JP6632833B2 - ウエハ状物品を処理するための方法及び装置 - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Description
Claims (23)
- ウエハ状物品を処理するための装置であって、
気密式の囲いを提供するケースを含む密閉プロセスチャンバと、
前記密閉プロセスチャンバ内に配置され、所定の直径のウエハ状物品をその上に保持するように構成された回転式チャックと、
前記回転式チャック上に保持されたウエハ状物品を、前記ウエハ状物品に接触することなく片側からのみ加熱するために、前記回転式チャックに載置されたウエハ状物品の片面側にのみ配置されたヒータであって、390〜550nmの波長域内に最大強度を有する放射を放出するヒータと、
ウエハ状物品の、前記ヒータに面している側とは反対側にプロセス液を吐出するために、前記回転式チャックに対して相対的に位置決めされた少なくとも1つの第1の液体吐出器と、
を備える装置。 - 請求項1に記載の装置であって、
前記回転式チャックは、前記密閉プロセスチャンバの内側に位置決めされた磁気リングロータであり、前記密閉プロセスチャンバの外側に位置決めされたステータによって取り囲まれる、装置。 - 請求項1に記載の装置であって、
前記回転式チャックは、前記回転式チャックに結合された回転シャフトに出力を伝達するモータによって駆動される、装置。 - 請求項1に記載の装置であって、
前記密閉プロセスチャンバは、前記少なくとも1つの第1の液体吐出器の出口が位置する上方領域と、前記ヒータが中に又は隣接して位置する下方領域とを含み、それによって、前記ヒータは、ウエハ状物品を下側から加熱するように構成され、前記少なくとも1つの第1の液体吐出器は、ウエハ状物品の上側にプロセス液を吐出するように構成される、装置。 - 請求項1に記載の装置であって、
前記ヒータは、400〜500nmの波長域内に最大強度を有する放射を放出する、装置。 - 請求項1に記載の装置であって、
前記ヒータは、青色発光ダイオードのアレイを含む、装置。 - 請求項6に記載の装置であって、
前記青色発光ダイオードのアレイは、前記所定の直径のウエハ状物品と実質的に同一の広がりを有する、装置。 - 請求項1に記載の装置であって、更に、
前記密閉プロセスチャンバに通じるガス入口にオゾンガスを供給するように構成されたオゾン発生器を備える装置。 - 請求項8に記載の装置であって、
前記ガス入口は、ウエハ状物品の、前記ヒータに面している側とは反対側に向けてオゾンガスを供給するために、前記回転式チャックに対して相対的に位置決めされる、装置。 - 請求項1に記載の装置であって、更に、
前記ヒータと、前記回転式チャック上に保持されているときのウエハ状物品との間に位置決めされ、前記ヒータによって放出される放射に対して実質的に透過性である第1の板を備える装置。 - 請求項10に記載の装置であって、
前記第1の板は、石英又はサファイアで作成される、装置。 - 請求項10に記載の装置であって、
前記第1の板は、前記密閉プロセスチャンバの壁の少なくとも一部を形成し、前記ヒータは、前記密閉プロセスチャンバの外側に取り付けられる、装置。 - 請求項10に記載の装置であって、
前記第1の板は、前記回転式チャックの基部本体の上方に且つ前記回転式チャック上に保持されているときのウエハ状物品の下方に配置され、前記密閉プロセスチャンバの内側で前記回転式チャック上に取り付けられる、装置。 - 請求項1に記載の装置であって、更に、
前記回転式チャックとともに回転させるために前記回転式チャック上に取り付けられた第2の板を備え、前記第2の板は、前記ウエハ状物品に対して前記少なくとも1つの液体吐出器と同じ側にあり、前記第2の板は、前記密閉プロセスチャンバの片側の内部を、前記ウエハ状物品から振り落とされる液滴から遮る、装置。 - 請求項1に記載の装置であって、更に、
前記ウエハ状物品に対して前記ヒータと同じ側に取り付けられた少なくとも1つの第2の液体吐出器を備える装置。 - 請求項1に記載の装置であって、
前記ヒータは、前記所定の直径のシリコンウエハを300℃を超える温度に加熱するように構成される、装置。 - ウエハ状物品を処理するための方法であって、
所定の直径のウエハ状物品を、密閉プロセスチャンバ内に配置された回転式チャック上に位置決めすることと、
前記ウエハ状物品を、前記ウエハ状物品に接触することなく、前記回転式チャックに載置されたウエハ状物品の片面側にのみ配置されたヒータによって、片側からのみ、390〜550nmの波長域内に最大強度を有する放射で加熱することと、
前記ウエハ状物品の、前記ヒータに面している側とは反対側にプロセス液を吐出することと、
を備える方法。 - 請求項17に記載の方法であって、更に、
主にガス状であるオゾンを前記密閉プロセスチャンバに導入することを備える方法。 - 請求項18に記載の方法であって、
前記オゾンを導入すること及び前記プロセス液を吐出することは、前記密閉プロセスチャンバからの前記ウエハ状物品の取り出しを妨げることなく順次実施される、方法。 - 請求項18に記載の方法であって、
前記オゾンを導入すること及び前記プロセス液を吐出することは、同時に実施される、方法。 - 請求項17に記載の方法であって、
前記ウエハ状物品は、前記ウエハ状物品の、前記ヒータに面している側とは反対側に半導体デバイス素子を形成された半導体ウエハである、方法。 - 請求項17に記載の方法であって、
前記プロセス液は、実質的に硫酸フリーである、方法。 - 請求項17に記載の方法であって、
前記ウエハ状物品を加熱することは、その結果、前記ウエハ状物品に300℃を超える温度を達成させる、方法。
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US11195730B2 (en) | 2014-08-26 | 2021-12-07 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
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US9748120B2 (en) | 2013-07-01 | 2017-08-29 | Lam Research Ag | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
US9597701B2 (en) * | 2013-12-31 | 2017-03-21 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US9657397B2 (en) * | 2013-12-31 | 2017-05-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US20180040502A1 (en) * | 2016-08-05 | 2018-02-08 | Lam Research Ag | Apparatus for processing wafer-shaped articles |
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US11195730B2 (en) | 2014-08-26 | 2021-12-07 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
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JP6890172B2 (ja) | 2021-06-18 |
JP2020065062A (ja) | 2020-04-23 |
TW201620039A (zh) | 2016-06-01 |
KR102221266B1 (ko) | 2021-03-02 |
US20160064242A1 (en) | 2016-03-03 |
JP2016046531A (ja) | 2016-04-04 |
US10490426B2 (en) | 2019-11-26 |
US11195730B2 (en) | 2021-12-07 |
CN105390416B (zh) | 2018-10-02 |
US20200090956A1 (en) | 2020-03-19 |
KR20160024759A (ko) | 2016-03-07 |
CN105390416A (zh) | 2016-03-09 |
TWI675419B (zh) | 2019-10-21 |
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