KR102160321B1 - 베어 칩 다이 본딩 방법 - Google Patents

베어 칩 다이 본딩 방법 Download PDF

Info

Publication number
KR102160321B1
KR102160321B1 KR1020157015349A KR20157015349A KR102160321B1 KR 102160321 B1 KR102160321 B1 KR 102160321B1 KR 1020157015349 A KR1020157015349 A KR 1020157015349A KR 20157015349 A KR20157015349 A KR 20157015349A KR 102160321 B1 KR102160321 B1 KR 102160321B1
Authority
KR
South Korea
Prior art keywords
connection pad
pad structure
bonding material
micro
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157015349A
Other languages
English (en)
Korean (ko)
Other versions
KR20150106875A (ko
Inventor
에스커 꽁스탕 피터 스미츠
샌딥 메논 페린체리
예룬 반 덴 브란드
라제쉬 만담파람빌
하르만너스 프란치스코 마리아 스쿠
Original Assignee
네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오
아이엠이씨 브이제트더블유
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오, 아이엠이씨 브이제트더블유 filed Critical 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오
Publication of KR20150106875A publication Critical patent/KR20150106875A/ko
Application granted granted Critical
Publication of KR102160321B1 publication Critical patent/KR102160321B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
    • B23K35/262Sn as the principal constituent
    • H01L23/49816
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H01L23/4985
    • H01L24/11
    • H01L24/13
    • H01L24/16
    • H01L24/73
    • H01L24/81
    • H01L24/83
    • H01L24/92
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00Packaging processes not covered by the other groups of this subclass
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688Flexible insulating substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/011Apparatus therefor
    • H10W72/0112Apparatus for manufacturing bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01204Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01212Manufacture or treatment of bump connectors, dummy bumps or thermal bumps at a different location than on the final device, e.g. forming as prepeg
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/013Manufacture or treatment of die-attach connectors
    • H10W72/01304Manufacture or treatment of die-attach connectors using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/013Manufacture or treatment of die-attach connectors
    • H10W72/01321Manufacture or treatment of die-attach connectors using local deposition
    • H10W72/01325Manufacture or treatment of die-attach connectors using local deposition in solid form
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07141Means for applying energy, e.g. ovens or lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07237Techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07335Applying EM radiation, e.g. induction heating or using a laser
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • H10W72/225Bumps having a filler embedded in a matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/247Dispositions of multiple bumps
    • H10W72/248Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/253Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/331Shapes of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/331Shapes of die-attach connectors
    • H10W72/332Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/341Dispositions of die-attach connectors, e.g. layouts
    • H10W72/344Dispositions of die-attach connectors, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/856Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/012Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)
KR1020157015349A 2012-11-09 2013-11-08 베어 칩 다이 본딩 방법 Active KR102160321B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12192091.2A EP2731126A1 (en) 2012-11-09 2012-11-09 Method for bonding bare chip dies
EP12192091.2 2012-11-09
PCT/NL2013/050800 WO2014073963A1 (en) 2012-11-09 2013-11-08 Method for bonding bare chip dies

Publications (2)

Publication Number Publication Date
KR20150106875A KR20150106875A (ko) 2015-09-22
KR102160321B1 true KR102160321B1 (ko) 2020-09-28

Family

ID=47216108

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157015349A Active KR102160321B1 (ko) 2012-11-09 2013-11-08 베어 칩 다이 본딩 방법

Country Status (7)

Country Link
US (1) US9859247B2 (https=)
EP (2) EP2731126A1 (https=)
JP (1) JP6283679B2 (https=)
KR (1) KR102160321B1 (https=)
CN (1) CN104854686B (https=)
TW (1) TWI674654B (https=)
WO (1) WO2014073963A1 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2471568B1 (es) * 2012-11-22 2015-08-21 Abengoa Solar New Technologies S.A. Procedimiento para la creación de contactos eléctricos y contactos así creados
TWI561325B (en) * 2014-08-01 2016-12-11 Au Optronics Corp Display module manufacturing method and display module
US10242892B2 (en) 2014-10-17 2019-03-26 Intel Corporation Micro pick and bond assembly
CN107849687B (zh) * 2015-07-09 2020-01-14 奥博泰克有限公司 对激光诱导正向转移喷射角度的控制
DE102016103324A1 (de) * 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Videowand-Modul und Verfahren zum Herstellen eines Videowand-Moduls
US9916989B2 (en) * 2016-04-15 2018-03-13 Amkor Technology, Inc. System and method for laser assisted bonding of semiconductor die
WO2017188125A1 (ja) * 2016-04-27 2017-11-02 セイコーエプソン株式会社 実装構造体、超音波デバイス、超音波探触子、超音波装置、及び電子機器
US10032827B2 (en) * 2016-06-29 2018-07-24 Applied Materials, Inc. Systems and methods for transfer of micro-devices
CA3043791A1 (en) * 2016-11-23 2018-05-31 Institut National De La Recherche Scientifique Method and system of laser-driven impact acceleration
CN108346640B (zh) * 2017-01-25 2020-02-07 华邦电子股份有限公司 半导体结构及其制作方法
US11201077B2 (en) 2017-06-12 2021-12-14 Kulicke & Soffa Netherlands B.V. Parallel assembly of discrete components onto a substrate
JP6720333B2 (ja) 2017-06-12 2020-07-08 ユニカルタ・インコーポレイテッド 基板上に個別部品を並列に組み立てる方法
WO2018227453A1 (en) * 2017-06-15 2018-12-20 Goertek Inc. Method for transferring micro-light emitting diodes, micro-light emitting diode device and electronic device
US10163773B1 (en) 2017-08-11 2018-12-25 General Electric Company Electronics package having a self-aligning interconnect assembly and method of making same
CN109994413A (zh) * 2017-12-29 2019-07-09 南昌欧菲显示科技有限公司 微型元件巨量转移方法
TWI688317B (zh) * 2018-10-31 2020-03-11 台灣愛司帝科技股份有限公司 發光二極體晶片的固接方法及固接裝置
CN113690149A (zh) * 2020-05-16 2021-11-23 佛山市国星光电股份有限公司 一种芯片键合结构、方法及设备
US11627667B2 (en) * 2021-01-29 2023-04-11 Orbotech Ltd. High-resolution soldering
CN115702488A (zh) * 2020-06-04 2023-02-14 奥宝科技有限公司 高分辨率焊接
US20220347778A1 (en) * 2020-06-28 2022-11-03 Orbotech Ltd. Laser Printing of Solder Pastes
WO2022063431A1 (en) * 2020-09-22 2022-03-31 Kulicke & Soffa Netherlands B.V. Reusable die catch materials, reusable die release materials, related die transfer systems, and methods of using the same
CN113451274B (zh) * 2020-10-28 2022-08-05 重庆康佳光电技术研究院有限公司 Led芯片组件、显示面板及制备方法
US11631650B2 (en) * 2021-06-15 2023-04-18 International Business Machines Corporation Solder transfer integrated circuit packaging
DE102021119155A1 (de) * 2021-07-23 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum aufbringen eines elektrischen verbindungsmaterials oder flussmittels auf ein bauelement
CN116072794A (zh) * 2021-11-02 2023-05-05 重庆康佳光电技术研究院有限公司 显示面板修补方法及系统
TW202343603A (zh) * 2022-02-18 2023-11-01 日商迪睿合股份有限公司 連接結構體之製造方法及單片化接著膜之轉印方法
IT202200009839A1 (it) * 2022-05-12 2023-11-12 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
CN117059497B (zh) * 2022-05-12 2026-02-27 意法半导体股份有限公司 制造半导体设备的方法和对应的半导体设备
CN115579440B (zh) * 2022-12-09 2023-07-18 惠科股份有限公司 Led芯片、刷料装置及led芯片的刷料固晶方法
CN116364561B (zh) * 2023-06-01 2023-09-08 湖北三维半导体集成创新中心有限责任公司 键合方法及键合结构
US20250011166A1 (en) * 2023-07-03 2025-01-09 Massachusetts Institute Of Technology Additive manufacturing using bonding of voxels and related systems, devices, and articles

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237279A (ja) * 2000-02-23 2001-08-31 Hitachi Ltd 半導体装置及びそれを用いた電子装置
WO2012107556A2 (en) * 2011-02-11 2012-08-16 Henkel Ag & Co. Kgaa Electrically conductive adhesives comprising at least one metal precursor

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138084A (en) 1966-07-22 1968-12-27 Standard Telephones Cables Ltd Method of vapour depositing a material in the form of a pattern
US4752455A (en) 1986-05-27 1988-06-21 Kms Fusion, Inc. Pulsed laser microfabrication
US6537720B1 (en) 1989-03-30 2003-03-25 Polaroid Graphics Imaging Llc Ablation-transfer imaging/recording
US4987006A (en) 1990-03-26 1991-01-22 Amp Incorporated Laser transfer deposition
ATE203333T1 (de) 1993-08-13 2001-08-15 Pgi Graphics Imaging Llc Ablationsübertragung auf zwischenprodukte
DE4330961C1 (de) 1993-09-09 1994-07-28 Krone Ag Verfahren zur Herstellung von strukturierten Metallisierungen auf Oberflächen
JP2540787B2 (ja) * 1994-07-22 1996-10-09 日本電気株式会社 半導体装置の製造方法
US5685939A (en) * 1995-03-10 1997-11-11 Minnesota Mining And Manufacturing Company Process for making a Z-axis adhesive and establishing electrical interconnection therewith
JPH09129649A (ja) * 1995-11-06 1997-05-16 Matsushita Electric Ind Co Ltd 接合材料供給方法及び実装方法
WO1998005068A1 (en) * 1996-07-26 1998-02-05 Philips Electronics N.V. Method of manufacturing and transferring metallic droplets
JPH1070151A (ja) * 1996-08-26 1998-03-10 Ricoh Co Ltd 導電粒子の配列方法及びその装置
US5873511A (en) 1997-05-08 1999-02-23 Shapiro; Herbert M. Apparatus and method for forming solder bonding pads
US6159832A (en) 1998-03-18 2000-12-12 Mayer; Frederick J. Precision laser metallization
US6060127A (en) 1998-03-31 2000-05-09 Matsushita Electric Industrial Co., Ltd. Mechanically restricted laser deposition
WO2000044822A2 (en) 1999-01-27 2000-08-03 The United States Of America, As Represented By The Secretary Of The Navy Fabrication of conductive/non-conductive nanocomposites by laser evaporation
US6936311B2 (en) 1999-01-27 2005-08-30 The United States Of America As Represented By The Secretary Of The Navy Generation of biomaterial microarrays by laser transfer
US6792326B1 (en) * 1999-05-24 2004-09-14 Potomac Photonics, Inc. Material delivery system for miniature structure fabrication
US7014885B1 (en) 1999-07-19 2006-03-21 The United States Of America As Represented By The Secretary Of The Navy Direct-write laser transfer and processing
DE19946182C2 (de) 1999-09-21 2003-07-03 Forschungsverbund Berlin Ev Verfahren zur Herstellung von Kohlenstoff Nanoröhren
US6649861B2 (en) 2000-05-24 2003-11-18 Potomac Photonics, Inc. Method and apparatus for fabrication of miniature structures
AU2000261986A1 (en) 2000-07-20 2003-12-12 The United States Of America As Represented By The Secretary Of The Navy Direct-write laser transfer and processing
JP2003077940A (ja) 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
AT411755B (de) 2001-12-21 2004-05-25 Baeuerle Dieter Dr Vorrichtung und verfahren zum modifizieren einer werkstück-oberfläche mit hilfe von photonen-strahlung
GR1004059B (el) 2001-12-31 2002-11-15 Ιωαννα Ζεργιωτη Κατασκευη βιοπολυμερικων σχηματων μεσω εναποθεσης με λειζερ.
US6703179B2 (en) 2002-03-13 2004-03-09 Eastman Kodak Company Transfer of organic material from a donor to form a layer in an OLED device
US20040022947A1 (en) 2002-08-01 2004-02-05 Duignan Michael T. Method for creating microstructure patterns by contact transfer technique
US6939660B2 (en) 2002-08-02 2005-09-06 Eastman Kodak Company Laser thermal transfer donor including a separate dopant layer
DE10237732B4 (de) 2002-08-17 2004-08-26 BLZ Bayerisches Laserzentrum Gemeinnützige Forschungsgesellschaft mbH Laserstrahlmarkierungsverfahren sowie Markierungsvorrichtung zur Laserstrahlmarkierung eines Zielsubstrats
US20040250769A1 (en) 2002-10-28 2004-12-16 Finisar Corporation Pulsed laser deposition for mass production
JP2006523154A (ja) 2003-03-13 2006-10-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ マーキング方法およびマーキングされた対象
US7294367B2 (en) 2003-06-06 2007-11-13 The United States Of America As Represented By The Secretary Of The Navy Biological laser printing via indirect photon-biomaterial interactions
US8075958B2 (en) 2003-07-29 2011-12-13 Intelligent Energy, Inc. Methods for providing thin hydrogen separation membranes and associated uses
WO2005024908A2 (en) * 2003-09-05 2005-03-17 Si2 Technologies, Inc. Laser transfer articles and method of making
US6962765B2 (en) 2003-10-20 2005-11-08 Kodak Polychrome Graphics Llc Laser-generated ultraviolet radiation mask
US7485337B2 (en) 2004-05-27 2009-02-03 Eastman Kodak Company Depositing an organic layer for use in OLEDs
US7461938B2 (en) 2004-06-30 2008-12-09 Ophthonix, Inc. Apparatus and method for determining sphere and cylinder components of subjective refraction using objective wavefront measurement
US7332424B2 (en) * 2004-08-16 2008-02-19 International Business Machines Corporation Fluxless solder transfer and reflow process
US7358169B2 (en) 2005-04-13 2008-04-15 Hewlett-Packard Development Company, L.P. Laser-assisted deposition
GB0525847D0 (en) 2005-12-20 2006-02-01 Univ Bristol Parallel Laser Direct Write
TWI431380B (zh) 2006-05-12 2014-03-21 光子動力公司 沉積修復設備及方法
KR101430587B1 (ko) 2006-09-20 2014-08-14 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
US7348270B1 (en) * 2007-01-22 2008-03-25 International Business Machines Corporation Techniques for forming interconnects
KR101563237B1 (ko) 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
WO2008157666A1 (en) 2007-06-19 2008-12-24 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Sub-micron laser direct write
US8728589B2 (en) 2007-09-14 2014-05-20 Photon Dynamics, Inc. Laser decal transfer of electronic materials
US20090130427A1 (en) 2007-10-22 2009-05-21 The Regents Of The University Of California Nanomaterial facilitated laser transfer
KR20090041314A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
TWI375498B (en) 2007-11-21 2012-10-21 Ind Tech Res Inst High perfromance laser-assisted transferring system and transfer component
TW200945339A (en) 2007-12-19 2009-11-01 Koninkl Philips Electronics Nv Optical disk format for direct writing materials on a substrate
KR101689519B1 (ko) 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
DE102008057228A1 (de) 2008-01-17 2009-07-23 Schmid Technology Gmbh Verfahren und Vorrichtung zur Herstellung einer Solarzelle
US8056222B2 (en) 2008-02-20 2011-11-15 The United States Of America, As Represented By The Secretary Of The Navy Laser-based technique for the transfer and embedding of electronic components and devices
JP5238544B2 (ja) 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
DE102008026727B3 (de) 2008-06-04 2009-07-30 Technische Universität Carolo-Wilhelmina Zu Braunschweig Trägersystem für die Lasermikrodissektion und den laserinduzierten Transport von biologischem Material und lebenden Zellen
US7919340B2 (en) 2008-06-04 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
WO2009154156A1 (ja) 2008-06-16 2009-12-23 東レ株式会社 パターニング方法およびこれを用いたデバイスの製造方法ならびにデバイス
EP2294240B1 (en) 2008-06-19 2017-03-08 Utilight Ltd. Light induced patterning
US20100123258A1 (en) * 2008-11-14 2010-05-20 Myung Jin Yim Low Temperature Board Level Assembly Using Anisotropically Conductive Materials
US8663754B2 (en) 2009-03-09 2014-03-04 Imra America, Inc. Pulsed laser micro-deposition pattern formation
US8021919B2 (en) 2009-03-31 2011-09-20 Infineon Technologies Ag Method of manufacturing a semiconductor device
ES2360778B1 (es) 2009-07-22 2012-05-03 Universidad De Barcelona Aparato y método para la impresión directa con l�?ser.
JP5323784B2 (ja) 2009-09-15 2013-10-23 フオン・アルデンネ・アンラーゲンテヒニク・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング 微細構造を製造するための方法及び装置
US9039998B2 (en) 2010-03-04 2015-05-26 Institut National De La Sante Et De La Recherche Medical (Inserm) Bioprinting station, assembly comprising such bioprinting station and bioprinting method
WO2011123285A1 (en) 2010-03-29 2011-10-06 Semprius, Inc. Selective transfer of active components
US20110278566A1 (en) 2010-05-17 2011-11-17 Industry-Academic Cooperation Foundation, Yonsei University Method of patterning thin film solution-deposited
GB201009847D0 (en) 2010-06-11 2010-07-21 Dzp Technologies Ltd Deposition method, apparatus, printed object and uses
DE102010043204A1 (de) 2010-08-10 2012-02-16 Von Ardenne Anlagentechnik Gmbh Verfahren und Verwendung einer Vorrichtung zur Erzeugung einer Schicht eines organischen Materials auf einem Substrat

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237279A (ja) * 2000-02-23 2001-08-31 Hitachi Ltd 半導体装置及びそれを用いた電子装置
WO2012107556A2 (en) * 2011-02-11 2012-08-16 Henkel Ag & Co. Kgaa Electrically conductive adhesives comprising at least one metal precursor

Also Published As

Publication number Publication date
JP6283679B2 (ja) 2018-02-21
KR20150106875A (ko) 2015-09-22
TW201426920A (zh) 2014-07-01
US9859247B2 (en) 2018-01-02
CN104854686B (zh) 2018-11-27
EP2917931B1 (en) 2023-08-02
CN104854686A (zh) 2015-08-19
WO2014073963A1 (en) 2014-05-15
EP2917931A1 (en) 2015-09-16
JP2015534285A (ja) 2015-11-26
US20150294951A1 (en) 2015-10-15
TWI674654B (zh) 2019-10-11
EP2731126A1 (en) 2014-05-14

Similar Documents

Publication Publication Date Title
KR102160321B1 (ko) 베어 칩 다이 본딩 방법
KR102765516B1 (ko) 디스플레이 모듈 및 디스플레이 모듈의 제조 방법
KR20210027848A (ko) 마이크로 엘이디 디스플레이 및 이의 제작 방법
US8012866B2 (en) Method of bonding semiconductor devices utilizing solder balls
US20050110161A1 (en) Method for mounting semiconductor chip and semiconductor chip-mounted board
US8735218B2 (en) Method and apparatus for manufacturing an electronic assembly, electronic assembly manufactured with the method or in the apparatus
KR20210019323A (ko) 마이크로 엘이디 디스플레이 및 이의 제작 방법
WO2014006787A1 (ja) 電子部品実装構造体、icカード、cofパッケージ
KR102403569B1 (ko) 열압착 본더, 열압착 본더 작동 방법, 및 미세 피치의 플립 칩 조립체 상호 접속 방법
Zacharatos et al. Laser-induced forward transfer (LIFT) technique as an alternative for assembly and packaging of electronic components
CN104349602A (zh) 薄膜形成方法及薄膜形成装置
US20240324101A1 (en) Pcb production by laser systems
DE102009020540B4 (de) Verfahren und Vorrichtung zum Herstellen einer elektronischen Baugruppe und mit dem Verfahren oder in der Vorrichtung hergestellte elektronische Baugruppe
JP7411829B2 (ja) 高分解能ソルダリング
JP2014013828A (ja) Icカードの製造システム、および製造方法
JP2010287612A (ja) Acf貼り付け装置及び貼り付け方法、並びにフラットディスプレイ装置
WO2021075051A1 (ja) 部品装着方法、および部品装着装置
JP2013225656A (ja) 半導体回路構造体及びその製造方法
JP7213361B2 (ja) 積層ユニットの接着方法
US10658201B2 (en) Carrier substrate for a semiconductor device and a method for forming a carrier substrate for a semiconductor device
JPH09129649A (ja) 接合材料供給方法及び実装方法
Arutinov et al. Integration with Light
WO2024241533A1 (ja) 電気回路形成方法、および電気回路形成装置
JPH09326466A (ja) 積層半導体装置のはんだ付け方法及びその製造方法並びに積層半導体モジュール

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000