KR101905394B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101905394B1
KR101905394B1 KR1020110089970A KR20110089970A KR101905394B1 KR 101905394 B1 KR101905394 B1 KR 101905394B1 KR 1020110089970 A KR1020110089970 A KR 1020110089970A KR 20110089970 A KR20110089970 A KR 20110089970A KR 101905394 B1 KR101905394 B1 KR 101905394B1
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KR
South Korea
Prior art keywords
transistor
wiring
photosensor
oxide semiconductor
potential
Prior art date
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Expired - Fee Related
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KR1020110089970A
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English (en)
Korean (ko)
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KR20120025988A (ko
Inventor
요시유키 쿠로카와
타카유키 이케다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20120025988A publication Critical patent/KR20120025988A/ko
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Position Input By Displaying (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020110089970A 2010-09-08 2011-09-06 반도체 장치 Expired - Fee Related KR101905394B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010200897 2010-09-08
JPJP-P-2010-200897 2010-09-08
JPJP-P-2011-108192 2011-05-13
JP2011108192 2011-05-13

Publications (2)

Publication Number Publication Date
KR20120025988A KR20120025988A (ko) 2012-03-16
KR101905394B1 true KR101905394B1 (ko) 2018-10-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110089970A Expired - Fee Related KR101905394B1 (ko) 2010-09-08 2011-09-06 반도체 장치

Country Status (4)

Country Link
US (1) US8674972B2 (enExample)
JP (2) JP2012256819A (enExample)
KR (1) KR101905394B1 (enExample)
TW (1) TWI600174B (enExample)

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KR101895325B1 (ko) 2010-12-17 2018-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 재료 및 반도체 장치
JP5973165B2 (ja) * 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
TWI575494B (zh) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 半導體裝置的驅動方法
KR20140086954A (ko) * 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6059968B2 (ja) * 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
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US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (ko) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치
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KR102639256B1 (ko) 2012-12-28 2024-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
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JP2016006640A (ja) * 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 検知器、入力装置、入出力装置
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KR102500994B1 (ko) 2014-10-17 2023-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널
JP6570417B2 (ja) * 2014-10-24 2019-09-04 株式会社半導体エネルギー研究所 撮像装置および電子機器
US9933872B2 (en) 2014-12-01 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Touch panel
JP6443061B2 (ja) * 2015-01-15 2018-12-26 セイコーエプソン株式会社 光電変換装置、光電変換装置の製造方法、及び電子機器
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TWI738569B (zh) 2015-07-07 2021-09-01 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
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JP6665536B2 (ja) * 2016-01-12 2020-03-13 株式会社リコー 酸化物半導体
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JP7326518B2 (ja) * 2018-03-20 2023-08-15 株式会社ジャパンディスプレイ 光センサー装置
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