KR101900660B1 - 미세 레지스트 패턴 형성용 조성물 및 이를 사용한 패턴 형성 방법 - Google Patents

미세 레지스트 패턴 형성용 조성물 및 이를 사용한 패턴 형성 방법 Download PDF

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Publication number
KR101900660B1
KR101900660B1 KR1020157026718A KR20157026718A KR101900660B1 KR 101900660 B1 KR101900660 B1 KR 101900660B1 KR 1020157026718 A KR1020157026718 A KR 1020157026718A KR 20157026718 A KR20157026718 A KR 20157026718A KR 101900660 B1 KR101900660 B1 KR 101900660B1
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KR
South Korea
Prior art keywords
forming
pattern
composition
acid
polymer
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KR1020157026718A
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English (en)
Korean (ko)
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KR20150125694A (ko
Inventor
가즈마 야마모토
요시히로 미야모토
다카시 세키토
다쓰로 나가하라
Original Assignee
에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • C09D139/02—Homopolymers or copolymers of vinylamine
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • C09D139/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Chemical Kinetics & Catalysis (AREA)
KR1020157026718A 2013-02-26 2014-02-26 미세 레지스트 패턴 형성용 조성물 및 이를 사용한 패턴 형성 방법 KR101900660B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-036029 2013-02-26
JP2013036029A JP6239833B2 (ja) 2013-02-26 2013-02-26 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
PCT/JP2014/054657 WO2014132992A1 (ja) 2013-02-26 2014-02-26 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
KR20150125694A KR20150125694A (ko) 2015-11-09
KR101900660B1 true KR101900660B1 (ko) 2018-09-21

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KR1020157026718A KR101900660B1 (ko) 2013-02-26 2014-02-26 미세 레지스트 패턴 형성용 조성물 및 이를 사용한 패턴 형성 방법

Country Status (9)

Country Link
US (1) US9921481B2 (US20080242721A1-20081002-C00053.png)
EP (1) EP2963499A4 (US20080242721A1-20081002-C00053.png)
JP (1) JP6239833B2 (US20080242721A1-20081002-C00053.png)
KR (1) KR101900660B1 (US20080242721A1-20081002-C00053.png)
CN (1) CN104995564B (US20080242721A1-20081002-C00053.png)
IL (1) IL240745B (US20080242721A1-20081002-C00053.png)
SG (2) SG10201708724WA (US20080242721A1-20081002-C00053.png)
TW (1) TWI616480B (US20080242721A1-20081002-C00053.png)
WO (1) WO2014132992A1 (US20080242721A1-20081002-C00053.png)

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JP6157151B2 (ja) * 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
US9448483B2 (en) * 2014-07-31 2016-09-20 Dow Global Technologies Llc Pattern shrink methods
TW201627781A (zh) * 2014-10-14 2016-08-01 Ａｚ電子材料盧森堡有限公司 光阻圖案處理用組成物及使用其之圖案形成方法
KR102609535B1 (ko) * 2015-07-08 2023-12-04 주식회사 동진쎄미켐 포토레지스트 패턴 코팅용 조성물 및 이를 이용한 미세 패턴 형성 방법
JP6969889B2 (ja) 2016-05-13 2021-11-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7316022B2 (ja) 2016-05-13 2023-07-27 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
TWI738775B (zh) 2016-05-13 2021-09-11 日商住友化學股份有限公司 光阻組成物及製造光阻圖案之方法
TWI610392B (zh) * 2016-09-05 2018-01-01 Daxin Mat Corp 光電元件的製備方法
US11287740B2 (en) 2018-06-15 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of forming photoresist pattern
TW202016279A (zh) 2018-10-17 2020-05-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法
WO2020210660A1 (en) * 2019-04-12 2020-10-15 Inpria Corporation Organometallic photoresist developer compositions and processing methods
JP2023515693A (ja) 2020-03-02 2023-04-13 インプリア・コーポレイション 無機レジストパターニング用のプロセス環境

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JP2008310314A (ja) * 2007-05-15 2008-12-25 Fujifilm Corp パターン形成方法
JP2013020211A (ja) * 2011-07-14 2013-01-31 Az Electronic Materials Ip Ltd 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法

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JP5785121B2 (ja) * 2011-04-28 2015-09-24 信越化学工業株式会社 パターン形成方法
JP5830273B2 (ja) * 2011-06-10 2015-12-09 東京応化工業株式会社 レジストパターン形成方法
JP5846889B2 (ja) * 2011-12-14 2016-01-20 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物

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JP2001228616A (ja) 2000-02-16 2001-08-24 Mitsubishi Electric Corp 微細パターン形成材料及びこれを用いた半導体装置の製造方法
JP2008310314A (ja) * 2007-05-15 2008-12-25 Fujifilm Corp パターン形成方法
JP2013020211A (ja) * 2011-07-14 2013-01-31 Az Electronic Materials Ip Ltd 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法

Also Published As

Publication number Publication date
SG11201505632YA (en) 2015-08-28
IL240745A0 (en) 2015-10-29
SG10201708724WA (en) 2017-12-28
US9921481B2 (en) 2018-03-20
TW201439184A (zh) 2014-10-16
CN104995564B (zh) 2019-12-10
JP6239833B2 (ja) 2017-11-29
US20160002494A1 (en) 2016-01-07
JP2014164177A (ja) 2014-09-08
EP2963499A1 (en) 2016-01-06
KR20150125694A (ko) 2015-11-09
IL240745B (en) 2018-05-31
TWI616480B (zh) 2018-03-01
WO2014132992A1 (ja) 2014-09-04
CN104995564A (zh) 2015-10-21
EP2963499A4 (en) 2017-08-02

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