JP7097792B2 - メモリ装置及びその動作方法 - Google Patents

メモリ装置及びその動作方法 Download PDF

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Publication number
JP7097792B2
JP7097792B2 JP2018186436A JP2018186436A JP7097792B2 JP 7097792 B2 JP7097792 B2 JP 7097792B2 JP 2018186436 A JP2018186436 A JP 2018186436A JP 2018186436 A JP2018186436 A JP 2018186436A JP 7097792 B2 JP7097792 B2 JP 7097792B2
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memory
memory cell
read
state
read voltage
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JP2019102117A (ja
JP2019102117A5 (enExample
Inventor
菜▲うく▼ 林
太熙 羅
禎 鮮于
▲よん▼▲じゅん▼ 李
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0047—Read destroying or disturbing the data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2018186436A 2017-12-05 2018-10-01 メモリ装置及びその動作方法 Active JP7097792B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170165843A KR102401183B1 (ko) 2017-12-05 2017-12-05 메모리 장치 및 그 동작 방법
KR10-2017-0165843 2017-12-05

Publications (3)

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JP2019102117A JP2019102117A (ja) 2019-06-24
JP2019102117A5 JP2019102117A5 (enExample) 2021-09-24
JP7097792B2 true JP7097792B2 (ja) 2022-07-08

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JP2018186436A Active JP7097792B2 (ja) 2017-12-05 2018-10-01 メモリ装置及びその動作方法

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US (1) US10580488B2 (enExample)
JP (1) JP7097792B2 (enExample)
KR (1) KR102401183B1 (enExample)
CN (1) CN109872751B (enExample)
DE (1) DE102018128329A1 (enExample)

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KR102701814B1 (ko) * 2019-02-27 2024-09-03 에스케이하이닉스 주식회사 효율적인 리드 동작을 수행하는 비휘발성 메모리 장치 및 이를 이용하는 시스템
US10867671B1 (en) * 2019-07-02 2020-12-15 Micron Technology, Inc. Techniques for applying multiple voltage pulses to select a memory cell
US10942655B2 (en) * 2019-07-09 2021-03-09 Seagate Technology Llc Mitigating data errors in a storage device
JP2023025932A (ja) * 2021-08-11 2023-02-24 ソニーセミコンダクタソリューションズ株式会社 メモリモジュール
FR3155310A1 (fr) * 2023-11-10 2025-05-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Estimation de l’état initial d’un élément résistif

Citations (1)

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WO2016084497A1 (ja) 2014-11-26 2016-06-02 ソニー株式会社 メモリシステム、記憶装置、および、メモリシステムの制御方法

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KR100610014B1 (ko) * 2004-09-06 2006-08-09 삼성전자주식회사 리키지 전류 보상 가능한 반도체 메모리 장치
US7193898B2 (en) * 2005-06-20 2007-03-20 Sandisk Corporation Compensation currents in non-volatile memory read operations
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US7990761B2 (en) 2008-03-31 2011-08-02 Ovonyx, Inc. Immunity of phase change material to disturb in the amorphous phase
KR20090126587A (ko) * 2008-06-04 2009-12-09 삼성전자주식회사 상 변화 메모리 장치 및 그것의 읽기 방법
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
KR20110107190A (ko) 2010-03-24 2011-09-30 삼성전자주식회사 저항성 메모리의 마모 셀 관리 방법 및 장치
US8467237B2 (en) * 2010-10-15 2013-06-18 Micron Technology, Inc. Read distribution management for phase change memory
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KR102023358B1 (ko) * 2012-10-29 2019-09-20 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법
KR20140090879A (ko) * 2013-01-10 2014-07-18 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 읽기 방법
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Also Published As

Publication number Publication date
KR20190066271A (ko) 2019-06-13
JP2019102117A (ja) 2019-06-24
US10580488B2 (en) 2020-03-03
KR102401183B1 (ko) 2022-05-24
DE102018128329A1 (de) 2019-06-06
CN109872751B (zh) 2024-09-10
US20190172531A1 (en) 2019-06-06
CN109872751A (zh) 2019-06-11

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