KR102289796B1 - 기판 액처리 장치 및 기판 액처리 방법 - Google Patents

기판 액처리 장치 및 기판 액처리 방법 Download PDF

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KR102289796B1
KR102289796B1 KR1020140154346A KR20140154346A KR102289796B1 KR 102289796 B1 KR102289796 B1 KR 102289796B1 KR 1020140154346 A KR1020140154346 A KR 1020140154346A KR 20140154346 A KR20140154346 A KR 20140154346A KR 102289796 B1 KR102289796 B1 KR 102289796B1
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concentration
liquid
processing liquid
processing
tank
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KR20150055561A (ko
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야스히로 다카키
히로시 고미야
치카라 노부쿠니
게이고 사타케
아츠시 아나모토
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도쿄엘렉트론가부시키가이샤
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Priority to KR1020210037157A priority Critical patent/KR102339333B1/ko
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D11/00Control of flow ratio
    • G05D11/02Controlling ratio of two or more flows of fluid or fluent material
    • G05D11/13Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
    • G05D11/135Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture
    • G05D11/138Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture by sensing the concentration of the mixture, e.g. measuring pH value
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Accessories For Mixers (AREA)
  • Weting (AREA)
KR1020140154346A 2013-11-13 2014-11-07 기판 액처리 장치 및 기판 액처리 방법 Active KR102289796B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210037157A KR102339333B1 (ko) 2013-11-13 2021-03-23 기판 액처리 장치 및 기판 액처리 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013235304 2013-11-13
JPJP-P-2013-235304 2013-11-13
JPJP-P-2014-205113 2014-10-03
JP2014205113A JP6352143B2 (ja) 2013-11-13 2014-10-03 基板液処理装置及び基板液処理方法

Related Child Applications (1)

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KR1020210037157A Division KR102339333B1 (ko) 2013-11-13 2021-03-23 기판 액처리 장치 및 기판 액처리 방법

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KR20150055561A KR20150055561A (ko) 2015-05-21
KR102289796B1 true KR102289796B1 (ko) 2021-08-12

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KR1020210037157A Active KR102339333B1 (ko) 2013-11-13 2021-03-23 기판 액처리 장치 및 기판 액처리 방법

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US (2) US10162371B2 (enExample)
JP (1) JP6352143B2 (enExample)
KR (2) KR102289796B1 (enExample)
CN (2) CN110197803B (enExample)
TW (1) TWI579037B (enExample)

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KR102612978B1 (ko) * 2022-08-02 2023-12-13 나가세 엔지니어링 서비스 코리아(주) 혼합 시스템

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JP2018110186A (ja) * 2017-01-04 2018-07-12 東京エレクトロン株式会社 液処理装置及び液処理方法
JP7004144B2 (ja) * 2017-10-25 2022-01-21 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP7049875B2 (ja) * 2018-03-22 2022-04-07 オルガノ株式会社 希釈液製造方法および希釈液製造装置
KR102087773B1 (ko) * 2018-07-13 2020-04-23 씨앤지하이테크 주식회사 액체 혼합 공급장치
JP7101083B2 (ja) * 2018-08-23 2022-07-14 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
CN110875212B (zh) * 2018-08-31 2022-07-01 辛耘企业股份有限公司 基板处理装置
KR102221258B1 (ko) 2018-09-27 2021-03-02 세메스 주식회사 약액 토출 장치
JP7265879B2 (ja) * 2019-02-14 2023-04-27 株式会社Screenホールディングス 基板乾燥方法および基板処理装置
CN111715134A (zh) * 2019-03-21 2020-09-29 长鑫存储技术有限公司 流体混合装置及其控制方法、刻蚀设备
JP2020175338A (ja) * 2019-04-19 2020-10-29 株式会社荏原製作所 機能水濃度制御システム、及び機能水濃度制御方法
CN110112085A (zh) * 2019-05-23 2019-08-09 德淮半导体有限公司 一种液体浓度控制装置
JP7264729B2 (ja) * 2019-05-31 2023-04-25 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP7393210B2 (ja) * 2019-06-28 2023-12-06 株式会社Screenホールディングス 基板処理方法および基板処理装置
JP7382164B2 (ja) * 2019-07-02 2023-11-16 東京エレクトロン株式会社 液処理装置および液処理方法
CN114026679A (zh) * 2019-07-03 2022-02-08 东京毅力科创株式会社 基片处理设备和处理液制备方法
CN110828338B (zh) * 2019-09-30 2022-08-09 长江存储科技有限责任公司 浓度的调节方法及调节系统
CN110808218B (zh) * 2019-10-23 2022-07-08 长江存储科技有限责任公司 一种处理液供应装置的控制方法及处理液供应装置
JP7504679B2 (ja) * 2020-06-30 2024-06-24 株式会社Screenホールディングス 基板処理装置、および、基板処理方法
JP7504018B2 (ja) * 2020-12-22 2024-06-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
JP7710315B2 (ja) * 2021-06-01 2025-07-18 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN114247684B (zh) * 2021-12-17 2023-04-14 北京北方华创微电子装备有限公司 供液系统和半导体清洗系统
JP7630458B2 (ja) * 2022-03-10 2025-02-17 芝浦メカトロニクス株式会社 処理液供給装置、基板処理装置及び処理液供給方法
CN115145319B (zh) * 2022-05-30 2025-04-04 北京华丞电子有限公司 压力控制方法、装置及半导体工艺设备
WO2025022988A1 (ja) * 2023-07-21 2025-01-30 東京エレクトロン株式会社 処理液供給装置及び処理液調整方法

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JP2003158111A (ja) * 2001-11-19 2003-05-30 Kaijo Corp 半導体処理装置の薬液濃度制御装置
US20090141583A1 (en) 2006-10-12 2009-06-04 Air Liquide Electronics Us Lp Reclaim Function for Semiconductor Processing Systems
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US20110023912A1 (en) 2009-07-31 2011-02-03 Tokyo Electron Limited Liquid processing apparatus, liquid processing method, and recording medium having program stored therein
JP2011125857A (ja) 2009-12-15 2011-06-30 Hilti Ag スタティック・ミキサ
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102612978B1 (ko) * 2022-08-02 2023-12-13 나가세 엔지니어링 서비스 코리아(주) 혼합 시스템
KR102628134B1 (ko) * 2022-08-02 2024-01-24 나가세 엔지니어링 서비스 코리아(주) 혼합 시스템
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TWI889591B (zh) * 2022-08-02 2025-07-01 南韓商長瀨工程服務(韓國)股份有限公司 混合系統

Also Published As

Publication number Publication date
CN104637841A (zh) 2015-05-20
CN104637841B (zh) 2019-06-11
KR20150055561A (ko) 2015-05-21
TW201531331A (zh) 2015-08-16
CN110197803A (zh) 2019-09-03
TWI579037B (zh) 2017-04-21
US20150131403A1 (en) 2015-05-14
US20190079544A1 (en) 2019-03-14
CN110197803B (zh) 2023-07-28
JP2015119168A (ja) 2015-06-25
US10591935B2 (en) 2020-03-17
KR102339333B1 (ko) 2021-12-13
KR20210037641A (ko) 2021-04-06
US10162371B2 (en) 2018-12-25
JP6352143B2 (ja) 2018-07-04

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