KR102252945B1 - 워크의 평면 연삭 방법 - Google Patents

워크의 평면 연삭 방법 Download PDF

Info

Publication number
KR102252945B1
KR102252945B1 KR1020150026470A KR20150026470A KR102252945B1 KR 102252945 B1 KR102252945 B1 KR 102252945B1 KR 1020150026470 A KR1020150026470 A KR 1020150026470A KR 20150026470 A KR20150026470 A KR 20150026470A KR 102252945 B1 KR102252945 B1 KR 102252945B1
Authority
KR
South Korea
Prior art keywords
work
grindstone
grinding
slurry
circumferential speed
Prior art date
Application number
KR1020150026470A
Other languages
English (en)
Korean (ko)
Other versions
KR20150100577A (ko
Inventor
하루유키 히라야마
가즈히로 유소우
Original Assignee
고요 기카이 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고요 기카이 고교 가부시키가이샤 filed Critical 고요 기카이 고교 가부시키가이샤
Publication of KR20150100577A publication Critical patent/KR20150100577A/ko
Application granted granted Critical
Publication of KR102252945B1 publication Critical patent/KR102252945B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/013—Application of loose grinding agent as auxiliary tool during truing operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/036—Manufacturing methods by patterning a pre-deposited material
    • H01L2224/03602—Mechanical treatment, e.g. polishing, grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020150026470A 2014-02-25 2015-02-25 워크의 평면 연삭 방법 KR102252945B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014034659A JP6243255B2 (ja) 2014-02-25 2014-02-25 ワークの平面研削方法
JPJP-P-2014-034659 2014-02-25

Publications (2)

Publication Number Publication Date
KR20150100577A KR20150100577A (ko) 2015-09-02
KR102252945B1 true KR102252945B1 (ko) 2021-05-18

Family

ID=53782699

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150026470A KR102252945B1 (ko) 2014-02-25 2015-02-25 워크의 평면 연삭 방법

Country Status (7)

Country Link
US (1) US9669511B2 (zh)
JP (1) JP6243255B2 (zh)
KR (1) KR102252945B1 (zh)
CN (1) CN104858737B (zh)
DE (1) DE102015203109A1 (zh)
RU (1) RU2686974C2 (zh)
TW (1) TWI642517B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9855637B2 (en) * 2014-04-10 2018-01-02 Apple Inc. Thermographic characterization for surface finishing process development
WO2016039057A1 (ja) 2014-09-10 2016-03-17 株式会社村田製作所 金属間化合物の生成方法
KR102465703B1 (ko) * 2017-11-22 2022-11-11 주식회사 케이씨텍 화학 기계적 연마 장치 및 화학 기계적 연마 방법
JP7108450B2 (ja) * 2018-04-13 2022-07-28 株式会社ディスコ 研磨装置
JP7301512B2 (ja) * 2018-09-13 2023-07-03 株式会社岡本工作機械製作所 基板研削装置及び基板研削方法
CN110270891B (zh) * 2019-07-17 2020-06-19 浙江台佳电子信息科技有限公司 Vr投显用晶圆级玻璃基片生产工艺
JP2022074517A (ja) * 2020-11-04 2022-05-18 株式会社ディスコ 被加工物の研削方法
CN113770823A (zh) * 2021-09-28 2021-12-10 湖南圣高机械科技有限公司 一种平面研磨机
CN115781494A (zh) * 2022-12-01 2023-03-14 中国科学院西安光学精密机械研究所 一种往复式研磨抛光加工装置及光学元件加工方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000117616A (ja) * 1998-08-11 2000-04-25 Hitachi Ltd 半導体装置の製造方法及び加工装置
US20080220698A1 (en) * 2007-03-07 2008-09-11 Stanley Monroe Smith Systems and methods for efficient slurry application for chemical mechanical polishing
JP2011142201A (ja) * 2010-01-07 2011-07-21 Okamoto Machine Tool Works Ltd 半導体基板の平坦化加工装置および平坦化加工方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU95671A1 (ru) * 1952-02-12 1952-11-30 Я.И. Андрусенко Устройство дл управлени подачей воды и абразивных или полировальных материалов на шлифовальную шайбу
US2916858A (en) * 1958-07-18 1959-12-15 Arthur F Hudson Contour forming machine
US3863398A (en) * 1973-05-14 1975-02-04 Moni Inc Two speed grinding machine
SU1827957A1 (ru) * 1991-05-24 1996-03-20 Научно-производственное объединение "Пульсар" СПОСОБ ДОВОДКИ ПЛАСТИН ИЗ ТВЕРДЫХ МАТЕРИАЛОВ НА ОСНОВЕ α -2AlO
JPH05285812A (ja) * 1992-04-10 1993-11-02 Nippon Steel Corp 研削方法
US5384991A (en) * 1993-03-17 1995-01-31 Leinweber Maschinen Gmbh & Co. Kg Method and apparatus for grinding and slotting friction products
US5597443A (en) * 1994-08-31 1997-01-28 Texas Instruments Incorporated Method and system for chemical mechanical polishing of semiconductor wafer
US6043961A (en) * 1995-09-08 2000-03-28 Kao Corporation Magnetic recording medium and method for producing the same
JPH10329032A (ja) * 1997-05-29 1998-12-15 Sumitomo Osaka Cement Co Ltd Ｌｓｉ酸化膜研磨用砥石およびｌｓｉ酸化膜研磨方法
US5997392A (en) * 1997-07-22 1999-12-07 International Business Machines Corporation Slurry injection technique for chemical-mechanical polishing
JP2000015557A (ja) * 1998-04-27 2000-01-18 Ebara Corp 研磨装置
JP3909619B2 (ja) * 1998-05-19 2007-04-25 独立行政法人理化学研究所 磁気ディスク基板の鏡面加工装置及び方法
US6132295A (en) * 1999-08-12 2000-10-17 Applied Materials, Inc. Apparatus and method for grinding a semiconductor wafer surface
JP2002103227A (ja) * 2000-09-25 2002-04-09 Canon Inc 研磨又は研削加工方法、光学素子の加工方法、蛍石の加工方法、研磨及び又は研削加工装置、光学素子の研磨及び又は研削加工装置、光学素子の表面を加工する装置、レンズ
MY126192A (en) * 2001-07-03 2006-09-29 Canon Kk Lens processing management system
US20040137834A1 (en) * 2003-01-15 2004-07-15 General Electric Company Multi-resinous molded articles having integrally bonded graded interfaces
JP2004260122A (ja) * 2003-02-28 2004-09-16 Nippei Toyama Corp ウェーハ研削装置
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
JP2008028232A (ja) * 2006-07-24 2008-02-07 Sharp Corp 半導体基板研磨装置および半導体基板研磨方法、半導体装置の製造方法
TWI548483B (zh) * 2011-07-19 2016-09-11 荏原製作所股份有限公司 研磨裝置及方法
JP5791987B2 (ja) * 2011-07-19 2015-10-07 株式会社荏原製作所 研磨装置および方法
JP5955069B2 (ja) 2012-04-19 2016-07-20 株式会社ディスコ ウエーハの研削方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000117616A (ja) * 1998-08-11 2000-04-25 Hitachi Ltd 半導体装置の製造方法及び加工装置
US20080220698A1 (en) * 2007-03-07 2008-09-11 Stanley Monroe Smith Systems and methods for efficient slurry application for chemical mechanical polishing
JP2011142201A (ja) * 2010-01-07 2011-07-21 Okamoto Machine Tool Works Ltd 半導体基板の平坦化加工装置および平坦化加工方法

Also Published As

Publication number Publication date
RU2015106005A (ru) 2016-09-10
TW201544255A (zh) 2015-12-01
RU2686974C2 (ru) 2019-05-06
JP6243255B2 (ja) 2017-12-06
KR20150100577A (ko) 2015-09-02
CN104858737B (zh) 2020-12-25
TWI642517B (zh) 2018-12-01
US9669511B2 (en) 2017-06-06
RU2015106005A3 (zh) 2018-10-01
DE102015203109A1 (de) 2015-08-27
CN104858737A (zh) 2015-08-26
JP2015160249A (ja) 2015-09-07
US20150239089A1 (en) 2015-08-27

Similar Documents

Publication Publication Date Title
KR102252945B1 (ko) 워크의 평면 연삭 방법
JP2008018528A (ja) 複数の半導体ウェハを同時に両面研磨する方法および半導体ウェハ
US20120289127A1 (en) Lens spherical surface grinding method using dish-shaped grindstone
KR20150115644A (ko) 연삭휠 및 연삭실의 세정 방법
US20190134782A1 (en) Grinding wheel
JP2010076013A (ja) 回転砥石の研磨方法および研磨装置、並びに研削砥石およびこれを用いた研削装置
JP6517108B2 (ja) Ｃｍｐ研磨装置
WO2014057894A1 (ja) 弾性砥石のドレッシング方法
JP2015196224A (ja) 研磨方法、及び保持具
JP2014205225A (ja) 高硬度脆性材料の研削用砥石
JP6234250B2 (ja) ドレッシング工具
JP6843692B2 (ja) 研削砥石のドレッシング方法
JP2007048780A (ja) ウェーハ面取り装置
JP2012222123A (ja) 半導体ウェハの研削方法
JP6812068B2 (ja) 加工方法
JP2004050313A (ja) 研削用砥石および研削方法
JP2005161449A (ja) 鏡面加工用カップ型超砥粒ホイール
KR101206922B1 (ko) 웨이퍼 연마 장치
JP2024011312A (ja) ウェーハの研削方法および研削装置
JP2009099788A (ja) ウェハの製造方法
JPH0138626B2 (zh)
JP2023077743A (ja) 研削ホイール及び被加工物の研削方法
TW202412994A (zh) 晶圓的研削方法以及研削裝置
JP5478208B2 (ja) 平面研削砥石の初期摩耗抑制方法
JPH05345266A (ja) 研削方法及び研削装置用の刃

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant