KR101945211B1 - 에칭 방법, 이것에 이용되는 에칭액, 및 이것을 이용한 반도체 소자의 제조 방법 - Google Patents

에칭 방법, 이것에 이용되는 에칭액, 및 이것을 이용한 반도체 소자의 제조 방법 Download PDF

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KR101945211B1
KR101945211B1 KR1020120051919A KR20120051919A KR101945211B1 KR 101945211 B1 KR101945211 B1 KR 101945211B1 KR 1020120051919 A KR1020120051919 A KR 1020120051919A KR 20120051919 A KR20120051919 A KR 20120051919A KR 101945211 B1 KR101945211 B1 KR 101945211B1
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KR
South Korea
Prior art keywords
etching
metal material
compound
layer containing
material layer
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KR1020120051919A
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English (en)
Korean (ko)
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KR20120128575A (ko
Inventor
테츠야 카미무라
아츠시 미즈타니
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후지필름 가부시키가이샤
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Publication of KR20120128575A publication Critical patent/KR20120128575A/ko
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Publication of KR101945211B1 publication Critical patent/KR101945211B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
KR1020120051919A 2011-05-17 2012-05-16 에칭 방법, 이것에 이용되는 에칭액, 및 이것을 이용한 반도체 소자의 제조 방법 KR101945211B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011110856 2011-05-17
JPJP-P-2011-110856 2011-05-17
JP2012110968A JP5519728B2 (ja) 2011-05-17 2012-05-14 エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法
JPJP-P-2012-110968 2012-05-14

Publications (2)

Publication Number Publication Date
KR20120128575A KR20120128575A (ko) 2012-11-27
KR101945211B1 true KR101945211B1 (ko) 2019-02-07

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KR1020120051919A KR101945211B1 (ko) 2011-05-17 2012-05-16 에칭 방법, 이것에 이용되는 에칭액, 및 이것을 이용한 반도체 소자의 제조 방법

Country Status (3)

Country Link
JP (1) JP5519728B2 (zh)
KR (1) KR101945211B1 (zh)
TW (1) TWI540626B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014146623A (ja) * 2013-01-25 2014-08-14 Fujifilm Corp 半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法
TWI488943B (zh) * 2013-04-29 2015-06-21 Chi Mei Corp 蝕刻膏組成物及其應用
KR102290209B1 (ko) * 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
JP6121959B2 (ja) * 2014-09-11 2017-04-26 株式会社東芝 エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液
JP6737436B2 (ja) 2015-11-10 2020-08-12 株式会社Ｓｃｒｅｅｎホールディングス 膜処理ユニットおよび基板処理装置
CN106128942A (zh) * 2016-08-26 2016-11-16 株洲中车时代电气股份有限公司 一种消除碳化硅器件终端刻蚀中微掩膜的方法
JP7208814B2 (ja) * 2019-02-13 2023-01-19 株式会社Ｓｃｒｅｅｎホールディングス 生成装置、基板処理装置、及び基板処理方法
JP7453874B2 (ja) * 2020-07-30 2024-03-21 芝浦メカトロニクス株式会社 基板処理方法、および基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150236A (ja) * 2003-11-12 2005-06-09 Mitsubishi Gas Chem Co Inc 洗浄液およびそれを用いた洗浄方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4651269B2 (ja) * 2003-02-19 2011-03-16 三菱瓦斯化学株式会社 洗浄液およびそれを用いた洗浄法
CN1839355B (zh) * 2003-08-19 2012-07-11 安万托特性材料股份有限公司 用于微电子设备的剥离和清洁组合物
KR101444468B1 (ko) * 2005-10-05 2014-10-30 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제
JP5047881B2 (ja) * 2007-07-13 2012-10-10 東京応化工業株式会社 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
KR101486116B1 (ko) * 2008-10-09 2015-01-28 아반토르 퍼포먼스 머티리얼스, 인크. 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150236A (ja) * 2003-11-12 2005-06-09 Mitsubishi Gas Chem Co Inc 洗浄液およびそれを用いた洗浄方法

Also Published As

Publication number Publication date
JP2012256876A (ja) 2012-12-27
JP5519728B2 (ja) 2014-06-11
KR20120128575A (ko) 2012-11-27
TW201250818A (en) 2012-12-16
TWI540626B (zh) 2016-07-01

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