KR101904671B1 - 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법 - Google Patents

기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법 Download PDF

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KR101904671B1
KR101904671B1 KR1020170127182A KR20170127182A KR101904671B1 KR 101904671 B1 KR101904671 B1 KR 101904671B1 KR 1020170127182 A KR1020170127182 A KR 1020170127182A KR 20170127182 A KR20170127182 A KR 20170127182A KR 101904671 B1 KR101904671 B1 KR 101904671B1
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South Korea
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substrate
support
supporting
deposition
pair
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Korean (ko)
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게이스케 오타니
유키 아이자와
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캐논 톡키 가부시키가이샤
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Priority to KR1020170127182A priority Critical patent/KR101904671B1/ko
Priority to CN201810859502.8A priority patent/CN109576666B/zh
Priority to JP2018182213A priority patent/JP6700361B2/ja
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Publication of KR101904671B1 publication Critical patent/KR101904671B1/ko
Priority to JP2020080118A priority patent/JP7221238B2/ja
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    • H01L51/56—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H01L21/6734—
    • H01L21/683—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/17—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020170127182A 2017-09-29 2017-09-29 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법 Active KR101904671B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020170127182A KR101904671B1 (ko) 2017-09-29 2017-09-29 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법
CN201810859502.8A CN109576666B (zh) 2017-09-29 2018-07-31 基板支承构造体和包括其的真空蒸镀装置及蒸镀方法
JP2018182213A JP6700361B2 (ja) 2017-09-29 2018-09-27 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法
JP2020080118A JP7221238B2 (ja) 2017-09-29 2020-04-30 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170127182A KR101904671B1 (ko) 2017-09-29 2017-09-29 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법

Publications (1)

Publication Number Publication Date
KR101904671B1 true KR101904671B1 (ko) 2018-10-04

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KR1020170127182A Active KR101904671B1 (ko) 2017-09-29 2017-09-29 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법

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JP (2) JP6700361B2 (enExample)
KR (1) KR101904671B1 (enExample)
CN (1) CN109576666B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7749925B2 (ja) 2020-03-13 2025-10-07 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100554631B1 (ko) * 2002-07-15 2006-02-22 샤프 가부시키가이샤 기판용 카세트
KR100758567B1 (ko) * 2000-04-29 2007-09-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 웨이퍼 리액터의 처리량 증대 방법
JP2009071041A (ja) * 2007-09-13 2009-04-02 Canon Anelva Corp 真空処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4328496B2 (ja) * 2001-06-26 2009-09-09 株式会社日立プラントテクノロジー 枚葉基板の移載装置
JP2004042984A (ja) 2002-07-15 2004-02-12 Sharp Corp 超大型基板用カセット
JP2005340357A (ja) 2004-05-25 2005-12-08 Shinko Electric Co Ltd 基板収納容器、基板移載装置及び基板移載方法
TWM258968U (en) * 2004-07-22 2005-03-11 Au Optronics Corp Cassette
JP4553124B2 (ja) * 2004-12-16 2010-09-29 株式会社日立ハイテクノロジーズ 真空蒸着方法及びｅｌディスプレイ用パネル
KR100636482B1 (ko) * 2005-07-18 2006-10-18 삼성에스디아이 주식회사 유기 발광표시장치 제조용 홀더
US20070274809A1 (en) * 2006-05-26 2007-11-29 Hsien-Chang Kao Substrate cassette and transport system thereof
JP5169738B2 (ja) * 2008-10-29 2013-03-27 凸版印刷株式会社 基板用カセット
KR20110102678A (ko) * 2010-03-11 2011-09-19 엘지디스플레이 주식회사 기판 저장용 카세트
KR20120006748A (ko) * 2010-07-13 2012-01-19 삼성전기주식회사 박판 이송용 매거진
CN103124803B (zh) * 2010-09-27 2015-06-17 夏普株式会社 蒸镀方法、蒸镀装置和有机el显示装置
JP2013247302A (ja) * 2012-05-29 2013-12-09 Hitachi High-Technologies Corp 基板バッファ並びに有機ｅｌデバイス製造装置及び同製造方法
CN106148901B (zh) * 2015-05-15 2019-09-03 株式会社达文希斯 有机膜蒸镀装置、方法及有机膜装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100758567B1 (ko) * 2000-04-29 2007-09-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 웨이퍼 리액터의 처리량 증대 방법
KR100554631B1 (ko) * 2002-07-15 2006-02-22 샤프 가부시키가이샤 기판용 카세트
JP2009071041A (ja) * 2007-09-13 2009-04-02 Canon Anelva Corp 真空処理装置

Also Published As

Publication number Publication date
JP2020122221A (ja) 2020-08-13
JP6700361B2 (ja) 2020-05-27
CN109576666B (zh) 2021-07-06
JP2019065393A (ja) 2019-04-25
JP7221238B2 (ja) 2023-02-13
CN109576666A (zh) 2019-04-05

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