KR102282264B1 - 웨이퍼의 가공 방법 - Google Patents

웨이퍼의 가공 방법 Download PDF

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Publication number
KR102282264B1
KR102282264B1 KR1020170076706A KR20170076706A KR102282264B1 KR 102282264 B1 KR102282264 B1 KR 102282264B1 KR 1020170076706 A KR1020170076706 A KR 1020170076706A KR 20170076706 A KR20170076706 A KR 20170076706A KR 102282264 B1 KR102282264 B1 KR 102282264B1
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KR
South Korea
Prior art keywords
wafer
cutting groove
cutting
laser beam
processing
Prior art date
Application number
KR1020170076706A
Other languages
English (en)
Korean (ko)
Other versions
KR20180000306A (ko
Inventor
도시오 츠치야
도시유키 요시카와
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20180000306A publication Critical patent/KR20180000306A/ko
Application granted granted Critical
Publication of KR102282264B1 publication Critical patent/KR102282264B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
KR1020170076706A 2016-06-22 2017-06-16 웨이퍼의 가공 방법 KR102282264B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016123793A JP6696842B2 (ja) 2016-06-22 2016-06-22 ウェーハの加工方法
JPJP-P-2016-123793 2016-06-22

Publications (2)

Publication Number Publication Date
KR20180000306A KR20180000306A (ko) 2018-01-02
KR102282264B1 true KR102282264B1 (ko) 2021-07-26

Family

ID=60748658

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170076706A KR102282264B1 (ko) 2016-06-22 2017-06-16 웨이퍼의 가공 방법

Country Status (4)

Country Link
JP (1) JP6696842B2 (ja)
KR (1) KR102282264B1 (ja)
CN (1) CN107527829B (ja)
TW (1) TWI713741B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI820177B (zh) * 2018-09-26 2023-11-01 日商三星鑽石工業股份有限公司 附有金屬膜之基板的分割方法
JP2022177326A (ja) * 2019-08-27 2022-12-01 ローム株式会社 半導体素子、および半導体素子の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150537A (ja) 2003-11-18 2005-06-09 Disco Abrasive Syst Ltd 板状物の加工方法および加工装置
JP2009302440A (ja) 2008-06-17 2009-12-24 Disco Abrasive Syst Ltd 切削装置
JP2011151299A (ja) 2010-01-25 2011-08-04 Disco Abrasive Syst Ltd レーザー加工方法
JP2014165246A (ja) * 2013-02-22 2014-09-08 Disco Abrasive Syst Ltd ウエーハの加工方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168655A (ja) * 2001-12-03 2003-06-13 Tokyo Seimitsu Co Ltd ダイシング装置
JP2008170366A (ja) * 2007-01-15 2008-07-24 Disco Abrasive Syst Ltd チャックテーブルに保持された被加工物の計測装置およびレーザー加工機
JP5801046B2 (ja) 2010-12-06 2015-10-28 株式会社ディスコ 板状物の加工方法
JP5980504B2 (ja) * 2011-12-27 2016-08-31 株式会社ディスコ ウエーハの加工方法およびレーザー加工装置
JP5896760B2 (ja) * 2012-01-30 2016-03-30 株式会社ディスコ 加工装置、及び、加工方法
JP6148075B2 (ja) * 2013-05-31 2017-06-14 株式会社ディスコ レーザー加工装置
JP6066854B2 (ja) * 2013-07-30 2017-01-25 株式会社ディスコ ウエーハの加工方法
JP6305013B2 (ja) * 2013-10-28 2018-04-04 株式会社ディスコ 加工装置
JP6325279B2 (ja) * 2014-02-21 2018-05-16 株式会社ディスコ ウエーハの加工方法
JP6285784B2 (ja) * 2014-04-09 2018-02-28 株式会社ディスコ 高さ位置検出装置
JP6328513B2 (ja) * 2014-07-28 2018-05-23 株式会社ディスコ ウエーハの加工方法
JP2016082162A (ja) * 2014-10-21 2016-05-16 株式会社ディスコ ウエーハの加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150537A (ja) 2003-11-18 2005-06-09 Disco Abrasive Syst Ltd 板状物の加工方法および加工装置
JP2009302440A (ja) 2008-06-17 2009-12-24 Disco Abrasive Syst Ltd 切削装置
JP2011151299A (ja) 2010-01-25 2011-08-04 Disco Abrasive Syst Ltd レーザー加工方法
JP2014165246A (ja) * 2013-02-22 2014-09-08 Disco Abrasive Syst Ltd ウエーハの加工方法

Also Published As

Publication number Publication date
CN107527829A (zh) 2017-12-29
TWI713741B (zh) 2020-12-21
KR20180000306A (ko) 2018-01-02
JP6696842B2 (ja) 2020-05-20
TW201808509A (zh) 2018-03-16
JP2017228651A (ja) 2017-12-28
CN107527829B (zh) 2023-06-16

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