KR102075893B1 - 열전도 시트, 열전도 시트의 제조 방법, 방열 부재 및 반도체 장치 - Google Patents

열전도 시트, 열전도 시트의 제조 방법, 방열 부재 및 반도체 장치 Download PDF

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KR102075893B1
KR102075893B1 KR1020187009825A KR20187009825A KR102075893B1 KR 102075893 B1 KR102075893 B1 KR 102075893B1 KR 1020187009825 A KR1020187009825 A KR 1020187009825A KR 20187009825 A KR20187009825 A KR 20187009825A KR 102075893 B1 KR102075893 B1 KR 102075893B1
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heat
conductive sheet
sheet
heat conductive
carbon fiber
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KR20180050392A (ko
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히로키 가나야
유 노무라
슌스케 우치다
?스케 우치다
신이치 우치다
게이스케 아라마키
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데쿠세리아루즈 가부시키가이샤
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    • H01L2924/161—Cap
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    • H01L2924/166—Material
    • H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/16717—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
    • H01L2924/16724—Aluminium [Al] as principal constituent
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    • H01L2924/161—Cap
    • H01L2924/166—Material
    • H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/16738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11124625B2 (en) * 2017-05-12 2021-09-21 Dow Silicones Corporation Polymer composites of high dielectric constant and low dielectric dissipation
WO2019004150A1 (ja) * 2017-06-27 2019-01-03 積水ポリマテック株式会社 熱伝導性シート
KR102540533B1 (ko) * 2018-06-01 2023-06-07 현대자동차주식회사 열전도성이 우수한 경량 고분자 조성물과 그 제조방법 및 이 조성물을 이용하여 제조한 물품
JP2020116873A (ja) 2019-01-25 2020-08-06 デクセリアルズ株式会社 熱伝導性シートの製造方法
TWI896542B (zh) 2019-07-23 2025-09-11 德商漢高股份有限及兩合公司 高熱通量多元件總成之熱管理
CN110625877B (zh) * 2019-09-05 2021-06-08 上海阿莱德实业股份有限公司 一种导热界面材料的制备方法
CN114341273B (zh) * 2019-09-30 2024-05-03 积水保力马科技株式会社 导热性片和其制造方法
KR102280275B1 (ko) 2019-11-22 2021-07-21 더원씨엔티(주) 탄소복합 방열소재 및 그 제조방법
KR102384315B1 (ko) 2019-11-25 2022-04-07 재단법인 한국탄소산업진흥원 열가소성수지 기반 열전도성 마스터배치의 제조방법 및 그를 이용한 방열복합소재
JP7458775B2 (ja) * 2019-12-24 2024-04-01 デクセリアルズ株式会社 熱伝導性成形体の製造方法
EP3965150A4 (en) * 2020-05-15 2022-08-31 Dexerials Corporation THERMO-CONDUCTIVE SHEET AND METHOD OF MANUFACTURING IT
WO2021241249A1 (ja) * 2020-05-28 2021-12-02 デクセリアルズ株式会社 熱伝導シート及びその製造方法、並びに放熱構造体及び電子機器
JP2022064582A (ja) * 2020-10-14 2022-04-26 矢崎総業株式会社 熱伝導シート、電子機器及び車載装置
WO2022168729A1 (ja) * 2021-02-03 2022-08-11 デクセリアルズ株式会社 熱伝導性シート積層体及びこれを用いた電子機器
JP6983345B1 (ja) * 2021-02-18 2021-12-17 デクセリアルズ株式会社 熱伝導性シート、および電子機器
CN113150558B (zh) 2021-05-12 2021-11-26 广东思泉新材料股份有限公司 一种定向导热片及其制备方法、及半导体散热装置
US11615999B1 (en) 2022-07-22 2023-03-28 GuangDong Suqun New Material Co., Ltd Oriented heat conducting sheet and preparation method thereof, and semiconductor heat dissipating device
KR102842960B1 (ko) * 2023-09-11 2025-08-06 재단법인대구경북과학기술원 저자기장을 이용하여 배향이 가능한 열전도성 시트 및 이의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007326976A (ja) * 2006-06-08 2007-12-20 Polymatech Co Ltd 熱伝導性成形体及びその製造方法
JP2012001638A (ja) * 2010-06-17 2012-01-05 Sony Chemical & Information Device Corp 熱伝導性シート及び熱伝導性シートの製造方法
JP2012023335A (ja) 2010-06-17 2012-02-02 Sony Chemical & Information Device Corp 熱伝導性シート及びその製造方法
JP2015029075A (ja) * 2013-07-01 2015-02-12 デクセリアルズ株式会社 熱伝導シートの製造方法、熱伝導シート、及び放熱部材

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660324A (en) 1979-10-23 1981-05-25 Matsushita Electric Ind Co Ltd Infrared ray detector
JPS5671266A (en) 1979-11-15 1981-06-13 Jeol Ltd Scanning electron microscope
JP2992285B1 (ja) * 1998-11-10 1999-12-20 北川工業株式会社 熱伝導材
JP2001315244A (ja) 2000-05-01 2001-11-13 Jsr Corp 熱伝導性シート、その製造方法およびその熱伝導性シートを用いた放熱構造
JP2002003717A (ja) 2000-06-21 2002-01-09 Polymatech Co Ltd 熱伝導性シート
JP2002088249A (ja) 2000-09-12 2002-03-27 Polymatech Co Ltd 熱伝導性高分子組成物及び熱伝導性成形体
US6597575B1 (en) * 2002-01-04 2003-07-22 Intel Corporation Electronic packages having good reliability comprising low modulus thermal interface materials
JP2005054094A (ja) 2003-08-06 2005-03-03 Bridgestone Corp 熱伝導性樹脂材料
JP4791146B2 (ja) 2005-11-01 2011-10-12 ポリマテック株式会社 熱伝導性部材およびその製造方法
JP2008266586A (ja) * 2007-03-27 2008-11-06 Toyoda Gosei Co Ltd 低電気伝導性高放熱性高分子材料及び成形体
JP5146256B2 (ja) * 2008-03-18 2013-02-20 富士通株式会社 シート状構造体及びその製造方法、並びに電子機器及びその製造方法
US8465666B2 (en) * 2009-02-25 2013-06-18 Panasonic Corporation Thermoconductive composition, heat dissipating plate, heat dissipating substrate and circuit module using thermoconductive composition, and process for production of thermoconductive composition
TWI610407B (zh) 2010-06-17 2018-01-01 迪睿合股份有限公司 導熱片及其製造方法
JP5760397B2 (ja) * 2010-11-15 2015-08-12 日立化成株式会社 熱伝導シート、熱伝導シートの製造方法、及び放熱装置
JP5699556B2 (ja) * 2010-11-15 2015-04-15 日立化成株式会社 熱伝導シート、熱伝導シートの製造方法、及び放熱装置
JP5660324B2 (ja) 2011-06-20 2015-01-28 株式会社豊田中央研究所 樹脂組成物およびその製造方法
JP5779693B2 (ja) 2013-06-27 2015-09-16 デクセリアルズ株式会社 熱伝導性シート、及びその製造方法、並びに半導体装置
JP5752299B2 (ja) 2013-07-01 2015-07-22 デクセリアルズ株式会社 熱伝導シートの製造方法、熱伝導シート、及び放熱部材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007326976A (ja) * 2006-06-08 2007-12-20 Polymatech Co Ltd 熱伝導性成形体及びその製造方法
JP2012001638A (ja) * 2010-06-17 2012-01-05 Sony Chemical & Information Device Corp 熱伝導性シート及び熱伝導性シートの製造方法
JP2012023335A (ja) 2010-06-17 2012-02-02 Sony Chemical & Information Device Corp 熱伝導性シート及びその製造方法
JP2015029075A (ja) * 2013-07-01 2015-02-12 デクセリアルズ株式会社 熱伝導シートの製造方法、熱伝導シート、及び放熱部材

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