KR102330030B1 - 연마용 조성물, 연마용 조성물 제조 방법 및 연마용 조성물 조제용 키트 - Google Patents
연마용 조성물, 연마용 조성물 제조 방법 및 연마용 조성물 조제용 키트 Download PDFInfo
- Publication number
- KR102330030B1 KR102330030B1 KR1020157020585A KR20157020585A KR102330030B1 KR 102330030 B1 KR102330030 B1 KR 102330030B1 KR 1020157020585 A KR1020157020585 A KR 1020157020585A KR 20157020585 A KR20157020585 A KR 20157020585A KR 102330030 B1 KR102330030 B1 KR 102330030B1
- Authority
- KR
- South Korea
- Prior art keywords
- water
- polishing composition
- polishing
- soluble polymer
- agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/04—Acyclic compounds
- C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Composite Materials (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013057227 | 2013-03-19 | ||
| JP2013057226 | 2013-03-19 | ||
| JPJP-P-2013-057227 | 2013-03-19 | ||
| JPJP-P-2013-057228 | 2013-03-19 | ||
| JP2013057228 | 2013-03-19 | ||
| JPJP-P-2013-057226 | 2013-03-19 | ||
| JP2013057225 | 2013-03-19 | ||
| JPJP-P-2013-057225 | 2013-03-19 | ||
| PCT/JP2014/057008 WO2014148399A1 (ja) | 2013-03-19 | 2014-03-14 | 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150133694A KR20150133694A (ko) | 2015-11-30 |
| KR102330030B1 true KR102330030B1 (ko) | 2021-11-24 |
Family
ID=51580082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157020585A Active KR102330030B1 (ko) | 2013-03-19 | 2014-03-14 | 연마용 조성물, 연마용 조성물 제조 방법 및 연마용 조성물 조제용 키트 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10351732B2 (enExample) |
| EP (2) | EP3967736B1 (enExample) |
| JP (5) | JP5900913B2 (enExample) |
| KR (1) | KR102330030B1 (enExample) |
| CN (1) | CN105051145B (enExample) |
| SG (1) | SG11201507438YA (enExample) |
| TW (2) | TWI640586B (enExample) |
| WO (1) | WO2014148399A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3967736B1 (en) | 2013-03-19 | 2023-10-11 | Fujimi Incorporated | Polishing composition, method for producing polishing composition, and kit for preparing polishing composition |
| US10717899B2 (en) | 2013-03-19 | 2020-07-21 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
| JP6367113B2 (ja) * | 2014-12-25 | 2018-08-01 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
| JP6655354B2 (ja) * | 2014-12-26 | 2020-02-26 | 花王株式会社 | シリコンウェーハ用研磨液組成物、又はシリコンウェーハ用研磨液組成物キット |
| US10748778B2 (en) * | 2015-02-12 | 2020-08-18 | Fujimi Incorporated | Method for polishing silicon wafer and surface treatment composition |
| CN108138032B (zh) * | 2015-10-23 | 2021-02-12 | 霓达杜邦股份有限公司 | 研磨用组合物 |
| US10435588B2 (en) * | 2015-10-23 | 2019-10-08 | Nitta Haas Incorporated | Polishing composition |
| JP6801964B2 (ja) | 2016-01-19 | 2020-12-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びシリコン基板の研磨方法 |
| JP6572830B2 (ja) * | 2016-06-13 | 2019-09-11 | 信越半導体株式会社 | シリコンウェーハの搬送・保管方法 |
| JP7026043B2 (ja) * | 2016-08-02 | 2022-02-25 | 株式会社フジミインコーポレーテッド | シリコンウェーハ粗研磨用組成物の製造方法、シリコンウェーハ粗研磨用組成物セット、およびシリコンウェーハの研磨方法 |
| WO2018025655A1 (ja) * | 2016-08-02 | 2018-02-08 | 株式会社フジミインコーポレーテッド | シリコンウェーハ粗研磨用組成物の濃縮液 |
| KR102744174B1 (ko) * | 2016-08-31 | 2024-12-19 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 연마용 조성물 세트 |
| US10955332B2 (en) * | 2016-12-22 | 2021-03-23 | Illumina, Inc. | Flow cell package and method for making the same |
| CN110177853A (zh) * | 2017-02-20 | 2019-08-27 | 福吉米株式会社 | 硅基板中间研磨用组合物及硅基板研磨用组合物套组 |
| JP7074525B2 (ja) * | 2017-03-30 | 2022-05-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
| CN108499963A (zh) * | 2017-05-18 | 2018-09-07 | 苏州权素船舶电子有限公司 | 一种电子材料研磨清洗方法 |
| KR102685348B1 (ko) | 2017-11-06 | 2024-07-17 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 그의 제조 방법 |
| KR102647949B1 (ko) | 2017-11-16 | 2024-03-14 | 닛키 쇼쿠바이카세이 가부시키가이샤 | 실리카 입자의 분산액 및 그 제조 방법 |
| JP6929239B2 (ja) * | 2018-03-30 | 2021-09-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
| JP7221479B2 (ja) * | 2018-08-31 | 2023-02-14 | 日化精工株式会社 | ダイシング加工用製剤及び加工処理液 |
| KR102849199B1 (ko) * | 2019-03-26 | 2025-08-22 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| JP7384592B2 (ja) * | 2019-08-22 | 2023-11-21 | 株式会社三共 | 遊技機 |
| US11492512B2 (en) * | 2019-09-26 | 2022-11-08 | Fujimi Incorporated | Polishing composition and polishing method |
| JP6884898B1 (ja) * | 2020-01-22 | 2021-06-09 | 日本酢ビ・ポバール株式会社 | 研磨用組成物 |
| KR20220150963A (ko) * | 2020-03-13 | 2022-11-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 연마 방법 |
| JP7720137B2 (ja) * | 2020-09-30 | 2025-08-07 | 株式会社フジミインコーポレーテッド | ポリビニルアルコール組成物を含む半導体用濡れ剤の製造方法 |
| CN119301741A (zh) * | 2022-03-31 | 2025-01-10 | 福吉米株式会社 | 研磨用组合物 |
| TWI841000B (zh) | 2022-10-14 | 2024-05-01 | 財團法人工業技術研究院 | 懸浮磨料噴射流的加工方法及加工系統 |
| TWI878955B (zh) | 2023-07-05 | 2025-04-01 | 財團法人工業技術研究院 | 廢熱固性材料回收裝置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100663781B1 (ko) * | 2003-01-31 | 2007-01-02 | 히다치 가세고교 가부시끼가이샤 | Cμρ연마제 및 연마방법 |
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| DE2247067C3 (de) | 1972-09-26 | 1979-08-09 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen |
| JPS539910A (en) | 1976-07-14 | 1978-01-28 | Hitachi Ltd | Function generating circuit for gas turbine engine control |
| JP4115562B2 (ja) | 1997-10-14 | 2008-07-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JPH11140427A (ja) | 1997-11-13 | 1999-05-25 | Kobe Steel Ltd | 研磨液および研磨方法 |
| JP2003321671A (ja) * | 2002-04-30 | 2003-11-14 | Sumitomo Bakelite Co Ltd | 研磨用組成物 |
| JP2004067869A (ja) * | 2002-08-06 | 2004-03-04 | Sumitomo Bakelite Co Ltd | 研磨用組成物 |
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| US20060135045A1 (en) | 2004-12-17 | 2006-06-22 | Jinru Bian | Polishing compositions for reducing erosion in semiconductor wafers |
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| JP5335183B2 (ja) | 2006-08-24 | 2013-11-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| JP2009147267A (ja) * | 2007-12-18 | 2009-07-02 | Dai Ichi Kogyo Seiyaku Co Ltd | 化学機械研磨用研磨剤 |
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| JP2010274348A (ja) * | 2009-05-27 | 2010-12-09 | Nihon Micro Coating Co Ltd | 研磨フィルム及びこれを用いた研磨方法 |
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| JP2011171689A (ja) | 2009-07-07 | 2011-09-01 | Kao Corp | シリコンウエハ用研磨液組成物 |
| WO2011093223A1 (ja) * | 2010-01-29 | 2011-08-04 | 株式会社 フジミインコーポレーテッド | 半導体ウェーハの再生方法及び研磨用組成物 |
| WO2011111421A1 (ja) | 2010-03-12 | 2011-09-15 | 日立化成工業株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
| JP4772156B1 (ja) | 2010-07-05 | 2011-09-14 | 花王株式会社 | シリコンウエハ用研磨液組成物 |
| KR20130129400A (ko) | 2010-11-22 | 2013-11-28 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 |
| JP2013057227A (ja) | 2011-09-06 | 2013-03-28 | Takao Suzuki | 管渠等沈下測定小型マンホール設置工 |
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| JP2013057225A (ja) | 2011-09-07 | 2013-03-28 | Yanagisawa Concrete Kogyo Kk | アーチ甲蓋 |
| JP2013057228A (ja) | 2011-09-09 | 2013-03-28 | Hiroaki Matsuda | 排水口用ゴミ取り器 |
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| JP6044630B2 (ja) * | 2012-02-21 | 2016-12-14 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
| JP5822356B2 (ja) | 2012-04-17 | 2015-11-24 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
| US9133366B2 (en) | 2012-05-25 | 2015-09-15 | Nissan Chemical Industries, Ltd. | Polishing liquid composition for wafers |
| JP5927059B2 (ja) * | 2012-06-19 | 2016-05-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた基板の製造方法 |
| US20150376464A1 (en) | 2013-02-13 | 2015-12-31 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and method for producing polished article |
| EP3967736B1 (en) | 2013-03-19 | 2023-10-11 | Fujimi Incorporated | Polishing composition, method for producing polishing composition, and kit for preparing polishing composition |
-
2014
- 2014-03-14 EP EP21205576.8A patent/EP3967736B1/en active Active
- 2014-03-14 SG SG11201507438YA patent/SG11201507438YA/en unknown
- 2014-03-14 WO PCT/JP2014/057008 patent/WO2014148399A1/ja not_active Ceased
- 2014-03-14 JP JP2015506749A patent/JP5900913B2/ja active Active
- 2014-03-14 KR KR1020157020585A patent/KR102330030B1/ko active Active
- 2014-03-14 CN CN201480017289.6A patent/CN105051145B/zh active Active
- 2014-03-14 US US14/777,841 patent/US10351732B2/en not_active Expired - Fee Related
- 2014-03-14 EP EP14767647.2A patent/EP2977423B1/en active Active
- 2014-03-19 TW TW103110296A patent/TWI640586B/zh active
- 2014-03-19 TW TW107130386A patent/TWI665275B/zh active
-
2016
- 2016-03-01 JP JP2016038585A patent/JP6514653B2/ja active Active
- 2016-03-01 JP JP2016038586A patent/JP6513591B2/ja active Active
-
2019
- 2019-04-12 JP JP2019076438A patent/JP7246235B2/ja active Active
-
2022
- 2022-05-30 JP JP2022087516A patent/JP2022118024A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100663781B1 (ko) * | 2003-01-31 | 2007-01-02 | 히다치 가세고교 가부시끼가이샤 | Cμρ연마제 및 연마방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019151849A (ja) | 2019-09-12 |
| EP2977423A4 (en) | 2017-03-22 |
| CN105051145A (zh) | 2015-11-11 |
| JP6514653B2 (ja) | 2019-05-15 |
| JP2022118024A (ja) | 2022-08-12 |
| EP3967736A1 (en) | 2022-03-16 |
| TW201900795A (zh) | 2019-01-01 |
| EP3967736B1 (en) | 2023-10-11 |
| JP6513591B2 (ja) | 2019-05-15 |
| WO2014148399A1 (ja) | 2014-09-25 |
| TWI640586B (zh) | 2018-11-11 |
| CN105051145B (zh) | 2018-06-26 |
| TWI665275B (zh) | 2019-07-11 |
| JP7246235B2 (ja) | 2023-03-27 |
| JP5900913B2 (ja) | 2016-04-06 |
| JPWO2014148399A1 (ja) | 2017-02-16 |
| US10351732B2 (en) | 2019-07-16 |
| JP2016135882A (ja) | 2016-07-28 |
| JP2016166343A (ja) | 2016-09-15 |
| KR20150133694A (ko) | 2015-11-30 |
| SG11201507438YA (en) | 2015-10-29 |
| US20160272846A1 (en) | 2016-09-22 |
| EP2977423A1 (en) | 2016-01-27 |
| EP2977423B1 (en) | 2022-09-28 |
| TW201500492A (zh) | 2015-01-01 |
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Legal Events
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| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
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| P11-X000 | Amendment of application requested |
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