KR102003073B1 - 이미징 광학 시스템 - Google Patents

이미징 광학 시스템 Download PDF

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Publication number
KR102003073B1
KR102003073B1 KR1020137006685A KR20137006685A KR102003073B1 KR 102003073 B1 KR102003073 B1 KR 102003073B1 KR 1020137006685 A KR1020137006685 A KR 1020137006685A KR 20137006685 A KR20137006685 A KR 20137006685A KR 102003073 B1 KR102003073 B1 KR 102003073B1
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South Korea
Prior art keywords
optical system
imaging
imaging optical
reticle
mirror
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Expired - Fee Related
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KR1020137006685A
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English (en)
Korean (ko)
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KR20130141462A (ko
Inventor
한스-위르겐 만
Original Assignee
칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/08—Anamorphotic objectives
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020137006685A 2010-09-15 2011-09-13 이미징 광학 시스템 Expired - Fee Related KR102003073B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US38307910P 2010-09-15 2010-09-15
DE102010040811A DE102010040811A1 (de) 2010-09-15 2010-09-15 Abbildende Optik
US61/383,079 2010-09-15
DE102010040811.5 2010-09-15
PCT/EP2011/065823 WO2012034995A2 (en) 2010-09-15 2011-09-13 Imaging optical system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197019793A Division KR102154770B1 (ko) 2010-09-15 2011-09-13 이미징 광학 시스템

Publications (2)

Publication Number Publication Date
KR20130141462A KR20130141462A (ko) 2013-12-26
KR102003073B1 true KR102003073B1 (ko) 2019-10-04

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KR1020137006685A Expired - Fee Related KR102003073B1 (ko) 2010-09-15 2011-09-13 이미징 광학 시스템
KR1020197019793A Active KR102154770B1 (ko) 2010-09-15 2011-09-13 이미징 광학 시스템

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Country Status (7)

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US (4) US9366968B2 (enExample)
EP (2) EP4071535B1 (enExample)
JP (2) JP5938043B2 (enExample)
KR (2) KR102003073B1 (enExample)
CN (1) CN106873135B (enExample)
DE (1) DE102010040811A1 (enExample)
WO (1) WO2012034995A2 (enExample)

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DE102012208793A1 (de) 2012-05-25 2013-11-28 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik
DE102014208770A1 (de) * 2013-07-29 2015-01-29 Carl Zeiss Smt Gmbh Projektionsoptik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik
DE102014203188A1 (de) * 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Verfahren zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage
DE102014203189A1 (de) * 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Spiegel-Array
DE102014203187A1 (de) 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
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JP6562929B2 (ja) * 2014-02-24 2019-08-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィシステム
DE102014214257A1 (de) 2014-07-22 2016-01-28 Carl Zeiss Smt Gmbh Verfahren zum dreidimensionalen Vermessen eines 3D-Luftbildes einer Lithografiemaske
DE102014217229B4 (de) 2014-08-28 2023-02-23 Carl Zeiss Smt Gmbh Verfahren zum dreidimensionalen Vermessen eines 3D-Luftbildes einer Lithografiemaske sowie Metrologiesystem
CN106575088B (zh) 2014-07-22 2019-06-11 卡尔蔡司Smt有限责任公司 三维测量光刻掩模的3d空间像的方法
DE102014218474A1 (de) * 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
WO2016078818A1 (en) 2014-11-18 2016-05-26 Carl Zeiss Smt Gmbh Optical subsystem for projection lithography and illumination optical unit for projection lithography
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DE102015216443A1 (de) 2015-08-27 2017-03-02 Carl Zeiss Smt Gmbh Anordnung einer Vorrichtung zum Schutz eines in einer Objektebene anzuordnenden Retikels gegen Verschmutzung
DE102016225220A1 (de) 2016-02-09 2017-08-10 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie sowie optisches System mit einer derartigen Beleuchtungsoptik
US9865447B2 (en) * 2016-03-28 2018-01-09 Kla-Tencor Corporation High brightness laser-sustained plasma broadband source
DE102016205617A1 (de) 2016-04-05 2017-10-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
US11366455B2 (en) 2016-05-09 2022-06-21 Strong Force Iot Portfolio 2016, Llc Methods and systems for optimization of data collection and storage using 3rd party data from a data marketplace in an industrial internet of things environment
DE102016212477A1 (de) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
KR102672027B1 (ko) * 2016-12-20 2024-06-03 에베 그룹 에. 탈너 게엠베하 광-민감성 층을 노광하기 위한 디바이스 및 방법
KR101950726B1 (ko) 2016-12-21 2019-02-21 한남대학교 산학협력단 멀티스케일 이미징 시스템
DE102017200935A1 (de) 2017-01-20 2018-07-26 Carl Zeiss Smt Gmbh Abbildende Optik zur Führung von EUV-Abbildungslicht sowie Justageanordnung für eine derartige abbildende Optik
KR101957353B1 (ko) 2017-11-16 2019-03-12 한남대학교 산학협력단 미러의 회전이 가능한 멀티스케일 이미징 시스템
KR101957357B1 (ko) 2017-11-16 2019-03-12 한남대학교 산학협력단 단일 미러를 사용한 멀티스케일 이미징 시스템
DE102018200167A1 (de) 2018-01-08 2019-07-11 Carl Zeiss Smt Gmbh Pupillenfacettenspiegel, Beleuchtungsoptik und optisches System für eine Projektionsbelichtungsanlage
DE102018207277A1 (de) * 2018-05-09 2019-11-14 Carl Zeiss Smt Gmbh Lithografiemaske, optisches System zur Übertragung von Original Strukturabschnitten der Lithografiemaske sowie Projektionsoptik zur Abbildung eines Objektfeldes, in dem mindestens ein Original-Strukturabschnitt einer Lithografiemaske anordenbar ist
DE102018208373A1 (de) 2018-05-28 2019-06-19 Carl Zeiss Smt Gmbh Optisches Element zur Strahlführung von Abbildungslicht bei der Projektionslithographie
DE102018210315B4 (de) * 2018-06-25 2021-03-18 Carl Zeiss Smt Gmbh Verfahren zur Erfassung einer Struktur einer Lithografiemaske sowie Vorrichtung zur Durchführung des Verfahrens
DE102018214437A1 (de) 2018-08-27 2018-10-18 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
DE102019208961A1 (de) 2019-06-19 2020-12-24 Carl Zeiss Smt Gmbh Projektionsoptik und Projektionsbelichtungsanlage mit einer solchen Projektionsoptik
TWI764353B (zh) * 2020-11-03 2022-05-11 大陸商廣州立景創新科技有限公司 成像校正單元以及成像模組
DE102021202847A1 (de) * 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage für die Lithografie
DE102021205775A1 (de) 2021-06-08 2022-12-08 Carl Zeiss Smt Gmbh Abbildende Optik
DE102021205774A1 (de) 2021-06-08 2022-12-08 Carl Zeiss Smt Gmbh Abbildende Optik
DE102021213827B4 (de) 2021-12-06 2026-04-16 Carl Zeiss Smt Gmbh Verfahren zur Optimierung einer Pupillen-Blendenform zur Nachbildung von Beleuchtungs- und Abbildungseigenschaften eines optischen Produktionssystems bei der Beleuchtung und Abbildung eines Objekts mittels eines optischen Messsystems
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US20170146912A1 (en) 2017-05-25
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US20130128251A1 (en) 2013-05-23
US10007187B2 (en) 2018-06-26
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US20190025710A1 (en) 2019-01-24
US9568832B2 (en) 2017-02-14
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US20160259248A1 (en) 2016-09-08
KR102154770B1 (ko) 2020-09-11
CN106873135A (zh) 2017-06-20
JP2016148873A (ja) 2016-08-18
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US9366968B2 (en) 2016-06-14
CN106873135B (zh) 2020-04-14
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JP2013541729A (ja) 2013-11-14
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KR20190086034A (ko) 2019-07-19
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