JP2019502252A - カチオン性界面活性剤及びシクロデキストリンを含むタングステン処理スラリー - Google Patents
カチオン性界面活性剤及びシクロデキストリンを含むタングステン処理スラリー Download PDFInfo
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- JP2019502252A JP2019502252A JP2018519726A JP2018519726A JP2019502252A JP 2019502252 A JP2019502252 A JP 2019502252A JP 2018519726 A JP2018519726 A JP 2018519726A JP 2018519726 A JP2018519726 A JP 2018519726A JP 2019502252 A JP2019502252 A JP 2019502252A
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- Japan
- Prior art keywords
- composition
- cyclodextrin
- cationic surfactant
- particles
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 239000010937 tungsten Substances 0.000 title claims abstract description 110
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 109
- 229920000858 Cyclodextrin Polymers 0.000 title claims abstract description 103
- 239000002002 slurry Substances 0.000 title claims abstract description 102
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000003093 cationic surfactant Substances 0.000 title claims description 105
- 239000000203 mixture Substances 0.000 claims abstract description 236
- 238000005498 polishing Methods 0.000 claims abstract description 234
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 66
- 239000000126 substance Substances 0.000 claims abstract description 35
- 125000002091 cationic group Chemical group 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims description 261
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 168
- 150000001767 cationic compounds Chemical class 0.000 claims description 64
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 60
- 150000001875 compounds Chemical class 0.000 claims description 54
- -1 nitrogen-containing compound Chemical class 0.000 claims description 52
- 125000000217 alkyl group Chemical group 0.000 claims description 49
- 125000004432 carbon atom Chemical group C* 0.000 claims description 49
- 239000003054 catalyst Substances 0.000 claims description 49
- 239000007788 liquid Substances 0.000 claims description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims description 31
- 125000005842 heteroatom Chemical group 0.000 claims description 27
- 229910052742 iron Inorganic materials 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 239000007800 oxidant agent Substances 0.000 claims description 22
- 150000001768 cations Chemical class 0.000 claims description 21
- 239000003112 inhibitor Substances 0.000 claims description 21
- 239000011164 primary particle Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 229920006395 saturated elastomer Polymers 0.000 claims description 20
- 239000004094 surface-active agent Substances 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 125000004122 cyclic group Chemical group 0.000 claims description 16
- 239000001116 FEMA 4028 Substances 0.000 claims description 14
- 229960004853 betadex Drugs 0.000 claims description 14
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 claims description 12
- 235000011175 beta-cyclodextrine Nutrition 0.000 claims description 12
- 229920001450 Alpha-Cyclodextrin Polymers 0.000 claims description 9
- 230000002209 hydrophobic effect Effects 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- HFHDHCJBZVLPGP-RWMJIURBSA-N alpha-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO HFHDHCJBZVLPGP-RWMJIURBSA-N 0.000 claims description 8
- 229940043377 alpha-cyclodextrin Drugs 0.000 claims description 8
- GDSRMADSINPKSL-HSEONFRVSA-N gamma-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO GDSRMADSINPKSL-HSEONFRVSA-N 0.000 claims description 8
- 229940080345 gamma-cyclodextrin Drugs 0.000 claims description 8
- 238000007790 scraping Methods 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 125000005647 linker group Chemical group 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 239000013543 active substance Substances 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 description 109
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 27
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- 239000000243 solution Substances 0.000 description 14
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 238000012876 topography Methods 0.000 description 11
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 10
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- 229940097362 cyclodextrins Drugs 0.000 description 9
- 239000006193 liquid solution Substances 0.000 description 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 150000001412 amines Chemical class 0.000 description 8
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- 230000001590 oxidative effect Effects 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 7
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 7
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
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- 239000003139 biocide Substances 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
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- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 6
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
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- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 4
- GBJHAEPTEZMDHU-UHFFFAOYSA-M 1-heptyl-4-pyridin-4-ylpyridin-1-ium;bromide Chemical compound [Br-].C1=C[N+](CCCCCCC)=CC=C1C1=CC=NC=C1 GBJHAEPTEZMDHU-UHFFFAOYSA-M 0.000 description 3
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- PMAOKILDNNXBSR-UHFFFAOYSA-N iron;propanedioic acid Chemical compound [Fe].OC(=O)CC(O)=O PMAOKILDNNXBSR-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- AZFQCTBZOPUVOW-UHFFFAOYSA-N methyl(triphenyl)phosphanium Chemical compound C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C)C1=CC=CC=C1 AZFQCTBZOPUVOW-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012452 mother liquor Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 229920001542 oligosaccharide Polymers 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- NNPKVBBGSBIZFD-UHFFFAOYSA-N phosphane silane Chemical class [SiH4].P NNPKVBBGSBIZFD-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004627 regenerated cellulose Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 125000005346 substituted cycloalkyl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- SZWHXXNVLACKBV-UHFFFAOYSA-N tetraethylphosphanium Chemical compound CC[P+](CC)(CC)CC SZWHXXNVLACKBV-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- BXYHVFRRNNWPMB-UHFFFAOYSA-N tetramethylphosphanium Chemical compound C[P+](C)(C)C BXYHVFRRNNWPMB-UHFFFAOYSA-N 0.000 description 1
- GJSGYPDDPQRWPK-UHFFFAOYSA-N tetrapentylammonium Chemical compound CCCCC[N+](CCCCC)(CCCCC)CCCCC GJSGYPDDPQRWPK-UHFFFAOYSA-N 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 1
- XOGCTUKDUDAZKA-UHFFFAOYSA-N tetrapropylphosphanium Chemical compound CCC[P+](CCC)(CCC)CCC XOGCTUKDUDAZKA-UHFFFAOYSA-N 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 150000008501 α-D-glucopyranosides Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/745—Iron
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1は、少なくとも7個の炭素原子、好ましくは8〜18個の炭素原子、例えば12〜18個の炭素原子を含有する、任意選択により置換され、任意選択により不飽和を含有する、直鎖または分岐鎖(好ましくは直鎖)のアルキル基であり、
R2、R3及びR4は、
水素、
置換または無置換であってよく、任意選択によりヘテロ原子、荷電基またはその両方を含んでよい、飽和または不飽和の環状基、
任意選択により不飽和、ヘテロ原子または荷電基のうちの1つ以上を含んでよい線状または分岐状のアルキル基、ならびに
R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができる)の構造を有する化合物が挙げられる。
式II中、Zは、飽和アルキル、不飽和アルキルであり得、あるいは、代替的にまたは追加的に主鎖もしくは置換基の一部であるヘテロ原子(N、O)または別の種類の置換(ハロゲン、水酸化物)を含み得る、二価連結基である。Zの例には、直鎖の二価(アルキレン)基、例えば、メチレン、エチレン、プロピレン、ブチレンなどが挙げられる。これらの実施形態において、式IのR3及びR4と、R5、R6及びR7とは、それぞれ好ましくは独立して、1〜5個の炭素原子を有するアルキル基であり得る。
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1は、少なくとも7個の炭素原子を含有し、任意選択により不飽和を含有する、直鎖または分岐鎖(好ましくは直鎖)のアルキル基であり、
R8、R9、R10、R11及びR12は、
水素、
置換または無置換であってよく、任意選択によりヘテロ原子、荷電基またはその両方を含んでよい、飽和または不飽和の環状基、及び
任意選択により不飽和、ヘテロ原子または荷電基のうちの1つ以上を含んでよい線状または分岐状のアルキル基から独立して選択することができる)によって定義される構造を有するものを含む。
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1は、少なくとも7個の炭素原子を含有し、任意選択により不飽和を含有する、直鎖または分岐鎖(好ましくは直鎖)のアルキル基であり、
R13、R14、R15、R16、R17及びR18は、
水素、
置換または無置換であってよく、任意選択によりヘテロ原子、荷電基またはその両方を含んでよい、飽和または不飽和の環状基、及び
任意選択により不飽和、ヘテロ原子または荷電基のうちの1つ以上を含んでよい線状または分岐状のアルキル基から独立して選択することができる)によって定義される構造を有するものを含む。
液体キャリア中に分散された研磨剤粒子と、
α−シクロデキストリン、β−シクロデキストリン、γ−シクロデキストリンまたはこれらの組み合わせから選択されるシクロデキストリンと、
カチオンを有し、かつそのカチオンから延びて少なくとも7個の炭素原子を含む鎖を含む疎水性尾部を有するカチオン性界面活性剤であって、スラリー中でシクロデキストリンと複合体を形成することができるカチオン性界面活性剤と
を含む、タングステン含有表面を処理するのに有用な化学機械研磨組成物。
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1は、少なくとも7個の炭素原子を含有する、任意選択により置換され、任意選択により不飽和を含有する、直鎖または分岐鎖のアルキル基であり、
R2、R3及びR4は、
水素、
置換または無置換であってよく、任意選択によりヘテロ原子、荷電基またはその両方を含んでよい、飽和または不飽和の環状基、及び
任意選択により不飽和、ヘテロ原子または荷電基のうちの1つ以上を含んでよい線状または分岐状のアルキル基、ならびに
R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができる)
を有する、実施形態1に記載の研磨組成物。
R1は、8〜20個の炭素原子を有するアルキル基であり、
各R3、R4、R5、R6及びR7は、独立して、1〜5個の炭素原子を有するアルキル基であり、
Zは、1〜5個の炭素原子を有する二価連結基である)
を有する、実施形態6に記載の研磨組成物。
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1は、少なくとも7個の炭素原子を含有し、任意選択により不飽和を含有する、直鎖または分岐鎖のアルキル基であり、
R8、R9、R10、R11及びR12は、
水素、
置換または無置換であってよく、任意選択によりヘテロ原子、荷電基またはその両方を含んでよい、飽和または不飽和の環状基、及び
任意選択により不飽和、ヘテロ原子または荷電基のうちの1つ以上を含んでよい線状または分岐状のアルキル基から独立して選択することができる)
を有する、実施形態1に記載の研磨組成物。
約0.001〜約0.5重量%の触媒と
を含む、実施形態1〜22のいずれかに記載の研磨組成物。
(a)基材を、
液体キャリアと、
液体キャリア中に分散されたシリカ研磨剤粒子であって、pH1〜6のスラリー中で少なくとも6ミリボルト(mV)の正電荷を有する粒子と、
α−シクロデキストリン、β−シクロデキストリンまたはγ−シクロデキストリンから選択されるシクロデキストリンと、
カチオンを有し、かつそのカチオンから延びる疎水性末端を有するカチオン性界面活性剤であって、スラリー中でシクロデキストリンと複合体を形成することができるカチオン性界面活性剤とを含むスラリーと接触させることと、
(b)スラリーを基材に対して移動させることと、
(c)基材を削ってタングステンの一部を基材から除去することと
を含む、方法。
(a)基材を実施形態1〜25のいずれかに記載のスラリーと接触させることと、
(b)スラリーを基材に対して移動させることと、
(c)基材を削ってタングステンの一部を基材から除去することと
を含む、方法。
本実施例は、タングステンバフ研磨用途における本発明の研磨組成物のパターン研磨性能に関する利点を実証するものである。比較の配合物及び本発明の配合物を含む研磨組成物を表1に示す。比較例1−Aは、特別設計のコロイダルシリカ粒子(シリカ−A)、硝酸鉄及びマロン酸からなる鉄触媒、加えて、ジカチオン性界面活性剤化合物N,N,N’,N’,N’−ペンタメチル−N−タロー−1,3−プロパンジアンモニウムジクロリドならびに過酸化水素を含有する。シリカ−A粒子は、約50nmの二次粒径及び約12mVの電荷を有する荷電性コロイダルシリカ粒子である。
本実施例は、シクロデキストリンと、シクロデキストリンと複合体を形成することができるカチオン性化合物とを含有する本発明の組成物の欠陥に関する利点を比較配合物と比較して実証するものである。各セットにおいて、比較例及び本発明のスラリーを、シクロデキストリン化合物が存在するという点を除き、同じように調製した。組成物について表3に記載する。
本実施例は、コロイダルシリカ(Fuso Inc.から入手)を研磨剤として使用して本発明に従って配合した本発明の研磨組成物の粒子安定性に関する利点を示すものである。
Claims (28)
- 液体キャリアと、
前記液体キャリア中に分散された研磨剤粒子と、
α−シクロデキストリン、β−シクロデキストリン、γ−シクロデキストリンまたはこれらの組み合わせから選択されるシクロデキストリンと、
カチオンを有し、かつ前記カチオンから延びて少なくとも7個の炭素原子を含む鎖を含む疎水性尾部を有するカチオン性界面活性剤であって、スラリー中で前記シクロデキストリンと複合体を形成することができる前記カチオン性界面活性剤と
を含む、タングステン含有表面を処理するのに有用な化学機械研磨組成物。 - 前記カチオン性界面活性剤が次の構造:
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1は、少なくとも7個の炭素原子を含有する、任意選択により置換され、任意選択により不飽和を含有する、直鎖または分岐鎖のアルキル基であり、
R2、R3及びR4は、
水素、
置換または無置換であってよく、任意選択によりヘテロ原子、荷電基またはその両方を含んでよい、飽和または不飽和の環状基、及び
任意選択により不飽和、ヘテロ原子または荷電基のうちの1つ以上を含んでよい線状または分岐状のアルキル基、ならびに
R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができる)
を有する、請求項1に記載の組成物。 - R1が、7〜20個の炭素原子の線状アルキルである、請求項2に記載の組成物。
- R2が、6個以下の炭素原子を含むアルキル基である、請求項2に記載の組成物。
- R3及びR4のそれぞれが、独立して、1〜6個の炭素原子を有するアルキルである、請求項2に記載の組成物。
- 前記カチオン性界面活性剤がジカチオン性である、請求項2に記載の組成物。
- 前記界面活性剤が、次式:
R1は、8〜20個の炭素原子を有するアルキル基であり、
各R3、R4、R5、R6及びR7は、独立して、1〜5個の炭素原子を有するアルキル基であり、
Zは、1〜5個の炭素原子を有する二価連結基である)
を有する、請求項6に記載の組成物。 - 前記ジカチオン性界面活性剤が、N,N,N’,N’,N’−ペンタメチル−N−タロー−1,3−プロパンジアンモニウムジクロリドである、請求項7に記載の組成物。
- 前記カチオン性界面活性剤が、次式:
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1は、少なくとも7個の炭素原子を含有し、任意選択により不飽和を含有する、直鎖または分岐鎖のアルキル基であり、
R8、R9、R10、R11及びR12は、
水素、
置換または無置換であってよく、任意選択によりヘテロ原子、荷電基またはその両方を含んでよい、飽和または不飽和の環状基、及び
任意選択により不飽和、ヘテロ原子または荷電基のうちの1つ以上を含んでよい線状または分岐状のアルキル基から独立して選択することができる)
を有する、請求項1に記載の組成物。 - R8、R9、R11及びR12のそれぞれが、水素であり、R10が、置換または無置換であってよく、任意選択によりヘテロ原子(例えば、窒素)、荷電基(例えば、荷電した窒素ヘテロ原子)またはその両方を含んでよい不飽和環状基である、請求項9に記載の組成物。
- 組成物の総重量に基づいて、約0.001〜約0.5重量%の前記カチオン性界面活性剤を含む、請求項1に記載の組成物。
- 組成物の総重量に基づいて、約0.01〜約2重量%の前記β−シクロデキストリンを含む、請求項1に記載の組成物。
- 前記β−シクロデキストリンと前記カチオン性界面活性剤とが会合したカチオン性界面活性剤−シクロデキストリン複合体を含む、請求項1に記載の組成物。
- 約0.001〜約0.5重量%の前記カチオン性界面活性剤−βシクロデキストリン複合体を含む、請求項13に記載の組成物。
- 前記研磨剤粒子が、pH1〜6の前記スラリー中で少なくとも6ミリボルト(mV)の正電荷を有するシリカ研磨剤粒子である、請求項1に記載の組成物。
- 前記シリカ研磨剤粒子の30%以上が、3つ以上の凝集した一次粒子を含む、請求項15に記載の組成物。
- 前記シリカ研磨剤粒子が、前記粒子中に組み込まれたカチオン性化合物を含み、前記カチオン性化合物が、荷電性窒素含有化合物または荷電性リン含有化合物である、請求項15に記載の組成物。
- 前記シリカ研磨剤粒子が少なくとも10ミリボルトの永久正電荷を有する、請求項15に記載の組成物。
- 前記シリカ研磨剤粒子が、約30〜約70ナノメートルの範囲の平均粒径を有する、請求項15に記載の組成物。
- 約1〜約4重量%の研磨剤粒子を含む、請求項1に記載の組成物。
- 約0.001〜約1重量%の阻害剤と、
約0.001〜約0.5重量%の触媒と
を更に含む、請求項1に記載の組成物。 - 前記触媒が可溶性鉄含有触媒である、請求項21に記載の組成物。
- 酸化剤を更に含む、請求項1に記載の組成物。
- タングステンを含む表面を含む基材を化学機械研磨する方法であって、
(a)前記基材を、
液体キャリアと、
前記液体キャリア中に分散されたシリカ研磨剤粒子であって、pH1〜6のスラリー中で少なくとも6ミリボルト(mV)の正電荷を有する前記粒子と、
α−シクロデキストリン、β−シクロデキストリンまたはγ−シクロデキストリンから選択されるシクロデキストリンと、
カチオンを有し、かつ前記カチオンから延びる疎水性末端を有するカチオン性界面活性剤であって、前記スラリー中で前記シクロデキストリンと複合体を形成することができる前記カチオン性界面活性剤とを含む研磨組成物と接触させることと、
(b)前記スラリーを前記基材に対して移動させることと、
(c)前記基材を削って前記タングステンの一部を前記基材から除去することと
を含む、前記方法。 - 前記カチオン性界面活性剤が、次の構造:
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1は、少なくとも7個の炭素原子を含有する、任意選択により置換され、任意選択により不飽和を含有する、直鎖または分岐鎖のアルキル基であり、
R2、R3及びR4は、
水素、
置換または無置換であってよく、任意選択によりヘテロ原子、荷電基またはその両方を含んでよい、飽和または不飽和の環状基、及び
任意選択により不飽和、ヘテロ原子または荷電基のうちの1つ以上を含んでよい線状または分岐状のアルキル基、ならびに
R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができる)
を有する、請求項24に記載の方法。 - 前記界面活性剤が、次式:
R1は、8〜20個の炭素原子を有するアルキル基であり、
各R3、R4、R5、R6及びR7は、独立して、1〜5個の炭素原子を有するアルキル基であり、
Zは、1〜5個の炭素原子を有する二価連結基である)
を有する、請求項25に記載の方法。 - 前記ジカチオン性界面活性剤がN,N,N’,N’,N’−ペンタメチル−N−タロー−1,3−プロパンジアンモニウムジクロリドである、請求項26に記載の方法。
- 前記研磨組成物が、
約0.001〜約1重量%の阻害剤と、
約0.001〜約0.5重量%の触媒と
を更に含む、請求項24に記載の方法。
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JP2009302255A (ja) * | 2008-06-12 | 2009-12-24 | Fujifilm Corp | 研磨液 |
JP2012033887A (ja) * | 2010-06-29 | 2012-02-16 | Hitachi Chem Co Ltd | Cmp研磨液及び研磨方法 |
WO2015143270A1 (en) * | 2014-03-21 | 2015-09-24 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
US20150267082A1 (en) * | 2014-03-24 | 2015-09-24 | Cabot Microelectronics Corporation | Mixed abrasive tungsten cmp composition |
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JP2019507207A (ja) * | 2015-12-29 | 2019-03-14 | キャボット マイクロエレクトロニクス コーポレイション | アルキルアミン及びシクロデキストリンを含むcmp処理組成物 |
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WO2017074800A1 (en) | 2017-05-04 |
CN108350318A (zh) | 2018-07-31 |
KR20180061388A (ko) | 2018-06-07 |
JP7148395B2 (ja) | 2022-10-05 |
JP2022028647A (ja) | 2022-02-16 |
EP3368623B1 (en) | 2022-11-30 |
US20170121560A1 (en) | 2017-05-04 |
US9771496B2 (en) | 2017-09-26 |
TW201725250A (zh) | 2017-07-16 |
EP3368623A4 (en) | 2019-06-12 |
EP3368623A1 (en) | 2018-09-05 |
TWI659078B (zh) | 2019-05-11 |
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