KR101962419B1 - 중합체, 유기막 조성물, 및 패턴형성방법 - Google Patents

중합체, 유기막 조성물, 및 패턴형성방법 Download PDF

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Publication number
KR101962419B1
KR101962419B1 KR1020160007089A KR20160007089A KR101962419B1 KR 101962419 B1 KR101962419 B1 KR 101962419B1 KR 1020160007089 A KR1020160007089 A KR 1020160007089A KR 20160007089 A KR20160007089 A KR 20160007089A KR 101962419 B1 KR101962419 B1 KR 101962419B1
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South Korea
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group
substituted
unsubstituted
polymer
layer
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KR1020160007089A
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English (en)
Korean (ko)
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KR20170087294A (ko
Inventor
도미니아 라뜨웰
정현일
권효영
남궁란
남연희
문수현
송현지
허유미
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삼성에스디아이 주식회사
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Priority to KR1020160007089A priority Critical patent/KR101962419B1/ko
Priority to CN201680070703.9A priority patent/CN108291013B/zh
Priority to PCT/KR2016/011759 priority patent/WO2017126779A1/ko
Priority to TW105136173A priority patent/TWI667547B/zh
Publication of KR20170087294A publication Critical patent/KR20170087294A/ko
Application granted granted Critical
Publication of KR101962419B1 publication Critical patent/KR101962419B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G16/00—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/02—Condensation polymers of aldehydes or ketones with phenols only of ketones
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
KR1020160007089A 2016-01-20 2016-01-20 중합체, 유기막 조성물, 및 패턴형성방법 KR101962419B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020160007089A KR101962419B1 (ko) 2016-01-20 2016-01-20 중합체, 유기막 조성물, 및 패턴형성방법
CN201680070703.9A CN108291013B (zh) 2016-01-20 2016-10-19 聚合物、有机层组成物及图案形成方法
PCT/KR2016/011759 WO2017126779A1 (ko) 2016-01-20 2016-10-19 중합체, 유기막 조성물, 및 패턴형성방법
TW105136173A TWI667547B (zh) 2016-01-20 2016-11-08 聚合物、有機層組成物及圖案形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160007089A KR101962419B1 (ko) 2016-01-20 2016-01-20 중합체, 유기막 조성물, 및 패턴형성방법

Publications (2)

Publication Number Publication Date
KR20170087294A KR20170087294A (ko) 2017-07-28
KR101962419B1 true KR101962419B1 (ko) 2019-03-26

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KR1020160007089A KR101962419B1 (ko) 2016-01-20 2016-01-20 중합체, 유기막 조성물, 및 패턴형성방법

Country Status (4)

Country Link
KR (1) KR101962419B1 (zh)
CN (1) CN108291013B (zh)
TW (1) TWI667547B (zh)
WO (1) WO2017126779A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102246532B1 (ko) * 2020-10-28 2021-04-29 최상준 반사방지용 하드마스크 조성물

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KR102677284B1 (ko) * 2017-11-16 2024-06-24 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법, 패터닝된 기판의 제조 방법 그리고 화합물
KR102171074B1 (ko) * 2017-12-26 2020-10-28 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴 형성 방법
KR102244470B1 (ko) 2018-07-18 2021-04-23 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴 형성 방법
KR102278459B1 (ko) * 2018-08-21 2021-07-16 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴 형성 방법
KR102260811B1 (ko) * 2018-12-26 2021-06-03 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법
KR102393686B1 (ko) * 2019-05-21 2022-05-02 삼성에스디아이 주식회사 중합체, 하드마스크 조성물 및 패턴 형성 방법
KR102194297B1 (ko) * 2019-08-06 2020-12-22 최상준 인돌-플루오렌 중합체를 함유하는 반사방지용 하드마스크 조성물
KR102322627B1 (ko) * 2020-01-22 2021-11-08 (주)코이즈 유기 하드마스크용 공중합체 및 이를 포함하는 유기 하드마스크용 조성물

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US20150184018A1 (en) 2012-08-21 2015-07-02 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition that contains novolac resin having polynuclear phenol

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TWI414893B (zh) * 2006-03-14 2013-11-11 Jsr Corp 底層膜形成用組成物及圖型之形成方法
JP5979384B2 (ja) * 2011-08-12 2016-08-24 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
KR101821705B1 (ko) * 2011-09-06 2018-01-25 주식회사 동진쎄미켐 페놀계 자가가교 고분자 및 이를 포함하는 레지스트 하층막 조성물
EP2762513A4 (en) * 2011-09-30 2015-03-11 Mitsubishi Gas Chemical Co RESIN HAVING FLUORENE STRUCTURE AND SUB-LAYER FILMOGENIC MATERIAL FOR LITHOGRAPHY
KR101855506B1 (ko) * 2011-10-13 2018-05-08 주식회사 동진쎄미켐 방향족 고리 함유 고분자 및 이를 포함하는 레지스트 하층막 조성물
KR102066229B1 (ko) * 2013-03-26 2020-01-15 주식회사 동진쎄미켐 레지스트 하층막 조성물 및 이를 이용한 패턴 형성 방법
KR101655394B1 (ko) * 2013-04-25 2016-09-07 제일모직 주식회사 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR101752833B1 (ko) * 2014-05-16 2017-06-30 삼성에스디아이 주식회사 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
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KR101821734B1 (ko) * 2015-02-17 2018-01-24 삼성에스디아이 주식회사 중합체, 유기막 조성물, 유기막, 및 패턴형성방법

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Publication number Priority date Publication date Assignee Title
US20150184018A1 (en) 2012-08-21 2015-07-02 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition that contains novolac resin having polynuclear phenol

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102246532B1 (ko) * 2020-10-28 2021-04-29 최상준 반사방지용 하드마스크 조성물
WO2022092394A1 (ko) * 2020-10-28 2022-05-05 최상준 반사방지용 하드마스크 조성물
KR20220056780A (ko) * 2020-10-28 2022-05-06 주식회사 켐폴 반사방지용 하드마스크 조성물
KR102510790B1 (ko) 2020-10-28 2023-03-16 주식회사 켐폴 반사방지용 하드마스크 조성물

Also Published As

Publication number Publication date
KR20170087294A (ko) 2017-07-28
TWI667547B (zh) 2019-08-01
CN108291013A (zh) 2018-07-17
TW201727376A (zh) 2017-08-01
WO2017126779A1 (ko) 2017-07-27
CN108291013B (zh) 2020-10-16

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