CN106133881B - 用于钨磨光的组合物 - Google Patents

用于钨磨光的组合物 Download PDF

Info

Publication number
CN106133881B
CN106133881B CN201580015491.XA CN201580015491A CN106133881B CN 106133881 B CN106133881 B CN 106133881B CN 201580015491 A CN201580015491 A CN 201580015491A CN 106133881 B CN106133881 B CN 106133881B
Authority
CN
China
Prior art keywords
composition
colloidal silica
acid
abrasive particles
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580015491.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN106133881A (zh
Inventor
富琳
J.戴萨德
S.格拉宾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN106133881A publication Critical patent/CN106133881A/zh
Application granted granted Critical
Publication of CN106133881B publication Critical patent/CN106133881B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/745—Iron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201580015491.XA 2014-03-21 2015-03-20 用于钨磨光的组合物 Active CN106133881B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/222,086 US9309442B2 (en) 2014-03-21 2014-03-21 Composition for tungsten buffing
US14/222,086 2014-03-21
PCT/US2015/021666 WO2015143270A1 (en) 2014-03-21 2015-03-20 Composition for tungsten buffing

Publications (2)

Publication Number Publication Date
CN106133881A CN106133881A (zh) 2016-11-16
CN106133881B true CN106133881B (zh) 2019-01-08

Family

ID=54141489

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580015491.XA Active CN106133881B (zh) 2014-03-21 2015-03-20 用于钨磨光的组合物

Country Status (7)

Country Link
US (1) US9309442B2 (https=)
EP (1) EP3120380B1 (https=)
JP (1) JP6616394B2 (https=)
KR (1) KR102390227B1 (https=)
CN (1) CN106133881B (https=)
TW (1) TWI535836B (https=)
WO (1) WO2015143270A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102464630B1 (ko) * 2014-06-25 2022-11-08 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 조성물
US10688623B2 (en) * 2014-09-30 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispersion system with real time control
JP2017061612A (ja) * 2015-09-25 2017-03-30 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US20190112196A1 (en) * 2016-03-30 2019-04-18 Fujimi Incorporated Cation-modified silica raw material dispersion
US10316218B2 (en) * 2017-08-30 2019-06-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
WO2019055749A1 (en) 2017-09-15 2019-03-21 Cabot Microelectronics Corporation COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING (CMP) OF TUNGSTEN
US10647887B2 (en) 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
TWI769619B (zh) 2020-01-07 2022-07-01 美商Ｃｍｃ材料股份有限公司 經衍生的聚胺基酸
KR20210095465A (ko) 2020-01-23 2021-08-02 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
CN111593350A (zh) * 2020-06-18 2020-08-28 周家勤 一种铝合金镜面化学抛光液及其抛光方法
KR102531445B1 (ko) * 2020-10-28 2023-05-12 주식회사 케이씨텍 연마 슬러리 조성물
KR102782549B1 (ko) * 2021-08-23 2025-03-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR20250059910A (ko) * 2023-10-25 2025-05-07 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1166805A (zh) * 1994-10-06 1997-12-03 卡伯特公司 金属层用的化学机械抛光淤浆
US20050155296A1 (en) * 2004-01-16 2005-07-21 Siddiqui Junaid A. Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US20080149591A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing
US20080287038A1 (en) * 2007-05-18 2008-11-20 Nippon Chemical Industrial Co., Ltd. Polishing composition for semiconductor wafer, method for production thereof and polishing method
US20090246957A1 (en) * 2008-03-27 2009-10-01 Fujifilm Corporation Polishing liquid and polishing method
CN101802116A (zh) * 2007-09-21 2010-08-11 卡伯特微电子公司 利用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法
US20110318929A1 (en) * 2010-06-29 2011-12-29 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP3810588B2 (ja) 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
US6582623B1 (en) 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
US6334880B1 (en) 1999-12-07 2002-01-01 Silbond Corporation Abrasive media and aqueous slurries for chemical mechanical polishing and planarization
TWI296006B (https=) * 2000-02-09 2008-04-21 Jsr Corp
US6646348B1 (en) 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
JP4435391B2 (ja) 2000-08-04 2010-03-17 扶桑化学工業株式会社 コロイド状シリカスラリー
DE10065027A1 (de) 2000-12-23 2002-07-04 Degussa Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung
US6656241B1 (en) 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
TW591089B (en) 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
DE10164262A1 (de) 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7056449B2 (en) 2002-08-14 2006-06-06 Rohm And Haas Company Aqueous silica dispersion
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
WO2004100242A1 (ja) 2003-05-09 2004-11-18 Sanyo Chemical Industries, Ltd. Cmpプロセス用研磨液及び研磨方法
US8309615B2 (en) 2003-08-04 2012-11-13 Rohm And Haas Company Aqueous silica dispersion
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7022255B2 (en) 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US20060124592A1 (en) 2004-12-09 2006-06-15 Miller Anne E Chemical mechanical polish slurry
SG160384A1 (en) * 2004-12-13 2010-04-29 Planar Solutions Llc Colloidal silica based chemical mechanical polishing slurry
KR101332302B1 (ko) 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
US20070075042A1 (en) 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
KR20070088245A (ko) 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
US8163049B2 (en) 2006-04-18 2012-04-24 Dupont Air Products Nanomaterials Llc Fluoride-modified silica sols for chemical mechanical planarization
US8961677B2 (en) 2006-04-26 2015-02-24 Silbond Corporation Suspension of nanoparticles and method for making the same
US7585340B2 (en) 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
WO2007146680A1 (en) 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
JP4836731B2 (ja) 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
KR101059677B1 (ko) 2006-07-31 2011-08-25 후소카가쿠코교 가부시키가이샤 실리카 졸 및 그 제조 방법
JP2008117807A (ja) * 2006-10-31 2008-05-22 Fujimi Inc 研磨用組成物及び研磨方法
US7691287B2 (en) 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
JP5322455B2 (ja) 2007-02-26 2013-10-23 富士フイルム株式会社 研磨液及び研磨方法
CN102690607B (zh) * 2007-02-27 2015-02-11 日立化成株式会社 金属用研磨液及其应用
US9550683B2 (en) 2007-03-27 2017-01-24 Fuso Chemical Co., Ltd. Colloidal silica, and method for production thereof
US7915071B2 (en) 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
EP2197972B1 (en) 2007-09-21 2020-04-01 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
DE102008008184A1 (de) * 2008-02-08 2009-08-13 Evonik Degussa Gmbh Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion
TWI522450B (zh) * 2008-04-16 2016-02-21 日立化成股份有限公司 Ｃｍｐ用硏磨液以及硏磨方法
RU2469837C2 (ru) 2008-04-18 2012-12-20 Сэнт-Гобэн Эбрейзивс, Инк. Абразивные зерна, модифицированные гидрофильным и гидрофобным силаном, и способ их образования
MY150487A (en) 2008-09-19 2014-01-30 Cabot Microelectronics Corp Barrier slurry for low-k dielectrics.
JP5312887B2 (ja) * 2008-09-24 2013-10-09 富士フイルム株式会社 研磨液
WO2010035613A1 (ja) * 2008-09-26 2010-04-01 扶桑化学工業株式会社 屈曲構造及び／又は分岐構造を持つシリカ二次粒子を含有するコロイダルシリカ及びその製造方法
TW201038690A (en) 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
EP2389417B1 (en) 2009-01-20 2017-03-15 Cabot Corporation Compositons comprising silane modified metal oxides
US8119529B2 (en) 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
SG176255A1 (en) 2009-08-19 2012-01-30 Hitachi Chemical Co Ltd Polishing solution for cmp and polishing method
JP2011216582A (ja) 2010-03-31 2011-10-27 Fujifilm Corp 研磨方法、および研磨液
KR101243331B1 (ko) 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
JP5844135B2 (ja) * 2010-12-24 2016-01-13 花王株式会社 研磨液組成物の製造方法
US8366059B2 (en) 2011-01-06 2013-02-05 GM Global Technology Operations LLC Position controlled cable guide clip
EP2952550A4 (en) * 2013-02-01 2016-09-28 Fujimi Inc SURFACE LENS POLISHING COMPOSITION

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1166805A (zh) * 1994-10-06 1997-12-03 卡伯特公司 金属层用的化学机械抛光淤浆
US20050155296A1 (en) * 2004-01-16 2005-07-21 Siddiqui Junaid A. Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US20080149591A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing
US20080287038A1 (en) * 2007-05-18 2008-11-20 Nippon Chemical Industrial Co., Ltd. Polishing composition for semiconductor wafer, method for production thereof and polishing method
CN101802116A (zh) * 2007-09-21 2010-08-11 卡伯特微电子公司 利用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法
US20090246957A1 (en) * 2008-03-27 2009-10-01 Fujifilm Corporation Polishing liquid and polishing method
US20110318929A1 (en) * 2010-06-29 2011-12-29 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method

Also Published As

Publication number Publication date
EP3120380A4 (en) 2017-12-13
JP6616394B2 (ja) 2019-12-04
CN106133881A (zh) 2016-11-16
KR20160135767A (ko) 2016-11-28
WO2015143270A1 (en) 2015-09-24
JP2017517900A (ja) 2017-06-29
TW201546252A (zh) 2015-12-16
EP3120380A1 (en) 2017-01-25
US20150267081A1 (en) 2015-09-24
US9309442B2 (en) 2016-04-12
KR102390227B1 (ko) 2022-04-25
TWI535836B (zh) 2016-06-01
EP3120380B1 (en) 2019-03-06

Similar Documents

Publication Publication Date Title
CN106133881B (zh) 用于钨磨光的组合物
KR102408747B1 (ko) 혼합 마모제 텅스텐 cmp 조성물
KR102390111B1 (ko) 혼합 마모제 텅스텐 cmp 조성물
JP7270611B2 (ja) タングステンｃｍｐ用組成物
JP7148395B2 (ja) タングステン含有表面を処理するのに有用な化学機械研磨組成物及びタングステンを含む表面を含む基材を化学機械研磨する方法
JP6612789B2 (ja) タングステンの化学機械研磨組成物
KR102774705B1 (ko) 양이온성 계면활성제를 함유하는 텅스텐-가공 슬러리
JP6625997B2 (ja) タングステンｃｍｐ用の組成物
CN108473849B (zh) 具有催化剂的加工钨的浆料
KR102482166B1 (ko) 텅스텐 cmp용 조성물
TWI648386B (zh) 鎢化學機械拋光（ｃｍｐ）之組合物
JP2019206718A (ja) 銅バリアの化学機械研磨組成物
CN120153037A (zh) 包含含硫阴离子表面活性剂的钨化学机械抛光(cmp)组合物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, USA

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, USA

Patentee before: Cabot Microelectronics Corp.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, America

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, America

Patentee before: CMC Materials Co.,Ltd.