (ko) 2022-12-28

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US (3) US11114453B2 (https=)
EP (2) EP4471855A3 (https=)
JP (3) JP7442504B2 (https=)
KR (1) KR102482697B1 (https=)
CN (2) CN111739792B (https=)
TW (1) TWI694596B (https=)
WO (1) WO2020107452A1 (https=)

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CN109643643A (zh) 2019-04-16
JP2025096318A (ja) 2025-06-26
EP4471855A3 (en) 2025-03-19
US20200176466A1 (en) 2020-06-04
US20210104542A1 (en) 2021-04-08
JP7661454B2 (ja) 2025-04-14
CN109643643B (zh) 2020-08-25
JP2024019275A (ja) 2024-02-08
JP2021535597A (ja) 2021-12-16
CN111739792B (zh) 2021-06-08
EP3844810A4 (en) 2022-06-01
US12232316B2 (en) 2025-02-18
US11114453B2 (en) 2021-09-07
US20250089254A1 (en) 2025-03-13
TWI694596B (zh) 2020-05-21
CN111739792A (zh) 2020-10-02
TW202023027A (zh) 2020-06-16
KR20210028209A (ko) 2021-03-11
EP3844810A1 (en) 2021-07-07
JP7442504B2 (ja) 2024-03-04
EP4471855A2 (en) 2024-12-04
WO2020107452A1 (en) 2020-06-04

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