KR102241900B1 - 워크피스를 플라즈마 에칭하기 위한 방법 - Google Patents

워크피스를 플라즈마 에칭하기 위한 방법 Download PDF

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KR102241900B1
KR102241900B1 KR1020170063008A KR20170063008A KR102241900B1 KR 102241900 B1 KR102241900 B1 KR 102241900B1 KR 1020170063008 A KR1020170063008 A KR 1020170063008A KR 20170063008 A KR20170063008 A KR 20170063008A KR 102241900 B1 KR102241900 B1 KR 102241900B1
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South Korea
Prior art keywords
etching
plasma
steps
substrate
cycle
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KR20170131279A (ko
Inventor
로내니 니콜라스
바르바라 맥시메
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에스피티에스 테크놀러지스 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H01L21/3065—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H01L21/67069—
    • H01L21/6831—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020170063008A 2016-05-20 2017-05-22 워크피스를 플라즈마 에칭하기 위한 방법 Active KR102241900B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1608926.0A GB201608926D0 (en) 2016-05-20 2016-05-20 Method for plasma etching a workpiece
GB1608926.0 2016-05-20

Publications (2)

Publication Number Publication Date
KR20170131279A KR20170131279A (ko) 2017-11-29
KR102241900B1 true KR102241900B1 (ko) 2021-04-16

Family

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Family Applications (1)

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KR1020170063008A Active KR102241900B1 (ko) 2016-05-20 2017-05-22 워크피스를 플라즈마 에칭하기 위한 방법

Country Status (7)

Country Link
US (1) US10062576B2 (https=)
EP (1) EP3285284B1 (https=)
JP (1) JP6898149B2 (https=)
KR (1) KR102241900B1 (https=)
CN (1) CN107452611B (https=)
GB (1) GB201608926D0 (https=)
TW (1) TWI713110B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11270893B2 (en) 2019-04-08 2022-03-08 International Business Machines Corporation Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
WO2021127862A1 (en) * 2019-12-23 2021-07-01 Applied Materials, Inc. Methods for etching a material layer for semiconductor applications

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989003899A1 (en) 1987-10-23 1989-05-05 Unisearch Limited Etching process using metal compounds
US6008133A (en) * 1991-04-04 1999-12-28 Hitachi, Ltd. Method and apparatus for dry etching
JPH06120174A (ja) * 1992-10-05 1994-04-28 Seiko Epson Corp 半導体装置の製造方法
EP0822582B1 (en) 1996-08-01 2003-10-01 Surface Technology Systems Plc Method of etching substrates
TW506234B (en) 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US20030153195A1 (en) 2002-02-13 2003-08-14 Applied Materials, Inc. Method and apparatus for providing modulated bias power to a plasma etch reactor
US6846747B2 (en) * 2002-04-09 2005-01-25 Unaxis Usa Inc. Method for etching vias
US6759339B1 (en) 2002-12-13 2004-07-06 Silicon Magnetic Systems Method for plasma etching a microelectronic topography using a pulse bias power
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US7141505B2 (en) * 2003-06-27 2006-11-28 Lam Research Corporation Method for bilayer resist plasma etch
US7838430B2 (en) 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
KR20070003021A (ko) * 2005-06-30 2007-01-05 주식회사 하이닉스반도체 반도체소자의 제조 방법
GB0516054D0 (en) * 2005-08-04 2005-09-14 Trikon Technologies Ltd A method of processing substrates
JP5174319B2 (ja) 2005-11-11 2013-04-03 株式会社日立ハイテクノロジーズ エッチング処理装置およびエッチング処理方法
US7985688B2 (en) * 2005-12-16 2011-07-26 Lam Research Corporation Notch stop pulsing process for plasma processing system
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7351664B2 (en) * 2006-05-30 2008-04-01 Lam Research Corporation Methods for minimizing mask undercuts and notches for plasma processing system
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
JP5097632B2 (ja) 2008-07-11 2012-12-12 株式会社日立ハイテクノロジーズ プラズマエッチング処理装置
US9039908B2 (en) * 2008-08-27 2015-05-26 Applied Materials, Inc. Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
US8691702B2 (en) 2011-03-14 2014-04-08 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
JP5937385B2 (ja) 2012-03-16 2016-06-22 東京エレクトロン株式会社 半導体製造装置のガス供給方法、ガス供給システム及び半導体製造装置
US8728951B2 (en) * 2012-07-31 2014-05-20 Varian Semiconductor Equipment Associates, Inc. Method and system for ion-assisted processing
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Also Published As

Publication number Publication date
GB201608926D0 (en) 2016-07-06
JP6898149B2 (ja) 2021-07-07
TWI713110B (zh) 2020-12-11
TW201742148A (zh) 2017-12-01
EP3285284A1 (en) 2018-02-21
JP2017208548A (ja) 2017-11-24
US20170338124A1 (en) 2017-11-23
CN107452611B (zh) 2023-02-28
KR20170131279A (ko) 2017-11-29
EP3285284B1 (en) 2021-11-24
US10062576B2 (en) 2018-08-28
CN107452611A (zh) 2017-12-08

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