KR102257529B1 - 정전 척 및 정전 척 장치 - Google Patents

정전 척 및 정전 척 장치 Download PDF

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Publication number
KR102257529B1
KR102257529B1 KR1020190066936A KR20190066936A KR102257529B1 KR 102257529 B1 KR102257529 B1 KR 102257529B1 KR 1020190066936 A KR1020190066936 A KR 1020190066936A KR 20190066936 A KR20190066936 A KR 20190066936A KR 102257529 B1 KR102257529 B1 KR 102257529B1
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KR
South Korea
Prior art keywords
electrostatic chuck
dielectric plate
plate
electrode
base plate
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KR1020190066936A
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English (en)
Korean (ko)
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KR20200089584A (ko
Inventor
이상기
모리야 요시아키
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세메스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H01L21/6833—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H01L21/67103—
    • H01L21/67109—
    • H01L21/67248—
    • H01L21/6835—
    • H01L21/6838—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020190066936A 2019-01-16 2019-06-05 정전 척 및 정전 척 장치 Active KR102257529B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019005052A JP7430489B2 (ja) 2019-01-16 2019-01-16 静電チャック、静電チャック装置
JPJP-P-2019-005052 2019-01-16

Publications (2)

Publication Number Publication Date
KR20200089584A KR20200089584A (ko) 2020-07-27
KR102257529B1 true KR102257529B1 (ko) 2021-06-01

Family

ID=71516817

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190066936A Active KR102257529B1 (ko) 2019-01-16 2019-06-05 정전 척 및 정전 척 장치

Country Status (4)

Country Link
US (1) US11367646B2 (https=)
JP (1) JP7430489B2 (https=)
KR (1) KR102257529B1 (https=)
CN (1) CN111446197B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6798640B2 (ja) * 2018-03-23 2020-12-09 住友大阪セメント株式会社 静電チャック装置および静電チャック装置の製造方法
CN116325476A (zh) * 2020-10-21 2023-06-23 住友大阪水泥股份有限公司 陶瓷接合体、静电卡盘装置及陶瓷接合体的制造方法
WO2023076359A1 (en) 2021-10-28 2023-05-04 Entegris, Inc. Electrostatic chuck that includes upper ceramic layer that includes a dielectric layer, and related methods and structures
CN117637572A (zh) * 2022-08-12 2024-03-01 中微半导体设备(上海)股份有限公司 一种电压正负连续可调的静电夹盘及其装置和方法
KR102651394B1 (ko) * 2022-10-19 2024-03-29 엘지디스플레이 주식회사 대면적 디스플레이 제조를 위한 수평 고정형 유기 증착 장비용 기판 처리 장치
JP2024097250A (ja) * 2023-01-05 2024-07-18 東京エレクトロン株式会社 静電チャック、基板処理装置、および静電チャックの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110772A (ja) 2000-09-28 2002-04-12 Kyocera Corp 電極内蔵セラミックス及びその製造方法
JP2002305237A (ja) 2001-04-05 2002-10-18 Hitachi Ltd 半導体製造方法および製造装置
KR100748924B1 (ko) 2005-03-24 2007-08-14 니뽄 가이시 가부시키가이샤 정전 척 및 그 제조 방법
KR101452245B1 (ko) 2012-08-29 2014-10-22 토토 가부시키가이샤 정전척

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291175A (ja) * 1993-04-01 1994-10-18 Kyocera Corp 静電チャック
JPH0982788A (ja) 1995-07-10 1997-03-28 Anelva Corp 静電チャックおよびその製造方法
JP3486108B2 (ja) * 1998-06-30 2004-01-13 株式会社東芝 電力用抵抗体、その製造方法および電力用抵抗器
US6509568B1 (en) * 1998-11-02 2003-01-21 Advantest Corporation Electrostatic deflector for electron beam exposure apparatus
JP2001308053A (ja) * 2000-04-26 2001-11-02 Okamoto Machine Tool Works Ltd 銅スカム付着電極または銅配線を有する基板の洗浄方法
JP2002170871A (ja) 2000-12-04 2002-06-14 Kyocera Corp 静電チャック
JP2002170872A (ja) 2000-12-04 2002-06-14 Kyocera Corp 静電チャック
US6660665B2 (en) 2002-05-01 2003-12-09 Japan Fine Ceramics Center Platen for electrostatic wafer clamping apparatus
JP4034145B2 (ja) * 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
WO2009035002A1 (ja) 2007-09-11 2009-03-19 Canon Anelva Corporation 静電チャック
TWI475594B (zh) * 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
CN100560261C (zh) * 2008-05-29 2009-11-18 吉林大学 具有跟踪电极的半导陶瓷回转表面放电磨削加工装置
JP5189928B2 (ja) * 2008-08-18 2013-04-24 日本碍子株式会社 セラミックス部材の作成方法及び静電チャック
KR20100090561A (ko) * 2009-02-06 2010-08-16 이지스코 주식회사 이종 물질 간 접합구조를 갖는 정전척 및 그 제조방법
KR20100137679A (ko) * 2009-06-23 2010-12-31 이지스코 주식회사 글라스 정전척 및 그 제조방법
US9209061B2 (en) * 2011-09-28 2015-12-08 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
JP6182082B2 (ja) 2013-03-15 2017-08-16 日本碍子株式会社 緻密質複合材料、その製法及び半導体製造装置用部材
WO2015013142A1 (en) * 2013-07-22 2015-01-29 Applied Materials, Inc. An electrostatic chuck for high temperature process applications
US10068790B2 (en) 2014-09-30 2018-09-04 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
KR102790292B1 (ko) 2016-01-27 2025-04-04 스미토모 오사카 세멘토 가부시키가이샤 세라믹스 재료, 정전 척 장치
JP6627647B2 (ja) * 2016-05-24 2020-01-08 Tdk株式会社 積層膜、電子デバイス基板、電子デバイス及び積層膜の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110772A (ja) 2000-09-28 2002-04-12 Kyocera Corp 電極内蔵セラミックス及びその製造方法
JP2002305237A (ja) 2001-04-05 2002-10-18 Hitachi Ltd 半導体製造方法および製造装置
KR100748924B1 (ko) 2005-03-24 2007-08-14 니뽄 가이시 가부시키가이샤 정전 척 및 그 제조 방법
KR101452245B1 (ko) 2012-08-29 2014-10-22 토토 가부시키가이샤 정전척

Also Published As

Publication number Publication date
CN111446197A (zh) 2020-07-24
JP2020113692A (ja) 2020-07-27
JP7430489B2 (ja) 2024-02-13
CN111446197B (zh) 2023-07-07
US20200227300A1 (en) 2020-07-16
KR20200089584A (ko) 2020-07-27
US11367646B2 (en) 2022-06-21

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