KR102180702B1 - 리소그래피 장치, 물품의 제조 방법, 및 계측 장치 - Google Patents

리소그래피 장치, 물품의 제조 방법, 및 계측 장치 Download PDF

Info

Publication number
KR102180702B1
KR102180702B1 KR1020170165547A KR20170165547A KR102180702B1 KR 102180702 B1 KR102180702 B1 KR 102180702B1 KR 1020170165547 A KR1020170165547 A KR 1020170165547A KR 20170165547 A KR20170165547 A KR 20170165547A KR 102180702 B1 KR102180702 B1 KR 102180702B1
Authority
KR
South Korea
Prior art keywords
substrate
light
intensity distribution
light intensity
stage
Prior art date
Application number
KR1020170165547A
Other languages
English (en)
Korean (ko)
Other versions
KR20180068291A (ko
Inventor
고헤이 마에다
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20180068291A publication Critical patent/KR20180068291A/ko
Application granted granted Critical
Publication of KR102180702B1 publication Critical patent/KR102180702B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020170165547A 2016-12-13 2017-12-05 리소그래피 장치, 물품의 제조 방법, 및 계측 장치 KR102180702B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016241594A JP6916616B2 (ja) 2016-12-13 2016-12-13 リソグラフィ装置、物品の製造方法、および計測装置
JPJP-P-2016-241594 2016-12-13

Publications (2)

Publication Number Publication Date
KR20180068291A KR20180068291A (ko) 2018-06-21
KR102180702B1 true KR102180702B1 (ko) 2020-11-20

Family

ID=62633518

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170165547A KR102180702B1 (ko) 2016-12-13 2017-12-05 리소그래피 장치, 물품의 제조 방법, 및 계측 장치

Country Status (3)

Country Link
JP (1) JP6916616B2 (ja)
KR (1) KR102180702B1 (ja)
CN (1) CN108614392B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7222660B2 (ja) * 2018-10-30 2023-02-15 キヤノン株式会社 ステージ装置、リソグラフィ装置、および物品の製造方法
CN111750774B (zh) * 2019-03-29 2021-09-24 上海微电子装备（集团）股份有限公司 光学测量装置及方法
JP7469864B2 (ja) * 2019-10-21 2024-04-17 キヤノン株式会社 位置決め装置、露光装置、および物品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001241921A (ja) 2000-03-01 2001-09-07 Nippon Electric Glass Co Ltd 板ガラスの寸法測定方法
WO2004079352A1 (ja) 2003-03-04 2004-09-16 Mitsuboshi Diamond Industrial Co. Ltd. 透明基板端面部の検査装置およびその検査方法
JP2010117323A (ja) 2008-11-14 2010-05-27 Nikon Corp 表面検査装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3590916B2 (ja) * 1995-12-28 2004-11-17 株式会社ニコン 位置決め方法
JP4048385B2 (ja) * 1996-08-19 2008-02-20 株式会社ニコン 光学式プリアライメント装置および該プリアライメント装置を備えた露光装置
JP2001194320A (ja) * 2000-01-06 2001-07-19 Advantest Corp 表面状態測定装置及び方法
JP3795820B2 (ja) * 2002-03-27 2006-07-12 株式会社東芝 基板のアライメント装置
KR100516405B1 (ko) * 2003-02-28 2005-09-22 삼성전자주식회사 웨이퍼의 에지 노광 영역 검사 장치
JP4886549B2 (ja) * 2007-02-26 2012-02-29 株式会社東芝 位置検出装置および位置検出方法
DE102009044294A1 (de) * 2009-10-20 2011-05-05 Kla-Tencor Mie Gmbh Koordinatenmessmaschine zur Bestimmung der Lage von Strukturen auf einer Maske
CN102402127B (zh) * 2010-09-17 2014-01-22 上海微电子装备有限公司 一种硅片预对准装置及方法
US9841299B2 (en) * 2014-11-28 2017-12-12 Canon Kabushiki Kaisha Position determining device, position determining method, lithographic apparatus, and method for manufacturing object

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001241921A (ja) 2000-03-01 2001-09-07 Nippon Electric Glass Co Ltd 板ガラスの寸法測定方法
WO2004079352A1 (ja) 2003-03-04 2004-09-16 Mitsuboshi Diamond Industrial Co. Ltd. 透明基板端面部の検査装置およびその検査方法
JP2010117323A (ja) 2008-11-14 2010-05-27 Nikon Corp 表面検査装置

Also Published As

Publication number Publication date
KR20180068291A (ko) 2018-06-21
CN108614392B (zh) 2021-02-05
CN108614392A (zh) 2018-10-02
JP2018097151A (ja) 2018-06-21
JP6916616B2 (ja) 2021-08-11

Similar Documents

Publication Publication Date Title
KR101937009B1 (ko) 임프린트 장치 및 물품의 제조 방법
KR101788371B1 (ko) 검출 장치, 임프린트 장치 및 물품의 제조 방법
KR101894167B1 (ko) 임프린트 장치 및 물품 제조 방법
TWI468880B (zh) 定位系統、微影裝置及器件製造方法
US20110013188A1 (en) Object Alignment Measurement Method and Apparatus
US9639008B2 (en) Lithography apparatus, and article manufacturing method
KR102180702B1 (ko) 리소그래피 장치, 물품의 제조 방법, 및 계측 장치
TWI417679B (zh) 微影裝置及圖案化元件
KR102137986B1 (ko) 계측 장치, 노광 장치 및 물품의 제조 방법
KR101487060B1 (ko) 하전 입자 빔 묘화 장치 및 물품 제조 방법
CN109932876B (zh) 测量装置、平板印刷装置、物品的制造方法以及测量方法
JP6748428B2 (ja) リソグラフィ装置、物品の製造方法、ステージ装置及び計測装置
KR101785075B1 (ko) 이송용 기준 미러를 사용한 웨이퍼 형상 변화값을 검출하는 장치
JP2017198793A (ja) 計測装置、露光装置、デバイス製造方法、及びパターン形成方法
KR102102693B1 (ko) 리소그래피 장치, 패턴 형성 방법 및 물품의 제조 방법
JP2015106604A (ja) ビームの傾き計測方法、描画方法、描画装置、及び物品の製造方法
US11982948B2 (en) Method for determining a center of a radiation spot, sensor and stage apparatus
US20230294351A1 (en) Object alignment method, imprint method, article manufacturing method, detection apparatus, imprint apparatus, mold, and substrate
US20220308468A1 (en) Method for determining a center of a radiation spot, sensor and stage apparatus
KR102555768B1 (ko) 노광 방법, 노광 장치, 물품 제조 방법 및 계측 방법
CN108292111A (zh) 用于在光刻设备中处理衬底的方法和设备
JP7138479B2 (ja) 検出装置、検出方法、リソグラフィ装置および物品製造方法
KR20240031051A (ko) 정보 처리 장치, 정보 처리 방법, 프로그램, 노광 장치, 노광 방법, 및 물품의 제조방법
CN117631467A (zh) 信息处理装置、信息处理方法、存储介质、曝光装置、曝光方法和物品制造方法
JP2010185807A (ja) 表面形状計測装置、表面形状計測方法、露光装置及びデバイス製造方法

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right