KR102246213B9 - 고온 에칭액을 제공하는 처리 시스템 및 방법 - Google Patents

고온 에칭액을 제공하는 처리 시스템 및 방법

Info

Publication number
KR102246213B9
KR102246213B9 KR1020157026273A KR20157026273A KR102246213B9 KR 102246213 B9 KR102246213 B9 KR 102246213B9 KR 1020157026273 A KR1020157026273 A KR 1020157026273A KR 20157026273 A KR20157026273 A KR 20157026273A KR 102246213 B9 KR102246213 B9 KR 102246213B9
Authority
KR
South Korea
Prior art keywords
providing
processing system
etching solution
heated etching
heated
Prior art date
Application number
KR1020157026273A
Other languages
English (en)
Other versions
KR102246213B1 (ko
KR20150127126A (ko
Inventor
케빈 엘. 시페링
윌리엄 피. 인호퍼
Original Assignee
티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51523480&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR102246213(B9) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. filed Critical 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크.
Publication of KR20150127126A publication Critical patent/KR20150127126A/ko
Application granted granted Critical
Publication of KR102246213B1 publication Critical patent/KR102246213B1/ko
Publication of KR102246213B9 publication Critical patent/KR102246213B9/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4835—Cleaning, e.g. removing of solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Weting (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
KR1020157026273A 2013-03-15 2014-03-13 고온 에칭액을 제공하는 처리 시스템 및 방법 KR102246213B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201361801072P 2013-03-15 2013-03-15
US61/801,072 2013-03-15
US201461924847P 2014-01-08 2014-01-08
US201461924838P 2014-01-08 2014-01-08
US61/924,847 2014-01-08
US61/924,838 2014-01-08
US201461928894P 2014-01-17 2014-01-17
US61/928,894 2014-01-17
PCT/US2014/026432 WO2014151778A1 (en) 2013-03-15 2014-03-13 Processing system and method for providing a heated etching solution

Publications (3)

Publication Number Publication Date
KR20150127126A KR20150127126A (ko) 2015-11-16
KR102246213B1 KR102246213B1 (ko) 2021-04-28
KR102246213B9 true KR102246213B9 (ko) 2022-06-24

Family

ID=51523480

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020157026273A KR102246213B1 (ko) 2013-03-15 2014-03-13 고온 에칭액을 제공하는 처리 시스템 및 방법
KR1020157026457A KR102204850B1 (ko) 2013-03-15 2014-03-13 가열된 에칭 용액을 제공하기 위한 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020157026457A KR102204850B1 (ko) 2013-03-15 2014-03-13 가열된 에칭 용액을 제공하기 위한 시스템

Country Status (6)

Country Link
US (2) US9911631B2 (ko)
JP (2) JP6427166B2 (ko)
KR (2) KR102246213B1 (ko)
CN (2) CN105339183B (ko)
TW (2) TWI591713B (ko)
WO (2) WO2014151862A1 (ko)

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Also Published As

Publication number Publication date
US9911631B2 (en) 2018-03-06
TW201505087A (zh) 2015-02-01
TW201501195A (zh) 2015-01-01
KR102204850B9 (ko) 2023-01-09
WO2014151778A1 (en) 2014-09-25
TWI591713B (zh) 2017-07-11
KR102204850B1 (ko) 2021-01-18
US20140264153A1 (en) 2014-09-18
JP6352385B2 (ja) 2018-07-04
WO2014151862A1 (en) 2014-09-25
CN105339183A (zh) 2016-02-17
CN105339183B (zh) 2018-11-09
JP2016519424A (ja) 2016-06-30
KR20150131071A (ko) 2015-11-24
CN105121376B (zh) 2018-02-27
US9831107B2 (en) 2017-11-28
TWI555078B (zh) 2016-10-21
CN105121376A (zh) 2015-12-02
US20140277682A1 (en) 2014-09-18
JP6427166B2 (ja) 2018-11-21
KR102246213B1 (ko) 2021-04-28
JP2016513887A (ja) 2016-05-16
KR20150127126A (ko) 2015-11-16

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