KR102221266B1 - 웨이퍼 형상 물품들을 프로세싱하기 위한 방법 및 장치 - Google Patents

웨이퍼 형상 물품들을 프로세싱하기 위한 방법 및 장치 Download PDF

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KR102221266B1
KR102221266B1 KR1020150113445A KR20150113445A KR102221266B1 KR 102221266 B1 KR102221266 B1 KR 102221266B1 KR 1020150113445 A KR1020150113445 A KR 1020150113445A KR 20150113445 A KR20150113445 A KR 20150113445A KR 102221266 B1 KR102221266 B1 KR 102221266B1
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wafer
shaped article
heater
rotating chuck
shaped
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KR20160024759A (ko
Inventor
라이너 오브위거
안드레아스 글라이스너
토마스 비른스베르거
프란츠 쿰니히
알레산드로 발다로
크리스티앙 토마스 피셔
무 헝 추
라팔 리챠드 딜위스
나단 라브도브스키
3세 이반 엘. 베리
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램 리서치 아게
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    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H01L21/02282—
    • H01L21/324—
    • H01L21/67011—
    • H01L21/6831—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
KR1020150113445A 2014-08-26 2015-08-11 웨이퍼 형상 물품들을 프로세싱하기 위한 방법 및 장치 Active KR102221266B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/469,363 2014-08-26
US14/469,363 US10490426B2 (en) 2014-08-26 2014-08-26 Method and apparatus for processing wafer-shaped articles

Publications (2)

Publication Number Publication Date
KR20160024759A KR20160024759A (ko) 2016-03-07
KR102221266B1 true KR102221266B1 (ko) 2021-03-02

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KR1020150113445A Active KR102221266B1 (ko) 2014-08-26 2015-08-11 웨이퍼 형상 물품들을 프로세싱하기 위한 방법 및 장치

Country Status (5)

Country Link
US (2) US10490426B2 (https=)
JP (2) JP6632833B2 (https=)
KR (1) KR102221266B1 (https=)
CN (1) CN105390416B (https=)
TW (1) TWI675419B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748120B2 (en) 2013-07-01 2017-08-29 Lam Research Ag Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus
US9597701B2 (en) * 2013-12-31 2017-03-21 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US9657397B2 (en) * 2013-12-31 2017-05-23 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US10490426B2 (en) 2014-08-26 2019-11-26 Lam Research Ag Method and apparatus for processing wafer-shaped articles
US20180040502A1 (en) * 2016-08-05 2018-02-08 Lam Research Ag Apparatus for processing wafer-shaped articles
JP7297664B2 (ja) * 2016-11-09 2023-06-26 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
US11056358B2 (en) * 2017-11-14 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer cleaning apparatus and method
KR102099433B1 (ko) * 2018-08-29 2020-04-10 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
GB201900912D0 (en) * 2019-01-23 2019-03-13 Lam Res Ag Apparatus for processing a wafer, and method of controlling such an apparatus
WO2022033337A1 (zh) 2020-08-10 2022-02-17 江西亿铂电子科技有限公司 一种显影盒、鼓盒和图像形成装置
US11454901B2 (en) 2020-08-10 2022-09-27 Jiangxi Yibo E-Tech Co. Ltd. Developing cartridge
KR102624576B1 (ko) * 2020-11-23 2024-01-16 세메스 주식회사 기판 처리 장치
JP7230077B2 (ja) 2021-02-12 2023-02-28 ウシオ電機株式会社 温度測定方法、光加熱方法及び光加熱装置
JP7625458B2 (ja) * 2021-03-22 2025-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7569752B2 (ja) * 2021-06-07 2024-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN115896744B (zh) * 2021-08-17 2025-02-21 北京北方华创微电子装备有限公司 半导体工艺设备
KR102705519B1 (ko) * 2022-02-21 2024-09-11 (주)디바이스이엔지 기판 식각 처리장치
JP2023169533A (ja) * 2022-05-17 2023-11-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141896A (ja) * 2005-11-14 2007-06-07 Tokyo Electron Ltd 加熱装置、熱処理装置及び記憶媒体
JP2012138510A (ja) * 2010-12-27 2012-07-19 Tokyo Electron Ltd 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体
JP2013207042A (ja) * 2012-03-28 2013-10-07 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6314434A (ja) 1986-07-04 1988-01-21 Dainippon Screen Mfg Co Ltd 基板表面処理方法および装置
AT389959B (de) 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
JP2628070B2 (ja) 1988-06-21 1997-07-09 東京エレクトロン株式会社 アッシング装置
JP3152430B2 (ja) 1990-10-09 2001-04-03 クロリンエンジニアズ株式会社 有機物被膜の除去方法
JPH05166718A (ja) 1991-12-17 1993-07-02 Hitachi Ltd 半導体製造方法
JPH05326483A (ja) 1992-05-15 1993-12-10 Sony Corp ウエハ処理装置およびウエハ一貫処理装置
DE59407361D1 (de) 1993-02-08 1999-01-14 Sez Semiconduct Equip Zubehoer Träger für scheibenförmige Gegenstände
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US5667622A (en) 1995-08-25 1997-09-16 Siemens Aktiengesellschaft In-situ wafer temperature control apparatus for single wafer tools
US5818137A (en) 1995-10-26 1998-10-06 Satcon Technology, Inc. Integrated magnetic levitation and rotation system
CN1220193A (zh) 1997-12-19 1999-06-23 南亚科技股份有限公司 无水印产生的方法及其装置
US6485531B1 (en) 1998-09-15 2002-11-26 Levitronix Llc Process chamber
JP3869566B2 (ja) 1998-11-13 2007-01-17 三菱電機株式会社 フォトレジスト膜除去方法および装置
TW459165B (en) 1999-10-22 2001-10-11 Mosel Vitelic Inc Method for the rework of photoresist
US6536454B2 (en) 2000-07-07 2003-03-25 Sez Ag Device for treating a disc-shaped object
TW589676B (en) 2002-01-22 2004-06-01 Toho Kasei Co Ltd Substrate drying method and apparatus
JP3684356B2 (ja) 2002-03-05 2005-08-17 株式会社カイジョー 洗浄物の乾燥装置及び乾燥方法
WO2003079426A1 (fr) 2002-03-18 2003-09-25 Sumitomo Precision Products Co., Ltd. Procede et systeme de traitement a l'ozone
US6818864B2 (en) 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
US7022193B2 (en) * 2002-10-29 2006-04-04 In Kwon Jeong Apparatus and method for treating surfaces of semiconductor wafers using ozone
US7051743B2 (en) * 2002-10-29 2006-05-30 Yong Bae Kim Apparatus and method for cleaning surfaces of semiconductor wafers using ozone
JP4460334B2 (ja) 2004-03-12 2010-05-12 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
CN1841669A (zh) 2005-03-29 2006-10-04 弘塑科技股份有限公司 晶片干燥方法
JP4680044B2 (ja) 2005-11-24 2011-05-11 東京エレクトロン株式会社 液処理方法、液処理装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
JP2007173432A (ja) 2005-12-21 2007-07-05 Seiko Epson Corp 半導体基板処理装置及び半導体装置の製造方法
EP1992008A1 (en) 2006-02-28 2008-11-19 Sez Ag Device and method for liquid treating disc-like articles
JP4937278B2 (ja) 2006-03-08 2012-05-23 ラム・リサーチ・アクチエンゲゼルシヤフト 板状物品の流体処理用装置
US20070227556A1 (en) 2006-04-04 2007-10-04 Bergman Eric J Methods for removing photoresist
JP5106800B2 (ja) 2006-06-26 2012-12-26 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
CN100501921C (zh) 2006-06-27 2009-06-17 大日本网目版制造株式会社 基板处理方法以及基板处理装置
US7378618B1 (en) 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
CN103824757B (zh) 2007-05-23 2018-11-23 细美事有限公司 基板干燥的装置与方法
JP5188216B2 (ja) 2007-07-30 2013-04-24 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2009099925A (ja) * 2007-09-27 2009-05-07 Tokyo Electron Ltd アニール装置
EP2166564B1 (en) 2008-09-19 2017-04-12 Imec Method for removing a hardened photoresist from a semiconductor substrate
US8404499B2 (en) 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
KR20120034948A (ko) 2010-10-04 2012-04-13 삼성전자주식회사 기판 건조 장치 및 이를 이용한 기판 건조 방법
JP5304771B2 (ja) 2010-11-30 2013-10-02 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5642575B2 (ja) * 2011-01-25 2014-12-17 東京エレクトロン株式会社 液処理装置および液処理方法
US9355883B2 (en) * 2011-09-09 2016-05-31 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US8734662B2 (en) 2011-12-06 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Techniques providing photoresist removal
KR101308352B1 (ko) 2011-12-16 2013-09-17 주식회사 엘지실트론 매엽식 웨이퍼 에칭장치
US9548223B2 (en) * 2011-12-23 2017-01-17 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
JP6061378B2 (ja) 2012-11-05 2017-01-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6131162B2 (ja) * 2012-11-08 2017-05-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US20140270731A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Thermal management apparatus for solid state light source arrays
US9721792B2 (en) * 2013-09-16 2017-08-01 Applied Materials, Inc. Method of forming strain-relaxed buffer layers
US10490426B2 (en) 2014-08-26 2019-11-26 Lam Research Ag Method and apparatus for processing wafer-shaped articles

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141896A (ja) * 2005-11-14 2007-06-07 Tokyo Electron Ltd 加熱装置、熱処理装置及び記憶媒体
JP2012138510A (ja) * 2010-12-27 2012-07-19 Tokyo Electron Ltd 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体
JP2013207042A (ja) * 2012-03-28 2013-10-07 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
KR20160024759A (ko) 2016-03-07
JP2020065062A (ja) 2020-04-23
JP6632833B2 (ja) 2020-01-22
CN105390416B (zh) 2018-10-02
JP6890172B2 (ja) 2021-06-18
JP2016046531A (ja) 2016-04-04
US20160064242A1 (en) 2016-03-03
US10490426B2 (en) 2019-11-26
US20200090956A1 (en) 2020-03-19
US11195730B2 (en) 2021-12-07
TWI675419B (zh) 2019-10-21
TW201620039A (zh) 2016-06-01
CN105390416A (zh) 2016-03-09

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