KR102386941B1 - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기 Download PDF

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Publication number
KR102386941B1
KR102386941B1 KR1020167022090A KR20167022090A KR102386941B1 KR 102386941 B1 KR102386941 B1 KR 102386941B1 KR 1020167022090 A KR1020167022090 A KR 1020167022090A KR 20167022090 A KR20167022090 A KR 20167022090A KR 102386941 B1 KR102386941 B1 KR 102386941B1
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transistor
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imaging device
solid
state imaging
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KR20160127730A (ko
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나나코 카토
토시후미 와카노
유스케 오타케
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소니그룹주식회사
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    • H01L27/14641
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H01L27/14603
    • H01L27/14609
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H04N5/357
    • H04N5/37457
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/813Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020167022090A 2014-02-28 2015-02-20 촬상 장치 및 전자 기기 Active KR102386941B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227007266A KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014038584A JP6334203B2 (ja) 2014-02-28 2014-02-28 固体撮像装置、および電子機器
JPJP-P-2014-038584 2014-02-28
PCT/JP2015/000821 WO2015129226A1 (en) 2014-02-28 2015-02-20 Imaging device and electronic apparatus

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KR20160127730A KR20160127730A (ko) 2016-11-04
KR102386941B1 true KR102386941B1 (ko) 2022-04-15

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KR1020167022090A Active KR102386941B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020237002324A Active KR102675995B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020247019601A Active KR102828652B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020227007266A Active KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

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KR1020237002324A Active KR102675995B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020247019601A Active KR102828652B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020227007266A Active KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

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US (4) US10075659B2 (enExample)
EP (2) EP3518518B1 (enExample)
JP (1) JP6334203B2 (enExample)
KR (4) KR102386941B1 (enExample)
CN (2) CN111312736B (enExample)
TW (1) TWI653891B (enExample)
WO (1) WO2015129226A1 (enExample)

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Publication number Publication date
US10075659B2 (en) 2018-09-11
US20230247317A1 (en) 2023-08-03
CN111312736B (zh) 2023-10-24
EP3111631B1 (en) 2019-04-03
KR20220034926A (ko) 2022-03-18
KR20160127730A (ko) 2016-11-04
CN106030804B (zh) 2020-03-20
US20190007631A1 (en) 2019-01-03
TWI653891B (zh) 2019-03-11
KR102675995B1 (ko) 2024-06-18
US20170013211A1 (en) 2017-01-12
KR102828652B1 (ko) 2025-07-04
CN106030804A (zh) 2016-10-12
EP3518518B1 (en) 2020-08-12
KR102492853B1 (ko) 2023-01-31
KR20230019213A (ko) 2023-02-07
TW201534121A (zh) 2015-09-01
US12096142B2 (en) 2024-09-17
EP3111631A1 (en) 2017-01-04
WO2015129226A1 (en) 2015-09-03
US11044428B2 (en) 2021-06-22
JP2015162646A (ja) 2015-09-07
KR20240096885A (ko) 2024-06-26
US11683601B2 (en) 2023-06-20
US20200366856A1 (en) 2020-11-19
CN111312736A (zh) 2020-06-19
EP3518518A1 (en) 2019-07-31
JP6334203B2 (ja) 2018-05-30

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