KR102021667B1 - 베이스 금속 또는 베이스 금속 합금의 전극들을 가지는 높은 전도성이 있는 낮은 저항 칩 레지스터를 제조하는 방법 - Google Patents
베이스 금속 또는 베이스 금속 합금의 전극들을 가지는 높은 전도성이 있는 낮은 저항 칩 레지스터를 제조하는 방법 Download PDFInfo
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- KR102021667B1 KR102021667B1 KR1020170149164A KR20170149164A KR102021667B1 KR 102021667 B1 KR102021667 B1 KR 102021667B1 KR 1020170149164 A KR1020170149164 A KR 1020170149164A KR 20170149164 A KR20170149164 A KR 20170149164A KR 102021667 B1 KR102021667 B1 KR 102021667B1
- Authority
- KR
- South Korea
- Prior art keywords
- base metal
- layer
- resistor
- coating layer
- substrate
- Prior art date
Links
- 239000010953 base metal Substances 0.000 title claims abstract description 122
- 229910001092 metal group alloy Inorganic materials 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000007639 printing Methods 0.000 claims abstract description 42
- 238000005245 sintering Methods 0.000 claims abstract description 41
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 93
- 239000011247 coating layer Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 43
- 229910052718 tin Inorganic materials 0.000 claims description 30
- 239000010949 copper Substances 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 238000009713 electroplating Methods 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 10
- 238000005096 rolling process Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000003698 laser cutting Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 12
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 150000002739 metals Chemical class 0.000 abstract description 6
- 239000011259 mixed solution Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 22
- 239000000956 alloy Substances 0.000 description 13
- 229910003336 CuNi Inorganic materials 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 108091008874 T cell receptors Proteins 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000009668 long-life test Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009258 tissue cross reactivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H01L45/1608—
-
- H01L45/1253—
-
- H01L45/14—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106111649 | 2017-04-07 | ||
| TW106111649A TWI602202B (zh) | 2017-04-07 | 2017-04-07 | Highly conductive base metal or alloy low ohmic chip resistor manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180113896A KR20180113896A (ko) | 2018-10-17 |
| KR102021667B1 true KR102021667B1 (ko) | 2019-09-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170149164A KR102021667B1 (ko) | 2017-04-07 | 2017-11-10 | 베이스 금속 또는 베이스 금속 합금의 전극들을 가지는 높은 전도성이 있는 낮은 저항 칩 레지스터를 제조하는 방법 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102021667B1 (zh) |
| TW (1) | TWI602202B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI751089B (zh) * | 2021-06-16 | 2021-12-21 | 國立成功大學 | 製作積層陶瓷電容器端電極與印刷全面積內電極保護層之方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017017117A (ja) | 2015-06-30 | 2017-01-19 | 國立成功大學Ｎａｔｉｏｎａｌ Ｃｈｅｎｇ Ｋｕｎｇ Ｕｎｉｖｅｒｓｉｔｙ | 車用硫化防止チップ抵抗器の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5309521B2 (ja) * | 2006-10-11 | 2013-10-09 | 三菱マテリアル株式会社 | 電極形成用組成物及びその製造方法並びに該組成物を用いた電極の形成方法 |
| KR20140006152A (ko) * | 2012-06-26 | 2014-01-16 | 삼성전자주식회사 | 전극 및 그 형성 방법과 상기 전극을 포함하는 전자 소자 |
| WO2014080789A1 (ja) * | 2012-11-20 | 2014-05-30 | 横浜ゴム株式会社 | 低温焼成用導電性組成物および太陽電池セル |
| TWI603347B (zh) * | 2015-04-08 | 2017-10-21 | Wafer resistance terminal electrode structure | |
| TWI555038B (zh) * | 2015-06-09 | 2016-10-21 | A negative temperature coefficient thermistor manufacturing method using a thick film material having a low resistivity and a high resistance temperature coefficient |
-
2017
- 2017-04-07 TW TW106111649A patent/TWI602202B/zh active
- 2017-11-10 KR KR1020170149164A patent/KR102021667B1/ko active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017017117A (ja) | 2015-06-30 | 2017-01-19 | 國立成功大學Ｎａｔｉｏｎａｌ Ｃｈｅｎｇ Ｋｕｎｇ Ｕｎｉｖｅｒｓｉｔｙ | 車用硫化防止チップ抵抗器の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180113896A (ko) | 2018-10-17 |
| TWI602202B (zh) | 2017-10-11 |
| TW201837927A (zh) | 2018-10-16 |
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