WO2018025515A1 - 計測装置、露光装置、および物品の製造方法 - Google Patents

計測装置、露光装置、および物品の製造方法 Download PDF

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Publication number
WO2018025515A1
WO2018025515A1 PCT/JP2017/022039 JP2017022039W WO2018025515A1 WO 2018025515 A1 WO2018025515 A1 WO 2018025515A1 JP 2017022039 W JP2017022039 W JP 2017022039W WO 2018025515 A1 WO2018025515 A1 WO 2018025515A1
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WIPO (PCT)
Prior art keywords
substrate
distribution
height
processing unit
detection
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PCT/JP2017/022039
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English (en)
French (fr)
Japanese (ja)
Inventor
浩平 前田
高橋　彰宏
磨奈人 古澤
英晃 本間
Original Assignee
キヤノン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by キヤノン株式会社 filed Critical キヤノン株式会社
Priority to CN201780048850.0A priority Critical patent/CN109564397B/zh
Priority to KR1020197005133A priority patent/KR102137986B1/ko
Publication of WO2018025515A1 publication Critical patent/WO2018025515A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Definitions

  • the present invention relates to a measuring apparatus, an exposure apparatus, and an article manufacturing method for measuring the height distribution of the surface of a substrate.
  • an exposure apparatus that transfers a mask pattern to a substrate such as a glass plate or wafer coated with a resist via a projection optical system is used. .
  • the surface of the substrate is arranged on the imaging plane (focus plane) of the projection optical system in accordance with the position on the substrate to be exposed. It is preferable to obtain in advance.
  • Patent Document 1 the thickness distribution of a substrate and the height distribution of a holding surface on which the substrate is held are measured in advance, and based on the measurement result, the substrate held on the holding surface is measured. A method for obtaining the height distribution of a surface has been proposed.
  • Some measuring devices that measure the height distribution of the surface of a substrate detect the height of a detection target location in a detection region.
  • the height distribution of the substrate surface can be measured by detecting the height of the substrate surface in the detection region while relatively scanning the substrate and the detection region.
  • the detection area is scanned over the entire surface of the substrate to detect the height of the surface, the detection takes a considerable amount of time, which may be disadvantageous in terms of throughput.
  • an object of the present invention is to provide an advantageous technique for shortening the time for measuring the height distribution of the surface of the substrate.
  • a measuring apparatus has a substrate having a surface in which the height variation in one of the first direction and the second direction different from each other is greater than the height variation in the other.
  • it is a measuring device that measures the height distribution of the surface, by detecting the height of the detection target location in the detection region, and relatively scanning the substrate and the detection region.
  • a processing unit that obtains a height distribution of the surface of the substrate in the scanning direction, and the processing unit scans the substrate and the detection area relatively in the first direction, thereby moving the substrate in the first direction.
  • the height distribution of the surface of the substrate is obtained as a first distribution, it is determined whether or not the height variation in the first distribution is greater than or equal to a reference value, and the height variation in the first distribution is determined to be smaller than a reference value. Case, determine the height distribution of the surface of the substrate in the second direction by relatively scanning the substrate and the detection area in the second direction, it is characterized.
  • FIG. 1 is a schematic diagram showing the configuration of the exposure apparatus 100.
  • the exposure apparatus 100 includes, for example, an illumination optical system 1, a mask stage 3 that holds a mask 2, a projection optical system 4, a substrate stage 6 that holds a substrate 5, a position measurement unit 7, and a focus detection unit 8.
  • the processing unit 9 and the control unit 10 can be included.
  • the control unit 10 is configured by, for example, a computer having a CPU, a memory, and the like, and controls processing for transferring the pattern of the mask 2 to the substrate 5 (processing for exposing the substrate 5).
  • the illumination optical system 1 uniformly illuminates the mask 2 held by the mask stage 3 using light emitted from a light source (not shown).
  • the projection optical system 4 has a predetermined projection magnification and projects the pattern of the mask 2 onto the substrate 5.
  • the substrate stage 6 includes, for example, a substrate chuck 6 a that holds the substrate 5 and a substrate driving unit 6 b that drives the substrate chuck 6 a (substrate 5), and a direction (XY direction) orthogonal to the optical axis of the projection optical system 4. It is configured to be movable.
  • the position measurement unit 7 includes a laser interferometer, for example, and measures the position of the substrate stage 6.
  • the laser interferometer irradiates the reflecting plate 11 provided on the substrate stage 6 with laser light, and detects the displacement of the substrate stage 6 using the laser light reflected by the reflecting plate 11. Thereby, the position measurement unit 7 can obtain the current position of the substrate stage 6 based on the displacement detected by the laser interferometer.
  • the focus detection unit 8 detects the height of the detection target location in the detection area.
  • the focus detection unit 8 may include a light source that obliquely makes light incident on the surface of the substrate 5 and an image sensor having a plurality of pixels that are two-dimensionally arranged. Then, the focus detection unit 8 is a detection target in the area where the light is obliquely incident (in the detection area) on the surface of the substrate 5 based on the position on the image sensor where the light reflected by the surface of the substrate is incident. Detect the height of the location.
  • the processing unit 9 is configured by a computer including a CPU and a memory, for example, and obtains the height distribution of the surface of the substrate 5 based on the detection result of the focus detection unit 8. For example, the processing unit 9 causes the focus detection unit to scan the substrate 5 and the detection area of the focus detection unit 8 relatively in one of the in-plane directions (XY directions) of the substrate 5 with the substrate stage 6. 8 is caused to detect the height of the surface of the substrate 5 in the detection region. Accordingly, the processing unit 9 can obtain the height distribution of the surface of the substrate 5 in the one direction (scanning direction).
  • the processing unit 9 of the present embodiment is configured separately from the control unit 10, but may be configured integrally with the control unit 10.
  • the focus detection unit 8 and the processing unit 9 constitute a measurement device that measures the height distribution of the surface of the substrate 5.
  • the measurement apparatus is provided inside the exposure apparatus 100, but may be provided outside the exposure apparatus 100.
  • the surface of the substrate 5 is an image plane (focus plane) of the projection optical system 4 according to the position on the substrate to be exposed (position of the shot area).
  • the projection image of the projection optical system 4 can be controlled by the control unit 10 so as to be disposed at the position.
  • the projection image is controlled by driving an optical element (lens) provided in the projection optical system 4 or driving the substrate 5 by the substrate stage 6 in a direction parallel to the optical axis of the projection optical system 4. Can be done. Therefore, in the exposure apparatus 100, it is preferable to obtain distribution information indicating the height distribution in the plane of the substrate 5 (the entire surface of the substrate 5) in advance.
  • the detection area is scanned over the entire surface of the substrate and the height of the surface is detected by the focus detection unit 8, the detection requires a corresponding time, which is disadvantageous in terms of throughput. Can be.
  • the measurement apparatus uses the tendency (feature) of the height distribution in the plane of the substrate 5 caused by the manufacturing method of the substrate 5 to make the substrate 5 and the detection region relative to each other.
  • the focus detection unit 8 detects the height of the surface of the substrate 5. That is, in the measurement apparatus of the first embodiment, distribution information is generated without detecting the height of the surface of the substrate 5 by the focus detection unit 8 over the entire surface of the substrate 5. Thereby, the time for measuring the height distribution of the surface of the substrate 5 can be greatly shortened.
  • generation method of distribution information are demonstrated.
  • the tendency of the height distribution of the surface of the substrate 5 resulting from the manufacturing method of the substrate 5 will be described.
  • the glass substrate is manufactured (made by a plate) by stretching in one direction using a float method, a fusion method, or the like.
  • the thickness can be made substantially uniform in the stretching direction, but in the direction orthogonal to the stretching direction (hereinafter referred to as the orthogonal direction) Variations in thickness can occur due to typical temperature fluctuations and temperature fluctuations.
  • the variation in thickness in the stretching direction of the glass substrate is 1 While the thickness is 0.4 ⁇ m, the thickness variation in the orthogonal direction is 12 ⁇ m. That is, the thickness variation in the orthogonal direction is about one digit larger than the thickness variation in the stretching direction. This indicates that the thickness distribution in the orthogonal direction (that is, the surface height distribution in the orthogonal direction) has the same tendency for each of a plurality of positions in the stretching direction.
  • the height distribution of the surface of the substrate 5 in the orthogonal direction can be measured, the height of the entire surface of the substrate 5 is interpolated (estimated) from the measurement result, and the height distribution of the entire surface of the substrate 5 is calculated. Can be requested.
  • the height variation in the other can be larger than the height variation in one of the first and second directions different from each other.
  • the first direction and the second direction may be directions parallel to two sides orthogonal to each other among the sides of the surface of the glass substrate (substrate 5).
  • the processing unit 9 obtains the height distribution of the surface of the substrate 5 in the first direction as the first distribution by relatively scanning the substrate 5 and the detection area of the focus detection unit 8 in the first direction. At this time, if the height variation in the first distribution is greater than or equal to the reference value, the first direction corresponds to the orthogonal direction where the height variation is large. On the other hand, when the height variation in the first distribution is smaller than the reference value, the second direction corresponds to the orthogonal direction. In this case, the processing unit 9 obtains the height distribution of the surface of the substrate 5 in the second direction by relatively scanning the substrate 5 and the detection area of the focus detection unit 8 in the second direction.
  • the reference value is set to a value between the thickness variation that can occur in the stretching direction of the substrate 5 (glass substrate) and the thickness variation that can occur in the orthogonal direction.
  • the “height (of the surface of the substrate)” in the present embodiment may include the concept of “thickness (of the substrate)”. That is, the “height distribution (of the substrate surface)” may include the concept of “thickness distribution (of the substrate)”.
  • FIG. 3 is a flowchart illustrating a method for generating distribution information
  • FIG. 4 is a diagram illustrating a state in which the height of the surface of the substrate 5 is detected by the focus detection unit 8. Further, each step of the flowchart shown in FIG. 3 can be performed by the processing unit 9.
  • the processing unit 9 causes the focus detection unit 8 to scan the substrate 5 and the detection area of the focus detection unit 8 relatively in the first direction (for example, the X direction) as indicated by an arrow 20a in FIG. Processing for detecting the height of the surface of the substrate 5 (detection processing in the first direction) is performed.
  • the detection process in the first direction may be performed a plurality of times, but is preferably performed only once from the viewpoint of throughput. Thereby, the processing unit 9 can obtain the height distribution of the surface of the substrate 5 in the first direction.
  • the height distribution of the surface of the substrate 5 in the first direction performed in step S11 is referred to as a “first distribution”.
  • the detection process in the first direction in S11 can be performed at an arbitrary position (coordinates) in the second direction.
  • the processing unit 9 determines whether or not the height variation in the first distribution is greater than or equal to a reference value.
  • a reference value such as a standard deviation in the first distribution can be used. May be used. If the height variation in the first distribution is greater than or equal to the reference value, it is determined (specified) that the first direction corresponds to an orthogonal direction in which the height variation of the surface of the substrate 5 is relatively large, and the process proceeds to S13. move on. In this case, the processing unit 9 generates distribution information from the first distribution without relatively scanning the substrate 5 and the detection area of the focus detection unit 8 in the second direction.
  • the processing unit 9 also generates distribution information by estimating that the height distribution of the surface of the substrate 5 in the direction parallel to the first direction is the first distribution for each of the plurality of positions in the second direction. To do. For example, the processing unit 9 distributes by applying the first distribution as it is as the height distribution of the surface of the substrate 5 in each of a plurality of directions parallel to the first direction and passing through a plurality of positions in the second direction. Generate information. As described above, since the variation in the thickness of the substrate 5 is very small in the extending direction of the substrate 5, it can be assumed that the variation in the thickness does not occur. Therefore, the processing unit 9 can reduce an error with respect to the actual height distribution of the surface of the substrate 5 even if the distribution information is generated using only the first distribution as described above.
  • the processing unit 9 causes the focus detection unit 8 to scan the substrate 5 and the detection area of the focus detection unit 8 relatively in the second direction (for example, the Y direction) as indicated by an arrow 20b in FIG. Processing for detecting the height of the surface of the substrate 5 (detection processing in the second direction) is performed.
  • the detection process in the second direction may be performed a plurality of times, but is preferably performed only once from the viewpoint of throughput. Accordingly, the processing unit 9 can obtain a height distribution in the second direction on the substrate 5.
  • the height distribution in the second direction obtained in step S14 is hereinafter referred to as “second distribution”.
  • the detection process in the second direction in S14 can be performed at an arbitrary position (coordinates) in the first direction.
  • a plurality of pattern areas 5a shots areas in which a base pattern (device pattern) has already been formed are arranged on the target substrate 5 on which the surface height is detected by the measuring device. There may be.
  • the height detection by the focus detection unit 8 is preferably performed in a gap region 5b (scribe region) provided between the plurality of pattern regions 5a.
  • the processing unit 9 defines the substrate 5 and the detection region so that the focus detection unit 8 detects the height in the gap region 5b based on the layout information indicating the layout (arrangement) of the plurality of pattern regions 5a. It is preferable to scan relatively.
  • the layout information may be acquired, for example, by actually measuring the positions of the plurality of pattern areas 5a, or may be design information on the positions of the plurality of pattern areas 5a.
  • the processing unit 9 determines the height of the undetected portion of the surface of the substrate 5 that has not been detected by the focus detection unit 8 based on the first distribution acquired in S11 and the second distribution acquired in S14. Distribution information is generated by interpolation (estimation). The interpolation of the height of the undetected portion is a result of correcting the first distribution with the height at the predetermined position in the second distribution as a height distribution in a direction passing through the predetermined position in the second direction and parallel to the first direction. This can be done by applying
  • the processing unit 9 obtains the first distribution by performing the detection process in the first direction at the position Y1 in the second direction, and in the process of S14, the second distribution is performed at the position X1 in the first direction. It is assumed that the second distribution is acquired by performing the direction detection process. In this case, the processing unit 9 uses the height at the position Y1 and the height at the position Yi obtained from the second distribution as the height distribution in the direction parallel to the first direction and passing through the position Yi in the second direction. The result (distribution) obtained by correcting the first distribution with the difference is applied.
  • the processing unit 9 generates distribution information by interpolating the height of the undetected portion by applying the result of correcting the first distribution in the same manner for each of the plurality of positions in the second direction.
  • the distribution information is generated using both the first distribution and the second distribution, but the present invention is not limited to this, and the distribution information may be generated using only the second distribution.
  • the measurement device when the height variation in the first distribution obtained by the detection process in the first direction is greater than or equal to the reference value, the measurement device according to the first embodiment generates distribution information based on the first distribution. Generate.
  • the second distribution is obtained by performing detection processing in the second direction, and distribution information is generated based on the first distribution and the second distribution.
  • the measurement apparatus may perform only the process of obtaining the first distribution or the first distribution and the second distribution, and the process of generating the distribution information may be performed by the control unit 10 of the exposure apparatus 100, an external computer, or the like.
  • the processing unit 9 acquires distribution information generated by the control unit 10 of the exposure apparatus 100, an external computer, or the like.
  • FIG. 6 is a flowchart illustrating a distribution information generation method according to the second embodiment. Each step of the flowchart shown in FIG. 6 can be performed by the processing unit 9.
  • the processing unit 9 performs detection processing in the first direction.
  • the detection process in the first direction may be performed a plurality of times, but is preferably performed only once from the viewpoint of throughput. Thereby, the processing unit 9 can obtain the height distribution of the surface of the substrate 5 in the first direction.
  • the height distribution of the surface of the substrate 5 in the first direction obtained in the step S21 is hereinafter referred to as “first distribution”.
  • the detection process in the first direction can be performed at an arbitrary position (coordinates) in the second direction.
  • the processing unit 9 performs detection processing in the second direction.
  • the detection process in the second direction may be performed a plurality of times, but is preferably performed only once from the viewpoint of throughput. Thereby, the processing unit 9 can obtain the height distribution of the surface of the substrate 5 in the second direction.
  • the height distribution of the surface of the substrate 5 in the second direction obtained in the step S22 is hereinafter referred to as “second distribution”.
  • the detection process in the second direction can be performed at an arbitrary position (coordinates) in the first direction.
  • the processing unit 9 In S23, the processing unit 9 generates distribution information by interpolating (estimating) the height of the undetected portion based on the first distribution acquired in S21 and the second distribution acquired in S22. Since the process of S23 is the same as the process of S15 in the flowchart of FIG. 3, a description thereof is omitted here. By generating the distribution information in this way, the time required for measuring the height distribution of the surface of the substrate 5 can be greatly shortened, which can be advantageous in terms of throughput.
  • the processing unit 9 causes the focus detection unit 8 to detect the height of the holding surface of the substrate stage 6 (substrate chuck 6a) in advance, and acquires information indicating the height distribution of the holding surface. Then, the processing unit 9 obtains information indicating the thickness distribution of the substrate 5 based on the result of the focus detection unit 8 detecting the thickness of the substrate 5 according to the flowchart shown in FIG. 3 or FIG.
  • the processing unit 9 performs the in-plane height of the substrate 5 held by the substrate stage 6 based on the information indicating the height distribution of the holding surface of the substrate stage 6 and the information indicating the thickness distribution of the substrate 5.
  • Information indicating the distribution can be obtained.
  • the focus detection unit 8 includes, for example, a light source 8a that emits light having a wavelength of about 500 to 1200 nm and an image sensor 8b that is configured by a CCD, a CMOS, or the like, and the light emitted from the light source 8a is emitted from the substrate 5 (for example, The glass substrate) may be configured to be obliquely incident.
  • the light emitted from the light source 8a (position A) and obliquely incident on the position B on the surface of the substrate 5 is divided into light reflected by the surface of the substrate 5 and light traveling inside the substrate.
  • the light reflected by the surface of the substrate 5 enters the position E on the image sensor.
  • the light traveling inside the substrate 5 is reflected at the position C on the back surface of the substrate 5, passes through the position D on the surface of the substrate 5, and enters the position F on the image sensor. Since the difference between the position E and the position F on the image sensor corresponds to the thickness t of the substrate 5, the focus detection unit 8 can obtain the thickness t of the substrate 5 based on the difference.
  • the method for manufacturing an article in the embodiment of the present invention is suitable for manufacturing an article such as an electronic device such as a semiconductor device or an element having a fine structure.
  • a latent image pattern is formed on the photosensitive agent applied to the substrate using the above-described exposure apparatus (a step of exposing the substrate), and the latent image pattern is formed in this step.
  • the manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like).
  • the method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.
  • the present invention supplies a program that realizes one or more functions of the above-described embodiments to a system or apparatus via a network or a storage medium, and one or more processors in a computer of the system or apparatus read and execute the program This process can be realized. It can also be realized by a circuit (for example, ASIC) that realizes one or more functions.
  • a circuit for example, ASIC

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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PCT/JP2017/022039 2016-08-05 2017-06-15 計測装置、露光装置、および物品の製造方法 WO2018025515A1 (ja)

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CN201780048850.0A CN109564397B (zh) 2016-08-05 2017-06-15 测量装置、曝光装置以及物品的制造方法
KR1020197005133A KR102137986B1 (ko) 2016-08-05 2017-06-15 계측 장치, 노광 장치 및 물품의 제조 방법

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JP2016-154946 2016-08-05

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US11610296B2 (en) * 2020-01-09 2023-03-21 Kla Corporation Projection and distance segmentation algorithm for wafer defect detection
JP7475185B2 (ja) 2020-04-10 2024-04-26 キヤノン株式会社 計測方法、インプリント装置及び物品の製造方法
JP7489829B2 (ja) * 2020-05-21 2024-05-24 キヤノン株式会社 処理装置、計測方法および物品製造方法

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