TWI596765B - Semiconductor substrate and semiconductor device - Google Patents

Semiconductor substrate and semiconductor device Download PDF

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Publication number
TWI596765B
TWI596765B TW104109013A TW104109013A TWI596765B TW I596765 B TWI596765 B TW I596765B TW 104109013 A TW104109013 A TW 104109013A TW 104109013 A TW104109013 A TW 104109013A TW I596765 B TWI596765 B TW I596765B
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TW
Taiwan
Prior art keywords
layer
region
semiconductor substrate
semiconductor
concentration
Prior art date
Application number
TW104109013A
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English (en)
Chinese (zh)
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TW201541635A (zh
Inventor
佐藤憲
鹿內洋志
後藤博一
篠宮勝
萩本和德
土屋慶太郎
Original Assignee
三墾電氣股份有限公司
信越半導體股份有限公司
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Publication of TW201541635A publication Critical patent/TW201541635A/zh
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Publication of TWI596765B publication Critical patent/TWI596765B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW104109013A 2014-04-18 2015-03-20 Semiconductor substrate and semiconductor device TWI596765B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014086397A JP6249868B2 (ja) 2014-04-18 2014-04-18 半導体基板及び半導体素子

Publications (2)

Publication Number Publication Date
TW201541635A TW201541635A (zh) 2015-11-01
TWI596765B true TWI596765B (zh) 2017-08-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109013A TWI596765B (zh) 2014-04-18 2015-03-20 Semiconductor substrate and semiconductor device

Country Status (6)

Country Link
US (1) US9876101B2 (https=)
JP (1) JP6249868B2 (https=)
KR (1) KR102121097B1 (https=)
CN (1) CN106233440B (https=)
TW (1) TWI596765B (https=)
WO (1) WO2015159481A1 (https=)

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JP6654957B2 (ja) * 2015-04-23 2020-02-26 ローム株式会社 窒化物半導体デバイス
CN107546260A (zh) * 2016-06-29 2018-01-05 江西省昌大光电科技有限公司 一种半绝缘GaN薄膜及其制备方法
JP6759886B2 (ja) * 2016-09-06 2020-09-23 富士通株式会社 半導体結晶基板、半導体装置、半導体結晶基板の製造方法及び半導体装置の製造方法
JP6615075B2 (ja) * 2016-09-15 2019-12-04 サンケン電気株式会社 半導体デバイス用基板、半導体デバイス、及び、半導体デバイス用基板の製造方法
EP3486939B1 (en) 2017-11-20 2020-04-01 IMEC vzw Method for forming a semiconductor structure for a gallium nitride channel device
CN113424326B (zh) * 2019-02-01 2024-06-14 苏州晶湛半导体有限公司 一种半导体结构及其制备方法
JP7393138B2 (ja) * 2019-06-24 2023-12-06 住友化学株式会社 Ｉｉｉ族窒化物積層体
JP7269190B2 (ja) * 2020-02-27 2023-05-08 株式会社東芝 窒化物結晶、光学装置、半導体装置、窒化物結晶の製造方法
CN111952365A (zh) * 2020-08-14 2020-11-17 中国科学院半导体研究所 碳掺杂调控的GaN基HEMT外延结构及其制作方法
WO2022068256A1 (zh) * 2020-09-30 2022-04-07 苏州能讯高能半导体有限公司 半导体器件的外延结构及其制备方法
JP7388422B2 (ja) * 2021-12-23 2023-11-29 信越半導体株式会社 窒化物半導体基板の製造方法
JPWO2023127520A1 (https=) * 2021-12-27 2023-07-06
WO2023176744A1 (ja) * 2022-03-14 2023-09-21 三菱ケミカル株式会社 ＧａＮエピタキシャル基板
CN119384879A (zh) * 2022-06-28 2025-01-28 三菱电机株式会社 半导体装置
KR102773898B1 (ko) * 2023-08-16 2025-02-27 웨이브로드 주식회사 반도체 소자 성장용 복합기판 및 그 제조 방법

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JP2011082494A (ja) * 2009-09-14 2011-04-21 Covalent Materials Corp 化合物半導体基板
JP2014049674A (ja) * 2012-09-03 2014-03-17 Hitachi Metals Ltd 窒化物半導体ウェハ

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JP4653671B2 (ja) * 2005-03-14 2011-03-16 株式会社東芝 発光装置
JP4792814B2 (ja) * 2005-05-26 2011-10-12 住友電気工業株式会社 高電子移動度トランジスタ、電界効果トランジスタ、エピタキシャル基板、エピタキシャル基板を作製する方法およびｉｉｉ族窒化物系トランジスタを作製する方法
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
JP5064824B2 (ja) 2006-02-20 2012-10-31 古河電気工業株式会社 半導体素子
JP4531071B2 (ja) 2007-02-20 2010-08-25 富士通株式会社 化合物半導体装置
JP4234180B2 (ja) * 2007-07-02 2009-03-04 三菱電機株式会社 窒化物系半導体積層構造の製造方法および半導体光素子の製造方法
JP4462330B2 (ja) * 2007-11-02 2010-05-12 住友電気工業株式会社 Ｉｉｉ族窒化物電子デバイス
JP2010123725A (ja) 2008-11-19 2010-06-03 Sanken Electric Co Ltd 化合物半導体基板及び該化合物半導体基板を用いた半導体装置
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JP2015053328A (ja) * 2013-09-05 2015-03-19 富士通株式会社 半導体装置
JP6283250B2 (ja) * 2014-04-09 2018-02-21 サンケン電気株式会社 半導体基板及び半導体素子

Patent Citations (2)

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JP2011082494A (ja) * 2009-09-14 2011-04-21 Covalent Materials Corp 化合物半導体基板
JP2014049674A (ja) * 2012-09-03 2014-03-17 Hitachi Metals Ltd 窒化物半導体ウェハ

Also Published As

Publication number Publication date
JP6249868B2 (ja) 2017-12-20
WO2015159481A1 (ja) 2015-10-22
JP2015207624A (ja) 2015-11-19
US20170033209A1 (en) 2017-02-02
TW201541635A (zh) 2015-11-01
KR102121097B1 (ko) 2020-06-09
KR20160141756A (ko) 2016-12-09
CN106233440A (zh) 2016-12-14
US9876101B2 (en) 2018-01-23
CN106233440B (zh) 2019-09-27

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