CN110197803B - 基板液处理装置和基板液处理方法 - Google Patents
基板液处理装置和基板液处理方法 Download PDFInfo
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- CN110197803B CN110197803B CN201910418261.8A CN201910418261A CN110197803B CN 110197803 B CN110197803 B CN 110197803B CN 201910418261 A CN201910418261 A CN 201910418261A CN 110197803 B CN110197803 B CN 110197803B
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- 239000007788 liquid Substances 0.000 title claims abstract description 556
- 238000012545 processing Methods 0.000 title claims abstract description 183
- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 51
- 239000002994 raw material Substances 0.000 claims abstract description 30
- 230000007246 mechanism Effects 0.000 claims abstract description 10
- 230000001186 cumulative effect Effects 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 57
- 239000003085 diluting agent Substances 0.000 claims description 37
- 238000012544 monitoring process Methods 0.000 claims description 23
- 238000004364 calculation method Methods 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 6
- 230000003068 static effect Effects 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 239000003814 drug Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 description 49
- 239000000126 substance Substances 0.000 description 40
- 238000012937 correction Methods 0.000 description 15
- 238000001514 detection method Methods 0.000 description 10
- 230000001276 controlling effect Effects 0.000 description 9
- 239000012530 fluid Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 230000001105 regulatory effect Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
- G05D11/135—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture
- G05D11/138—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture by sensing the concentration of the mixture, e.g. measuring pH value
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Automation & Control Theory (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Accessories For Mixers (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910418261.8A CN110197803B (zh) | 2013-11-13 | 2014-11-13 | 基板液处理装置和基板液处理方法 |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-235304 | 2013-11-13 | ||
| JP2013235304 | 2013-11-13 | ||
| JP2014-205113 | 2014-10-03 | ||
| JP2014205113A JP6352143B2 (ja) | 2013-11-13 | 2014-10-03 | 基板液処理装置及び基板液処理方法 |
| CN201410641579.XA CN104637841B (zh) | 2013-11-13 | 2014-11-13 | 基板液处理装置和基板液处理方法 |
| CN201910418261.8A CN110197803B (zh) | 2013-11-13 | 2014-11-13 | 基板液处理装置和基板液处理方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410641579.XA Division CN104637841B (zh) | 2013-11-13 | 2014-11-13 | 基板液处理装置和基板液处理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110197803A CN110197803A (zh) | 2019-09-03 |
| CN110197803B true CN110197803B (zh) | 2023-07-28 |
Family
ID=53043703
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910418261.8A Active CN110197803B (zh) | 2013-11-13 | 2014-11-13 | 基板液处理装置和基板液处理方法 |
| CN201410641579.XA Active CN104637841B (zh) | 2013-11-13 | 2014-11-13 | 基板液处理装置和基板液处理方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410641579.XA Active CN104637841B (zh) | 2013-11-13 | 2014-11-13 | 基板液处理装置和基板液处理方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10162371B2 (enExample) |
| JP (1) | JP6352143B2 (enExample) |
| KR (2) | KR102289796B1 (enExample) |
| CN (2) | CN110197803B (enExample) |
| TW (1) | TWI579037B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3183391B1 (en) * | 2014-08-19 | 2020-02-12 | Russell, Atlas James | System and method for producing asphalt mix |
| JP2018110186A (ja) * | 2017-01-04 | 2018-07-12 | 東京エレクトロン株式会社 | 液処理装置及び液処理方法 |
| JP7004144B2 (ja) * | 2017-10-25 | 2022-01-21 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP7049875B2 (ja) * | 2018-03-22 | 2022-04-07 | オルガノ株式会社 | 希釈液製造方法および希釈液製造装置 |
| KR102087773B1 (ko) * | 2018-07-13 | 2020-04-23 | 씨앤지하이테크 주식회사 | 액체 혼합 공급장치 |
| JP7101083B2 (ja) * | 2018-08-23 | 2022-07-14 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
| CN110875212B (zh) * | 2018-08-31 | 2022-07-01 | 辛耘企业股份有限公司 | 基板处理装置 |
| KR102221258B1 (ko) | 2018-09-27 | 2021-03-02 | 세메스 주식회사 | 약액 토출 장치 |
| JP7265879B2 (ja) * | 2019-02-14 | 2023-04-27 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板乾燥方法および基板処理装置 |
| CN111715134A (zh) * | 2019-03-21 | 2020-09-29 | 长鑫存储技术有限公司 | 流体混合装置及其控制方法、刻蚀设备 |
| JP2020175338A (ja) * | 2019-04-19 | 2020-10-29 | 株式会社荏原製作所 | 機能水濃度制御システム、及び機能水濃度制御方法 |
| CN110112085A (zh) * | 2019-05-23 | 2019-08-09 | 德淮半导体有限公司 | 一种液体浓度控制装置 |
| JP7264729B2 (ja) * | 2019-05-31 | 2023-04-25 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP7393210B2 (ja) * | 2019-06-28 | 2023-12-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7382164B2 (ja) * | 2019-07-02 | 2023-11-16 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
| CN114026679A (zh) * | 2019-07-03 | 2022-02-08 | 东京毅力科创株式会社 | 基片处理设备和处理液制备方法 |
| CN110828338B (zh) * | 2019-09-30 | 2022-08-09 | 长江存储科技有限责任公司 | 浓度的调节方法及调节系统 |
| CN110808218B (zh) * | 2019-10-23 | 2022-07-08 | 长江存储科技有限责任公司 | 一种处理液供应装置的控制方法及处理液供应装置 |
| JP7504679B2 (ja) * | 2020-06-30 | 2024-06-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置、および、基板処理方法 |
| JP7504018B2 (ja) * | 2020-12-22 | 2024-06-21 | 東京エレクトロン株式会社 | 基板処理方法、及び基板処理装置 |
| JP7710315B2 (ja) * | 2021-06-01 | 2025-07-18 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| CN114247684B (zh) * | 2021-12-17 | 2023-04-14 | 北京北方华创微电子装备有限公司 | 供液系统和半导体清洗系统 |
| JP7630458B2 (ja) * | 2022-03-10 | 2025-02-17 | 芝浦メカトロニクス株式会社 | 処理液供給装置、基板処理装置及び処理液供給方法 |
| CN115145319B (zh) * | 2022-05-30 | 2025-04-04 | 北京华丞电子有限公司 | 压力控制方法、装置及半导体工艺设备 |
| KR102612978B1 (ko) * | 2022-08-02 | 2023-12-13 | 나가세 엔지니어링 서비스 코리아(주) | 혼합 시스템 |
| WO2025022988A1 (ja) * | 2023-07-21 | 2025-01-30 | 東京エレクトロン株式会社 | 処理液供給装置及び処理液調整方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001284313A (ja) * | 2000-03-29 | 2001-10-12 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP2002154057A (ja) * | 2000-11-17 | 2002-05-28 | Rion Co Ltd | 研磨液の供給装置 |
| CN1373393A (zh) * | 2001-02-06 | 2002-10-09 | 长濑产业株式会社 | 显影液制造装置及显影液制造方法 |
| JP2008244310A (ja) * | 2007-03-28 | 2008-10-09 | Kurita Water Ind Ltd | 洗浄液製造方法および洗浄液供給装置ならびに洗浄システム |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2815270A (en) * | 1945-07-11 | 1957-12-03 | Aerojet General Co | Fuel |
| JP3537975B2 (ja) | 1996-11-22 | 2004-06-14 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| US7344297B2 (en) | 1998-04-16 | 2008-03-18 | Air Liquide Electronics U.S. Lp | Method and apparatus for asynchronous blending and supply of chemical solutions |
| JP3610044B2 (ja) * | 2001-02-06 | 2005-01-12 | 株式会社平間理化研究所 | 現像液製造装置及び現像液製造方法 |
| JP3747174B2 (ja) * | 2001-11-19 | 2006-02-22 | 株式会社カイジョー | 半導体処理装置の薬液濃度制御装置 |
| CN100359642C (zh) * | 2003-04-24 | 2008-01-02 | 株式会社海上 | 半导体处理装置的药液浓度控制装置 |
| JP2007049022A (ja) * | 2005-08-11 | 2007-02-22 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
| US8235580B2 (en) * | 2006-10-12 | 2012-08-07 | Air Liquide Electronics U.S. Lp | Reclaim function for semiconductor processing systems |
| WO2008074058A1 (en) * | 2006-12-21 | 2008-06-26 | Resmed Ltd | A connector |
| US20090014158A1 (en) * | 2007-07-12 | 2009-01-15 | Honeywell International Inc. | Nano shower for chip-scale cooling |
| JP5043696B2 (ja) * | 2008-01-21 | 2012-10-10 | 東京エレクトロン株式会社 | 処理液混合装置、基板処理装置および処理液混合方法並びに記憶媒体 |
| WO2010016448A1 (ja) | 2008-08-07 | 2010-02-11 | 旭有機材工業株式会社 | 流体混合器及び流体混合器を用いた装置 |
| JP5448521B2 (ja) * | 2009-03-27 | 2014-03-19 | 大日本スクリーン製造株式会社 | 処理液供給装置および処理液供給方法 |
| JP5474666B2 (ja) * | 2009-07-31 | 2014-04-16 | 東京エレクトロン株式会社 | 液処理装置、液処理方法、プログラムおよびプログラム記録媒体 |
| DE102009054652A1 (de) * | 2009-12-15 | 2011-06-16 | Hilti Aktiengesellschaft | Statischer Mischer |
| JP5828726B2 (ja) * | 2011-09-27 | 2015-12-09 | サンスター株式会社 | 液体混合装置 |
| JP5858770B2 (ja) * | 2011-12-19 | 2016-02-10 | 芝浦メカトロニクス株式会社 | 基板処理システム |
| JP2013187401A (ja) * | 2012-03-08 | 2013-09-19 | Dainippon Screen Mfg Co Ltd | 基板処理装置及び基板処理方法 |
| KR20150086318A (ko) * | 2012-11-16 | 2015-07-27 | 인테그리스 - 제탈론 솔루션즈, 인크. | 혼합 농도 제어 |
| US9042197B2 (en) * | 2013-07-23 | 2015-05-26 | Western Digital Technologies, Inc. | Power fail protection and recovery using low power states in a data storage device/system |
-
2014
- 2014-10-03 JP JP2014205113A patent/JP6352143B2/ja active Active
- 2014-11-05 TW TW103138346A patent/TWI579037B/zh active
- 2014-11-07 KR KR1020140154346A patent/KR102289796B1/ko active Active
- 2014-11-10 US US14/536,989 patent/US10162371B2/en active Active
- 2014-11-13 CN CN201910418261.8A patent/CN110197803B/zh active Active
- 2014-11-13 CN CN201410641579.XA patent/CN104637841B/zh active Active
-
2018
- 2018-11-13 US US16/188,525 patent/US10591935B2/en active Active
-
2021
- 2021-03-23 KR KR1020210037157A patent/KR102339333B1/ko active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001284313A (ja) * | 2000-03-29 | 2001-10-12 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP2002154057A (ja) * | 2000-11-17 | 2002-05-28 | Rion Co Ltd | 研磨液の供給装置 |
| CN1373393A (zh) * | 2001-02-06 | 2002-10-09 | 长濑产业株式会社 | 显影液制造装置及显影液制造方法 |
| JP2008244310A (ja) * | 2007-03-28 | 2008-10-09 | Kurita Water Ind Ltd | 洗浄液製造方法および洗浄液供給装置ならびに洗浄システム |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104637841A (zh) | 2015-05-20 |
| CN104637841B (zh) | 2019-06-11 |
| KR20150055561A (ko) | 2015-05-21 |
| TW201531331A (zh) | 2015-08-16 |
| CN110197803A (zh) | 2019-09-03 |
| TWI579037B (zh) | 2017-04-21 |
| US20150131403A1 (en) | 2015-05-14 |
| US20190079544A1 (en) | 2019-03-14 |
| JP2015119168A (ja) | 2015-06-25 |
| US10591935B2 (en) | 2020-03-17 |
| KR102339333B1 (ko) | 2021-12-13 |
| KR20210037641A (ko) | 2021-04-06 |
| KR102289796B1 (ko) | 2021-08-12 |
| US10162371B2 (en) | 2018-12-25 |
| JP6352143B2 (ja) | 2018-07-04 |
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