JP7097792B2 - メモリ装置及びその動作方法 - Google Patents
メモリ装置及びその動作方法 Download PDFInfo
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- JP7097792B2 JP7097792B2 JP2018186436A JP2018186436A JP7097792B2 JP 7097792 B2 JP7097792 B2 JP 7097792B2 JP 2018186436 A JP2018186436 A JP 2018186436A JP 2018186436 A JP2018186436 A JP 2018186436A JP 7097792 B2 JP7097792 B2 JP 7097792B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0097—Erasing, e.g. resetting, circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0047—Read destroying or disturbing the data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Description
20、220: メモリコントローラ
30: メモリセルアレイ
100、210: メモリセル
230: 読み出し回路
Claims (10)
- スイッチ素子、及び前記スイッチ素子と連結され、相変化物質を有する情報格納素子を有するメモリセルを複数含むメモリセルアレイと、
前記メモリセルに第1読み出し電流を入力して第1読み出し電圧を検出し、前記メモリセルに第2読み出し電流を入力して第2読み出し電圧を検出し、前記第1読み出し電圧を用いて判断した前記メモリセルの第1状態が、前記第2読み出し電圧を用いて判断した前記メモリセルの第2状態と互いに異なると、前記第2読み出し電圧を検出した後に、前記情報格納素子の抵抗値を低くする補償電流を前記メモリセルに入力するメモリコントローラと、を含むメモリ装置。 - 前記メモリコントローラは、前記第1状態がセット状態であり、前記第2状態がリセット状態であると、前記補償電流を前記メモリセルに入力する、請求項1に記載のメモリ装置。
- 前記メモリコントローラは、前記補償電流を入力する前記メモリセルの状態を前記セット状態であると判断する、請求項2に記載のメモリ装置。
- 前記メモリコントローラは、前記第1読み出し電圧と前記第2読み出し電圧との差に基づいて、前記補償電流の大きさ及び前記補償電流の入力時間のうち少なくとも一つを調節する、請求項1に記載のメモリ装置。
- 前記補償電流の入力時間は、前記第1読み出し電流及び前記第2読み出し電流のそれぞれの入力時間より長い、請求項4に記載のメモリ装置。
- 前記メモリコントローラは、前記第1状態と前記第2状態とが同一であり、前記第2読み出し電圧と前記第1読み出し電圧との差が所定の基準値より大きいと、前記補償電流を前記メモリセルに入力する、請求項1に記載のメモリ装置。
- スイッチ素子、及び前記スイッチ素子と連結され、相変化物質を有する情報格納素子を有するメモリセルを複数含むメモリセルアレイと、
前記メモリセルに読み出し電流を入力して第1読み出し電圧及び第2読み出し電圧を一回の読み出し動作の間に順次に検出し、前記第1読み出し電圧に基づいて前記メモリセルがセット状態であると判断され、前記第2読み出し電圧に基づいて前記メモリセルがリセット状態であると判断されると、前記メモリセルを前記セット状態に設定する補償電流を前記メモリセルに入力するメモリコントローラと、を含むメモリ装置。 - セット状態及びリセット状態のいずれか一つの状態を有する複数のメモリセルを有するメモリセルアレイと、
前記メモリセルアレイに対する読み出し動作を行う間に、前記複数のメモリセルの中から前記セット状態を有する第1メモリセルを選択し、前記第1メモリセルの中から前記リセット状態に転換された第2メモリセルを選択し、前記第2メモリセルを前記セット状態に設定する補償電流を前記第2メモリセルに入力するメモリコントローラと、を含むメモリ装置。 - 前記メモリコントローラは、前記複数のメモリセルに読み出し電流が入力される間に、前記第1メモリセルを選択するための1次センシングと、前記第2メモリセルを選択するための2次センシングを順次に行う、請求項8に記載のメモリ装置。
- 前記メモリコントローラは、前記読み出し電流のデベロップ区間の間に、前記1次センシング及び前記2次センシングを順次に行う、請求項9に記載のメモリ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2017-0165843 | 2017-12-05 | ||
KR1020170165843A KR102401183B1 (ko) | 2017-12-05 | 2017-12-05 | 메모리 장치 및 그 동작 방법 |
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JP2019102117A JP2019102117A (ja) | 2019-06-24 |
JP2019102117A5 JP2019102117A5 (ja) | 2021-09-24 |
JP7097792B2 true JP7097792B2 (ja) | 2022-07-08 |
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US (1) | US10580488B2 (ja) |
JP (1) | JP7097792B2 (ja) |
KR (1) | KR102401183B1 (ja) |
CN (1) | CN109872751A (ja) |
DE (1) | DE102018128329A1 (ja) |
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KR102427895B1 (ko) * | 2018-02-08 | 2022-08-02 | 에스케이하이닉스 주식회사 | 저항 메모리 소자의 읽기 방법 |
KR20200104603A (ko) * | 2019-02-27 | 2020-09-04 | 에스케이하이닉스 주식회사 | 효율적인 리드 동작을 수행하는 비휘발성 메모리 장치 및 이를 이용하는 시스템 |
US10867671B1 (en) | 2019-07-02 | 2020-12-15 | Micron Technology, Inc. | Techniques for applying multiple voltage pulses to select a memory cell |
US10942655B2 (en) * | 2019-07-09 | 2021-03-09 | Seagate Technology Llc | Mitigating data errors in a storage device |
Citations (1)
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- 2018-10-01 JP JP2018186436A patent/JP7097792B2/ja active Active
- 2018-11-13 DE DE102018128329.6A patent/DE102018128329A1/de active Pending
- 2018-11-19 CN CN201811375197.1A patent/CN109872751A/zh active Pending
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WO2016084497A1 (ja) | 2014-11-26 | 2016-06-02 | ソニー株式会社 | メモリシステム、記憶装置、および、メモリシステムの制御方法 |
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CN109872751A (zh) | 2019-06-11 |
KR20190066271A (ko) | 2019-06-13 |
US10580488B2 (en) | 2020-03-03 |
US20190172531A1 (en) | 2019-06-06 |
JP2019102117A (ja) | 2019-06-24 |
DE102018128329A1 (de) | 2019-06-06 |
KR102401183B1 (ko) | 2022-05-24 |
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