KR102401183B1 - 메모리 장치 및 그 동작 방법 - Google Patents

메모리 장치 및 그 동작 방법 Download PDF

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Publication number
KR102401183B1
KR102401183B1 KR1020170165843A KR20170165843A KR102401183B1 KR 102401183 B1 KR102401183 B1 KR 102401183B1 KR 1020170165843 A KR1020170165843 A KR 1020170165843A KR 20170165843 A KR20170165843 A KR 20170165843A KR 102401183 B1 KR102401183 B1 KR 102401183B1
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South Korea
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memory
read
memory cell
state
memory cells
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Korean (ko)
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KR20190066271A (ko
Inventor
임채욱
나태희
선우정
이용준
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삼성전자주식회사
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Priority to KR1020170165843A priority Critical patent/KR102401183B1/ko
Priority to US16/034,850 priority patent/US10580488B2/en
Priority to JP2018186436A priority patent/JP7097792B2/ja
Priority to DE102018128329.6A priority patent/DE102018128329A1/de
Priority to CN201811375197.1A priority patent/CN109872751B/zh
Publication of KR20190066271A publication Critical patent/KR20190066271A/ko
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Publication of KR102401183B1 publication Critical patent/KR102401183B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0047—Read destroying or disturbing the data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
KR1020170165843A 2017-12-05 2017-12-05 메모리 장치 및 그 동작 방법 Active KR102401183B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020170165843A KR102401183B1 (ko) 2017-12-05 2017-12-05 메모리 장치 및 그 동작 방법
US16/034,850 US10580488B2 (en) 2017-12-05 2018-07-13 Memory device for generating a compensation current based on a difference between a first read voltage and a second read voltage and a method of operating the same
JP2018186436A JP7097792B2 (ja) 2017-12-05 2018-10-01 メモリ装置及びその動作方法
DE102018128329.6A DE102018128329A1 (de) 2017-12-05 2018-11-13 Speichervorrichtung und Verfahren zum Betreiben derselben
CN201811375197.1A CN109872751B (zh) 2017-12-05 2018-11-19 存储器装置及其操作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170165843A KR102401183B1 (ko) 2017-12-05 2017-12-05 메모리 장치 및 그 동작 방법

Publications (2)

Publication Number Publication Date
KR20190066271A KR20190066271A (ko) 2019-06-13
KR102401183B1 true KR102401183B1 (ko) 2022-05-24

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KR1020170165843A Active KR102401183B1 (ko) 2017-12-05 2017-12-05 메모리 장치 및 그 동작 방법

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US (1) US10580488B2 (enExample)
JP (1) JP7097792B2 (enExample)
KR (1) KR102401183B1 (enExample)
CN (1) CN109872751B (enExample)
DE (1) DE102018128329A1 (enExample)

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KR102427895B1 (ko) * 2018-02-08 2022-08-02 에스케이하이닉스 주식회사 저항 메모리 소자의 읽기 방법
KR102701814B1 (ko) * 2019-02-27 2024-09-03 에스케이하이닉스 주식회사 효율적인 리드 동작을 수행하는 비휘발성 메모리 장치 및 이를 이용하는 시스템
US10867671B1 (en) * 2019-07-02 2020-12-15 Micron Technology, Inc. Techniques for applying multiple voltage pulses to select a memory cell
US10942655B2 (en) * 2019-07-09 2021-03-09 Seagate Technology Llc Mitigating data errors in a storage device
JP2023025932A (ja) * 2021-08-11 2023-02-24 ソニーセミコンダクタソリューションズ株式会社 メモリモジュール
FR3155310A1 (fr) * 2023-11-10 2025-05-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Estimation de l’état initial d’un élément résistif

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US6768665B2 (en) 2002-08-05 2004-07-27 Intel Corporation Refreshing memory cells of a phase change material memory device
JP4189395B2 (ja) * 2004-07-28 2008-12-03 シャープ株式会社 不揮発性半導体記憶装置及び読み出し方法
KR100610014B1 (ko) * 2004-09-06 2006-08-09 삼성전자주식회사 리키지 전류 보상 가능한 반도체 메모리 장치
US7193898B2 (en) * 2005-06-20 2007-03-20 Sandisk Corporation Compensation currents in non-volatile memory read operations
US7679980B2 (en) 2006-11-21 2010-03-16 Qimonda North America Corp. Resistive memory including selective refresh operation
US7990761B2 (en) 2008-03-31 2011-08-02 Ovonyx, Inc. Immunity of phase change material to disturb in the amorphous phase
KR20090126587A (ko) * 2008-06-04 2009-12-09 삼성전자주식회사 상 변화 메모리 장치 및 그것의 읽기 방법
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
KR20110107190A (ko) 2010-03-24 2011-09-30 삼성전자주식회사 저항성 메모리의 마모 셀 관리 방법 및 장치
US8467237B2 (en) * 2010-10-15 2013-06-18 Micron Technology, Inc. Read distribution management for phase change memory
US20130336047A1 (en) 2012-04-24 2013-12-19 Being Advanced Memory Corporation Cell Refresh in Phase Change Memory
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KR102023358B1 (ko) * 2012-10-29 2019-09-20 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법
KR20140090879A (ko) * 2013-01-10 2014-07-18 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 읽기 방법
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KR20160074238A (ko) * 2014-12-18 2016-06-28 에스케이하이닉스 주식회사 전자 장치 및 전자 장치의 동작 방법
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Also Published As

Publication number Publication date
KR20190066271A (ko) 2019-06-13
JP2019102117A (ja) 2019-06-24
JP7097792B2 (ja) 2022-07-08
US10580488B2 (en) 2020-03-03
DE102018128329A1 (de) 2019-06-06
CN109872751B (zh) 2024-09-10
US20190172531A1 (en) 2019-06-06
CN109872751A (zh) 2019-06-11

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