KR102172939B1 - 무수나드산 중합체 및 그로부터 유래한 감광성 조성물 - Google Patents

무수나드산 중합체 및 그로부터 유래한 감광성 조성물 Download PDF

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KR102172939B1
KR102172939B1 KR1020197005100A KR20197005100A KR102172939B1 KR 102172939 B1 KR102172939 B1 KR 102172939B1 KR 1020197005100 A KR1020197005100 A KR 1020197005100A KR 20197005100 A KR20197005100 A KR 20197005100A KR 102172939 B1 KR102172939 B1 KR 102172939B1
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hept
bicyclo
composition
methyl
group
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KR20190037268A (ko
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브라이언 냅
셰릴 번즈
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스미토모 베이클리트 컴퍼니 리미티드
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/04—Anhydrides, e.g. cyclic anhydrides
    • C08F222/06—Maleic anhydride
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F234/00—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring
    • C08F234/02—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring in a ring containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D145/00—Coating compositions based on homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic system; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/322—Aqueous alkaline compositions
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
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    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
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    • G03F7/16—Coating processes; Apparatus therefor
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    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020197005100A 2016-07-28 2017-07-28 무수나드산 중합체 및 그로부터 유래한 감광성 조성물 Expired - Fee Related KR102172939B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662367857P 2016-07-28 2016-07-28
US62/367,857 2016-07-28
PCT/US2017/044281 WO2018022952A1 (en) 2016-07-28 2017-07-28 Nadic anhydride polymers and photosensitive compositions derived therefrom

Publications (2)

Publication Number Publication Date
KR20190037268A KR20190037268A (ko) 2019-04-05
KR102172939B1 true KR102172939B1 (ko) 2020-11-03

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US (1) US10591818B2 (enExample)
JP (1) JP6765501B2 (enExample)
KR (1) KR102172939B1 (enExample)
CN (1) CN109476948A (enExample)
TW (1) TWI716619B (enExample)
WO (1) WO2018022952A1 (enExample)

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KR20170053442A (ko) * 2015-11-06 2017-05-16 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
JP2018189738A (ja) * 2017-04-28 2018-11-29 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポジ型感光性シロキサン組成物、およびそれを用いて形成した硬化膜
WO2020037236A1 (en) 2018-08-17 2020-02-20 Massachusetts Institute Of Technology Degradable polymers of a cyclic silyl ether and uses thereof
TW202100575A (zh) 2019-05-31 2021-01-01 美商普羅梅勒斯有限公司 作為光學或3d印刷材料的快速可光固化的多環烯烴組成物
CN110437739B (zh) * 2019-07-15 2021-02-19 淮阴工学院 环氧复合涂料及其制备方法
US12326586B2 (en) 2019-09-20 2025-06-10 3M Innovative Properties Company Low wave-front error optical filter film
WO2021096591A1 (en) * 2019-11-15 2021-05-20 Massachusetts Institute Of Technology Functional oligomers and functional polymers including hydroxylated polymers and conjugates thereof and uses thereof
TWI850509B (zh) * 2019-12-30 2024-08-01 日商住友電木股份有限公司 催化多環烯烴組成物的uv活性衍生物
TWI850512B (zh) * 2019-12-30 2024-08-01 日商住友電木股份有限公司 作為光學材料之uv活性鈀催化多環烯烴聚合物組成物
JP7494805B2 (ja) * 2020-06-25 2024-06-04 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP2023548080A (ja) * 2020-10-30 2023-11-15 プロメラス， エルエルシー 貯蔵寿命が安定し、塊重合可能な改善されたポリシクロオレフィン組成物
EP4284854A1 (en) 2021-02-01 2023-12-06 Massachusetts Institute of Technology Reprocessable compositions
WO2022256399A2 (en) * 2021-06-01 2022-12-08 Massachusetts Institute Of Technology Latent-fluoride containing polymers for triggered degradation
TW202334271A (zh) * 2022-02-18 2023-09-01 美商普羅梅勒斯有限公司 Romp本體聚合及陽離子聚合型組成物用雙觸媒體系
TW202528839A (zh) * 2023-09-29 2025-07-16 美商普羅梅勒斯有限公司 含有不含pfas的多環烯烴聚合物之感光性組成物及由其製成的半導體裝置
TW202528838A (zh) * 2023-09-29 2025-07-16 美商普羅梅勒斯有限公司 含有不含pfas的多環烯烴三元共聚物之感光性組成物及由其製成的半導體裝置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002093263A1 (en) 2001-05-11 2002-11-21 Clariant International Ltd Photoresist composition for deep ultraviolet lithography
JP2004002753A (ja) 2002-03-28 2004-01-08 Toray Ind Inc 樹脂組成物及びそれよりなる絶縁膜、半導体装置、及び有機電界発光素子
CN1828418A (zh) 2006-03-27 2006-09-06 苏州华飞微电子材料有限公司 含硅偶联剂的193nm光刻胶及其成膜树脂
US20120129101A1 (en) 2010-11-24 2012-05-24 Promerus Llc Self-Imageable Film Forming Polymer, Compositions Thereof and Devices and Structures Made Therefrom
US20140322647A1 (en) 2013-04-26 2014-10-30 Sumitomo Bakelite Co., Ltd Photosensitive compositions and applications thereof

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3232417A (en) * 1964-07-27 1966-02-01 C F Butz Engineering Continuous action deflector for conveyors
JPS5818370B2 (ja) * 1973-09-19 1983-04-12 ジェイエスアール株式会社 ノルボルネンジカルボンサンムスイブツルイ ノ キヨウジユウゴウタイ ノ セイゾウホウ
JP2961722B2 (ja) 1991-12-11 1999-10-12 ジェイエスアール株式会社 感放射線性樹脂組成物
US6232417B1 (en) 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
EP0885405B1 (en) 1996-03-07 2005-06-08 Sumitomo Bakelite Co., Ltd. Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
JP3262108B2 (ja) 1998-09-09 2002-03-04 東レ株式会社 ポジ型感光性樹脂組成物
US6235447B1 (en) * 1998-10-17 2001-05-22 Hyundai Electronics Industries Co., Ltd. Photoresist monomers, polymers thereof, and photoresist compositions containing the same
KR100389912B1 (ko) * 1999-12-08 2003-07-04 삼성전자주식회사 지환식 감광성 폴리머 및 이를 포함하는 레지스트 조성물
EP1130468A3 (en) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer and photoresist compositions
JP3952756B2 (ja) 2001-11-29 2007-08-01 日本ゼオン株式会社 感放射線性樹脂組成物及びその利用
JP4675259B2 (ja) * 2005-02-25 2011-04-20 三井化学株式会社 オレフィンの重合方法及び該重合方法で得られる重合体
EP2310431A4 (en) * 2008-08-04 2012-02-08 Firestone Polymers Llc METATHESIC POLYMER ADDITION PRODUCTS AND THEIR PREPARATION
US8753790B2 (en) 2009-07-01 2014-06-17 Promerus, Llc Self-imageable film forming polymer, compositions thereof and devices and structures made therefrom
TWI558783B (zh) * 2010-12-29 2016-11-21 住友電木股份有限公司 用於暫時性黏合的聚合物組成物
JP2014040532A (ja) * 2012-08-23 2014-03-06 Shin Etsu Chem Co Ltd 環状オレフィン付加重合体及びその製造方法
WO2015038412A2 (en) * 2013-09-16 2015-03-19 Promerus, Llc Amine treated maleic anhydride polymers with pendent silyl group, compositions and applications thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002093263A1 (en) 2001-05-11 2002-11-21 Clariant International Ltd Photoresist composition for deep ultraviolet lithography
JP2004002753A (ja) 2002-03-28 2004-01-08 Toray Ind Inc 樹脂組成物及びそれよりなる絶縁膜、半導体装置、及び有機電界発光素子
CN1828418A (zh) 2006-03-27 2006-09-06 苏州华飞微电子材料有限公司 含硅偶联剂的193nm光刻胶及其成膜树脂
US20120129101A1 (en) 2010-11-24 2012-05-24 Promerus Llc Self-Imageable Film Forming Polymer, Compositions Thereof and Devices and Structures Made Therefrom
US20140322647A1 (en) 2013-04-26 2014-10-30 Sumitomo Bakelite Co., Ltd Photosensitive compositions and applications thereof

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