KR102390227B1 - 텅스텐 버핑용 조성물 - Google Patents

텅스텐 버핑용 조성물 Download PDF

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Publication number
KR102390227B1
KR102390227B1 KR1020167028910A KR20167028910A KR102390227B1 KR 102390227 B1 KR102390227 B1 KR 102390227B1 KR 1020167028910 A KR1020167028910 A KR 1020167028910A KR 20167028910 A KR20167028910 A KR 20167028910A KR 102390227 B1 KR102390227 B1 KR 102390227B1
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South Korea
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composition
colloidal silica
acid
abrasive particles
silica abrasive
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Korean (ko)
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KR20160135767A (ko
Inventor
린 푸
제프리 다이사드
스티븐 그럼빈
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씨엠씨 머티리얼즈, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/745—Iron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020167028910A 2014-03-21 2015-03-20 텅스텐 버핑용 조성물 Active KR102390227B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/222,086 US9309442B2 (en) 2014-03-21 2014-03-21 Composition for tungsten buffing
US14/222,086 2014-03-21
PCT/US2015/021666 WO2015143270A1 (en) 2014-03-21 2015-03-20 Composition for tungsten buffing

Publications (2)

Publication Number Publication Date
KR20160135767A KR20160135767A (ko) 2016-11-28
KR102390227B1 true KR102390227B1 (ko) 2022-04-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167028910A Active KR102390227B1 (ko) 2014-03-21 2015-03-20 텅스텐 버핑용 조성물

Country Status (7)

Country Link
US (1) US9309442B2 (https=)
EP (1) EP3120380B1 (https=)
JP (1) JP6616394B2 (https=)
KR (1) KR102390227B1 (https=)
CN (1) CN106133881B (https=)
TW (1) TWI535836B (https=)
WO (1) WO2015143270A1 (https=)

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KR102464630B1 (ko) * 2014-06-25 2022-11-08 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 조성물
US10688623B2 (en) * 2014-09-30 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispersion system with real time control
JP2017061612A (ja) * 2015-09-25 2017-03-30 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US20190112196A1 (en) * 2016-03-30 2019-04-18 Fujimi Incorporated Cation-modified silica raw material dispersion
US10316218B2 (en) * 2017-08-30 2019-06-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
WO2019055749A1 (en) 2017-09-15 2019-03-21 Cabot Microelectronics Corporation COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING (CMP) OF TUNGSTEN
US10647887B2 (en) 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
TWI769619B (zh) 2020-01-07 2022-07-01 美商Ｃｍｃ材料股份有限公司 經衍生的聚胺基酸
KR20210095465A (ko) 2020-01-23 2021-08-02 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
CN111593350A (zh) * 2020-06-18 2020-08-28 周家勤 一种铝合金镜面化学抛光液及其抛光方法
KR102531445B1 (ko) * 2020-10-28 2023-05-12 주식회사 케이씨텍 연마 슬러리 조성물
KR102782549B1 (ko) * 2021-08-23 2025-03-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR20250059910A (ko) * 2023-10-25 2025-05-07 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

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Publication number Publication date
EP3120380A4 (en) 2017-12-13
JP6616394B2 (ja) 2019-12-04
CN106133881A (zh) 2016-11-16
KR20160135767A (ko) 2016-11-28
WO2015143270A1 (en) 2015-09-24
JP2017517900A (ja) 2017-06-29
TW201546252A (zh) 2015-12-16
EP3120380A1 (en) 2017-01-25
US20150267081A1 (en) 2015-09-24
US9309442B2 (en) 2016-04-12
TWI535836B (zh) 2016-06-01
EP3120380B1 (en) 2019-03-06
CN106133881B (zh) 2019-01-08

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