JP5938043B2 - 結像光学系 - Google Patents
結像光学系 Download PDFInfo
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- JP5938043B2 JP5938043B2 JP2013528634A JP2013528634A JP5938043B2 JP 5938043 B2 JP5938043 B2 JP 5938043B2 JP 2013528634 A JP2013528634 A JP 2013528634A JP 2013528634 A JP2013528634 A JP 2013528634A JP 5938043 B2 JP5938043 B2 JP 5938043B2
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- 238000003384 imaging method Methods 0.000 title claims description 91
- 230000003287 optical effect Effects 0.000 claims description 103
- 210000001747 pupil Anatomy 0.000 claims description 47
- 238000005286 illumination Methods 0.000 claims description 26
- 230000005855 radiation Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 6
- 230000001419 dependent effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 231100000989 no adverse effect Toxicity 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/08—Anamorphotic objectives
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (12)
- 投影露光系(1)のための結像光学系(9)であって、
アナモフィック結像投影レンズ系(26,27)を有し、
前記アナモフィック結像投影レンズ系(26,27)は、2つの主要平面の方向に同符号結像スケールを有し、
前記アナモフィック結像投影レンズ系(26,27)は、少なくとも4つのミラーを含む、
ことを特徴とする結像光学系(9)。 - 前記アナモフィック結像投影レンズ系は、少なくとも1つがアナモフィック結像を行う少なくとも2つの部分レンズ系(26,27)を有することを特徴とする請求項1に記載の結像光学系(9)。
- 円形射出瞳を特徴とする請求項1又は請求項2に記載の結像光学系(9)。
- 前記アナモフィック結像投影レンズ系(26,27)は、自由曲面を有する少なくとも1つのミラー(M1からM8)を含むことを特徴とする請求項1から請求項3のいずれか1項に記載の結像光学系(9)。
- 第1の方向の第1の結像スケールと、該第1の結像スケールの少なくとも1.5倍大きい第2の方向の第2の結像スケールとを特徴とする請求項1から請求項4のいずれか1項に記載の結像光学系(9)。
- 方向依存の物体側開口数(NAO)を特徴とする請求項1から請求項5のいずれか1項に記載の結像光学系(9)。
- 少なくとも0.4の像側開口数と、
視野中心点に対する7°よりも小さい物体側主ビーム角度と、
走査方向に対して垂直な方向に13mmよりも大きい幅を有する像視野(10)と、
を特徴とする請求項1から請求項6のいずれか1項に記載の結像光学系(9)。 - 請求項1から請求項7のいずれか1項に記載の結像光学系(9)を有し、
放射線(14)を放射線源(3)から物体視野(5)に伝達するための照明光学系(4)を有する、
ことを特徴とする光学系。 - 請求項8に記載の光学系を有し、
放射線源(3)を有する、
ことを特徴とする投影露光系(1)。 - 走査方向に変位させることができる、レチクル(7)を保持するレチクルホルダ(8)を有し、
結像光学系(9)の走査方向の結像スケールが、それに垂直な方向のものよりも小さい、
ことを特徴とする請求項9に記載の投影露光系(1)。 - 請求項9又は請求項10に記載の投影露光系のためのレチクル(7)であって、
少なくとも104mmの幅と、
132mmよりも大きい長さと、
を有することを特徴とするレチクル(7)。 - 微細構造化構成要素を生成する方法であって、
レチクル(7)と感放射線層を有するウェーハ(12)とを準備する段階と、
請求項9又は請求項10に記載の投影露光系(1)を用いて前記レチクル(7)上の構造を前記ウェーハ(12)上の前記感放射線層上に投影する段階と、
前記ウェーハ(12)上の前記露光された層を現像する段階と、
を有することを特徴とする方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38307910P | 2010-09-15 | 2010-09-15 | |
US61/383,079 | 2010-09-15 | ||
DE102010040811A DE102010040811A1 (de) | 2010-09-15 | 2010-09-15 | Abbildende Optik |
DE102010040811.5 | 2010-09-15 | ||
PCT/EP2011/065823 WO2012034995A2 (en) | 2010-09-15 | 2011-09-13 | Imaging optical system |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016096931A Division JP2016148873A (ja) | 2010-09-15 | 2016-05-13 | 結像光学系 |
Publications (3)
Publication Number | Publication Date |
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JP2013541729A JP2013541729A (ja) | 2013-11-14 |
JP2013541729A5 JP2013541729A5 (ja) | 2014-11-06 |
JP5938043B2 true JP5938043B2 (ja) | 2016-06-22 |
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JP2013528634A Active JP5938043B2 (ja) | 2010-09-15 | 2011-09-13 | 結像光学系 |
JP2016096931A Pending JP2016148873A (ja) | 2010-09-15 | 2016-05-13 | 結像光学系 |
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JP2016096931A Pending JP2016148873A (ja) | 2010-09-15 | 2016-05-13 | 結像光学系 |
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US (4) | US9366968B2 (ja) |
EP (2) | EP2616865B1 (ja) |
JP (2) | JP5938043B2 (ja) |
KR (2) | KR102154770B1 (ja) |
CN (1) | CN106873135B (ja) |
DE (1) | DE102010040811A1 (ja) |
WO (1) | WO2012034995A2 (ja) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2011065374A1 (ja) | 2009-11-24 | 2013-04-18 | 株式会社ニコン | 結像光学系、露光装置、およびデバイス製造方法 |
DE102010040811A1 (de) | 2010-09-15 | 2012-03-15 | Carl Zeiss Smt Gmbh | Abbildende Optik |
DE102012208793A1 (de) | 2012-05-25 | 2013-11-28 | Carl Zeiss Smt Gmbh | Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik |
DE102014208770A1 (de) * | 2013-07-29 | 2015-01-29 | Carl Zeiss Smt Gmbh | Projektionsoptik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik |
DE102014203189A1 (de) * | 2014-02-21 | 2015-08-27 | Carl Zeiss Smt Gmbh | Spiegel-Array |
DE102014203188A1 (de) * | 2014-02-21 | 2015-08-27 | Carl Zeiss Smt Gmbh | Verfahren zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage |
DE102014203187A1 (de) | 2014-02-21 | 2015-08-27 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithografie |
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2011
- 2011-09-13 CN CN201611027506.7A patent/CN106873135B/zh active Active
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EP4071535A1 (en) | 2022-10-12 |
CN106873135A (zh) | 2017-06-20 |
JP2013541729A (ja) | 2013-11-14 |
KR20130141462A (ko) | 2013-12-26 |
US20190025710A1 (en) | 2019-01-24 |
EP2616865A2 (en) | 2013-07-24 |
US20160259248A1 (en) | 2016-09-08 |
US10007187B2 (en) | 2018-06-26 |
JP2016148873A (ja) | 2016-08-18 |
KR102003073B1 (ko) | 2019-10-04 |
CN106873135B (zh) | 2020-04-14 |
US20130128251A1 (en) | 2013-05-23 |
EP2616865B1 (en) | 2022-06-29 |
DE102010040811A1 (de) | 2012-03-15 |
WO2012034995A3 (en) | 2012-05-18 |
US9366968B2 (en) | 2016-06-14 |
KR102154770B1 (ko) | 2020-09-11 |
US9568832B2 (en) | 2017-02-14 |
EP4071535B1 (en) | 2024-08-21 |
CN103109225A (zh) | 2013-05-15 |
US20170146912A1 (en) | 2017-05-25 |
KR20190086034A (ko) | 2019-07-19 |
EP4071535C0 (en) | 2024-08-21 |
WO2012034995A2 (en) | 2012-03-22 |
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