KR102137986B1 - 계측 장치, 노광 장치 및 물품의 제조 방법 - Google Patents

계측 장치, 노광 장치 및 물품의 제조 방법 Download PDF

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KR102137986B1
KR102137986B1 KR1020197005133A KR20197005133A KR102137986B1 KR 102137986 B1 KR102137986 B1 KR 102137986B1 KR 1020197005133 A KR1020197005133 A KR 1020197005133A KR 20197005133 A KR20197005133 A KR 20197005133A KR 102137986 B1 KR102137986 B1 KR 102137986B1
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KR20190032486A (ko
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고헤이 마에다
아키히로 다카하시
마나토 후루사와
히데아키 홈마
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020197005133A 2016-08-05 2017-06-15 계측 장치, 노광 장치 및 물품의 제조 방법 Active KR102137986B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016154946A JP6704813B2 (ja) 2016-08-05 2016-08-05 計測装置、露光装置、および物品の製造方法
JPJP-P-2016-154946 2016-08-05
PCT/JP2017/022039 WO2018025515A1 (ja) 2016-08-05 2017-06-15 計測装置、露光装置、および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20190032486A KR20190032486A (ko) 2019-03-27
KR102137986B1 true KR102137986B1 (ko) 2020-07-27

Family

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KR1020197005133A Active KR102137986B1 (ko) 2016-08-05 2017-06-15 계측 장치, 노광 장치 및 물품의 제조 방법

Country Status (4)

Country Link
JP (1) JP6704813B2 (enrdf_load_stackoverflow)
KR (1) KR102137986B1 (enrdf_load_stackoverflow)
CN (1) CN109564397B (enrdf_load_stackoverflow)
WO (1) WO2018025515A1 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7299406B2 (ja) * 2019-07-04 2023-06-27 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジにおける補正不能誤差
US11610296B2 (en) * 2020-01-09 2023-03-21 Kla Corporation Projection and distance segmentation algorithm for wafer defect detection
JP7475185B2 (ja) 2020-04-10 2024-04-26 キヤノン株式会社 計測方法、インプリント装置及び物品の製造方法
JP7489829B2 (ja) * 2020-05-21 2024-05-24 キヤノン株式会社 処理装置、計測方法および物品製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011040548A (ja) 2009-08-10 2011-02-24 Canon Inc 計測装置、露光装置及びデバイスの製造方法
JP2012132754A (ja) 2010-12-21 2012-07-12 Panasonic Corp テクスチャ評価装置、テクスチャ評価方法
JP2015090315A (ja) 2013-11-06 2015-05-11 Ｊｆｅスチール株式会社 厚み測定装置、厚み測定方法及び腐食深さ測定方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06249621A (ja) * 1993-02-24 1994-09-09 Sumitomo Heavy Ind Ltd 膜厚分布計測装置
JP4405241B2 (ja) * 2002-11-19 2010-01-27 株式会社 液晶先端技術開発センター 液晶ディスプレイ用ガラス基板の露光方法および露光装置ならびに処理装置
US20050134816A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, method of exposing a substrate, method of measurement, device manufacturing method, and device manufactured thereby
JP2006156508A (ja) 2004-11-26 2006-06-15 Nikon Corp 目標値決定方法、移動方法及び露光方法、露光装置及びリソグラフィシステム
JP2006349351A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd ３次元微細形状測定方法
SG182983A1 (en) * 2006-08-31 2012-08-30 Nikon Corp Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
WO2013061976A1 (ja) * 2011-10-24 2013-05-02 株式会社日立製作所 形状検査方法およびその装置
JP6491833B2 (ja) * 2014-07-31 2019-03-27 株式会社日立ハイテクノロジーズ 高さ測定装置
KR102519334B1 (ko) * 2014-12-19 2023-04-07 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크 및 이들의 제조 방법, 전사용 마스크의 제조 방법 그리고 반도체 디바이스의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011040548A (ja) 2009-08-10 2011-02-24 Canon Inc 計測装置、露光装置及びデバイスの製造方法
JP2012132754A (ja) 2010-12-21 2012-07-12 Panasonic Corp テクスチャ評価装置、テクスチャ評価方法
JP2015090315A (ja) 2013-11-06 2015-05-11 Ｊｆｅスチール株式会社 厚み測定装置、厚み測定方法及び腐食深さ測定方法

Also Published As

Publication number Publication date
JP2018022114A (ja) 2018-02-08
CN109564397A (zh) 2019-04-02
KR20190032486A (ko) 2019-03-27
JP6704813B2 (ja) 2020-06-03
CN109564397B (zh) 2021-01-29
WO2018025515A1 (ja) 2018-02-08

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