KR102187512B1 - 적층체의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents

적층체의 제조 방법 및 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR102187512B1
KR102187512B1 KR1020187023985A KR20187023985A KR102187512B1 KR 102187512 B1 KR102187512 B1 KR 102187512B1 KR 1020187023985 A KR1020187023985 A KR 1020187023985A KR 20187023985 A KR20187023985 A KR 20187023985A KR 102187512 B1 KR102187512 B1 KR 102187512B1
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KR
South Korea
Prior art keywords
group
compound
preferable
resin composition
photosensitive resin
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KR1020187023985A
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English (en)
Korean (ko)
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KR20180104069A (ko
Inventor
유 이와이
카츠유키 이토
스테판 반클로스터
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후지필름 가부시키가이샤
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Publication of KR20180104069A publication Critical patent/KR20180104069A/ko
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387Polyamides or polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/088Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00Treatment by energy or chemical effects
    • B32B2310/14Corona, ionisation, electrical discharge, plasma treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020187023985A 2016-02-26 2017-02-23 적층체의 제조 방법 및 반도체 디바이스의 제조 방법 KR102187512B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-035251 2016-02-26
JP2016035251 2016-02-26
PCT/JP2017/006846 WO2017146153A1 (ja) 2016-02-26 2017-02-23 積層体の製造方法および半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20180104069A KR20180104069A (ko) 2018-09-19
KR102187512B1 true KR102187512B1 (ko) 2020-12-08

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KR1020187023985A KR102187512B1 (ko) 2016-02-26 2017-02-23 적층체의 제조 방법 및 반도체 디바이스의 제조 방법

Country Status (5)

Country Link
JP (2) JPWO2017146153A1 (zh)
KR (1) KR102187512B1 (zh)
CN (1) CN108700836B (zh)
TW (2) TW201741772A (zh)
WO (1) WO2017146153A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI779162B (zh) * 2018-01-29 2022-10-01 日商富士軟片股份有限公司 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法、半導體器件
TW202112837A (zh) 2019-09-26 2021-04-01 日商富士軟片股份有限公司 導熱層的製造方法、積層體的製造方法及半導體器件的製造方法
US20230114244A1 (en) 2020-05-26 2023-04-13 Sumitomo Electric Industries, Ltd. Cutting tool
WO2022064917A1 (ja) * 2020-09-25 2022-03-31 富士フイルム株式会社 硬化物の製造方法、積層体の製造方法、及び、半導体デバイスの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015087610A (ja) * 2013-10-31 2015-05-07 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
JP2015151405A (ja) * 2014-02-10 2015-08-24 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体を含む樹脂組成物、硬化膜の製造方法及び電子部品

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208158A (en) * 1981-06-17 1982-12-21 Hitachi Ltd Manufacture of multilayer wiring structure
JPS60121740A (ja) * 1984-02-20 1985-06-29 Hitachi Ltd 多層配線構造体
JPH05214046A (ja) * 1992-02-06 1993-08-24 Hitachi Ltd 配線構造体
JPH06181264A (ja) * 1992-12-14 1994-06-28 Hitachi Ltd 配線構造体及びその製造方法
JP2001064416A (ja) * 1999-08-31 2001-03-13 Nippon Zeon Co Ltd ポリイミド膜及びその製造方法
JP2001154365A (ja) * 1999-11-30 2001-06-08 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターンの製造法及び電子部品
JP2002217377A (ja) * 2001-01-18 2002-08-02 Hitachi Ltd 半導体集積回路装置およびその製造方法
TW200500204A (en) 2002-12-05 2005-01-01 Kaneka Corp Laminate, printed circuit board and method for manufacturing them
WO2006109655A1 (ja) * 2005-04-08 2006-10-19 Mitsui Chemicals, Inc. ポリイミドフィルム及びそれを用いたポリイミド金属積層体とその製造方法
KR100629359B1 (ko) * 2005-08-09 2006-10-02 삼성전자주식회사 감광성 폴리이미드막을 사용하여 반도체소자를 제조하는방법들 및 그에 의해 제조된 반도체소자들
MY146083A (en) * 2007-02-19 2012-06-29 Sumitomo Bakelite Co Photosensitive resin composition, cured film, protective film, insulating film, semiconductor device and display device using the same
JP5043932B2 (ja) * 2007-04-04 2012-10-10 旭化成エレクトロニクス株式会社 感光性ポリアミド酸エステル組成物
CA2804131C (en) * 2011-06-10 2013-10-29 Mitsubishi Gas Chemical Company, Inc. Reactive polyamide resins and polyamide resin compositions
CN106414071B (zh) * 2014-07-18 2018-07-13 日立化成株式会社 层叠膜

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015087610A (ja) * 2013-10-31 2015-05-07 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
JP2015151405A (ja) * 2014-02-10 2015-08-24 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体を含む樹脂組成物、硬化膜の製造方法及び電子部品

Also Published As

Publication number Publication date
TW201741772A (zh) 2017-12-01
JPWO2017146153A1 (ja) 2019-01-17
CN108700836B (zh) 2022-06-28
KR20180104069A (ko) 2018-09-19
TWI767436B (zh) 2022-06-11
TW202115498A (zh) 2021-04-16
WO2017146153A1 (ja) 2017-08-31
JP6901596B2 (ja) 2021-07-14
CN108700836A (zh) 2018-10-23
JP2020091490A (ja) 2020-06-11

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