KR102187512B1 - 적층체의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents
적층체의 제조 방법 및 반도체 디바이스의 제조 방법 Download PDFInfo
- Publication number
- KR102187512B1 KR102187512B1 KR1020187023985A KR20187023985A KR102187512B1 KR 102187512 B1 KR102187512 B1 KR 102187512B1 KR 1020187023985 A KR1020187023985 A KR 1020187023985A KR 20187023985 A KR20187023985 A KR 20187023985A KR 102187512 B1 KR102187512 B1 KR 102187512B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- compound
- preferable
- resin composition
- photosensitive resin
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/088—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/14—Corona, ionisation, electrical discharge, plasma treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Formation Of Insulating Films (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2016-035251 | 2016-02-26 | ||
JP2016035251 | 2016-02-26 | ||
PCT/JP2017/006846 WO2017146153A1 (ja) | 2016-02-26 | 2017-02-23 | 積層体の製造方法および半導体デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180104069A KR20180104069A (ko) | 2018-09-19 |
KR102187512B1 true KR102187512B1 (ko) | 2020-12-08 |
Family
ID=59686181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020187023985A KR102187512B1 (ko) | 2016-02-26 | 2017-02-23 | 적층체의 제조 방법 및 반도체 디바이스의 제조 방법 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JPWO2017146153A1 (zh) |
KR (1) | KR102187512B1 (zh) |
CN (1) | CN108700836B (zh) |
TW (2) | TW201741772A (zh) |
WO (1) | WO2017146153A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI779162B (zh) * | 2018-01-29 | 2022-10-01 | 日商富士軟片股份有限公司 | 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法、半導體器件 |
TW202112837A (zh) | 2019-09-26 | 2021-04-01 | 日商富士軟片股份有限公司 | 導熱層的製造方法、積層體的製造方法及半導體器件的製造方法 |
US20230114244A1 (en) | 2020-05-26 | 2023-04-13 | Sumitomo Electric Industries, Ltd. | Cutting tool |
WO2022064917A1 (ja) * | 2020-09-25 | 2022-03-31 | 富士フイルム株式会社 | 硬化物の製造方法、積層体の製造方法、及び、半導体デバイスの製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015087610A (ja) * | 2013-10-31 | 2015-05-07 | 富士フイルム株式会社 | 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物 |
JP2015151405A (ja) * | 2014-02-10 | 2015-08-24 | 日立化成デュポンマイクロシステムズ株式会社 | ポリイミド前駆体を含む樹脂組成物、硬化膜の製造方法及び電子部品 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208158A (en) * | 1981-06-17 | 1982-12-21 | Hitachi Ltd | Manufacture of multilayer wiring structure |
JPS60121740A (ja) * | 1984-02-20 | 1985-06-29 | Hitachi Ltd | 多層配線構造体 |
JPH05214046A (ja) * | 1992-02-06 | 1993-08-24 | Hitachi Ltd | 配線構造体 |
JPH06181264A (ja) * | 1992-12-14 | 1994-06-28 | Hitachi Ltd | 配線構造体及びその製造方法 |
JP2001064416A (ja) * | 1999-08-31 | 2001-03-13 | Nippon Zeon Co Ltd | ポリイミド膜及びその製造方法 |
JP2001154365A (ja) * | 1999-11-30 | 2001-06-08 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物、パターンの製造法及び電子部品 |
JP2002217377A (ja) * | 2001-01-18 | 2002-08-02 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
TW200500204A (en) | 2002-12-05 | 2005-01-01 | Kaneka Corp | Laminate, printed circuit board and method for manufacturing them |
WO2006109655A1 (ja) * | 2005-04-08 | 2006-10-19 | Mitsui Chemicals, Inc. | ポリイミドフィルム及びそれを用いたポリイミド金属積層体とその製造方法 |
KR100629359B1 (ko) * | 2005-08-09 | 2006-10-02 | 삼성전자주식회사 | 감광성 폴리이미드막을 사용하여 반도체소자를 제조하는방법들 및 그에 의해 제조된 반도체소자들 |
MY146083A (en) * | 2007-02-19 | 2012-06-29 | Sumitomo Bakelite Co | Photosensitive resin composition, cured film, protective film, insulating film, semiconductor device and display device using the same |
JP5043932B2 (ja) * | 2007-04-04 | 2012-10-10 | 旭化成エレクトロニクス株式会社 | 感光性ポリアミド酸エステル組成物 |
CA2804131C (en) * | 2011-06-10 | 2013-10-29 | Mitsubishi Gas Chemical Company, Inc. | Reactive polyamide resins and polyamide resin compositions |
CN106414071B (zh) * | 2014-07-18 | 2018-07-13 | 日立化成株式会社 | 层叠膜 |
-
2017
- 2017-02-22 TW TW106105823A patent/TW201741772A/zh unknown
- 2017-02-22 TW TW109142641A patent/TWI767436B/zh active
- 2017-02-23 KR KR1020187023985A patent/KR102187512B1/ko active IP Right Grant
- 2017-02-23 JP JP2018501763A patent/JPWO2017146153A1/ja active Pending
- 2017-02-23 CN CN201780012588.4A patent/CN108700836B/zh active Active
- 2017-02-23 WO PCT/JP2017/006846 patent/WO2017146153A1/ja active Application Filing
-
2020
- 2020-01-27 JP JP2020010849A patent/JP6901596B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015087610A (ja) * | 2013-10-31 | 2015-05-07 | 富士フイルム株式会社 | 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物 |
JP2015151405A (ja) * | 2014-02-10 | 2015-08-24 | 日立化成デュポンマイクロシステムズ株式会社 | ポリイミド前駆体を含む樹脂組成物、硬化膜の製造方法及び電子部品 |
Also Published As
Publication number | Publication date |
---|---|
TW201741772A (zh) | 2017-12-01 |
JPWO2017146153A1 (ja) | 2019-01-17 |
CN108700836B (zh) | 2022-06-28 |
KR20180104069A (ko) | 2018-09-19 |
TWI767436B (zh) | 2022-06-11 |
TW202115498A (zh) | 2021-04-16 |
WO2017146153A1 (ja) | 2017-08-31 |
JP6901596B2 (ja) | 2021-07-14 |
CN108700836A (zh) | 2018-10-23 |
JP2020091490A (ja) | 2020-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI671343B (zh) | 熱硬化性樹脂組成物、硬化膜、硬化膜的製造方法以及半導體裝置 | |
TWI730962B (zh) | 感光性樹脂組成物、硬化膜、硬化膜的製造方法、半導體元件以及聚醯亞胺前驅物組成物的製造方法 | |
JP6247432B1 (ja) | 積層体、積層体の製造方法、半導体デバイス、および、半導体デバイスの製造方法 | |
JP6167089B2 (ja) | 感光性樹脂組成物、硬化膜、硬化膜の製造方法および半導体デバイス | |
JP6257870B2 (ja) | 樹脂、組成物、硬化膜、硬化膜の製造方法および半導体デバイス | |
TWI701271B (zh) | 感光性樹脂組成物及其製造方法、硬化膜、硬化膜的製造方法及半導體裝置 | |
WO2017038664A1 (ja) | 組成物、硬化膜、硬化膜の製造方法、半導体デバイスの製造方法および半導体デバイス | |
JP6616844B2 (ja) | 複素環含有ポリマー前駆体の製造方法、および複素環含有ポリマー前駆体、並びにその応用 | |
JP6481032B2 (ja) | ネガ型感光性樹脂組成物、硬化膜、硬化膜の製造方法および半導体デバイス | |
JP6901596B2 (ja) | 積層体の製造方法および半導体デバイスの製造方法 | |
TW201714934A (zh) | 硬化膜的製造方法、再配線層用層間絕緣膜的製造方法及半導體元件的製造方法 | |
TWI644979B (zh) | 熱硬化性樹脂組成物、硬化膜、硬化膜的製造方法及半導體元件 | |
TWI704418B (zh) | 負型感光性樹脂組成物、硬化膜、硬化膜的製造方法及半導體元件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
X091 | Application refused [patent] | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
X701 | Decision to grant (after re-examination) | ||
GRNT | Written decision to grant |