TWI674654B - 用以接合裸晶片晶粒之方法 - Google Patents

用以接合裸晶片晶粒之方法 Download PDF

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Publication number
TWI674654B
TWI674654B TW102140687A TW102140687A TWI674654B TW I674654 B TWI674654 B TW I674654B TW 102140687 A TW102140687 A TW 102140687A TW 102140687 A TW102140687 A TW 102140687A TW I674654 B TWI674654 B TW I674654B
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Taiwan
Prior art keywords
connection pad
substrate
pad structure
bonding
connection
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TW102140687A
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English (en)
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TW201426920A (zh
Inventor
艾德斯格Ｃ Ｐ 史密茲
桑迪普Ｍ 珀英曲瑞
傑若恩 凡德布蘭德
拉節許 曼丹帕朗皮
哈瑪納斯Ｆ Ｍ 西后
Original Assignee
荷蘭商荷蘭Ｔｎｏ自然科學組織公司
校際微電子研究中心
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Publication of TW201426920A publication Critical patent/TW201426920A/zh
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    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
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    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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Abstract

本發明提供一種用於組裝一微電子組件之方法，其包含以下步驟：提供一導電晶粒接合材料，其包含一導電熱固性樹脂材料或以助熔劑為主之焊料及一與該導電熱塑性材料晶粒接合材料層相鄰之動態釋放層；及照射一雷射光束在與該晶粒接合材料層相鄰之該動態釋放層上；因此該動態釋放層被活化以將導電晶粒接合材料物質導向欲處理之墊結構，以便以一轉移之導電晶粒接合材料覆蓋該墊結構之一選擇部份；且其中該雷射光束之時間及能量受限，使得該晶粒接合材料物質保持熱固性。因此，可轉移黏著物質同時防止該黏著劑因在該轉移程序中過度熱暴露而失效。

Description

用以接合裸晶片晶粒之方法 發明領域
本發明係有關於在一基板，特別是在一撓性基板上裸晶粒晶片組件互連及固定方法。
背景
在一基板上互連不同裸晶片組件或微電子組件係需要以足夠精確性準確地沈積材料以便迷你化電氣或其他種類之互連使得當一晶片組件附接在一放置位置時可達成對該基板之所有電氣連接與固定的一程序。通常，藉由透過一等向導電黏著劑或焊料糊接合裸晶粒面向下，即在該晶片或封裝體之底部之該等電極朝向該電路板電極，可實施這程序。一導電黏著劑之例係載有銀粒子之一熱或UV可硬化樹脂。一焊料糊通常包含焊料顆粒及助熔劑。該等焊料糊需要用以移除在該等顆粒上之氧化物層且改善在迴焊時之濕潤性的助熔劑。兩種互連，即導電黏著劑或焊料糊，對於在放置晶片之前應避免之熱衝擊是敏感的。助熔劑係在120與150℃以上之溫度活化且對一導電黏著劑而言一熱衝擊亦將使該黏著劑之黏著性劣化。目前已知多 種用以印刷導電黏著劑及焊料糊以便接合裸矽或LED晶片、插入物或球格柵陣列在撓性基板上之方法。該等習知方法包括網版印刷法及模板印染法。該等目前之技術是有效的；但是，它們仍有某些本質上之限制。
a)網版印刷法及模板印染法係快速技術，但是 它們沒有必須之解析度(大約100μm)。該基板之接觸模式及卷材移動使它容易錯位。由於它是一接觸模式程序，可能對脆弱之基板造成破壞且在放置晶片之前只可沈積單層材料。它無法處理不平坦表面且特別對於以薄片為主之卷對卷程序而言，無法補償卷材變形。此外，製造一網版是昂貴的，沒有非常高之撓性且它們必須在網版印刷10,000至100,000次及模板印染法200,000次後更換。最後，需要定期清潔及維修以得到適當結果。
b)分配法及噴射法係非接觸法且不需要模板或 遮罩。但是它們的解析度限於250μm，且這對大部份之裸晶粒Si及迷你化被動組件是不足的。此外，以通常每秒10點之產率而言，它們是相當慢的程序。
c)銷轉移法係一可能之方法，但是它受限於黏 度範圍及欲轉移之層的厚度並且欲轉移之形狀是不可撓的。
在2010年10月25日，Advanced Materials22卷， 40期，4462至4466頁，Piqué et等人之“藉由銀奈米糊雷射直接寫入三維印刷互連物”中，說明一雷射直接寫入法，其中一以溶劑為基之乾奈米銀糊被轉移至一基板上，以便 為電線接合用於裸晶粒LED之互連物提供另一方法。但是，這方法不是在該晶片上與在該基板上之電氣連接係朝向相同方向的一面向下接合方法且它亦未藉由黏著對該基板提供任何固定。由於它只在將該裸晶粒放在一聚醯亞胺基板上之袋中而沒有結構黏著，故它不是適當的。此外，這方法不適用於例如可熱硬化導電黏著劑之大部份互連材料，因為使用一雷射脈衝將硬化或劣化該黏著劑而使它不適合接合。
發明概要
習知總成無法提供一用以在撓性基板上高解析度地接合細間距裸晶粒，提供足夠可撓性及可靠性之適當方法，因此本發明尋求一解決方法。為達此目的，所提出的是提供一種在一基板上接合具有一或多數電氣連接墊之一微電子，特別是一裸晶粒組件之方法，且該基板在其基板表面上具有配置成用以透過該一或多數連接墊之各個連接墊互連該微電子組件之一連接墊結構，該方法包含以下步驟：-提供一供應膜，該供應膜包含一可硬化導電黏著劑或以助熔劑為主之焊料糊的接合材料及一與該接合材料層相鄰之動態釋放層；-對齊一雷射系統之一雷射光束且引導遠離該基板表面之該供應膜；-照射該雷射光束在該動態釋放層上，使得該動態釋放 層被活化以便以由該接合材料層轉移之接合物質覆蓋該等連接墊或該連接墊結構之一選擇部份；-將該微電子組件及其墊施加在該墊結構上，使得在該等墊及該墊結構之一或兩者上之該接合物質在該墊結構與各個墊之間形成一電氣連接；及-藉由硬化該導電黏著劑或迴焊該接合物質之焊料糊，以大於1Mpa之一剪力強度接合該微電子組件。
因此，提供另一種接合方法，其中該接合物質可以一所欲解析度尺寸轉移，且同時防止該接合物質因在該轉移程序中過度熱暴露而失效。該接合物質可藉由一可熱固性或熱塑性黏著劑或藉由一含有助熔劑之焊料糊形成，其中，在由該晶粒接合材料轉移該含有助熔劑之焊料糊至該基板表面時，該雷射光束之時間及能量受限，使得該助熔劑在該轉移之接合物質內保持原狀。應了解的是當由該接合材料層轉移該接合物質至該等墊或墊結構後該接合材料保持其接合性質時，該接合物質保持原狀，即，該接合物質仍適合藉由該固定步驟，即硬化該熱固性材料或迴焊該焊料糊接合。依此方式提供一種有效之接合方法，其中藉由相對於配置在一撓性基板上之微特徵定位該等微電子組件，可特別地以比習知墊尺寸明顯小之解析度點尺寸接合及電氣互連該微電子組件之墊。
10‧‧‧晶片
15‧‧‧晶粒接合材料；基質
20‧‧‧撓性基板
30‧‧‧晶片墊
40‧‧‧墊結構
50‧‧‧晶片接合材料物質；黏著劑；焊料糊
60‧‧‧導電晶粒接合物質結構黏著劑
70‧‧‧基板；帶；結構化供應膜
75‧‧‧供應進給系統
80‧‧‧墊片
151‧‧‧可硬化導電黏著劑；焊料糊；晶粒接合材料層
152‧‧‧動態釋放層
180、185‧‧‧捲筒
190‧‧‧電動平台
195‧‧‧雷射
210、215‧‧‧引導構件
220‧‧‧平台
240‧‧‧引導滾筒
250‧‧‧轉移段
255‧‧‧拾取及放置單元；定位裝置
260‧‧‧熱暴露步驟；熱硬化單元；接合工具
265‧‧‧第一捲筒
270‧‧‧第二捲筒
280‧‧‧焊料熔化物
285‧‧‧熱固性非導電黏著劑
310‧‧‧電阻、電容或電感
410‧‧‧裸晶粒LED
415‧‧‧接合區域
425‧‧‧陽極凸塊
426‧‧‧陰極凸塊
1511‧‧‧晶粒接合物質
1521‧‧‧氮及其他有機揮發氣體
A,B,C‧‧‧實施例
D‧‧‧點直徑
P‧‧‧運送方向
圖式簡單說明
圖1顯示用於一微電子組件之示意組裝方法。
圖2A與2B顯示用以轉移該黏著劑或焊料物質之一設備的示意實施例。
圖3A與3B顯示用以實施例該接合方法之一以帶為主之進給系統。
圖4顯示用於該晶片總成之一卷對卷進給系統。
圖5顯示用以互連球格柵陣列型結構與一基板之示意實施例。
圖6顯示用以互連一被動組件或裸晶粒在一薄片上之示意實施例。
圖7顯示一結構化供應膜之一例。
詳細說明
在一態樣中，為高速定位用於不同晶片組件之晶粒接合材料在基板上提供一直接寫入方法，且該方法可以一捲筒對捲筒製造方式操作。詳而言之，該方法可供高解析度地沈積高黏度材料使用。利用揭露方法及系統之可獲得解析度，可以小於50微米之轉移之接合物質之一點直徑獲得轉移之晶粒接合材料之一解析度點尺寸。
圖1示意地顯示用以接合一裸晶粒晶片組件(多數晶片)10之分立墊片30在撓性基板20之一墊結構40上之方法的數個實施例(A、B、C)。如以下進一步所示，該方法具有足以修正該撓性基板20之卷材變形之準確性。在這本文中使用之用語“撓性基板”特別表示可彎曲到足以在一捲筒對捲筒程序中使用之一基板。換言之，在這本文中使用 之一撓性基板係具有足以彎曲超過某一曲率，例如一1至100公分之半徑(依該卷之直徑而定)，且該基板實質上未喪失功能性之一基板。晶片接合材料物質50之來源可放在該墊結構40上(圖1A)或在晶片墊30上，如圖1B所示之例子。該等晶片10可接著直接接合在該基板20卷材之一墊結構40上。另外地或替代地，可設置一導電晶粒接合物質與結構黏著劑60之複合圖案。又，或者，該方法可用以互連配置在積層撓性基板上之墊結構。
圖2A與2B顯示用於如申請專利範圍所述之方法的用以轉移晶粒接合物質1511至在一基板20上之一墊結構40(圖2A)或至裸晶粒10之晶片墊30(圖2B)的轉移設備。在一實施例中，提供一種在一基板20上接合具有一或多數電氣連接墊之一微電子，特別是一裸晶粒組件10之方法，且該基板20在其基板表面上具有配置成用以透過該一或多數連接墊之各個連接墊互連該微電子組件之一連接墊結構40，該方法包含以下步驟：-提供一供應膜，該供應膜包含一可硬化導電黏著劑151及一動態釋放層152；-對齊一雷射系統之一雷射光束且引導遠離該基板表面之該供應膜；-照射該雷射光束在該動態釋放層上，使得該動態釋放層被活化以便以由該供應膜轉移之黏著劑50覆蓋該等連接墊或該連接墊結構之一選擇部份；其中該雷射光束之時間及能量受限，使得該轉移之黏著劑仍可硬化； -將該微電子組件10及其墊施加在該墊結構上，使得在該等墊及該墊結構之一或兩者上之該接合物質在該墊結構與各個墊之間形成一電氣連接；及-硬化在該等墊與該墊結構之間之導電黏著劑以便以大於1Mpa之一剪力強度接合該微電子組件。
在一實施例中，提供一種在一基板20上接合具有一或多數電氣連接墊之一微電子組件，特別是一裸晶粒組件10之方法，且該基板20在其基板表面上具有配置成用以透過該一或多數連接墊之各個連接墊互連該微電子組件之一連接墊結構40，該方法包含以下步驟：-提供一供應膜，該供應膜包含一焊料糊151及一動態釋放層152；-對齊一雷射系統之一雷射光束且引導遠離該基板表面之該供應膜；-照射該雷射光束在該動態釋放層上，使得該動態釋放層被活化以便以由該供應膜轉移之焊料糊50覆蓋該等連接墊或該連接墊結構之一選擇部份；其中該雷射光束之時間及能量受限，使得該轉移之焊料糊包括由大於10%體積百分比之助熔劑構成之助熔劑；-將該微電子組件10及其墊施加在該墊結構上，使得在該等墊及該墊結構之一或兩者上之該焊料糊在該墊結構與各個墊之間形成一電氣連接；及迴焊在該等墊與該墊結構之間之焊料糊以便以大於1Mpa之一剪力強度接合該微電子組件。
與習知方法不同，該等實施例具有它們在以它們的墊更換後用以高速高解析度地接合微電子組件與該基板之各個墊結構的共同觀念。由於該轉移之黏著劑或焊料糊在轉移時，即在放置之前分別保持原狀，特別是，可硬化，或可迴焊，所以該等接合性質是最佳的，使得在該組件10放在該墊結構上之後，該接合物質，特別是該黏著劑或焊料糊可分別硬化或迴焊，以提供可具有大於1Mpa之一接合強度之具電氣連接性的強固接合。這是一種可用於大型工業之非常有效且符合經濟效益的方法。
在該設備中，一雷射點形成有一大約20至200微米之點直徑D，特別是，一具有20至300mJ/cm2，更特別是，40至150mJ/cm2之能量密度的Nd：YAG或準分子雷射。
該點係對準一透明運載基板70，在該例中，一用於248nm KrF準分子之石英玻璃及用於一355nm Nd：YAG雷射之PET或鈉鈣玻璃。在該基板70上，具有一導電晶粒附接晶粒接合材料15，其包含一導電熱固性材料或以助熔劑為主之焊料糊的一晶粒接合材料層151及一與該導電熱固性或以助熔劑為主之焊料糊材料晶粒接合材料層151相鄰的動態釋放層152。動態釋放層在所屬技術領域中是習知的且通常包含形成在一層中之一組分，且當被局部照射時，該層突然局部地轉變成氣體物質，因此藉由該氣體物質之推進提供該動態釋放。在該例中，該動態釋放層152係藉由作為一犧牲動態釋放層(DRL)之一大約100nm厚度的三氮烯層形成，且包含一當被光活化時分解成氮及其他 有機揮發氣體1521之聚合物。提供由設置在該動態釋放層152上之物質之一動態釋放，即，由該動態釋放層152至該墊結構40之一選擇部份之一可硬化導電黏著劑或以助熔劑為主之焊料糊之接合物質之動態釋放的效果之亦同樣適用。在290至330nm發現一典型峰吸收且在308至248nm之剝蝕極限值：22至32mJ/cm2係相當低，使得該供應晶粒附接膜層或焊料糊未受到熱負載且在轉移後保持原狀，使得該晶粒接合物質1511仍可熱固。例如，該雷射光束之時間及能量受限，使得藉由該動態釋放層152至該連接墊或連接墊結構40之動態釋放轉移之該晶粒接合材料物質仍可熱固或由大於10%體積百分比之焊料助熔劑構成。因此，可在藉由照射該雷射光束在與該晶粒接合材料層15之導電可硬化材料相鄰之該動態釋放層152上，由該動態釋放層152轉移至該墊結構時保持一所欲材料性質，使得該動態釋放層152被活化以導引該導電晶粒附接晶粒接合物質1511且利用轉移之導電晶粒接合材料覆蓋該基板20之一選擇部份。
以導電晶粒接合材料覆蓋該選擇部份明顯地具有在該墊結構與該導電晶粒之間提供一適當電氣連接之功能。在該例中，如圖2A與2B可見，轉移一可熱固等向導電黏著性材料151，且該可熱固等向導電黏著性材料151在例如塗覆Cu基板或銀線路上具有一通常4至10×10-4Ohm．cm之體積電阻的導電性及一10至3分鐘在120至150℃之通常硬化溫度，可由Henkel購得之CE 3103 WLV，且具有一15至25Pa．s之黏度。為了顯示該方法之一般應用， 轉移由具有一160至180Pa．s之黏度且在150℃大約10分鐘硬化之一高黏度導電黏著劑的來自Henkel之另一實驗。該導電黏著劑151係設置在該動態釋放層152上且設置為20至30微米，特別是25微米厚度之一均勻層。該厚度係控制為大約25μm或50μm，但是理論上可為任何厚度。該供應接合材料係藉由墊片80保持在一遠離該基板大約13至150微米之距離。在一範例中，操作溫度係在一攝氏10度至攝氏180度之範圍內。於一範例中，晶粒接合材料層具有在10至50微米間之範圍內的一厚度。
此外，該導電黏著劑亦可以一以助熔劑為主之Sn96.5Ag3Cu0.5型5焊料糊取代。可達成適當轉移具有該助熔劑之該焊料且可藉由迴焊確認功能。又，可成功地轉移非導電結構黏著劑或壓感黏著劑。該黏著劑可具有一1.2Pa．s之黏度。
在一實施例中，一晶粒接合材料層可為一15至30微米厚之固體熱塑性層，且該固體熱塑性層具有一大約7×10-4Ohm．cm之低電阻及一在175至200℃大約1.5小時之硬化程序。
在圖3A與3B中，顯示用以由在一捲筒185上且繞回一捲筒180之一帶70轉移導電可固化黏著劑或焊料糊之轉移系統。在此所揭露之接合方法適合且可與一對齊偵測系統組合進行準確且適用之修正，使它適合放在通常無法保證卷材完整性之一撓性卷材上。在圖3A中，帶70可由PET卷材構成且通過一供應進給系統75，其中它對齊在一 雷射195之光束下方且轉移至一接受基板20之墊結構40上。該基板可藉由一電動平台190移動，且該電動平台190可依據相對該雷射195對齊該基板20之對齊控制裝置移動。圖3B顯示另一例子，其中一供應膜15係藉由分別具有引導構件210與215之一電動平台220移動，且該等引導構件210與215係用以以一X-Y方式在一基板20上引導該膜。該基板可藉由平台220以一運送方向P移動。該雷射195可機械地或光學地移動，使得接合物質1511之轉移可相對於該基板20對齊。
圖4顯示用於一微電子組件10之示意組裝程序，包括藉由該LIFT法在如在前段所示之轉移段250中轉移晶片接合及互連物質。詳而言之，揭露用於在一撓性基板或薄片20上利用導電晶粒附接物質50及非導電晶粒附接物質60互連及接合一裸晶片組件10的一裸晶片組件互連方法。該方法包括提供具有多數接點40之一撓性基板20及提供欲藉由定位裝置255放在一預定位置之具有多數接點30之裸晶片組件10。該方法包括一熱暴露步驟260，其中該晶片係藉由在該撓性基板，即該薄片捲回該捲筒270上之前，硬化該導電熱固性物或迴焊焊料熔化物280及任選地該熱固性非導電黏著劑285而永久地固定。
在圖4之所揭露之捲筒對捲筒方法中，一基板20或運載卷材係由一第一捲筒265解捲且透過一組引導滾筒240引導至一第二捲筒270而捲起。在該解捲狀態，可實行各種子程序，詳而言之，該等子程序中之一子程序係如在 先前圖1與2中所揭露地接合裸晶片組件。詳而言之，這些子程序可包括：-藉由將導電及非導電晶粒接合物質60引導至受體之LIFT轉移程序來製造互連物(轉移段250)；-藉由一拾取及放置單元255，供給一裸晶片組件10，例如，一以矽為主之裸晶片組件或LED 10，至在該基板20上之一靶區域在該互連材料上且控制壓力；-藉由一熱硬化單元260藉熱固化該導電及非導電黏著劑60及/或迴焊該焊料糊，固定該裸晶片組件10。
該等晶片10可例如藉由如一加熱器之一接合工具260永久地固定在該基板上在該放置位置，且該接合工具活化在該導電晶粒接合供給材料中之熱固性材料，並且該熱固性材料在一硬化溫度區域中以由在260中之該LIFT操作溫度上升之一溫度熱固定，使得該組件藉由該熱硬化，或用以附接晶片至一(撓性)基板之任何其他習知方法固定。
在圖5所示之一例子中，該凸塊陣列係由在一基板20上具有通常在10至500微米之範圍內之直徑的凸塊40構成。該密度是較佳的，因此一足夠數量之凸塊30係在欲放置之一晶片10下方，例如如果該晶片具有一1mm邊緣長度，則一200微米之距離仍是足夠的(在該晶片下方5凸塊×5凸塊)。焊料糊或可熱固黏著劑50凸塊可放在該接合墊上或在該等基板墊上且接著該晶片10之凸塊陣列30可藉由例如一倒裝晶片法放在且接合在該基板上。此外，可轉移結構黏著劑60以便進一步結構接合。
在圖6之例子中，可在一預圖案化薄片20上放置如被動組件之其他微電子組件，例如電阻、電容或電感310或裸晶粒LED 410，其中導電黏著劑或焊料糊50及非導電60係藉由上述技術施加。在此具有該基板薄片20之例中該電阻310或裸晶粒LED 410係可透過導電凸塊而與導電線路40連接。詳而言之，該等電路係有利地施加在欲施加在例如在PEN或PET薄片上之銀或銅線路上的一撓性基板上。一典型晶片高度可例如在0至250微米之間變化。該裸晶粒LED 410具有大約80×80微米或甚至更小至大約50×50微米之一陽極凸塊425及陰極凸塊426，及大約230×190微米之一接合區域415(LED部份)。
雖然本發明已在圖式及前述說明中詳細顯示及說明過了，該顯示及說明應被視為說明性的或示範性的而不是限制性的；本發明不限於所揭露之實施例。詳而言之，除非由上下文可清楚了解，否則在分別說明之各種實施例中討論之各種實施例的態樣被視為可以相關及實體之變化的任何組合揭露且本發明之範圍擴大至該等組合。此外，就該導電或非導電黏著劑而言，該沈積步驟作為在一晶片製造程序中處理用於晶片晶粒之凸塊之一方法的一實施例實施。該方法包含：夾持一晶圓，且該晶圓具有可具有一導電黏著劑之多數標記凸塊；提供遠離該晶圓頂表面之一導電晶粒附接供應膜；相對於在該晶圓上之一標定凸塊，對齊該雷射系統之雷射光束且引導該導電晶粒附接供應膜；及在與面向該晶圓之一側相反之該導電晶 粒附接供應膜上照射一雷射光束；調整該雷射光束之時間、能量及方向以產生朝向一欲處理之凸塊的導電晶粒附接供應膜物質。
另一實施例包括一多次發射程序，其提供相對於該凸塊引導新導電晶粒附接供應膜及照射該雷射光束在該導電晶粒附接供應膜上以導引導電晶粒接合物質之一粒子至該凸塊上的多數重覆步驟。
為了達成以一每秒至少1000至3000凸塊之速度之符合經濟效益互連，一雷射重覆速度最好是至少60至600kHz。就一欲以這些速度更新之導電晶粒附接供應膜而言，具有高更新速度能力之一導電晶粒附接供應膜更新模組是非常有利的，例如，具有相對於該凸塊大於0.1m/s之一導電晶粒附接供應膜更新速度。與一相對高數量之大約60至200凸塊組合之高雷射重覆速度為這晶片接合應用提供與模板印染法及網版印刷法不相上下且遠優於以大約每秒10凸塊噴射印刷之沈積速度的一有效操作範圍。
圖7顯示一結構化供應膜70之一例子。為促進一良好界定之接合物質的形成，該供應膜可以一預機械加工形式設置，例如，包含一犧牲層、設置在該犧牲材料之一基質15中的一預圖案化導電晶粒接合材料層。該均質層之一適當厚度可在50與2000nm之範圍之間，且宜在一50至500nm之範圍內或甚至更佳的是在一50至250nm之範圍內。
或者，用以處理一凸塊之一實施例可藉由分 段，即一非卷對卷程序來實施。例如一快速光束調變器(電磁鏡，多邊鏡，聲光或電光調變器等)提供以一第一方向之該雷射光束之一掃描移動。該調變器可在向前進給程序中控制，其中凸塊之座標係由提供一晶片晶粒之布置資料之一外部來源提供。或者，該調變器可作為一掃描單元使用，且該掃描單元在一預掃描階段測定該等凸塊座標。或者，另一光學回饋系統可提供相對於該凸塊之對齊。又，一主光束分成大約2至20子光束。在該實施例中，各單一凸塊可藉由一多次發射程序處理，其中提供相對於該凸塊引導新導電晶粒附晶粒接合材料及產生一供應物質之多數重覆步驟。
在實施本發明時，由研究圖式、揭露內容及以下申請專利範圍，所屬技術領域中具有通常知識者可了解所揭露之實施例的其他變化例。在申請專利範圍中，該用語“包含”包括其他元件或步驟，且不定冠詞“一”包括多數。一單一單元可實現在申請專利範圍中所述之數種物件之功能。只在互相不同之依附項中述及某些方法的事實不代表這些方法之一組合不能被用來得到好處。在申請專利範圍中之任何參考符號不應被解釋為限制該範圍。優於習知印刷法之所揭露雷射轉移程序的優點係使用範圍：對所欲特徵而言，具有模板印染法(解析度點尺寸通常為75μm)及甚至更多之噴射印刷(通常解析度點尺寸：200μm)通常會失敗的一解析度<50μm。此外，該供應物質可具有一可轉移之大範圍之黏度(由1Pa．s至160Pa．s(非消耗的))。 就模板印染法而言，通常黏度係>50Pa．s且就噴墨印刷而言，通常黏度係<0.1Pa．s。與模板印染法及網版印刷法不同，它是可使用一目視系統快速地修正卷材變形之非接觸直接寫入法。

Claims (14)

  1. 一種在基板上接合具有一或多數電氣連接墊之特別是裸晶粒組件的微電子組件之方法，而該基板在其基板表面上具有一連接墊結構，該連接墊結構係配置成透過該一或多數連接墊之個別連接墊與該微電子組件互連，該方法包含以下步驟：提供一供應膜，該供應膜包含一可硬化導電黏著劑或以助熔劑為主之焊料糊的接合材料及一與該接合材料層相鄰之動態釋放層；對齊一雷射系統之一雷射光束且引導該供應膜遠離該基板表面；照射該雷射光束在該動態釋放層上，使得該動態釋放層被活化以便以由該接合材料層轉移之接合物質覆蓋該等連接墊或該連接墊結構之一選擇部份；將該微電子組件及其連接墊施加在該連接墊結構上，使得在該等連接墊及該連接墊結構之一或兩者上之該接合物質在該連接墊結構與各個連接墊之間形成一電氣連接；及藉由使該導電黏著劑硬化或迴焊該接合物質之焊料糊，以大於1Mpa之一剪力強度接合該微電子組件。
  2. 如請求項1之方法，其中該接合材料在一操作溫度區域中係具有熱塑性，且在一具有由該操作溫度上升之一溫度之一硬化溫度中係具有熱固性。
  3. 如請求項2之方法，其中該操作溫度係在一攝氏10度至攝氏180度之範圍內。
  4. 如請求項1之方法，其中該基板係一撓性基板，且該撓性基板具有一至少1公分之曲率半徑。
  5. 如請求項1之方法，其中該供應膜至該基板表面之距離係保持在13至150微米之範圍內。
  6. 如請求項1之方法，其中該晶粒接合材料層具有在10至50微米間之範圍內的一厚度。
  7. 如請求項1之方法，其中該供應膜具有一預機械加工之圖案。
  8. 如請求項7之方法，其中該預機械加工之圖案形成一格柵圖案，且該格柵圖案具有等於或小於一雷射點尺寸之一格柵尺寸。
  9. 如請求項8之方法，其中該圖案具有一40至80微米之格柵間距範圍。
  10. 如請求項1之方法，其中該等連接墊具有在10至500微米範圍的尺寸。
  11. 如請求項1之方法，其中該接合材料在一操作溫度區域中係一黏性熱固性樹脂，其中該黏性係在1與160Pa．s間的範圍內。
  12. 如請求項1之方法，其中該雷射光束之時間及能量受限，使得該轉移的接合物質仍可硬化或由大於10%體積百分比之焊料助熔劑構成。
  13. 一種在基板上接合具有一或多數電氣連接墊之特別是 裸晶粒組件的微電子組件之方法，而該基板在其基板表面上具有一連接墊結構，該連接墊結構係配置成透過該一或多數連接墊之個別連接墊與該微電子組件互連，該方法包含以下步驟：提供一供應膜，該供應膜包含一可硬化導電黏著劑及一動態釋放層；對齊一雷射系統之一雷射光束且引導該供應膜遠離該基板表面；照射該雷射光束在該動態釋放層上，使得該動態釋放層被活化以便以由該供應膜轉移之黏著劑覆蓋該等連接墊或該連接墊結構之一選擇部份；其中該雷射光束之時間及能量受限，使得該轉移之黏著劑仍可硬化；將該微電子組件及其墊施加在該連接墊結構上，使得在該等連接墊及該連接墊結構之一或兩者上之該接合物質在該連接墊結構與各個連接墊之間形成一電氣連接；及使在該等連接墊與該連接墊結構間之導電黏著劑硬化以便以大於1Mpa之一剪力強度接合該微電子組件。
  14. 一種在基板上接合具有一或多數電氣連接墊之特別是裸晶粒組件的微電子組件之方法，而該基板在其基板表面上具有一連接墊結構，該連接墊結構係配置成透過該一或多數連接墊之個別連接墊與該微電子組件互連，該 方法包含以下步驟：提供一供應膜，該供應膜包含一焊料糊及一動態釋放層；對齊一雷射系統之一雷射光束且引導該供應膜遠離該基板表面；照射該雷射光束在該動態釋放層上，使得該動態釋放層被活化以便以由該供應膜轉移之焊料糊覆蓋該等連接墊或該連接墊結構之一選擇部份；其中該雷射光束之時間及能量受限，使得該轉移之焊料糊包括由大於10%體積百分比之助熔劑構成之助熔劑；將該微電子組件及其連接墊施加在該連接墊結構上，使得在該等連接墊及該連接墊結構之一或兩者上之該焊料糊在該墊結構與各個連接墊之間形成一電氣連接；及迴焊在該等連接墊與該連接墊結構間之該焊料糊以便以大於1Mpa之一剪力強度接合該微電子組件。
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