SG10201708724WA - Fine resist pattern-forming composition and pattern formation method using the same - Google Patents
Fine resist pattern-forming composition and pattern formation method using the sameInfo
- Publication number
- SG10201708724WA SG10201708724WA SG10201708724WA SG10201708724WA SG10201708724WA SG 10201708724W A SG10201708724W A SG 10201708724WA SG 10201708724W A SG10201708724W A SG 10201708724WA SG 10201708724W A SG10201708724W A SG 10201708724WA SG 10201708724W A SG10201708724W A SG 10201708724WA
- Authority
- SG
- Singapore
- Prior art keywords
- same
- formation method
- forming composition
- pattern
- fine resist
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
- C09D139/02—Homopolymers or copolymers of vinylamine
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
- C09D139/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013036029A JP6239833B2 (en) | 2013-02-26 | 2013-02-26 | Composition for forming fine resist pattern and pattern forming method using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201708724WA true SG10201708724WA (en) | 2017-12-28 |
Family
ID=51428254
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201708724WA SG10201708724WA (en) | 2013-02-26 | 2014-02-26 | Fine resist pattern-forming composition and pattern formation method using the same |
SG11201505632YA SG11201505632YA (en) | 2013-02-26 | 2014-02-26 | Fine resist pattern-forming composition and pattern forming method using same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201505632YA SG11201505632YA (en) | 2013-02-26 | 2014-02-26 | Fine resist pattern-forming composition and pattern forming method using same |
Country Status (9)
Country | Link |
---|---|
US (1) | US9921481B2 (en) |
EP (1) | EP2963499A4 (en) |
JP (1) | JP6239833B2 (en) |
KR (1) | KR101900660B1 (en) |
CN (1) | CN104995564B (en) |
IL (1) | IL240745B (en) |
SG (2) | SG10201708724WA (en) |
TW (1) | TWI616480B (en) |
WO (1) | WO2014132992A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6157151B2 (en) * | 2013-03-05 | 2017-07-05 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | Composition for forming fine resist pattern and pattern forming method using the same |
US9448483B2 (en) * | 2014-07-31 | 2016-09-20 | Dow Global Technologies Llc | Pattern shrink methods |
EP3208659A1 (en) * | 2014-10-14 | 2017-08-23 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Composition for resist patterning and method for forming pattern using same |
KR102609535B1 (en) * | 2015-07-08 | 2023-12-04 | 주식회사 동진쎄미켐 | Composition for coating photoresist pattern and method for forming fine pattern using the same |
TWI738775B (en) | 2016-05-13 | 2021-09-11 | 日商住友化學股份有限公司 | Photoresist composition and method for producing photoresist pattern |
JP6969889B2 (en) | 2016-05-13 | 2021-11-24 | 住友化学株式会社 | Method for manufacturing resist composition and resist pattern |
JP7316022B2 (en) | 2016-05-13 | 2023-07-27 | 住友化学株式会社 | RESIST COMPOSITION AND RESIST PATTERN MANUFACTURING METHOD |
TWI610392B (en) * | 2016-09-05 | 2018-01-01 | Daxin Mat Corp | Method for preparing photovoltaic element |
US11287740B2 (en) | 2018-06-15 | 2022-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist composition and method of forming photoresist pattern |
TW202016279A (en) | 2018-10-17 | 2020-05-01 | 美商英培雅股份有限公司 | Patterned organometallic photoresists and methods of patterning |
TW202344939A (en) * | 2019-04-12 | 2023-11-16 | 美商英培雅股份有限公司 | Method for treating a developed patterned layer |
WO2021178302A1 (en) | 2020-03-02 | 2021-09-10 | Inpria Corporation | Process environment for inorganic resist patterning |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3071401B2 (en) | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | Fine pattern forming material, method of manufacturing semiconductor device using the same, and semiconductor device |
JP2001228616A (en) * | 2000-02-16 | 2001-08-24 | Mitsubishi Electric Corp | Fine pattern forming material and method for producing semiconductor device using the same |
JP3662870B2 (en) | 2001-07-05 | 2005-06-22 | 東京応化工業株式会社 | Resin pattern refinement coating forming agent and fine resist pattern forming method using the same |
SG129274A1 (en) * | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
JP2005022282A (en) * | 2003-07-03 | 2005-01-27 | Fuji Photo Film Co Ltd | Silica preliminary dispersion liquid, silica pulverized dispersion liquid, coating liquid for ink receiving layer and inkjet recording medium |
KR100585138B1 (en) * | 2004-04-08 | 2006-05-30 | 삼성전자주식회사 | Mask pattern for manufacturing semiconductor device and method of forming the same and method of manufacturing semiconductor device having fine patterns |
JP4485241B2 (en) | 2004-04-09 | 2010-06-16 | Azエレクトロニックマテリアルズ株式会社 | Water-soluble resin composition and pattern forming method using the same |
KR100618850B1 (en) * | 2004-07-22 | 2006-09-01 | 삼성전자주식회사 | Mask pattern for manufacturing semiconductor device and method of forming the same and method of manufacturing semiconductor device having fine patterns |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP4566862B2 (en) * | 2005-08-25 | 2010-10-20 | 富士通株式会社 | Resist pattern thickening material, resist pattern forming method, semiconductor device and manufacturing method thereof |
JP4554665B2 (en) * | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD |
WO2008140119A1 (en) * | 2007-05-15 | 2008-11-20 | Fujifilm Corporation | Method for pattern formation |
JP5520590B2 (en) * | 2009-10-06 | 2014-06-11 | 富士フイルム株式会社 | Pattern forming method, chemically amplified resist composition, and resist film |
JP5553210B2 (en) * | 2010-04-01 | 2014-07-16 | ブラザー工業株式会社 | Treatment liquid for ink jet recording, ink set, and ink jet recording method |
US8852848B2 (en) * | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
JP5785121B2 (en) * | 2011-04-28 | 2015-09-24 | 信越化学工業株式会社 | Pattern formation method |
JP5830273B2 (en) | 2011-06-10 | 2015-12-09 | 東京応化工業株式会社 | Resist pattern forming method |
JP5705669B2 (en) * | 2011-07-14 | 2015-04-22 | メルクパフォーマンスマテリアルズIp合同会社 | Composition for forming a fine pattern and method for forming a fine pattern using the same |
JP5846889B2 (en) * | 2011-12-14 | 2016-01-20 | 東京応化工業株式会社 | Resist composition, resist pattern forming method, compound |
-
2013
- 2013-02-26 JP JP2013036029A patent/JP6239833B2/en active Active
-
2014
- 2014-02-25 TW TW103106175A patent/TWI616480B/en active
- 2014-02-26 CN CN201480008277.7A patent/CN104995564B/en active Active
- 2014-02-26 EP EP14756352.2A patent/EP2963499A4/en not_active Withdrawn
- 2014-02-26 KR KR1020157026718A patent/KR101900660B1/en active IP Right Grant
- 2014-02-26 SG SG10201708724WA patent/SG10201708724WA/en unknown
- 2014-02-26 US US14/768,660 patent/US9921481B2/en active Active
- 2014-02-26 WO PCT/JP2014/054657 patent/WO2014132992A1/en active Application Filing
- 2014-02-26 SG SG11201505632YA patent/SG11201505632YA/en unknown
-
2015
- 2015-08-20 IL IL240745A patent/IL240745B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP6239833B2 (en) | 2017-11-29 |
EP2963499A4 (en) | 2017-08-02 |
IL240745A0 (en) | 2015-10-29 |
EP2963499A1 (en) | 2016-01-06 |
TW201439184A (en) | 2014-10-16 |
IL240745B (en) | 2018-05-31 |
TWI616480B (en) | 2018-03-01 |
US20160002494A1 (en) | 2016-01-07 |
JP2014164177A (en) | 2014-09-08 |
CN104995564B (en) | 2019-12-10 |
SG11201505632YA (en) | 2015-08-28 |
KR20150125694A (en) | 2015-11-09 |
CN104995564A (en) | 2015-10-21 |
KR101900660B1 (en) | 2018-09-21 |
WO2014132992A1 (en) | 2014-09-04 |
US9921481B2 (en) | 2018-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201708724WA (en) | Fine resist pattern-forming composition and pattern formation method using the same | |
EP2980831A4 (en) | Underlayer-film-forming composition for imprinting, and pattern formation method | |
SG11201607443XA (en) | Resist composition and method for forming resist pattern | |
EP2955575A4 (en) | Resist composition, resist pattern formation method, and polyphenol derivative used in same | |
EP2899593A4 (en) | Composition for forming resist underlayer film and pattern forming method | |
IL240732B (en) | Composition for forming fine resist pattern and pattern formation method using same | |
EP3040777A4 (en) | Pattern forming method using resist underlayer film | |
EP2969740A4 (en) | Void structures with repeating elongated-aperture pattern | |
SG11201400460WA (en) | Composition for forming fine resist pattern and pattern forming method using same | |
SG11201508346UA (en) | Rinsing liquid for lithography and pattern forming method using same | |
SG11201501629VA (en) | Composition for forming fine resist pattern and pattern formation method using same | |
EP2955175A4 (en) | Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern formation method | |
EP2958112A4 (en) | Composition for forming conductive pattern, method for forming conductive pattern using same, and resin structure having conductive pattern | |
TWI561931B (en) | Chemically-amplified positive resist composition and resist patterning process using the same | |
TWI561918B (en) | Sulfonium salt, resist composition, and patterning process | |
TWI561913B (en) | Resist composition and method of forming resist pattern | |
TWI563536B (en) | Pattern forming method, method of manufacturing electronic device by using the same, and electronic device | |
HK1207193A1 (en) | Surface simulation | |
EP2958113A4 (en) | Composition for forming conductive pattern, method for forming conductive pattern using same, and resin structure having conductive pattern | |
EP2955577A4 (en) | Compound, material for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method | |
SG11201500151WA (en) | Pattern forming method, and, electronic device producing method and electronic device, each using the same | |
IL242211A (en) | Pattern forming method, method for manufacturing an electronic device and the electronic device | |
EP2991080A4 (en) | Composition for forming conductive pattern, method for forming conductive pattern by using same, and resin structure having conductive pattern | |
SG11201507705TA (en) | Pattern forming method | |
SG11201609176PA (en) | Resist material, resist composition and method for forming resist pattern |