JP6138828B2 - マイクロ電子及び光電子デバイス並びにそのアセンブリ用の熱酸化安定性の側鎖ポリエーテル官能化ポリノルボルネン - Google Patents
マイクロ電子及び光電子デバイス並びにそのアセンブリ用の熱酸化安定性の側鎖ポリエーテル官能化ポリノルボルネン Download PDFInfo
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- JP6138828B2 JP6138828B2 JP2014553343A JP2014553343A JP6138828B2 JP 6138828 B2 JP6138828 B2 JP 6138828B2 JP 2014553343 A JP2014553343 A JP 2014553343A JP 2014553343 A JP2014553343 A JP 2014553343A JP 6138828 B2 JP6138828 B2 JP 6138828B2
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- methyl
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- 238000004377 microelectronic Methods 0.000 title claims description 18
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- 125000005266 diarylamine group Chemical group 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
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- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims description 4
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 4
- KYOZIVFRHLSSKN-UHFFFAOYSA-N 2-[[2-hydroxy-3-[(2-hydroxy-5-methylphenyl)methyl]-5-methylphenyl]methyl]-6-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=C(CC=3C(=C(CC=4C(=CC=C(C)C=4)O)C=C(C)C=3)O)C=C(C)C=2)O)=C1 KYOZIVFRHLSSKN-UHFFFAOYSA-N 0.000 claims description 3
- GQBHYWDCHSZDQU-UHFFFAOYSA-N 4-(2,4,4-trimethylpentan-2-yl)-n-[4-(2,4,4-trimethylpentan-2-yl)phenyl]aniline Chemical compound C1=CC(C(C)(C)CC(C)(C)C)=CC=C1NC1=CC=C(C(C)(C)CC(C)(C)C)C=C1 GQBHYWDCHSZDQU-UHFFFAOYSA-N 0.000 claims description 3
- OPEKHRGERHDLRK-UHFFFAOYSA-N 4-tert-butyl-n-(4-tert-butylphenyl)aniline Chemical compound C1=CC(C(C)(C)C)=CC=C1NC1=CC=C(C(C)(C)C)C=C1 OPEKHRGERHDLRK-UHFFFAOYSA-N 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- WQOQAHAPBRGEAO-UHFFFAOYSA-N 2,6-bis[[2-hydroxy-3-[(2-hydroxy-5-methylphenyl)methyl]-5-methylphenyl]methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=C(CC=3C(=C(CC=4C(=C(CC=5C(=CC=C(C)C=5)O)C=C(C)C=4)O)C=C(C)C=3)O)C=C(C)C=2)O)=C1 WQOQAHAPBRGEAO-UHFFFAOYSA-N 0.000 claims description 2
- NIQLOLNJWXWZHX-UHFFFAOYSA-N 2-(5-bicyclo[2.2.1]hept-2-enylmethyl)-1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound C1C2C(CC(O)(C(F)(F)F)C(F)(F)F)CC1C=C2 NIQLOLNJWXWZHX-UHFFFAOYSA-N 0.000 claims description 2
- VZKXQQSFNFJFSC-UHFFFAOYSA-N 2-[[2-hydroxy-3-[(2-hydroxy-3,5-dimethylphenyl)methyl]-5-methylphenyl]methyl]-4,6-dimethylphenol Chemical compound CC1=CC(C)=C(O)C(CC=2C(=C(CC=3C(=C(C)C=C(C)C=3)O)C=C(C)C=2)O)=C1 VZKXQQSFNFJFSC-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims 4
- BEHBBKCBARHMJQ-UHFFFAOYSA-N 5-(2-phenylethyl)bicyclo[2.2.1]hept-2-ene Chemical compound C1C(C=C2)CC2C1CCC1=CC=CC=C1 BEHBBKCBARHMJQ-UHFFFAOYSA-N 0.000 claims 3
- MAQOZOILPAMFSW-UHFFFAOYSA-N 2,6-bis[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=C(CC=3C(=CC=C(C)C=3)O)C=C(C)C=2)O)=C1 MAQOZOILPAMFSW-UHFFFAOYSA-N 0.000 claims 2
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- RVAGRRUWQVQVOJ-UHFFFAOYSA-N 2-[[2-hydroxy-3-[[2-hydroxy-3-[(2-hydroxy-3,5-dimethylphenyl)methyl]-5-methylphenyl]methyl]-5-methylphenyl]methyl]-4,6-dimethylphenol Chemical compound CC1=CC(C)=C(O)C(CC=2C(=C(CC=3C(=C(CC=4C(=C(C)C=C(C)C=4)O)C=C(C)C=3)O)C=C(C)C=2)O)=C1 RVAGRRUWQVQVOJ-UHFFFAOYSA-N 0.000 claims 1
- WGIJGSLQJSMKAH-UHFFFAOYSA-N 2-benzyl-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C=CC=CC=2)=C1 WGIJGSLQJSMKAH-UHFFFAOYSA-N 0.000 claims 1
- UDRXMPPQQMNOIS-UHFFFAOYSA-N 5-(4-phenylbutyl)bicyclo[2.2.1]hept-2-ene Chemical compound C1C(C=C2)CC2C1CCCCC1=CC=CC=C1 UDRXMPPQQMNOIS-UHFFFAOYSA-N 0.000 claims 1
- VTWPBVSOSWNXAX-UHFFFAOYSA-N 5-decylbicyclo[2.2.1]hept-2-ene Chemical compound C1C2C(CCCCCCCCCC)CC1C=C2 VTWPBVSOSWNXAX-UHFFFAOYSA-N 0.000 claims 1
- FYGUSUBEMUKACF-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carboxylic acid Chemical compound C1C2C(C(=O)O)CC1C=C2 FYGUSUBEMUKACF-UHFFFAOYSA-N 0.000 claims 1
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- 238000011160 research Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- CQRYARSYNCAZFO-UHFFFAOYSA-N salicyl alcohol Chemical compound OCC1=CC=CC=C1O CQRYARSYNCAZFO-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 150000003568 thioethers Chemical group 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
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Description
[0001]本出願は、2012年1月16日出願の仮特許出願第61/586950号、及び2012年2月22日出願の仮特許出願第61/601752号(これらの全ての内容を参照として本明細書中に包含する)に対する優先権の利益を主張する。
技術分野
[0002]本発明による幾つかの態様は、概して、マイクロ電子及び/又は光電子デバイス並びにそのアセンブリを形成するために有用なポリノルボルネン(PNB)組成物に関し、より具体的には、ポリエーテル官能化されているノルボルネンタイプの繰り返し単位を有するPNBを包含し、かかるPNBはポリエーテル官能化の熱酸化連鎖分解に対して抵抗性である組成物に関する。
[0003]有機ポリマー材料は、マイクロ電子及び光電子産業において、種々の用途のために益々用いられている。例えば、かかる有機ポリマー材料の用途としては、層間絶縁体、再分配層、応力緩衝層、平滑化又は平坦化層、マイクロ電子及び光電子デバイス用のα粒子バリアが挙げられる。かかるデバイスとしては、微小電気機械システム及び光電気機械システム、並びにかかるシステムを形成するためのデバイス及びデバイス部品の直接接着剤結合が挙げられる。かかる有機ポリマー材料が感光性であり、したがって自己画像形成性である場合には、これらはかかる層及びそれから製造される構造体を使用するために必要な処理工程の数を減少させるという更なる有利性を与える。
図面の簡単な説明
[0006]下記において、添付の図面を参照して本発明による幾つかの態様を説明する。
[0012]本発明による幾つかの態様は、ノルボルネンタイプのポリマー、かかるポリマーを含む自己画像形成性組成物、並びに、かかるポリマー及び組成物を用いて形成することができる膜、層、構造体、デバイス、又はアセンブリに関する。かかる態様の幾つかは、それから形成される膜を像様露光し、水性塩基現像剤溶液を用いてかかる画像を現像した後に、ポジティブ型の画像を与えることができる自己画像形成性組成物を包含する。一方、かかる態様の他のものは、それから形成される膜を像様露光し、適当な溶剤性の現像剤を用いてかかる画像を現像した後に、ネガティブ型の画像を与えることができる自己画像形成性組成物を包含する。
(ii)4未満の誘電率;
(iii)150℃にて100時間のHTS安定性試験におけるポリマーの破断伸び(ETB)の安定性によって測定される良好な酸化安定性;
(iv)適当な熱圧着結合プロセスにおけるガラス及び又はシリコンウエハに対する直接接触接着;及び
(v)硬化ポリマー膜の低弾性率又は内部応力。
(b)6未満の誘電率;
(c)適当なレベルの水蒸気に対する透過性;
(d)適当な熱圧着結合プロセスにおけるガラス及び/又はシリコンに対する直接接触接着;及び
(e)硬化ポリマー膜の低弾性率又は内部応力。
によって表される基である少なくとも2つの異なるタイプの繰り返し単位の1番目を含む。
にしたがう懸垂基を有する繰り返し単位を含ませることができる。
実施例M1: 5−(3−メトキシプロパノキシ)メチル−2−ノルボルネン(NB−3−MPM)の製造:
実施例P1: 70/30のNBTON/MGENB:
[0083]適当な寸法の反応容器を乾燥し、N2でパージして空気及び水の混入を最小にした。次に、1,189.1gのトルエン、65.6gのMEK、245.6gのNBTON(1.09モル)、及び83.8gのMGENB(0.47モル)を容器に充填した。45℃に加熱しながら溶液に乾燥N2流を30分間通すことによって、反応媒体から酸素をパージした。パージが完了した後、56.4gのトルエン中に溶解した6.26g(0.013モル)の(トルエン)ビス(ペンタフルオロフェニル)ニッケル(NiArf)を反応容器中に注入した。反応器温度を1℃/分の速度で60℃まで上昇させ、反応混合物を3時間撹拌した。
[0086]実施例P9: 以下のようにして、HFANB、EPEsNB、及びNBTONから誘導される繰り返し単位を含むポリマーを調製した。適当な寸法の反応容器を乾燥し、N2でパージして空気及び水の混入を最小にした。次に、トルエン(992g)、DME(116g)、HFANB(148g、0.54モル)、EPEsNB(20.7g、0.11モル)、及びNBTON(61.9g、0.27モル)を容器に充填した。45℃に加熱しながら溶液に乾燥N2流を30分間通すことによって、反応媒体から酸素をパージした。別の容器内において、反応容器中に計量投入するための更なるEPEsNB(14.2g、0.073モル)及びNBTON(46.7g、0.16モル)を混合し、N2でパージした。パージが完了した後、60.5mLのトルエン中に溶解した5.82g(0.012モル)のビス(トルエン)ビス(ペルフルオロフェニル)ニッケル(NiArf)を、3種類全てのモノマーを含む反応容器中に注入した。同時に、モノマーの計量供給分を、未反応のモノマーを重合時間(3時間)のあいだ一定レベルに維持するように意図される速度で加えた。
CIS/RDL配合物: 以下の配合物は表2のポリマーP1〜P8に適している
実施例F1〜F8:
[0089]樹脂100部あたりの部数(pphr)として表した特定量の添加剤(Rhodorsil PI 2074、CPTX、フェノチアジン、Si−75、AO−80、及びNaugard 445)を有するMAK(F1)又はPGMEA(F2〜F8)中のポリマーP2の一連の55重量%溶液(F1〜F8、以下の表4に示す)を、適当な寸法の琥珀色のHDPEビン内で、適当な量の、F1に関してはMAK、F2〜F8に関してはPGMEAと混合した。35psiの圧力下で孔径1μmのナイロンディスクフィルターを通してポリマー溶液を濾過することによって粒子混入物質を除去し、濾過したポリマー溶液を低粒子HDPEの琥珀色のビンに採取し、得られた溶液を5℃にて貯蔵した。
[0090]配合物F9: PGMEA(31.3g)、TrisP−3M6C−2(5)−201(3.10g)、BY−116−15(1.86g)、SIB−1832(1.25g)、Denacol EX−321L(0.62g)、Si−75(0.38g)、Naugard 445(1.24g)、AO−80(0.81g)、及びPGMEA(9.82g)中のポリマーP1の57.3重量%溶液を、適当な寸法の琥珀色のHDPEビン内で混合した。混合物を16時間揺動させて均一な溶液を生成させた。35psiの圧力下で孔径0.2μmのPTFEディスクフィルターを通してポリマー溶液を濾過することによって粒子混入物質を除去し、濾過したポリマー溶液を低粒子HDPEの琥珀色のビンに採取し、得られた溶液を−5℃にて貯蔵した。
閾値エネルギー(Eth)の測定:
[0094]配合物F9〜F16を、それぞれスピンコートによって直径200mmのシリコンウエハ(厚さ:725μm)に施した。次に、基板を100℃のホットプレート上に300秒間配置して、厚さ約10μmのポリマー膜を与えた。次に、50〜730mJ/cm2の範囲の露光エネルギーを用いることによって、それぞれのポリマー膜を像様露光した。次に、0.26N TMAH中への2回の30秒間浸漬を有するパドル現像法を用いて、それぞれの膜を現像した。現像プロセスの後、脱イオン水を5秒間噴霧することによってそれぞれのウエハをすすぎ、次に3000rpmで15秒間スピンさせることによって乾燥した。次にそれぞれの膜を評価し、100μm2のビアホールを与えるのに必要な閾値エネルギーを求めた。配合物F9〜F16の具体的な組成を表5に提供する。以下の表5Aに示されるように、配合物F11〜F13及びF16のそれぞれは配合物F10よりも低い閾値エネルギーを示し、これにより実験ヒンダードフェノール添加剤の幾つかは画像形成性ポリマー膜の観察される感度を増加させたことが示される。
[0096]ASTM−E96、手順B(水及び乾燥剤)にしたがい、次のようにして水蒸気透過データを集めた。約100mLの脱イオン水をそれぞれの水蒸気透過装置に加えて、レベルが、試験片が配される箇所の1/4インチ内になるようにした。次に、それぞれの試験片を装置上に載置し、きざみ付き止めネジ及びガスケットを用いて固定した。
WVT=(G/t)1/A
を用いて、それぞれの試験片に関する水蒸気透過(WVT)値を計算した。
[0100]例えばポリマーP1及びP2のコポリマーにおけるNBTON繰り返し単位側鎖の熱硬化中の安定剤としてのNG445添加剤の有効性を確認するために、一連の配合物のF18〜F30を調製した。配合物の実施例は、配合物F10〜F16に関して上記のようにして調製したが、配合物F18〜F24はポリマーP1を含み、配合物F25〜F31はポリマーP2を含む。更にそれぞれの配合物に関し、それぞれの配合物中に含ませたそれぞれの添加剤の量を以下の表7に示す。
[0102]上記の配合物F1に関して記載したようにして配合物F32〜F43を調製した。それぞれの実施例に関する具体的な基ポリマー及び配合物を表8に示す。
[0106]配合物実施例F44〜F53に関しては、ポリマー組成物はPGMEAキャリア溶媒中に溶解しているポリマーP9を含む。配合物実施例F55及びF56に関しては、ポリマー組成物はPGMEAキャリア溶媒中に溶解しているポリマーP14を含む。配合物F48〜F52は、表11に示すP9、AO−80、及びジアリールアミンを含むポリマー組成物である。
CISキャビティパッケージ:
[0114]125mmのSiO2ウエハをMarch CS−1701反応性イオンエッチ(RIE装置)内に配置し、混合酸素−アルゴンプラズマ(300ミリトル、300W、30秒)で表面を清浄化した。CEE 100CBXスピンコート装置を用いて、配合物F37の8mLのアリコートを、125mmのSiウエハ(厚さ625μm)の上に1200rpmで60秒間、次に3000rpmで10秒間スピンキャストした。膜を、ホットプレート上において近接モードで100℃にて5分間ベーク処理することによって乾燥した。ポリマー膜を、500μm2のビア開口のグリッドパターンを有するネガティブ型のマスクを通して、780mJ/cm2の線量の365nmUV光に像様露光し、次にホットプレート上において90℃で更に4分間ベーク処理した。ウエハを150rpmで回転させながらウエハ上にMAK溶媒を21秒間噴霧することによって、ポリマー膜の非露光部分を現像した。次に、イソプロパノールを5秒間噴霧することによってポリマー膜をすすいだ。ポリマー膜を空気中で18時間乾燥した。
[0116]100mmのガラスウエハをPiranha溶液で15分間清浄化することによって予備処理し、次に脱イオン水ですすぎ、結合させる前に乾燥させた。厚さ50μmのポリマーダムでコートした125mmのSiウエハを、EVG501結合器の底部チャック上に配置した。4インチのガラスウエハを5インチのコートしたウエハの上面上に配置し、20Nの力を加えてガラスウエハが浮き上がるのを抑止した。チャンバーを、真空に続いて窒素パージの3回のサイクルにかけた。装置を密閉し、チャンバーを排気した。6000Nの結合力(約1.0MPaの結合圧力)を加えた。頂部及び底部のチャックの両方に関して温度を200℃に上昇させた。6000Nの結合力及び200℃の結合温度を30分間維持した。チャンバーを室温に冷却し、圧力を解除し、ウエハを取り出した。結合したウエハを、窒素下において180℃で120分間硬化させた。
[0117]125mmのSiO2ウエハをMarch CS−1701反応性イオンエッチ(RIE装置)内に配置し、混合酸素−アルゴンプラズマ(300ミリトル、300W、30秒)で表面を清浄化した。CEE 100CBXスピンコート装置を用いて、商業的に入手できるエポキシド接着剤の8mLのアリコートを、125mmのSiウエハ(厚さ625μm)の上に1600rpmで30秒間スピンキャストした。15秒間のPGMEA噴霧を用いてエッジビードを除去した。膜を、ホットプレート上において近接モードで80℃にて2分間ベーク処理することによって乾燥した。ポリマー膜を、500μm2のビア開口のグリッドパターンを有するネガティブ型のマスクを通して、250mJ/cm2の線量の365nmUV光に像様露光し、次にホットプレート上において90℃で更に2分間ベーク処理した。ウエハを僅かに振盪させながらPGMEA溶媒の浴中に5分間浸漬することによって、ポリマー膜の非露光部分を現像した。次に、イソプロパノールを5秒間噴霧することによってポリマー膜をすすいだ。ポリマー膜を空気中で18時間乾燥した。
[0120]配合物F9を、スピンコートによって直径200mmのシリコンウエハ(厚さ:725μm)に施した。次に、基板を100℃のホットプレート上に300秒間配置して、11.0μmのみかけ厚さのポリマー膜を与えた。その後、MA−8マスクアライナ(Suss Microtec AG)を用い、マスク部材を用いないで、樹脂層を25mW/cm2の露光強度で40秒間フラッド露光にかけた。フラッド露光の後、ウエハをホットプレート上において150℃で10分間ベーク処理した。
[0127]配合物F9、並びに2種類の商業的に入手できる比較ポリマー:比較ポリマー1(CP1)及び比較ポリマー2(CP2)を用いて、再分配層デバイスを製造した。それぞれの樹脂に関して合計で3つのデバイスウエハを製造した。デバイスに関する累積データを以下の表14に示す。表中において、ソフトベーク(SB)、露光後ベーク(PEB)、及び硬化のデータは、℃で表す温度、分で表す時間、mJ/cm2で表す露光量、及びΩで表す抵抗を与えている。
Claims (11)
- 再分配層(RDL)構造体、チップスタック構造体、CMOSイメージセンサーダム構造体のうちの1以上を含むマイクロ電子又は光電子デバイスであって、かかる構造体はポジ型の自己画像形成性組成物を含み、該組成物は、式A:
にしたがうノルボルネンタイプのモノマーから誘導される繰り返し単位を有する熱酸化安定化ポリマー、並びに
2,2’−((2−ヒドロキシ−5−メチル−1,3−フェニレン)ビス(メチレン))ビス(4−メチルフェノール)、
6,6’−メチレンビス(2−(2−ヒドロキシ−5−メチルベンジル)−4−メチルフェノール)、
6,6’−(2−ヒドロキシ−5−メチル−1,3−フェニレン)ビス(メチレン)ビス(2−(2−ヒドロキシ−5−メチルベンジル)−4−メチルフェノール)、
6,6’−メチレンビス(2−(2−ヒドロキシ−3,5−ジメチルベンジル)−4−メチルフェノール)、及び
6,6’−(2−ヒドロキシ−5−メチル−1,3−フェニレン)ビス(メチレン)ビス(2,4−ジメチルフェノール)、
から成る群より選択される1以上のフェノール系酸化防止剤;及び
N,N’−ジ−2−ナフチル−p−フェニレンジアミン、
ビス(4−(tert−ブチル)フェニル)アミン、
ビス(4−(2−フェニルプロパン−2−イル)フェニル)アミン、
ビス(4−(2,4,4−トリメチルペンタン−2−イル)フェニル)アミン、及び
ビス(4−(2,4,4−トリメチルペンチル)フェニル)アミン、
から成る群より選択される1以上のジアリールアミン相乗剤、
を含む添加剤パッケージ、
を含み、ここで、酸化防止剤及び相乗剤はそれぞれポリマー100部あたり3〜10部の量で存在する、マイクロ電子又は光電子デバイス。 - 相乗剤が、ビス(4−(tert−ブチル)フェニル)アミン又はビス(4−(2−フェニルプロパン−2−イル)フェニル)アミンのうちの1以上であり、フェノール系酸化防止剤が、2,2’−((2−ヒドロキシ−5−メチル−1,3−フェニレン)ビス(メチレン))ビス(4−メチルフェノール)又は6,6’−メチレンビス(2−(2−ヒドロキシ−5−メチルベンジル)−4−メチルフェノール)のうちの1以上である、請求項1に記載のマイクロ電子又は光電子デバイス。
- 相乗剤がビス(4−(2−フェニルプロパン−2−イル)フェニル)アミンであり、フェノール系酸化防止剤が2,2’−((2−ヒドロキシ−5−メチル−1,3−フェニレン)ビス(メチレン))ビス(4−メチルフェノール)である、請求項2に記載のマイクロ電子又は光電子デバイス。
- 式Aにしたがうノルボルネンタイプのモノマーが、トリオキサノナンノルボルネン(NBTON)又はテトラオキサドデカンノルボルネン(NBTODD)である、請求項1〜3のいずれかに記載のマイクロ電子又は光電子デバイス。
- 熱酸化安定化ポリマーが、ノルボルネニル−2−トリフルオロメチル−3,3,3−トリフルオロプロパン−2−オール(HFANB)、ノルボルネンメチルグリシジルエーテル(MGENB)、5−デシルビシクロ[2.2.1]ヘプト−2−エン(DecNB)、5−フェネチルビシクロ[2.2.1]ヘプト−2−エン(PENB)、5−フェンブチルビシクロ[2.2.1]ヘプト−2−エン(PBNB)、エチル3−(ビシクロ[2.2.1]ヘプト−2−エン−2−イル)プロパノエート(EPEsNB)、2−(6−(ビシクロ[2.2.1]ヘプト−5−エン−2−イル)ヘキシル)オキシラン(EONB)、ビシクロ[2.2.1]ヘプト−5−エン−2−カルボン酸(酸NB)、及びノルボルネニルプロパン酸(NBEtCOOH)から選択される1種類以上のノルボルネンタイプのモノマーから誘導される繰り返し単位を更に含む、請求項4に記載のマイクロ電子又は光電子デバイス。
- デバイスがCMOSイメージセンサーダム構造体を含む、請求項2に記載のマイクロ電子又は光電子デバイス。
- 熱酸化安定化ポリマーの繰り返し単位が、NBTON、NBTODD、PENB、PBNB、EONB、DecNB、及びMGENBから選択される2種類以上のモノマーから誘導される、請求項6に記載のCMOSイメージセンサーダム構造体。
- デバイスがチップスタック構造体を含む、請求項2に記載のマイクロ電子又は光電子デバイス。
- 熱酸化安定化ポリマーの繰り返し単位が、NBTON、NBTODD、HFANB、EPEsNB、及びNBCOOTMSから選択される2種類以上のモノマーから誘導される、請求項8に記載のチップスタック構造体。
- デバイスが再分配層(RDL)構造体を含む、請求項2に記載のマイクロ電子又は光電子デバイス。
- 熱酸化安定化ポリマーの繰り返し単位が、NBTON、NBTODD、HFANB、DecNB、EONB、EPEsNB、NBCOOTMS、及びMGENBから選択される2種類以上のモノマーから誘導される、請求項10に記載の再分配層(RDL)構造体。
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CN102471261B (zh) * | 2009-06-30 | 2014-10-29 | 日本瑞翁株式会社 | 二芳基胺化合物、以及抗老化剂、聚合物组合物、橡胶交联物及其成型品、以及二芳基胺化合物的制备方法 |
US20110028621A1 (en) | 2009-07-30 | 2011-02-03 | E. I. Du Pont De Nemours And Company | Heat aging resistant polyamide compositions including polyhydroxy polymers |
US8580477B2 (en) | 2009-09-21 | 2013-11-12 | Promerus Llc | Aqueous base-developable negative-tone films based on functionalized norbornene polymers |
JP2011075927A (ja) * | 2009-09-30 | 2011-04-14 | Fujifilm Corp | 光学フィルムとその製造方法、偏光板、光学補償フィルムおよび液晶表示装置 |
WO2011065546A1 (ja) * | 2009-11-30 | 2011-06-03 | 日立化成工業株式会社 | 感光性樹脂組成物、感光性樹脂ワニス、感光性樹脂フィルム、及び感光性樹脂硬化物 |
JP5728790B2 (ja) * | 2011-07-14 | 2015-06-03 | 住友ベークライト株式会社 | 自己現像層形成ポリマーおよびその組成物 |
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US9425404B2 (en) | 2016-08-23 |
KR101907651B1 (ko) | 2018-10-15 |
US20130181199A1 (en) | 2013-07-18 |
CN104221176A (zh) | 2014-12-17 |
WO2013109529A1 (en) | 2013-07-25 |
JP2015515739A (ja) | 2015-05-28 |
TW201348274A (zh) | 2013-12-01 |
US20160319060A1 (en) | 2016-11-03 |
CN104221176B (zh) | 2017-03-01 |
TWI591083B (zh) | 2017-07-11 |
SG11201403550YA (en) | 2014-09-26 |
KR20140127221A (ko) | 2014-11-03 |
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