CN111312736B - 成像装置和电子设备 - Google Patents

成像装置和电子设备 Download PDF

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Publication number
CN111312736B
CN111312736B CN202010118252.XA CN202010118252A CN111312736B CN 111312736 B CN111312736 B CN 111312736B CN 202010118252 A CN202010118252 A CN 202010118252A CN 111312736 B CN111312736 B CN 111312736B
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China
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transistor
unit
group
pixel
imaging device
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Chinese (zh)
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CN111312736A (zh
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加藤菜菜子
若野寿史
大竹悠介
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202010118252.XA 2014-02-28 2015-02-20 成像装置和电子设备 Active CN111312736B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010118252.XA CN111312736B (zh) 2014-02-28 2015-02-20 成像装置和电子设备

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014038584A JP6334203B2 (ja) 2014-02-28 2014-02-28 固体撮像装置、および電子機器
JP2014-038584 2014-02-28
PCT/JP2015/000821 WO2015129226A1 (en) 2014-02-28 2015-02-20 Imaging device and electronic apparatus
CN201580009596.4A CN106030804B (zh) 2014-02-28 2015-02-20 成像装置和电子设备
CN202010118252.XA CN111312736B (zh) 2014-02-28 2015-02-20 成像装置和电子设备

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CN201580009596.4A Division CN106030804B (zh) 2014-02-28 2015-02-20 成像装置和电子设备

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CN111312736A CN111312736A (zh) 2020-06-19
CN111312736B true CN111312736B (zh) 2023-10-24

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US (4) US10075659B2 (enExample)
EP (2) EP3518518B1 (enExample)
JP (1) JP6334203B2 (enExample)
KR (4) KR102386941B1 (enExample)
CN (2) CN111312736B (enExample)
TW (1) TWI653891B (enExample)
WO (1) WO2015129226A1 (enExample)

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KR102701855B1 (ko) * 2016-12-28 2024-09-02 삼성전자주식회사 이미지 센서
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KR102568744B1 (ko) * 2018-01-29 2023-08-22 에스케이하이닉스 주식회사 이미지 센서
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JP7086783B2 (ja) 2018-08-13 2022-06-20 株式会社東芝 固体撮像装置
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CN114697579B (zh) * 2020-12-31 2024-11-12 思特威(上海)电子科技股份有限公司 应用于自动对焦的共享像素结构及图像传感器件
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Also Published As

Publication number Publication date
US10075659B2 (en) 2018-09-11
US20230247317A1 (en) 2023-08-03
EP3111631B1 (en) 2019-04-03
KR20220034926A (ko) 2022-03-18
KR20160127730A (ko) 2016-11-04
CN106030804B (zh) 2020-03-20
US20190007631A1 (en) 2019-01-03
TWI653891B (zh) 2019-03-11
KR102675995B1 (ko) 2024-06-18
US20170013211A1 (en) 2017-01-12
KR102828652B1 (ko) 2025-07-04
CN106030804A (zh) 2016-10-12
EP3518518B1 (en) 2020-08-12
KR102492853B1 (ko) 2023-01-31
KR20230019213A (ko) 2023-02-07
TW201534121A (zh) 2015-09-01
US12096142B2 (en) 2024-09-17
EP3111631A1 (en) 2017-01-04
WO2015129226A1 (en) 2015-09-03
US11044428B2 (en) 2021-06-22
JP2015162646A (ja) 2015-09-07
KR20240096885A (ko) 2024-06-26
US11683601B2 (en) 2023-06-20
US20200366856A1 (en) 2020-11-19
CN111312736A (zh) 2020-06-19
EP3518518A1 (en) 2019-07-31
KR102386941B1 (ko) 2022-04-15
JP6334203B2 (ja) 2018-05-30

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