KR102173473B1 - Mos-바이폴라 소자 - Google Patents

Mos-바이폴라 소자 Download PDF

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Publication number
KR102173473B1
KR102173473B1 KR1020167004755A KR20167004755A KR102173473B1 KR 102173473 B1 KR102173473 B1 KR 102173473B1 KR 1020167004755 A KR1020167004755 A KR 1020167004755A KR 20167004755 A KR20167004755 A KR 20167004755A KR 102173473 B1 KR102173473 B1 KR 102173473B1
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South Korea
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region
well
trench
well region
semiconductor
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KR1020167004755A
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English (en)
Korean (ko)
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KR20160035029A (ko
Inventor
산카라 마다틸
Original Assignee
에코 세미컨덕터스 리미티드
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    • H01L29/7397—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H01L29/0696—
    • H01L29/1095—
    • H01L29/407—
    • H01L29/66348—
    • H01L29/7813—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H01L2924/13055—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020167004755A 2013-07-23 2014-07-02 Mos-바이폴라 소자 Active KR102173473B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GBGB1313126.3A GB201313126D0 (en) 2013-07-23 2013-07-23 MOS-Bipolar Device
GB1313126.3 2013-07-23
GB1314474.6 2013-08-13
GBGB1314474.6A GB201314474D0 (en) 2013-07-23 2013-08-13 MOS-Bipolar device
PCT/GB2014/052013 WO2015011440A1 (en) 2013-07-23 2014-07-02 Mos-bipolar device

Publications (2)

Publication Number Publication Date
KR20160035029A KR20160035029A (ko) 2016-03-30
KR102173473B1 true KR102173473B1 (ko) 2020-11-03

Family

ID=49119141

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167004755A Active KR102173473B1 (ko) 2013-07-23 2014-07-02 Mos-바이폴라 소자

Country Status (10)

Country Link
US (1) US10170605B2 (https=)
EP (1) EP3025373B1 (https=)
JP (1) JP6495272B2 (https=)
KR (1) KR102173473B1 (https=)
CN (1) CN105706241B (https=)
AU (1) AU2014294820B2 (https=)
CA (1) CA2918848A1 (https=)
ES (1) ES2942334T3 (https=)
GB (3) GB201313126D0 (https=)
WO (1) WO2015011440A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016112721B4 (de) 2016-07-12 2022-02-03 Infineon Technologies Ag n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen
DE102016117264B4 (de) 2016-09-14 2020-10-08 Infineon Technologies Ag Leistungshalbleiterbauelement mit Steuerbarkeit von dU/dt
DE102017107174B4 (de) 2017-04-04 2020-10-08 Infineon Technologies Ag IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT
DE102017124872B4 (de) 2017-10-24 2021-02-18 Infineon Technologies Ag Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit
DE102017124871B4 (de) 2017-10-24 2021-06-17 Infineon Technologies Ag Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung
GB2606383B (en) 2021-05-06 2026-03-25 Eco Semiconductors Ltd A semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040094798A1 (en) * 2002-09-02 2004-05-20 Kabushiki Kaisha Toshiba Semiconductor device
US20090008674A1 (en) * 2007-07-05 2009-01-08 Florin Udrea Double gate insulated gate bipolar transistor
US20120043581A1 (en) * 2010-08-17 2012-02-23 Masaki Koyama Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4761011B2 (ja) * 1999-05-26 2011-08-31 株式会社豊田中央研究所 サイリスタを有する半導体装置及びその製造方法
GB9921068D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Bipolar mosfet device
JP4130356B2 (ja) * 2002-12-20 2008-08-06 株式会社東芝 半導体装置
JP5984282B2 (ja) * 2006-04-27 2016-09-06 富士電機株式会社 縦型トレンチ型絶縁ゲートｍｏｓ半導体装置
JP5634318B2 (ja) * 2011-04-19 2014-12-03 三菱電機株式会社 半導体装置
US8564047B2 (en) 2011-09-27 2013-10-22 Force Mos Technology Co., Ltd. Semiconductor power devices integrated with a trenched clamp diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040094798A1 (en) * 2002-09-02 2004-05-20 Kabushiki Kaisha Toshiba Semiconductor device
US20090008674A1 (en) * 2007-07-05 2009-01-08 Florin Udrea Double gate insulated gate bipolar transistor
US20120043581A1 (en) * 2010-08-17 2012-02-23 Masaki Koyama Semiconductor device

Also Published As

Publication number Publication date
GB201314474D0 (en) 2013-09-25
EP3025373B1 (en) 2022-12-21
JP6495272B2 (ja) 2019-04-03
WO2015011440A1 (en) 2015-01-29
AU2014294820A1 (en) 2016-02-11
US10170605B2 (en) 2019-01-01
AU2014294820B2 (en) 2018-04-05
ES2942334T3 (es) 2023-05-31
CN105706241B (zh) 2019-12-31
KR20160035029A (ko) 2016-03-30
GB201314475D0 (en) 2013-09-25
CN105706241A (zh) 2016-06-22
JP2016527722A (ja) 2016-09-08
CA2918848A1 (en) 2015-01-29
EP3025373A1 (en) 2016-06-01
GB201313126D0 (en) 2013-09-04
US20160155831A1 (en) 2016-06-02

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