KR102121097B1 - 반도체 기판 및 반도체 소자 - Google Patents

반도체 기판 및 반도체 소자 Download PDF

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KR102121097B1
KR102121097B1 KR1020167028953A KR20167028953A KR102121097B1 KR 102121097 B1 KR102121097 B1 KR 102121097B1 KR 1020167028953 A KR1020167028953 A KR 1020167028953A KR 20167028953 A KR20167028953 A KR 20167028953A KR 102121097 B1 KR102121097 B1 KR 102121097B1
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KR20160141756A (ko
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겐 사또
히로시 시까우찌
히로까즈 고또
마사루 시노미야
가즈노리 하기모또
게이따로 쯔찌야
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산켄덴키 가부시키가이샤
신에쯔 한도타이 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H01L29/7786—
    • H01L21/02378—
    • H01L21/0242—
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
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    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

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  • Junction Field-Effect Transistors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020167028953A 2014-04-18 2015-03-12 반도체 기판 및 반도체 소자 Active KR102121097B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014086397A JP6249868B2 (ja) 2014-04-18 2014-04-18 半導体基板及び半導体素子
JPJP-P-2014-086397 2014-04-18
PCT/JP2015/001371 WO2015159481A1 (ja) 2014-04-18 2015-03-12 半導体基板及び半導体素子

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KR102121097B1 true KR102121097B1 (ko) 2020-06-09

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US (1) US9876101B2 (https=)
JP (1) JP6249868B2 (https=)
KR (1) KR102121097B1 (https=)
CN (1) CN106233440B (https=)
TW (1) TWI596765B (https=)
WO (1) WO2015159481A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6654957B2 (ja) * 2015-04-23 2020-02-26 ローム株式会社 窒化物半導体デバイス
CN107546260A (zh) * 2016-06-29 2018-01-05 江西省昌大光电科技有限公司 一种半绝缘GaN薄膜及其制备方法
JP6759886B2 (ja) * 2016-09-06 2020-09-23 富士通株式会社 半導体結晶基板、半導体装置、半導体結晶基板の製造方法及び半導体装置の製造方法
JP6615075B2 (ja) * 2016-09-15 2019-12-04 サンケン電気株式会社 半導体デバイス用基板、半導体デバイス、及び、半導体デバイス用基板の製造方法
EP3486939B1 (en) 2017-11-20 2020-04-01 IMEC vzw Method for forming a semiconductor structure for a gallium nitride channel device
CN113424326B (zh) * 2019-02-01 2024-06-14 苏州晶湛半导体有限公司 一种半导体结构及其制备方法
JP7393138B2 (ja) * 2019-06-24 2023-12-06 住友化学株式会社 Ｉｉｉ族窒化物積層体
JP7269190B2 (ja) * 2020-02-27 2023-05-08 株式会社東芝 窒化物結晶、光学装置、半導体装置、窒化物結晶の製造方法
CN111952365A (zh) * 2020-08-14 2020-11-17 中国科学院半导体研究所 碳掺杂调控的GaN基HEMT外延结构及其制作方法
WO2022068256A1 (zh) * 2020-09-30 2022-04-07 苏州能讯高能半导体有限公司 半导体器件的外延结构及其制备方法
JP7388422B2 (ja) * 2021-12-23 2023-11-29 信越半導体株式会社 窒化物半導体基板の製造方法
JPWO2023127520A1 (https=) * 2021-12-27 2023-07-06
WO2023176744A1 (ja) * 2022-03-14 2023-09-21 三菱ケミカル株式会社 ＧａＮエピタキシャル基板
CN119384879A (zh) * 2022-06-28 2025-01-28 三菱电机株式会社 半导体装置
KR102773898B1 (ko) * 2023-08-16 2025-02-27 웨이브로드 주식회사 반도체 소자 성장용 복합기판 및 그 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205146A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011082494A (ja) * 2009-09-14 2011-04-21 Covalent Materials Corp 化合物半導体基板

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4589043B2 (ja) 2004-07-14 2010-12-01 株式会社日立国際電気 データ伝送装置
JP4653671B2 (ja) * 2005-03-14 2011-03-16 株式会社東芝 発光装置
JP4792814B2 (ja) * 2005-05-26 2011-10-12 住友電気工業株式会社 高電子移動度トランジスタ、電界効果トランジスタ、エピタキシャル基板、エピタキシャル基板を作製する方法およびｉｉｉ族窒化物系トランジスタを作製する方法
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
JP5064824B2 (ja) 2006-02-20 2012-10-31 古河電気工業株式会社 半導体素子
JP4234180B2 (ja) * 2007-07-02 2009-03-04 三菱電機株式会社 窒化物系半導体積層構造の製造方法および半導体光素子の製造方法
JP4462330B2 (ja) * 2007-11-02 2010-05-12 住友電気工業株式会社 Ｉｉｉ族窒化物電子デバイス
JP2010123725A (ja) 2008-11-19 2010-06-03 Sanken Electric Co Ltd 化合物半導体基板及び該化合物半導体基板を用いた半導体装置
JP5696392B2 (ja) 2010-07-29 2015-04-08 住友電気工業株式会社 半導体装置
JP6024075B2 (ja) * 2010-07-30 2016-11-09 住友電気工業株式会社 半導体装置およびその製造方法
CN103155124A (zh) * 2010-11-19 2013-06-12 松下电器产业株式会社 氮化物半导体装置
JP2013033930A (ja) * 2011-06-29 2013-02-14 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法
US8796738B2 (en) 2011-09-21 2014-08-05 International Rectifier Corporation Group III-V device structure having a selectively reduced impurity concentration
KR101262726B1 (ko) * 2011-12-30 2013-05-09 일진엘이디(주) 탄소 도핑된 ｐ형 질화물층을 포함하는 질화물계 발광소자 제조 방법
JP6002508B2 (ja) * 2012-09-03 2016-10-05 住友化学株式会社 窒化物半導体ウェハ
JP6055918B2 (ja) * 2013-07-19 2016-12-27 シャープ株式会社 電界効果トランジスタ
JP2015053328A (ja) * 2013-09-05 2015-03-19 富士通株式会社 半導体装置
JP6283250B2 (ja) * 2014-04-09 2018-02-21 サンケン電気株式会社 半導体基板及び半導体素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205146A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011082494A (ja) * 2009-09-14 2011-04-21 Covalent Materials Corp 化合物半導体基板

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Publication number Publication date
JP6249868B2 (ja) 2017-12-20
WO2015159481A1 (ja) 2015-10-22
JP2015207624A (ja) 2015-11-19
US20170033209A1 (en) 2017-02-02
TW201541635A (zh) 2015-11-01
KR20160141756A (ko) 2016-12-09
CN106233440A (zh) 2016-12-14
US9876101B2 (en) 2018-01-23
CN106233440B (zh) 2019-09-27
TWI596765B (zh) 2017-08-21

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