KR102366646B1 - 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법 - Google Patents

마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR102366646B1
KR102366646B1 KR1020217011252A KR20217011252A KR102366646B1 KR 102366646 B1 KR102366646 B1 KR 102366646B1 KR 1020217011252 A KR1020217011252 A KR 1020217011252A KR 20217011252 A KR20217011252 A KR 20217011252A KR 102366646 B1 KR102366646 B1 KR 102366646B1
Authority
KR
South Korea
Prior art keywords
light
film
pattern
mask
shielding film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217011252A
Other languages
English (en)
Korean (ko)
Other versions
KR20210046823A (ko
Inventor
히로아끼 시시도
오사무 노자와
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20210046823A publication Critical patent/KR20210046823A/ko
Application granted granted Critical
Publication of KR102366646B1 publication Critical patent/KR102366646B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020217011252A 2014-03-30 2015-03-30 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법 Active KR102366646B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2014-070686 2014-03-30
JP2014070686 2014-03-30
PCT/JP2015/059855 WO2015152124A1 (ja) 2014-03-30 2015-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
KR1020167030016A KR102243419B1 (ko) 2014-03-30 2015-03-30 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167030016A Division KR102243419B1 (ko) 2014-03-30 2015-03-30 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20210046823A KR20210046823A (ko) 2021-04-28
KR102366646B1 true KR102366646B1 (ko) 2022-02-23

Family

ID=54240447

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020217011252A Active KR102366646B1 (ko) 2014-03-30 2015-03-30 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법
KR1020167030016A Active KR102243419B1 (ko) 2014-03-30 2015-03-30 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020167030016A Active KR102243419B1 (ko) 2014-03-30 2015-03-30 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (2) US10261409B2 (enExample)
JP (2) JP6292581B2 (enExample)
KR (2) KR102366646B1 (enExample)
TW (2) TWI673564B (enExample)
WO (1) WO2015152124A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6544943B2 (ja) * 2014-03-28 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法
JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6601245B2 (ja) * 2015-03-04 2019-11-06 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法
JP6608613B2 (ja) * 2015-05-12 2019-11-20 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法及び半導体装置の製造方法
JP6903878B2 (ja) * 2016-07-07 2021-07-14 凸版印刷株式会社 位相シフトマスクブランクおよび位相シフトマスク
SG11201901299SA (en) 2016-08-26 2019-03-28 Hoya Corp Mask blank, transfer mask, and method of manufacturing semiconductor device
JP6642493B2 (ja) * 2017-03-10 2020-02-05 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク
SG11201907839RA (en) * 2017-03-31 2019-10-30 Toppan Printing Co Ltd Phase shift mask blank, phase shift mask and manufacturing method for phase shift mask
US11048160B2 (en) * 2017-06-14 2021-06-29 Hoya Corporation Mask blank, phase shift mask and method for manufacturing semiconductor device
JP6753375B2 (ja) 2017-07-28 2020-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法
WO2020179463A1 (ja) * 2019-03-07 2020-09-10 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7044095B2 (ja) * 2019-05-31 2022-03-30 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7154626B2 (ja) * 2019-11-26 2022-10-18 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP7329033B2 (ja) 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JP7329031B2 (ja) 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
KR102444967B1 (ko) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크
KR102392332B1 (ko) * 2021-06-08 2022-04-28 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
CN117769682A (zh) * 2021-06-29 2024-03-26 豪雅株式会社 掩模坯料、相移掩模的制造方法及半导体器件的制造方法
KR102465982B1 (ko) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102435818B1 (ko) * 2021-09-03 2022-08-23 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102475672B1 (ko) * 2021-11-03 2022-12-07 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102537003B1 (ko) 2022-05-13 2023-05-26 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007033470A (ja) 2005-07-21 2007-02-08 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP2007241060A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスクの製造方法
JP2008304942A (ja) 2002-03-01 2008-12-18 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法
JP2013238776A (ja) 2012-05-16 2013-11-28 Shin Etsu Chem Co Ltd ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685751A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Photomask
JP2909317B2 (ja) * 1992-08-20 1999-06-23 三菱電機株式会社 フォトマスク
JP2001147516A (ja) * 2000-11-27 2001-05-29 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2003195479A (ja) * 2001-12-28 2003-07-09 Hoya Corp ハーフトーン型位相シフトマスクブランク、及びハーフトーン型位相シフトマスクの製造方法
US7166392B2 (en) 2002-03-01 2007-01-23 Hoya Corporation Halftone type phase shift mask blank and halftone type phase shift mask
WO2004059384A1 (ja) * 2002-12-26 2004-07-15 Hoya Corporation リソグラフィーマスクブランク
DE112004000591B4 (de) 2003-04-09 2020-09-10 Hoya Corp. Herstellungsverfahren für Photomaske
JP4443873B2 (ja) * 2003-08-15 2010-03-31 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
EP1746460B1 (en) 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
JP4989800B2 (ja) 2008-09-27 2012-08-01 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
US20110159411A1 (en) * 2009-12-30 2011-06-30 Bennett Olson Phase-shift photomask and patterning method
JP5704754B2 (ja) 2010-01-16 2015-04-22 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
JP5464186B2 (ja) * 2011-09-07 2014-04-09 信越化学工業株式会社 フォトマスクブランク、フォトマスク及びその製造方法
JP5286455B1 (ja) * 2012-03-23 2013-09-11 Ｈｏｙａ株式会社 マスクブランク、転写用マスクおよびこれらの製造方法
KR102190850B1 (ko) * 2012-11-08 2020-12-14 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
WO2014112409A1 (ja) * 2013-01-18 2014-07-24 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法及び転写用マスクの製造方法
WO2014127383A2 (en) 2013-02-17 2014-08-21 Zeliff Zachary Joseph Stylus for capacitive touchscreen
JP6101646B2 (ja) * 2013-02-26 2017-03-22 Hoya株式会社 位相シフトマスクブランク及びその製造方法、位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6150299B2 (ja) * 2014-03-30 2017-06-21 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008304942A (ja) 2002-03-01 2008-12-18 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法
JP2007033470A (ja) 2005-07-21 2007-02-08 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP2007241060A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスクの製造方法
JP2013238776A (ja) 2012-05-16 2013-11-28 Shin Etsu Chem Co Ltd ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法

Also Published As

Publication number Publication date
JP6571224B2 (ja) 2019-09-04
JP2015200883A (ja) 2015-11-12
TW201600921A (zh) 2016-01-01
US11231645B2 (en) 2022-01-25
TWI640826B (zh) 2018-11-11
WO2015152124A1 (ja) 2015-10-08
KR20210046823A (ko) 2021-04-28
US20190187550A1 (en) 2019-06-20
US20170139316A1 (en) 2017-05-18
JP2018087998A (ja) 2018-06-07
KR20160138242A (ko) 2016-12-02
KR102243419B1 (ko) 2021-04-21
TW201903513A (zh) 2019-01-16
US10261409B2 (en) 2019-04-16
JP6292581B2 (ja) 2018-03-14
TWI673564B (zh) 2019-10-01

Similar Documents

Publication Publication Date Title
KR102366646B1 (ko) 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법
KR102295453B1 (ko) 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법
KR102416957B1 (ko) 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
KR102291478B1 (ko) 마스크 블랭크, 위상 시프트 마스크의 제조 방법, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
KR101758838B1 (ko) 마스크 블랭크 및 전사용 마스크 그리고 그들의 제조방법
JP6084391B2 (ja) マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
KR102246172B1 (ko) 마스크 블랭크, 전사용 마스크 및 전사용 마스크의 제조 방법
WO2015146421A1 (ja) マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法
JP6608613B2 (ja) 位相シフトマスクブランク、位相シフトマスクの製造方法及び半導体装置の製造方法
JP6430585B2 (ja) マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 5