KR102369398B1 - 고체 촬상 장치 및 그 구동 방법, 및 전자 기기 - Google Patents

고체 촬상 장치 및 그 구동 방법, 및 전자 기기 Download PDF

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KR102369398B1
KR102369398B1 KR1020157030922A KR20157030922A KR102369398B1 KR 102369398 B1 KR102369398 B1 KR 102369398B1 KR 1020157030922 A KR1020157030922 A KR 1020157030922A KR 20157030922 A KR20157030922 A KR 20157030922A KR 102369398 B1 KR102369398 B1 KR 102369398B1
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pixel
photoelectric conversion
charge
charge holding
transistor
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KR20160132342A (ko
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카츠히코 한자와
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소니그룹주식회사
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    • H01L27/14641—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H01L27/14612—
    • H01L27/14627—
    • H01L27/14636—
    • H01L27/1464—
    • H01L27/14643—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N5/3745—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Automatic Focus Adjustment (AREA)
KR1020157030922A 2014-03-17 2015-03-04 고체 촬상 장치 및 그 구동 방법, 및 전자 기기 Active KR102369398B1 (ko)

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KR1020227005598A KR102542664B1 (ko) 2014-03-17 2015-03-04 고체 촬상 장치 및 그 구동 방법, 및 전자 기기

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JP2014053667A JP6075646B2 (ja) 2014-03-17 2014-03-17 固体撮像装置およびその駆動方法、並びに電子機器
JPJP-P-2014-053667 2014-03-17
PCT/JP2015/001142 WO2015141161A1 (en) 2014-03-17 2015-03-04 Solid-state imaging device, driving method therefor, and electronic apparatus

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KR102369398B1 true KR102369398B1 (ko) 2022-03-04

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KR1020227005598A Active KR102542664B1 (ko) 2014-03-17 2015-03-04 고체 촬상 장치 및 그 구동 방법, 및 전자 기기

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US (1) US10403672B2 (enExample)
JP (1) JP6075646B2 (enExample)
KR (2) KR102369398B1 (enExample)
CN (1) CN105210363B (enExample)
TW (1) TWI653892B (enExample)
WO (1) WO2015141161A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6588702B2 (ja) * 2015-01-05 2019-10-09 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体
JP5897752B1 (ja) 2015-05-14 2016-03-30 ブリルニクスジャパン株式会社 固体撮像装置およびその駆動方法、電子機器
KR20170019581A (ko) * 2015-08-12 2017-02-22 삼성전자주식회사 지문 감지 센서, 이를 포함하는 전자 장치 및 지문 감지 센서의 동작 방법
JP6663209B2 (ja) * 2015-11-30 2020-03-11 キヤノン株式会社 撮像装置、撮像システム及び撮像装置の駆動方法
JP6746301B2 (ja) * 2015-11-30 2020-08-26 キヤノン株式会社 撮像装置の駆動方法、撮像装置、撮像システム
JP6600246B2 (ja) * 2015-12-17 2019-10-30 キヤノン株式会社 撮像装置及びカメラ
EP3313069B1 (en) 2015-12-18 2020-12-16 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image sensor, control method, and electronic device
JP2017142356A (ja) 2016-02-10 2017-08-17 ソニー株式会社 撮像装置、および、撮像装置の制御方法
CN114007024A (zh) * 2016-02-29 2022-02-01 株式会社尼康 摄像元件及摄像装置
US9936150B2 (en) * 2016-03-17 2018-04-03 Semiconductor Components Industries, Llc Image sensors with a rolling shutter scanning mode and high dynamic range
JP2017184075A (ja) 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子および撮像装置
EP4451336A3 (en) * 2016-05-24 2025-05-28 Sony Group Corporation Solid-state image pickup device and image pickup apparatus
JP6765859B2 (ja) 2016-05-31 2020-10-07 キヤノン株式会社 撮像装置、およびその制御方法
KR102246424B1 (ko) 2016-05-31 2021-04-30 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 촬상 방법, 카메라 모듈, 및 전자 기기
JP6688165B2 (ja) * 2016-06-10 2020-04-28 キヤノン株式会社 撮像装置及び撮像システム
JP6778595B2 (ja) * 2016-08-17 2020-11-04 ルネサスエレクトロニクス株式会社 撮像素子
US10038863B2 (en) * 2016-08-17 2018-07-31 Renesas Electronics Corporation Image sensing device
JP6804140B2 (ja) * 2016-09-02 2020-12-23 東芝情報システム株式会社 固体撮像素子
JP6667431B2 (ja) 2016-12-27 2020-03-18 キヤノン株式会社 撮像装置、撮像システム
JP6769349B2 (ja) * 2017-03-03 2020-10-14 株式会社リコー 固体撮像素子及び撮像装置
JP6951423B2 (ja) * 2017-03-31 2021-10-20 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP2019050522A (ja) 2017-09-11 2019-03-28 キヤノン株式会社 撮像装置
US11258993B2 (en) 2017-11-22 2022-02-22 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
JP7013973B2 (ja) * 2018-03-19 2022-02-01 株式会社リコー 固体撮像素子及び撮像装置
WO2019189892A1 (ja) * 2018-03-30 2019-10-03 株式会社ニコン 撮像素子および撮像装置
WO2019229835A1 (ja) * 2018-05-29 2019-12-05 オリンパス株式会社 固体撮像装置および撮像システム
JP2020047734A (ja) * 2018-09-18 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US10890482B2 (en) 2019-01-18 2021-01-12 Himax Imaging Limited Pixel circuit for generating an output signal in response to incident radiation
US11381768B2 (en) * 2019-05-07 2022-07-05 Samsung Electronics Co., Ltd. Image sensor with pixels including photodiodes sharing floating diffusion region
KR102714983B1 (ko) * 2019-05-07 2024-10-10 삼성전자주식회사 복수의 포토 다이오드들을 포함하는 픽셀을 포함하는 이미지 센서
TWI868145B (zh) 2019-05-31 2025-01-01 日商索尼半導體解決方案公司 固體攝像裝置
TWI857128B (zh) * 2019-09-06 2024-10-01 日商索尼股份有限公司 攝像元件及攝像裝置
JP7516033B2 (ja) * 2019-12-02 2024-07-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US12495219B2 (en) 2020-09-18 2025-12-09 Samsung Electronics Co., Ltd. Image sensor
US11653110B2 (en) 2020-09-18 2023-05-16 Samsung Electronics Co., Ltd. Image sensor
US20220116557A1 (en) * 2020-10-08 2022-04-14 Samsung Electronics Co., Ltd. Pixel array and image sensor including the same
KR20220169592A (ko) * 2021-06-21 2022-12-28 삼성전자주식회사 이미지 센싱 장치
US20240340554A1 (en) * 2021-08-24 2024-10-10 Sony Semiconductor Solutions Corporation Imaging device
FR3129526B1 (fr) * 2021-11-25 2023-11-24 St Microelectronics Crolles 2 Sas Capteur d'image
WO2024106196A1 (ja) * 2022-11-16 2024-05-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001083407A (ja) * 1999-09-13 2001-03-30 Canon Inc 撮像装置
JP2001250931A (ja) * 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP2013172210A (ja) * 2012-02-17 2013-09-02 Canon Inc 撮像装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002043381A (ja) * 2000-07-19 2002-02-08 Tokyo Electron Ltd ウエハ温度制御装置
US6521881B2 (en) * 2001-04-16 2003-02-18 Kingpak Technology Inc. Stacked structure of an image sensor and method for manufacturing the same
JP4506467B2 (ja) * 2003-02-20 2010-07-21 日本精工株式会社 電動式パワーステアリング装置用アシスト装置及び電動式パワーステアリング装置
US7705900B2 (en) * 2005-06-01 2010-04-27 Eastman Kodak Company CMOS image sensor pixel with selectable binning and conversion gain
CN101213829A (zh) 2005-06-01 2008-07-02 伊斯曼柯达公司 具有可选择装仓的cmos图像传感器像素
US7613157B2 (en) * 2005-08-30 2009-11-03 Interdigital Technology Corporation Wireless communication method and apparatus for processing enhanced uplink scheduling grants
JP4710660B2 (ja) 2006-03-10 2011-06-29 株式会社ニコン 固体撮像素子及びこれを用いた電子カメラ
AU2008275873B2 (en) * 2007-07-19 2013-06-06 Disney Enterprises, Inc. Methods and apparatus for multiple texture map storage and filtering
KR20090090776A (ko) * 2008-02-22 2009-08-26 삼성전자주식회사 이미지 센서 및 그 제조 방법
US7777171B2 (en) * 2008-08-26 2010-08-17 Eastman Kodak Company In-pixel summing of charge generated by two or more pixels having two reset transistors connected in series
US8913166B2 (en) * 2009-01-21 2014-12-16 Canon Kabushiki Kaisha Solid-state imaging apparatus
JP5359465B2 (ja) * 2009-03-31 2013-12-04 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理方法および撮像装置
JP5511541B2 (ja) * 2010-06-24 2014-06-04 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
US20130018215A1 (en) * 2011-01-18 2013-01-17 Merit Medical Systems, Inc. Esophageal stent and methods for use of same
JP5839807B2 (ja) 2011-02-09 2016-01-06 キヤノン株式会社 固体撮像装置の製造方法
JP5885403B2 (ja) * 2011-06-08 2016-03-15 キヤノン株式会社 撮像装置
JP6172888B2 (ja) * 2012-01-18 2017-08-02 キヤノン株式会社 撮像装置および撮像システム
JP2013157883A (ja) 2012-01-31 2013-08-15 Sony Corp 固体撮像素子およびカメラシステム
US9554115B2 (en) * 2012-02-27 2017-01-24 Semiconductor Components Industries, Llc Imaging pixels with depth sensing capabilities
JP2014049727A (ja) * 2012-09-04 2014-03-17 Canon Inc 固体撮像装置
JP6164867B2 (ja) * 2013-02-21 2017-07-19 キヤノン株式会社 固体撮像装置、その制御方法、および制御プログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001083407A (ja) * 1999-09-13 2001-03-30 Canon Inc 撮像装置
JP2001250931A (ja) * 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP2013172210A (ja) * 2012-02-17 2013-09-02 Canon Inc 撮像装置

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KR20220025945A (ko) 2022-03-03
CN105210363A (zh) 2015-12-30
TW201537983A (zh) 2015-10-01
US20160141326A1 (en) 2016-05-19
CN105210363B (zh) 2019-08-09
US10403672B2 (en) 2019-09-03
JP6075646B2 (ja) 2017-02-08
KR20160132342A (ko) 2016-11-18
JP2015177429A (ja) 2015-10-05
TWI653892B (zh) 2019-03-11
WO2015141161A1 (en) 2015-09-24
KR102542664B1 (ko) 2023-06-14

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