KR102376017B1 - 보호막 형성용 시트 및 보호막이 형성된 반도체 칩의 제조 방법 - Google Patents
보호막 형성용 시트 및 보호막이 형성된 반도체 칩의 제조 방법 Download PDFInfo
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Images
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Oil, Petroleum & Natural Gas (AREA)
- Dicing (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Adhesive Tapes (AREA)
- Laser Beam Processing (AREA)
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2014169266 | 2014-08-22 | ||
JP2014169267 | 2014-08-22 | ||
JPJP-P-2014-169267 | 2014-08-22 | ||
JPJP-P-2014-169266 | 2014-08-22 | ||
PCT/JP2015/073503 WO2016027883A1 (fr) | 2014-08-22 | 2015-08-21 | Feuille pour formation de membrane protectrice, et procédé de fabrication de puce semi-conductrice avec membrane protectrice |
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KR20170044108A KR20170044108A (ko) | 2017-04-24 |
KR102376017B1 true KR102376017B1 (ko) | 2022-03-17 |
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KR1020177004497A KR102368140B1 (ko) | 2014-08-22 | 2015-08-21 | 보호막 형성용 시트 및 보호막이 형성된 반도체 칩의 제조 방법 |
KR1020177004494A KR102376017B1 (ko) | 2014-08-22 | 2015-08-21 | 보호막 형성용 시트 및 보호막이 형성된 반도체 칩의 제조 방법 |
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KR1020177004497A KR102368140B1 (ko) | 2014-08-22 | 2015-08-21 | 보호막 형성용 시트 및 보호막이 형성된 반도체 칩의 제조 방법 |
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JP (2) | JPWO2016027888A1 (fr) |
KR (2) | KR102368140B1 (fr) |
CN (2) | CN106660333B (fr) |
MY (2) | MY186759A (fr) |
PH (2) | PH12017500284A1 (fr) |
SG (2) | SG11201701270QA (fr) |
TW (4) | TWI712670B (fr) |
WO (2) | WO2016027888A1 (fr) |
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Publication number | Priority date | Publication date | Assignee | Title |
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SG11201803325QA (en) * | 2015-10-29 | 2018-05-30 | Lintec Corp | Film for protective film formation and composite sheet for protective film formation |
WO2017149890A1 (fr) * | 2016-03-04 | 2017-09-08 | リンテック株式会社 | Feuille composite pour formation de membrane protectrice |
WO2017149926A1 (fr) * | 2016-03-04 | 2017-09-08 | リンテック株式会社 | Feuille de traitement de semi-conducteur |
KR20180122316A (ko) * | 2016-03-04 | 2018-11-12 | 린텍 가부시키가이샤 | 반도체 가공용 시트 |
JP6573841B2 (ja) * | 2016-03-04 | 2019-09-11 | リンテック株式会社 | 半導体加工用シート |
KR102516392B1 (ko) * | 2016-03-04 | 2023-03-30 | 린텍 가부시키가이샤 | 보호막 형성용 복합 시트 |
JP6617056B2 (ja) * | 2016-03-04 | 2019-12-04 | リンテック株式会社 | 半導体加工用シート、その巻取体および当該巻取体の製造方法 |
TWI721158B (zh) * | 2016-04-28 | 2021-03-11 | 日商琳得科股份有限公司 | 保護膜形成用膜及保護膜形成用複合片 |
TWI778960B (zh) * | 2016-04-28 | 2022-10-01 | 日商琳得科股份有限公司 | 保護膜形成用膜、保護膜形成用複合片、以及附有保護膜的半導體晶片之製造方法 |
TWI796297B (zh) * | 2016-04-28 | 2023-03-21 | 日商琳得科股份有限公司 | 保護膜形成用複合片 |
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JPWO2016027888A1 (ja) | 2017-06-01 |
TW201614024A (en) | 2016-04-16 |
KR20170044108A (ko) | 2017-04-24 |
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PH12017500285A1 (en) | 2017-06-28 |
TW201938728A (zh) | 2019-10-01 |
SG11201701270QA (en) | 2017-03-30 |
MY186759A (en) | 2021-08-18 |
KR20170044652A (ko) | 2017-04-25 |
TWI706023B (zh) | 2020-10-01 |
WO2016027883A1 (fr) | 2016-02-25 |
PH12017500284B1 (en) | 2017-07-03 |
PH12017500285B1 (en) | 2017-06-28 |
CN106660333B (zh) | 2018-11-06 |
CN106660332B (zh) | 2020-08-07 |
MY182846A (en) | 2021-02-05 |
TW201614023A (en) | 2016-04-16 |
CN106660333A (zh) | 2017-05-10 |
WO2016027888A1 (fr) | 2016-02-25 |
TWI668290B (zh) | 2019-08-11 |
TWI712670B (zh) | 2020-12-11 |
JPWO2016027883A1 (ja) | 2017-06-01 |
TWI672354B (zh) | 2019-09-21 |
KR102368140B1 (ko) | 2022-02-25 |
PH12017500284A1 (en) | 2017-07-03 |
JP6589209B2 (ja) | 2019-10-16 |
CN106660332A (zh) | 2017-05-10 |
SG11201701272UA (en) | 2017-04-27 |
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