KR102167485B1 - 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 - Google Patents

마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 Download PDF

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Publication number
KR102167485B1
KR102167485B1 KR1020130107210A KR20130107210A KR102167485B1 KR 102167485 B1 KR102167485 B1 KR 102167485B1 KR 1020130107210 A KR1020130107210 A KR 1020130107210A KR 20130107210 A KR20130107210 A KR 20130107210A KR 102167485 B1 KR102167485 B1 KR 102167485B1
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KR
South Korea
Prior art keywords
substrate
resist
film
mask blank
manufacturing
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KR1020130107210A
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English (en)
Korean (ko)
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KR20140035253A (ko
Inventor
미쯔루 곤도
유우스께 혼마
미쯔히로 시라꾸라
미쯔히사 히라이데
히로시 시로또리
Original Assignee
호야 가부시키가이샤
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Publication of KR20140035253A publication Critical patent/KR20140035253A/ko
Application granted granted Critical
Publication of KR102167485B1 publication Critical patent/KR102167485B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Structural Engineering (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
KR1020130107210A 2012-09-13 2013-09-06 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 KR102167485B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-201925 2012-09-13
JP2012201925 2012-09-13

Publications (2)

Publication Number Publication Date
KR20140035253A KR20140035253A (ko) 2014-03-21
KR102167485B1 true KR102167485B1 (ko) 2020-10-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130107210A KR102167485B1 (ko) 2012-09-13 2013-09-06 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법

Country Status (3)

Country Link
JP (1) JP6251524B2 (zh)
KR (1) KR102167485B1 (zh)
TW (1) TWI619143B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016057578A (ja) * 2014-09-12 2016-04-21 信越化学工業株式会社 フォトマスクブランク
JP6375269B2 (ja) * 2015-07-01 2018-08-15 信越化学工業株式会社 無機材料膜、フォトマスクブランク、およびフォトマスクの製造方法
KR102273801B1 (ko) * 2017-02-27 2021-07-06 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법
JP7063075B2 (ja) * 2017-04-17 2022-05-09 Ａｇｃ株式会社 Ｅｕｖ露光用反射型マスクブランク、および反射型マスク
CN115280237A (zh) * 2020-03-17 2022-11-01 大日本印刷株式会社 光掩模坯料和光掩模
CN115145108B (zh) * 2022-09-05 2022-12-02 上海传芯半导体有限公司 Euv级衬底、euv掩模基版、euv掩模版及其制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100818674B1 (ko) 2007-02-07 2008-04-02 주식회사 에스앤에스텍 블랭크 마스크의 레지스트 코팅방법 및 이를 이용하여제조된 블랭크 마스크 및 포토마스크

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JPH0429215A (ja) 1990-05-25 1992-01-31 Nippon Telegr & Teleph Corp <Ntt> 色識別機能付きコンタクトレンズおよびその製造方法
JPH04349969A (ja) * 1991-05-28 1992-12-04 Sharp Corp スピン式コーティング装置
JPH04349970A (ja) * 1991-05-29 1992-12-04 Canon Inc スピンコーティング方法及びスピンコーティング装置
JPH09153453A (ja) * 1995-09-28 1997-06-10 Dainippon Screen Mfg Co Ltd 処理液供給装置
TW432520B (en) * 1997-03-31 2001-05-01 Tokyo Electron Ltd Photoresist coating method and apparatus
TW339878U (en) * 1997-09-13 1998-09-01 Defence Dept Chung Shan Inst Embedded thick-light impedance coating system
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JP4629396B2 (ja) * 2003-09-29 2011-02-09 Ｈｏｙａ株式会社 マスクブランクの製造方法及び転写マスクの製造方法
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JP2007058200A (ja) * 2005-07-28 2007-03-08 Hoya Corp マスクブランクの製造方法及び露光用マスクの製造方法
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100818674B1 (ko) 2007-02-07 2008-04-02 주식회사 에스앤에스텍 블랭크 마스크의 레지스트 코팅방법 및 이를 이용하여제조된 블랭크 마스크 및 포토마스크

Also Published As

Publication number Publication date
JP2014074902A (ja) 2014-04-24
KR20140035253A (ko) 2014-03-21
TW201419378A (zh) 2014-05-16
TWI619143B (zh) 2018-03-21
JP6251524B2 (ja) 2017-12-20

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