KR102400322B1 - 챔버 세정 및 반도체 식각 기체 - Google Patents

챔버 세정 및 반도체 식각 기체 Download PDF

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Publication number
KR102400322B1
KR102400322B1 KR1020167017394A KR20167017394A KR102400322B1 KR 102400322 B1 KR102400322 B1 KR 102400322B1 KR 1020167017394 A KR1020167017394 A KR 1020167017394A KR 20167017394 A KR20167017394 A KR 20167017394A KR 102400322 B1 KR102400322 B1 KR 102400322B1
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Prior art keywords
gas
fluoroolefin
semiconductor
process chamber
plasma
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Korean (ko)
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KR20160105407A (ko
Inventor
셍 펭
게리 로
오오사끼 요시마사
Original Assignee
더 케무어스 컴퍼니 에프씨, 엘엘씨
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Priority to KR1020227016479A priority Critical patent/KR102476934B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01L21/3065—
    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020167017394A 2013-12-30 2014-12-22 챔버 세정 및 반도체 식각 기체 Active KR102400322B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227016479A KR102476934B1 (ko) 2013-12-30 2014-12-22 챔버 세정 및 반도체 식각 기체

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361921594P 2013-12-30 2013-12-30
US61/921,594 2013-12-30
PCT/US2014/071927 WO2015103003A1 (en) 2013-12-30 2014-12-22 Chamber cleaning and semiconductor etching gases

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227016479A Division KR102476934B1 (ko) 2013-12-30 2014-12-22 챔버 세정 및 반도체 식각 기체

Publications (2)

Publication Number Publication Date
KR20160105407A KR20160105407A (ko) 2016-09-06
KR102400322B1 true KR102400322B1 (ko) 2022-05-20

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KR1020167017394A Active KR102400322B1 (ko) 2013-12-30 2014-12-22 챔버 세정 및 반도체 식각 기체
KR1020227016479A Active KR102476934B1 (ko) 2013-12-30 2014-12-22 챔버 세정 및 반도체 식각 기체

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Country Status (8)

Country Link
US (3) US10109496B2 (enExample)
EP (1) EP3090073B1 (enExample)
JP (2) JP6462699B2 (enExample)
KR (2) KR102400322B1 (enExample)
CN (2) CN112981369B (enExample)
SG (2) SG10201906117XA (enExample)
TW (2) TWI703206B (enExample)
WO (1) WO2015103003A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10109496B2 (en) * 2013-12-30 2018-10-23 The Chemours Company Fc, Llc Chamber cleaning and semiconductor etching gases
JP2016207788A (ja) * 2015-04-20 2016-12-08 東京エレクトロン株式会社 上部電極の表面処理方法、プラズマ処理装置及び上部電極
US10312102B2 (en) * 2016-08-29 2019-06-04 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
US10446405B2 (en) 2017-02-23 2019-10-15 Tokyo Electron Limited Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures
WO2018156975A1 (en) 2017-02-23 2018-08-30 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
WO2019108844A1 (en) * 2017-11-30 2019-06-06 Lam Research Corporation Silicon oxide silicon nitride stack stair step etch
CN112823148B (zh) * 2018-10-09 2024-10-15 大金工业株式会社 全氟炔烃化合物的制造方法
JP7391297B2 (ja) * 2019-06-28 2023-12-05 株式会社Flosfia エッチング処理方法およびエッチング処理装置
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
KR102828130B1 (ko) 2020-10-15 2025-07-03 가부시끼가이샤 레조낙 에칭 가스 및 그 제조 방법, 및 에칭 방법, 반도체 소자의 제조 방법
KR102828127B1 (ko) 2020-10-15 2025-07-03 가부시끼가이샤 레조낙 에칭 가스 및 그 제조 방법, 및 에칭 방법, 반도체 소자의 제조 방법
TWI748741B (zh) * 2020-11-11 2021-12-01 暉盛科技股份有限公司 電漿晶圓清潔機及使用其清潔晶圓的方法
KR102244885B1 (ko) * 2021-02-03 2021-04-27 (주)원익머트리얼즈 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정
KR102582730B1 (ko) * 2021-04-07 2023-09-25 (주)후성 플루오르화 시클로프로판 가스의 제조방법 및 이를 포함하는 에칭용 가스 조성물
WO2025019740A1 (en) * 2023-07-20 2025-01-23 The Chemours Company Fc, Llc Compositions comprising 1,1,1,4,4,4-hexafluoro-2-butyne
WO2025259960A1 (en) * 2024-06-14 2025-12-18 Applied Materials, Inc. Vapor phase alkali metal removal for in-situ cleaning of processing chamber

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013015033A1 (ja) * 2011-07-27 2013-01-31 セントラル硝子株式会社 ドライエッチング剤

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09191002A (ja) * 1996-01-10 1997-07-22 Sony Corp プラズマエッチング方法
US5824375A (en) 1996-10-24 1998-10-20 Applied Materials, Inc. Decontamination of a plasma reactor using a plasma after a chamber clean
WO1999008805A1 (en) 1997-08-20 1999-02-25 Air Liquide Electronics Chemicals & Services, Inc. Plasma cleaning and etching methods using non-global-warming compounds
US6849193B2 (en) * 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US20040035825A1 (en) * 2000-11-08 2004-02-26 Shingo Nakamura Dry etching gas and method for dry etching
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置
US6800210B2 (en) * 2001-05-22 2004-10-05 Reflectivity, Inc. Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
JP2003234299A (ja) * 2002-02-12 2003-08-22 Research Institute Of Innovative Technology For The Earth クリーニングガス及びエッチングガス
JP3527915B2 (ja) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
JP4164643B2 (ja) * 2002-07-17 2008-10-15 日本ゼオン株式会社 ドライエッチング方法及びパーフルオロ−２−ペンチンの製造方法
JP2005142198A (ja) * 2003-11-04 2005-06-02 Taiyo Nippon Sanso Corp クリーニングガス及びクリーニング方法
US20050258137A1 (en) * 2004-03-24 2005-11-24 Sawin Herbert H Remote chamber methods for removing surface deposits
BRPI0508204A (pt) * 2004-03-24 2007-07-17 Massachusetts Inst Technology método de remoção de depósitos de uma superfìcie
CN101777492A (zh) * 2004-11-05 2010-07-14 东京毅力科创株式会社 等离子体蚀刻加工方法
JP2006156992A (ja) * 2004-11-05 2006-06-15 Tokyo Electron Ltd プラズマ処理方法
US8187415B2 (en) 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
JP2008244144A (ja) * 2007-03-27 2008-10-09 Toshiba Corp 半導体装置の製造方法
JP5226296B2 (ja) * 2007-12-27 2013-07-03 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP2011124239A (ja) 2008-03-31 2011-06-23 Daikin Industries Ltd ドライエッチングガス及びそれを用いたドライエッチング方法
JP5266902B2 (ja) * 2008-06-20 2013-08-21 日本ゼオン株式会社 含フッ素オレフィン化合物の製造方法
KR20110125263A (ko) * 2009-03-06 2011-11-18 솔베이 플루오르 게엠베하 불포화 수소화불화탄소의 용도
JP5434970B2 (ja) * 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
US10109496B2 (en) * 2013-12-30 2018-10-23 The Chemours Company Fc, Llc Chamber cleaning and semiconductor etching gases

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013015033A1 (ja) * 2011-07-27 2013-01-31 セントラル硝子株式会社 ドライエッチング剤

Also Published As

Publication number Publication date
KR20220070062A (ko) 2022-05-27
US20160343579A1 (en) 2016-11-24
TW201920614A (zh) 2019-06-01
SG10201906117XA (en) 2019-08-27
EP3090073B1 (en) 2020-02-05
SG11201605356PA (en) 2016-07-28
CN112981369A (zh) 2021-06-18
US20180366339A1 (en) 2018-12-20
TW201534689A (zh) 2015-09-16
TWI703206B (zh) 2020-09-01
JP2019057737A (ja) 2019-04-11
TWI650405B (zh) 2019-02-11
EP3090073A1 (en) 2016-11-09
KR102476934B1 (ko) 2022-12-14
US20190027375A1 (en) 2019-01-24
CN106414798B (zh) 2021-04-06
JP2017503350A (ja) 2017-01-26
JP6462699B2 (ja) 2019-01-30
JP6775569B2 (ja) 2020-10-28
US10109496B2 (en) 2018-10-23
CN106414798A (zh) 2017-02-15
WO2015103003A1 (en) 2015-07-09
KR20160105407A (ko) 2016-09-06
CN112981369B (zh) 2023-11-10

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