KR102264352B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents
기판 처리 장치 및 기판 처리 방법 Download PDFInfo
- Publication number
- KR102264352B1 KR102264352B1 KR1020197018515A KR20197018515A KR102264352B1 KR 102264352 B1 KR102264352 B1 KR 102264352B1 KR 1020197018515 A KR1020197018515 A KR 1020197018515A KR 20197018515 A KR20197018515 A KR 20197018515A KR 102264352 B1 KR102264352 B1 KR 102264352B1
- Authority
- KR
- South Korea
- Prior art keywords
- liquid
- substrate
- processing liquid
- processing
- liquid column
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 348
- 238000003672 processing method Methods 0.000 title claims description 7
- 239000007788 liquid Substances 0.000 claims abstract description 878
- 238000007599 discharging Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 55
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000005192 partition Methods 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 76
- 238000004140 cleaning Methods 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 230000035939 shock Effects 0.000 description 19
- 239000012530 fluid Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000005507 spraying Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 2
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017005292A JP6940281B2 (ja) | 2017-01-16 | 2017-01-16 | 基板処理装置および基板処理方法 |
JPJP-P-2017-005292 | 2017-01-16 | ||
PCT/JP2017/046095 WO2018131428A1 (ja) | 2017-01-16 | 2017-12-22 | 基板処理装置および基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190085129A KR20190085129A (ko) | 2019-07-17 |
KR102264352B1 true KR102264352B1 (ko) | 2021-06-11 |
Family
ID=62839486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020197018515A KR102264352B1 (ko) | 2017-01-16 | 2017-12-22 | 기판 처리 장치 및 기판 처리 방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6940281B2 (ja) |
KR (1) | KR102264352B1 (ja) |
CN (1) | CN110140198B (ja) |
TW (1) | TWI666070B (ja) |
WO (1) | WO2018131428A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11219930B2 (en) | 2018-05-28 | 2022-01-11 | Nagase Filter Co, Ltd. | Filter cleaning method and filter cleaning apparatus |
GB201815163D0 (en) | 2018-09-18 | 2018-10-31 | Lam Res Ag | Wafer washing method and apparatus |
TWI691358B (zh) * | 2019-03-04 | 2020-04-21 | 日商長瀨過濾器股份有限公司 | 過濾器洗淨方法及過濾器洗淨裝置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001162239A (ja) * | 1999-12-09 | 2001-06-19 | Matsushita Electronics Industry Corp | 超音波洗浄装置 |
JP2016136599A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000000533A (ja) * | 1998-06-15 | 2000-01-07 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法及び基板洗浄ノズル並びに基板洗浄装置 |
JP2000021834A (ja) * | 1998-06-26 | 2000-01-21 | Sony Corp | 高速ジェット超純水洗浄方法及びその装置 |
JP2000061362A (ja) * | 1998-08-18 | 2000-02-29 | Dainippon Screen Mfg Co Ltd | 基板処理装置の処理液吐出ノズル |
TW472296B (en) * | 1999-05-25 | 2002-01-11 | Ebara Corp | Substrate treating apparatus and method of operating the same |
JP4638402B2 (ja) * | 2006-10-30 | 2011-02-23 | 大日本スクリーン製造株式会社 | 二流体ノズル、ならびにそれを用いた基板処理装置および基板処理方法 |
EP2270838B1 (en) * | 2009-07-02 | 2019-06-12 | IMEC vzw | Method and apparatus for controlling optimal operation of acoustic cleaning |
JP2011121009A (ja) * | 2009-12-11 | 2011-06-23 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5852898B2 (ja) | 2011-03-28 | 2016-02-03 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2014110404A (ja) * | 2012-12-04 | 2014-06-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5980704B2 (ja) * | 2013-03-15 | 2016-08-31 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
US20140261572A1 (en) * | 2013-03-15 | 2014-09-18 | Dainippon Screen Mfg.Co., Ltd. | Substrate treatment apparatus and substrate treatment method |
JP6320762B2 (ja) * | 2014-01-15 | 2018-05-09 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
CN110060925B (zh) * | 2014-03-28 | 2023-02-17 | 株式会社斯库林集团 | 基板处理方法 |
JP6509577B2 (ja) * | 2015-02-16 | 2019-05-08 | 株式会社Screenホールディングス | 基板処理装置 |
CN106252258B (zh) * | 2015-06-15 | 2018-12-07 | 株式会社思可林集团 | 基板处理装置 |
JP6402071B2 (ja) * | 2015-06-15 | 2018-10-10 | 株式会社Screenホールディングス | 基板処理装置 |
-
2017
- 2017-01-16 JP JP2017005292A patent/JP6940281B2/ja active Active
- 2017-12-22 KR KR1020197018515A patent/KR102264352B1/ko active IP Right Grant
- 2017-12-22 CN CN201780082037.5A patent/CN110140198B/zh active Active
- 2017-12-22 WO PCT/JP2017/046095 patent/WO2018131428A1/ja active Application Filing
- 2017-12-27 TW TW106146018A patent/TWI666070B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001162239A (ja) * | 1999-12-09 | 2001-06-19 | Matsushita Electronics Industry Corp | 超音波洗浄装置 |
JP2016136599A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2018131428A1 (ja) | 2018-07-19 |
KR20190085129A (ko) | 2019-07-17 |
CN110140198A (zh) | 2019-08-16 |
TWI666070B (zh) | 2019-07-21 |
JP2018116977A (ja) | 2018-07-26 |
TW201831237A (zh) | 2018-09-01 |
CN110140198B (zh) | 2023-03-21 |
JP6940281B2 (ja) | 2021-09-22 |
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